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2SA1978-T1B-A California Eastern Laboratories (CEL) RF TRANSISTOR PNP SOT-23 visit Digikey Buy
2SA1978-A California Eastern Laboratories (CEL) RF TRANSISTOR PNP SOT-23 visit Digikey Buy

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Part : 2SA1978-T1B-A-FB Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 2,650 Best Price : $4.17 Price Each : $4.17
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2SA1978 Datasheet

Part Manufacturer Description PDF Type
2SA1978 Kexin PNP Eitaxial Silicon Transistor Original
2SA1978 NEC PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER Original
2SA1978 TY Semiconductor PNP Eitaxial Silicon Transistor - SOT-23 Original
2SA1978 N/A Japanese Transistor Cross References (2S) Scan
2SA1978FB NEC PNP Epitaxial Silicon Transistor Microwave Amplifier Original
2SA1978-T1B NEC fT=4GHz PNP Bip Tr Original

2SA1978

Catalog Datasheet MFG & Type PDF Document Tags

2SA1424

Abstract: NEC 2532 DATA DATA PRELIMINARY SHEET SHEET Silicon Transistor 2SA1978 PNP EPITAXIAL SILICON , ) Date Published April 1996 P Printed in Japan © 1996 2SA1978 SWITCHING CHARACTERISTICS , 2SA1978 TYPICAL CHARACTERISTICS TOTAL POWER DISSIPATION VS. AMBIENT TEMPERATURE NOISE FIGURE VS , 1 10 100 IC - Collector Current - mA 3 2SA1978 FEED-BACK CAPACITANCE vs. COLLECTOR , ­1000 2SA1978 S-PARAMETER S11 3 GHZ 3 GHZ VCE = ­10 V, IC = ­15 mA f = 100 MHZ f =
NEC
Original
2SC2351 2SA1424 NEC 2532 2sc2351 equivalent NPN transistor mhz s-parameter 276-137

2SA1424

Abstract: 2SC2351 . DATA DATA PRELIMINARY SHEET SHEET Silicon Transistor 2SA1978 PNP EPITAXIAL SILICON TRANSISTOR , ) Date Published April 1996 P Printed in Japan © 1996 2SA1978 SWITCHING CHARACTERISTICS , 2SA1978 TYPICAL CHARACTERISTICS TOTAL POWER DISSIPATION VS. AMBIENT TEMPERATURE NOISE FIGURE VS , 1 10 100 IC - Collector Current - mA 3 2SA1978 FEED-BACK CAPACITANCE vs. COLLECTOR , ­1000 2SA1978 S-PARAMETER S11 3 GHZ 3 GHZ VCE = ­10 V, IC = ­15 mA f = 100 MHZ f =
Renesas Electronics
Original
NPN/transistor NEC K 2500

2SA1424

Abstract: NPN2SC2351 Silicon Transistor 2SA1978 PNP mm fT 2.8±0.2 0.1 0.4 -0.05 f = 5. 5 GHz TYP , P11028JJ1V0DS00 December 1995 P © NEC Corporation 1995 2SA1978 Vin = 1 V TYP , 160 2 1k 200 250 2.7 k 27 26.3 tr toffdelaytf 2SA1978 TOTAL POWER , ICmA 100 0 1 10 100 ICmA 3 2SA1978 FEED-BACK CAPACITANCE vs. COLLECTOR TO , ICmA -1000 2SA1978 S S11 3 GHz 3 GHz VCK = -10 V, IC = -15 mA f = 100 MHz f =
NEC
Original
NPN2SC2351 287-1 MAG 24NEC 17NEC 108-0171NEC 46017NEC 54024NEC

transistor marking T93

Abstract: PNP 5GHz Transistors IC SMD Type PNP Eitaxial Silicon Transistor 2SA1978 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 High fT (fT=5.5GHz TYP). 0.4 3 Features 1 0.55 High gain |S21e|2=10.0dB TYP.@f=1.0GHz,Vce=-10V,Ic=-15mA 2 High-speed switching characterstics +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute Maximum Ratings Ta = 25 Parameter
Kexin
Original
transistor marking T93 PNP 5GHz TRANSISTOR PNP 5GHz PT-200
Abstract: Transistors Diodes IC SMD Type Product specification 2SA1978 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 High fT (fT=5.5GHz TYP). 0.4 3 Features 1 0.55 High gain |S21e|2=10.0dB TYP.@f=1.0GHz,Vce=-10V,Ic=-15mA 2 High-speed switching characterstics +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute Maximum Ratings Ta = 25 Parameter TY Semiconductor
Original

221-166

Abstract: transistor marking T93 PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = -10 V, IC = -15 mA NE97833 2SA1978 33 UNITS
-
Original
NE02133 221-166 ne02133 MARKING S21E
Abstract: PARAMETERS AND CONDITIONS UNITS MIN NE97833 2SA1978 33 TYP MAX fr NF IS21EI2 hFE ICBO Iebo C re* Gain -
OCR Scan
E97833 IS22I2 IS12I IS12S21I NE97833-T1
Abstract: CHARACTERISTICS (Ta=25 c) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NE97833 2SA1978 33 -
OCR Scan

221-166

Abstract: 2SA1978 PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = -10 V, IC = -15 mA NE97833 2SA1978 33 UNITS
NEC
Original
k 2445 transistor
Abstract: REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fr NF |S21e |2 hFE IC B O = 25 c ) NE97833 2SA1978 33 UNITS -
OCR Scan
Abstract: |S21E|2 hFE ICBO IEBO C RE2 NE97833 2SA1978 33 UNITS GHz dB dB A A pF mW 0.5 8.0 20 MIN 4.0 TYP 5.5 California Eastern Laboratories
Original
NE97833-T1B-A

transistor marking T79 ghz

Abstract: marking code C1H mmic 0.5 5013 2SA1978 2SA1977 2570A 5.0 60 5.3 250 5.5 30 6.0 150 7.0 , 1 0.5 1 -8 -20 2SA1978 (NE97833) -20 -12 -3 200 -10 -15 20 , T93 3MM 2SA1978 (NE97833) 1.0 10.0 10 5 1.0 1.5 3.0 MAG = 11.5 dB (TYP
NEC
Original
transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic data book transistors 2SA PU10015EJ04V0PF

2SA1978

Abstract: NE02133 PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = -10 V, IC = -15 mA NE97833 2SA1978 33 UNITS
California Eastern Laboratories
Original

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 -20 1 000 NF = 1.5 dB 3MM 2SA1978 (NE97833) General Purpose, Bip. Tr., (PNP) -10
NEC
Original
marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y g2b 6-pin smd NE582M03 P14740 P14740EE5V0PF00

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 ) General Purpose, Bip. Tr., (PNP) -8 -20 1 000 NF = 1.5 dB 3MM 2SA1978 (NE97833
NEC
Original
nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d LGA 1155 PIN diagram MMIC SOT 363 marking CODE R33 MMIC SOT 363 marking CODE 77 G0706 PX10727EJ02V0PF

FET marking code g5d

Abstract: PG2179TB NE856M02 2SC5336 NE68030 2SC4228 NE97733 2SA1977 NE68033 2SC3585 NE97833 2SA1978
Renesas Electronics
Original
PG2179TB marking code C1E mmic 2SC3357/NE85634 PC8230TU PG2163T5N sot-23 g6g R09CL0001EJ0100

SMD M05 sot23

Abstract: transistor smd m05 California Eastern Laboratories (CEL / NEC) - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi NEC 2SC4184 NEC 2SC4226 NEC 2SC4227 NEC 2SC4228 Hitachi Hitachi Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Matsushita NEC 2SC4536 Hitachi Hitachi Matsushita Matsushita Matsushita
California Eastern Laboratories
Original
SMD M05 sot23 transistor smd m05 A3 smd sot-343 nE352 SMD transistor M05 NE5531 2013/4M
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