NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SA2004 | Panasonic | Silicon PNP Epitaxial Planar Type Power Transistor |
3 pages, |
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| 2SA2004 | Panasonic | Silicon PNP epitaxial planer type |
1 pages, |
Original | |
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| 2SA2004 | Panasonic | PNP Transistor |
2 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Power Transistors 2SA2004 Silicon PNP epitaxial planer type Unit: mm For power amplification 4.6�2 9.9�3 3.0�5 2.9�2 I Absolute Maximum Ratings TC = 25癈 Symbol Rating Unit VCBO -60 VCEO -60 V Emitter to base voltage VEBO -5 ICP -16 A Collector current IC -8 0.55�15 A 20 2.6�1 0.8�1 V Peak collector current 1.4�2 1.6�2 V Collector to emitter voltage 13.7�2 4.2�2 Solder Dip � High forward current ... | Original |
1 pages, |
2SA2004 2SA2004 abstract |
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| Abstract: This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). Power Transistors 2SA2004 Silicon PNP epitaxial planar type Unit: mm For power amplification 4.6�2 9.9�3 M Di ain sc te on na tin nc ue e/ d 3.0�5 2.9�2 Absolute Maximum Ratings Ta = 25癈 Symbol Peak collector current TC = 25癈 Collector power dissipation V -60 V VEBO -5 V -8 A , SJD00009CED SJD00009CED 1 This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). 2SA2004 Rth t Safe ... | Original |
3 pages, |
2SA2004 2002/95/EC 2002/95/EC abstract |
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| Abstract: Power Transistors 2SA2004 Silicon PNP epitaxial planar type Unit: mm For power amplification 4.6�2 9.9�3 3.0�5 2.9�2 3.2�1 15.0�5 Features 13.7�2 4.2�2 Absolute Maximum Ratings Ta = 25癈 Parameter Symbol Rating VCBO -60 V Collector-emitter voltage (Base open) VCEO -60 V Emitter-base voltage (Collector open) VEBO -5 V IC -8 , 1 2SA2004 Rth t Safe operation area Non repetitive pulse TC = 25癈 -10 IC t=1 s t = ... | Original |
3 pages, |
2SA2004 2SA2004 abstract |
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| Abstract: Power Transistors 2SA2004 Silicon PNP epitaxial planar type Unit: mm For power amplification 4.6�2 9.9�3 3.0�5 2.9�2 I Absolute Maximum Ratings TC = 25癈 Symbol Rating Unit Collector to base voltage VCBO -60 VCEO -60 V Emitter to base voltage VEBO -5 ICP -16 A IC -8 20 Tj 150 Tstg -55 to +150 1 2 3 1: Base 2: Collector 3: Emitter TO-220D Package 癈 Storage temperature 2.54�30 5.08�50 W Junction ... | Original |
2 pages, |
2SA2004 2SA2004 abstract |
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| Abstract: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is i ... | Original |
124 pages, |
PANASONIC TRANSISTOR 2SC6073 datasheet abstract |
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| Abstract: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intende ... | Original |
140 pages, |
2PG003 smd code ml6 2pg001 2SD2363 2PG009 datasheet abstract |
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| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| BD244A | BD244A Buy | 2SA2004 Buy | Matsushita, Panasonic | Direct | PowerBJT | PNP Epitaxial Silicon Transistor |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| Part | Similar Part | Notes |