ENN5182 2SA1967 2010C O3003TN /91098HA /92095YK TA-0444 --10V

NPN Triple Diffused Planar Silicon Transistor 2SA1967 High-Voltage Amplifier, High-Voltage Switching Applications Features

Ordering number:ENN5182 ENN5182 NPN Triple Diffused Planar Silicon Transistor 2SA1967 2SA1967 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions · High breakdown voltage (VCEO min=900V). · Small Cob (Cob typ=2.2pF). · High reliability (Adoption of HVP process). unit:mm 2010C 2010C [2SA1967 2SA1967] 10.2 3.6 4.5 5.1 18.0 15.1 6.3 2.7 1.3 14.0 5.6 1.2 0.8 2 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220AB 3 2.7 1 0.4 2.55 Specifications 2.55 Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO Emitter-to-Base Voltage Collector Current V 900 V VEBO IC Collector-to-Emitter Voltage 900 7 V 10 mA mA Collector Current (Pulse) ICP 30 Collector Dissipation PC 1.75 W Junction Temperature Tj 150 °C Storage Temperature Tstg 55 to +150 °C Electrical Characteristics at Ta = 25°C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=900V, IE=0 1 µA Emitter Cutoff Current IEBO VEB=5V, IC=0 1 µA DC Current Gain VCE=5V, IC=1mA Gain-Bandwidth Product hFE fT VCE=10V, IC=1mA 6 Output Capacitance Cob VCB=100V, f=1MHz 2.2 Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage VCE(sat) VBE(sat) 20 50 MHz pF IC=500µA, IB=100µA 1 V IC=500µA, IB=100µA 1.5 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=100µA, IE=0 900 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE= V(BR)EBO IE=100µA, IC=0 900 V 7 V Emitter-to-Base Breakdown Voltage Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O3003TN O3003TN (KT)/91098HA /91098HA (KT)/92095YK /92095YK (KOTO) TA-0444 TA-0444 No.51821/3 2SA1967 2SA1967 IC - VCE 35µA 30µA 25µA -0.6 20µA 15µA -0.4 10µA -0.2 5µA IB=0 0 0 -2 -4 -6 -8 -8 -6 -4 100µA -2 50µA IB=0 0 -10 0 -2 -4 -6 -8 -10 Collector-to-Emitter Voltage, VCE V hFE - IC VCE(sat) - IC 2 VCE= -5V 7 A 400µ A 200µ 150µA Collector-to-Emitter Voltage, VCE V 100 mA 1.0 A 00µ 8 A 600µ A A A A .8m 6m 4m .2m 1 1. 1. 1 2 .0m A Collector Current, IC mA -0.8 IC - VCE -10 40µA 50µA 45 µA Collector Current, IC mA -1.0 IC / IB=5 -10 7 5 3 2 -1.0 7 5 3 2 -0.1 7 -0.1 2 3 5 7 -1.0 2 3 5 7 -10 Collector Current, IC mA 7 -0.1 2 VBE(sat) - IC 3 IC / IB=5 3 5 7 -1.0 2 3 5 7 -10 2 3 Collector Current, IC mA IC - VBE(ON) VCE=5V 2 9 25°C 120°C 5 3 2 -0.1 7 6 5 40°C 7 8 25°C Ta= -40°C Ta=120°C -1.0 4 3 2 1 7 0 0 5 7 -0.1 2 3 5 7 -1.0 2 3 5 7 -10 2 f T - IC 2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base-to-Emitter ON Voltage, VBE(ON) V Collector Current, IC mA Cob - VCB 5 VCE= -10V f=1MHz 3 10 Output Capacitance, Cob - pF Gain-Bandwidth Product, fT GHz 2 10 Collector Current, IC mA Base-to-Emitter Saturation Voltage, VBE (sat) V 2 0° C 100 3 -4 -40°C 5 12 0 25 °C °C 2 7 Ta = 25°C Collector-to-Emitter Saturation Voltage, VCE (sat) V Ta=120°C 3 DC Current Gain, hFE 5 7 5 3 2 1.0 7 2 10 7 5 3 2 10 7 5 5 3 3 7 -1.0 2 3 5 7 -10 2 3 Collector Current, IC mA 5 7 -10 2 2 7 -1.0 2 3 5 7-10 2 3 5 7 -100 2 3 5 -1000 2 7 Collector-to-Base Voltage, VCB - V No.51822/3 2SA1967 2SA1967 Forward Bias A S O 5 1.75 2 0µ 10 m s 3 2 1.0 Single pulse Ta=25°C 5 7 -100 k 5 sin 7 1.2 at DC operation 1.6 he 10 1m s s o IC=10mA Collector Dissipation, PC W 50 N Collector Current, IC mA 100µs ICP=30mA 3 PC - Ta 2.0 0.8 0.4 0 2 3 5 7 -1000 Collector-to-Emitter Voltage, VCE V 2 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta °C Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2003. Specifications and information herein are subject to change without notice. PS No.51823/3