NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2SA2005 Transistors High-voltage Switching (Audio output amplifier transistor, TV velocity modulation transistor) (-160V -160V, -1.5A) 2SA2005 !Features 1) Flat DC current gain characteristics. 2) High breakdown voltage. (BVCEO = -160V -160V) 3) High fT. (Typ. 150MHz) 4) Wide SOA (safe operating area). 5) Complements the 2SC5511 2SC5511. !External dimensions (Units : mm) 4.5 10.0 1.2 1.3 0.8 2.54 , Storage temperature Tstg -55~+150 °C !Packaging specifications and hFE Type 2SA2005 ... | Original |
1 pages, |
2SC5511 2SA2005 160V -160V 2SA2005 abstract |
| Abstract: Transistors 2SA2005 High-voltage Switching (Audio output amplifier transistor, TV velocity modulation transistor) (_160V, -1.5A) 2SA2005 ! Features 1 ) Flat DC current gain characteristics. 2) High breakdown voltage. (BVceo = -160V -160V) 3) High fr. (Typ. 150MHz) 4) Wide SOA (safe operating area). 5) Complements the 2SC5511 2SC5511. ! Absolute maximum ratings (Ta = 25°C) ! External dimensions (Units , Iife Type 2SA2005 Package TO-220FN hFE DE Code Basic ordering unit 500 ! Electrical ... | OCR Scan |
1 pages, |
TO-220FN 2SC5511 Audio Output Transistor Amplifier 2sa2005 2SA2005 -160V 2SA2005 abstract |
| Abstract: 2SA2005 Transistors For Audio Amplifier output - TV Velosity Modulation (-160V -160V, -1.5A) 2SA2005 Structure PNP Silicon Epitaxial Planar Transistor External dimensions (Unit : mm) TO-220FN 4.5 3.2 2.8 8.0 1.2 1.3 14.0 5.0 15.0 Features 1) Electrical characteristics of DC current gain hFE is flat. 2) High breakdown voltage. (BVCEO= -160V -160V(Min.), at IC= -1mA) 3 , Packaging specifications and hFE Symbol Parameter NPN 2SA2005 Limits VCBO -160 ... | Original |
2 pages, |
velosity transistor 160v 1.5a pnp 2SC5511 2sa2005 2SA2005 -160V 2SA2005 abstract |
| Abstract: 2SA2005 Transistors For Audio Amplifier output - TV Velosity Modulation ( 160V, 1.5A) 2SA2005 Structure PNP Silicon Epitaxial Planar Transistor External dimensions (Unit : mm) �������� ��� ���� ��� Features 1) Electrical characteristics of DC current gain hFE is flat. 2) High breakdown voltage. (BVCEO= 160V(Min.), at IC= 1mA) 3) High fT. (Typ. 150MHz, at VCE= 10V, IE=0.2A, f=100MHz) 4) Wide SOA. ��� ��� ��� ��� ���-� ���� ���ݱ������� ���� ���� ��� ��� ��� ... | Original |
2 pages, |
2SA2005 2SA2005 abstract |
| Abstract: Transistors 2SC5511 2SC5511 High-voltage Switching (Audio output amplifier transistor, TV velocity modulation transistor) (160V, 1.5A) 2SC5511 2SC5511 ! Features 1 ) Flat DC current gain characteristics. 2) High breakdown voltage. (BVceo = 160V) 3) High fr. (Typ. 150MHz) 4) Wide SOA (safe operating area). 5) Complements the 2SA2005. ! Absolute maximum ratings (Ta = 25°C) ! External dimensions (Units : mm) Parameter Symbol Limits Unit Collector-base voltage VcBO 160 V Collector-emitter voltage VcEO 160 V ... | OCR Scan |
1 pages, |
2SC5511 2SA2005 Audio Output Transistor Amplifier 160V 2SC5511 abstract |
| Abstract: 2SC5511 2SC5511 Transistors High-voltage Switching (Audio output amplifier transistor, TV velocity modulation transistor) (160V, 1.5A) 2SC5511 2SC5511 !Features 1) Flat DC current gain characteristics. 2) High breakdown voltage. (BVCEO = 160V) 3) High fT. (Typ. 150MHz) 4) Wide SOA (safe operating area). 5) Complements the 2SA2005. !External dimensions (Units : mm) 10.0 4.5 1.2 1.3 0.8 2.54 !Absolute maximum ratings (Ta = 25°C) 2.54 (1) (2) (3) (1) (2) (3) Parameter Symbol Limits ... | Original |
1 pages, |
2SC5511 2SA2005 2SC5511 abstract |
| Abstract: modulation Complements PNP Absolute maximum ratings (Ta=25°C) NPN 2SA2005 2SC5511 2SC5511 ... | Original |
2 pages, |
transistor 160v 1.5a pnp transistor 160v 1.5a npn 2SC5511 2SA2005 2SC5511 abstract |
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