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2SA2004 Datasheet

Part Manufacturer Description PDF Type
2SA2004 Panasonic Silicon PNP epitaxial planer type Original
2SA2004 Panasonic PNP Transistor Original
2SA2004 Panasonic Silicon PNP Epitaxial Planar Type Power Transistor Original

2SA2004

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Power Transistors 2SA2004 Silicon PNP epitaxial planar type Unit: mm For power amplification 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 3.2±0.1 15.0±0.5 Features 13.7±0.2 4.2±0.2 Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating VCBO -60 V Collector-emitter voltage (Base open) VCEO -60 V Emitter-base voltage (Collector open) VEBO -5 , : January 2003 SJD00009CED 1 2SA2004 Rth t Safe operation area Non repetitive pulse TC = 25 Panasonic
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Abstract: Power Transistors 2SA2004 Silicon PNP epitaxial planar type Unit: mm For power amplification Features · High forward current transfer ratio hFE · Satisfactory linearity of forward current transfer ratio hFE · Dielectric breakdown voltage of the package: > 5 kV · High-speed switching 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 3.2±0.1 1.4±0.2 1.6±0.2 , uA uA V Publication date: August 2002 SJD00009BED 1 2SA2004 Area of safe operation (ASO Panasonic
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A2004
Abstract: Power Transistors 2SA2004 Silicon PNP epitaxial planar type Unit: mm For power amplification Features · High forward current transfer ratio hFE · Satisfactory linearity of forward current transfer ratio hFE · Dielectric breakdown voltage of the package: > 5 kV · High-speed switching 9.9±0.3 4.6±0.2 2.9±0.2 M Di ain sc te on na tin nc ue e/ d 13.7±0.2 4.2±0.2 1.4±0.2 1.6±0.2 15.0±0.5 , -400 mA, IB2 = 400 mA VCC = -50 V Publication date: January 2003 SJD00009CED 1 2SA2004 Panasonic
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Abstract: Power Transistors 2SA2004 Silicon PNP epitaxial planer type Unit: mm For power amplification 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 I Absolute Maximum Ratings TC = 25°C Symbol Rating Unit VCBO -60 VCEO -60 V Emitter to base voltage VEBO -5 ICP -16 A Collector current IC -8 0.55±0.15 A 20 2.6±0.1 0.8±0.1 V Peak collector current 1.4±0.2 1.6±0.2 V Collector to emitter voltage 13.7±0.2 4.2±0.2 Solder Dip Panasonic
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2SA200
Abstract: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SA2004 Silicon PNP epitaxial planar type Unit: mm For power amplification 4.6±0.2 9.9±0.3 M Di ain sc te on na tin nc ue e/ d 3.0±0.5 2.9±0.2 Absolute Maximum Ratings Ta = 25°C Symbol Peak collector current TC = 25°C Collector power dissipation V -60 V VEBO -5 V , 2003 SJD00009CED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SA2004 Panasonic
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Abstract: A 2SA1868 2SA1890 2SA1949 2SA1950 2SA1961 2SA1982 2SA2004 2SA2009 2SA2010 T092L T092L T0202 T092 -
OCR Scan
2SB642 2SB946 A1534 T092 2SB0774 A1534A T0-92 T092NL T092-2P T0126 T0-202 T0220
Abstract: Power Transistors 2SA2004 Silicon PNP epitaxial planar type Unit: mm For power amplification 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 I Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector to base voltage VCBO -60 VCEO -60 V Emitter to base voltage VEBO -5 ICP -16 A IC -8 20 Tj 150 Tstg -55 to +150 1 2 3 1: Base 2: Collector 3: Emitter TO-220D Package °C Storage temperature 2.54±0.30 5.08±0.50 Panasonic
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Abstract: A 2SA1868 2SA1890 2SA1949 2SA1950 2SA1961 2SA1982 2SA2004 2SA2009 2SA2010 T092L T092L T0202 T092 -
OCR Scan
2SC4714 2SB160 2sc5340 2SC2258 2SC3063 2SC5340 T0-220 2SC2923
Abstract: 2SA1961 2SA1982 2SA2004 2SA2009 2SA2010 T092L T092L T0202 T092 T092 T0220 T092L T0126 T092 T092L T0126 -
OCR Scan
K 2411 k2411 IX 3354 a699a 3SK2411 c 5019 3SK241 2SB643 2SB644 2SB709A 2SB710/A 2SB726