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2SA2004 Datasheet

Part Manufacturer Description PDF Type Ordering
2SA2004 Panasonic Silicon PNP epitaxial planer type
ri

1 pages,
32.37 Kb

Original Buy
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2SA2004 Panasonic PNP Transistor
ri

2 pages,
42.12 Kb

Original Buy
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2SA2004 Panasonic Silicon PNP Epitaxial Planar Type Power Transistor
ri

3 pages,
57.52 Kb

Original Buy
datasheet frame

2SA2004

Catalog Datasheet Results Type PDF Document Tags
Abstract: Power Transistors 2SA2004 Silicon PNP epitaxial planer type Unit: mm For power amplification 4.6�2 9.9�3 3.0�5 2.9�2 I Absolute Maximum Ratings TC = 25癈 Symbol Rating Unit VCBO -60 VCEO -60 V Emitter to base voltage VEBO -5 ICP -16 A Collector current IC -8 0.55�15 A 20 2.6�1 0.8�1 V Peak collector current 1.4�2 1.6�2 V Collector to emitter voltage 13.7�2 4.2�2 Solder Dip � High forward current ... Original
datasheet

1 pages,
32.37 Kb

2SA2004 2SA200 2SA2004 abstract
datasheet frame
Abstract: This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). Power Transistors 2SA2004 Silicon PNP epitaxial planar type Unit: mm For power amplification 4.6�2 9.9�3 M Di ain sc te on na tin nc ue e/ d 3.0�5 2.9�2 Absolute Maximum Ratings Ta = 25癈 Symbol Peak collector current TC = 25癈 Collector power dissipation V -60 V VEBO -5 V -8 A , SJD00009CED SJD00009CED 1 This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). 2SA2004 Rth t Safe ... Original
datasheet

3 pages,
214.71 Kb

2SA2004 2002/95/EC 2002/95/EC abstract
datasheet frame
Abstract: Power Transistors 2SA2004 Silicon PNP epitaxial planar type Unit: mm For power amplification Features · High forward current transfer ratio hFE · Satisfactory linearity of forward current transfer ratio hFE · Dielectric breakdown voltage of the package: > 5 kV · High-speed switching 9.9±0.3 4.6±0.2 2.9±0.2 M Di ain sc te on na tin nc ue e/ d 13.7±0.2 4.2±0.2 1.4±0.2 1.6±0.2 15.0±0.5 , -400 mA, IB2 = 400 mA VCC = -50 V Publication date: January 2003 SJD00009CED SJD00009CED 1 2SA2004 ... Original
datasheet

3 pages,
177.13 Kb

2SA2004 2SA2004 abstract
datasheet frame
Abstract: Power Transistors 2SA2004 Silicon PNP epitaxial planar type Unit: mm For power amplification Features · High forward current transfer ratio hFE · Satisfactory linearity of forward current transfer ratio hFE · Dielectric breakdown voltage of the package: > 5 kV · High-speed switching 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 3.2±0.1 1.4±0.2 1.6±0.2 , µA µA V Publication date: August 2002 SJD00009BED SJD00009BED 1 2SA2004 Area of safe operation (ASO ... Original
datasheet

3 pages,
61.08 Kb

2SA2004 2SA2004 abstract
datasheet frame
Abstract: Power Transistors 2SA2004 Silicon PNP epitaxial planar type Unit: mm For power amplification 4.6�2 9.9�3 3.0�5 2.9�2 3.2�1 15.0�5 Features 13.7�2 4.2�2 Absolute Maximum Ratings Ta = 25癈 Parameter Symbol Rating VCBO -60 V Collector-emitter voltage (Base open) VCEO -60 V Emitter-base voltage (Collector open) VEBO -5 V IC -8 , 1 2SA2004 Rth t Safe operation area Non repetitive pulse TC = 25癈 -10 IC t=1 s t = ... Original
datasheet

3 pages,
57.52 Kb

2SA2004 2SA2004 abstract
datasheet frame
Abstract: Power Transistors 2SA2004 Silicon PNP epitaxial planar type Unit: mm For power amplification 4.6�2 9.9�3 3.0�5 2.9�2 I Absolute Maximum Ratings TC = 25癈 Symbol Rating Unit Collector to base voltage VCBO -60 VCEO -60 V Emitter to base voltage VEBO -5 ICP -16 A IC -8 20 Tj 150 Tstg -55 to +150 1 2 3 1: Base 2: Collector 3: Emitter TO-220D Package 癈 Storage temperature 2.54�30 5.08�50 W Junction ... Original
datasheet

2 pages,
42.12 Kb

2SA2004 2SA2004 abstract
datasheet frame
Abstract: A 2SA1868 2SA1868 2SA1890 2SA1890 2SA1949 2SA1949 2SA1950 2SA1950 2SA1961 2SA1961 2SA1982 2SA1982 2SA2004 2SA2009 2SA2009 2SA2010 2SA2010 T092L T092L T092L T092L T0202 T0202 T092 ... OCR Scan
datasheet

2 pages,
141.57 Kb

T092L SS-Mini 3 2SA1495 A1534 datasheet abstract
datasheet frame
Abstract: a699a 3SK271 k2411 2SA1961 2SA1961 2SA1982 2SA1982 2SA2004 2SA2009 2SA2009 2SA2010 2SA2010 T092L T092L T092L T092L T0202 T0202 T092 T092 T0220 T0220 T092L T092L T0126 T0126 T092 T092L T092L T0126 T0126 ... OCR Scan
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2 pages,
233.19 Kb

c 5019 2Sa1950 2SA1495 IX 3354 K 2411 3SK241 3SK241 abstract
datasheet frame
Abstract: A 2SA1868 2SA1868 2SA1890 2SA1890 2SA1949 2SA1949 2SA1950 2SA1950 2SA1961 2SA1961 2SA1982 2SA1982 2SA2004 2SA2009 2SA2009 2SA2010 2SA2010 T092L T092L T092L T092L T0202 T0202 T092 ... OCR Scan
datasheet

2 pages,
138.06 Kb

2SC4714 2SC2258 2SC3063 2SC5340 2SC2258 abstract
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Abstract: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is i ... Original
datasheet

124 pages,
2460.59 Kb

2PG011 PANASONIC TRANSISTOR 2SC6073 datasheet abstract
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Fairchild Cross Reference Results

Fairchild Part Orderable Industry Part Manufacturer Type Family Description
BD244A BD244A Buy 2SA2004 Buy Matsushita, Panasonic Direct PowerBJT PNP Epitaxial Silicon Transistor

On Semiconductor Cross Reference Results

On Semiconductor Part Industry Part Manufacturer Type
2N6107G Buy 2SA2004 Buy Panasonic Close
2N6109G Buy 2SA2004 Buy Panasonic Close

Misc. Cross Reference Results

Part Similar Part Notes
2SA2004 Buy 2SA1442 Buy
2SA2004 Buy 2SA1470 Buy
2SA2004 Buy 2SA1742 Buy