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2SA1943-O(Q) Toshiba America Electronic Components Bipolar Transistors PNP 230V 15A visit Digikey Buy
2SA1943N(S1,E,S) Toshiba America Electronic Components TRANS PNP 230V 15A TO-3PN visit Digikey Buy
176773-5 TE's AMP Multiple Circuit Housings with Tabs & Receptacles Including FASTIN-FASTON; 250 INT HSG CAP HSG 3P TOSHIBA ( AMP ) visit Digikey Buy
CMS05(TE12L,Q,M) Toshiba America Electronic Components DIODE SCHOTTKY 30V 5A 3-4E1A visit Digikey Buy
1SV324TPH3F Toshiba America Electronic Components DIODE TCXO/VCO 10V USC 1-1E1A visit Digikey Buy
CRY68(TE85L,Q,M) Toshiba America Electronic Components DIODE ZENER 0.7W 6.8V 3-2A1A visit Digikey Buy

2SA1943 toshiba

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2SA1943 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943 Power Amplifier , Note: hFE (1) classification R: 55 to 110, O: 80 to 160 1 2004-07-07 2SA1943 Marking Part No. (or abbreviation code) TOSHIBA 2SA1943 Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SA1943 IC ­ VCE -20 Common emitter Tc = 25 , °C °C 2-21F1A JEITA TOSHIBA Weight: 9.75 g (typ.) Electrical Characteristics (Ta = 25 Toshiba
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2SC5200

2SA1943 TOSHIBA

Abstract: 2sa1943 toshiba transistor 2SA1943 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943 Power Amplifier , abbreviation code) TOSHIBA 2SA1943 Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb , °C °C 2-21F1A JEITA TOSHIBA Note: Using continuously under heavy loads (e.g. the , design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook , report and estimated failure rate, etc). 1 2006-11-09 2SA1943 Electrical Characteristics (Ta =
Toshiba
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2SA1943 TOSHIBA 2sa1943 toshiba transistor 2sc5200 toshiba

2SA1943 toshiba

Abstract: 2sa1943 toshiba transistor datasheet 2SA1943 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943 Power Amplifier , Part No. (or abbreviation code) TOSHIBA 2SA1943 Lot No. JAPAN A line indicates lead (Pb)-free , temperature range JEDEC JEITA TOSHIBA 2-21F1A Note: Using continuously under heavy loads , absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba , 2SA1943 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ
Toshiba
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2sa1943 toshiba transistor datasheet 2sC5200, 2SA1943 2sa1943 amplifier power amplifier 2sc5200 2sa1943 TRANSISTOR 100w audio amplifier 2sc5200 2sa1943 transistor

2sa1943 applications circuits

Abstract: 2sc5200 transistor data 2SA1943 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943 Power Amplifier , Marking TOSHIBA Part No. (or abbreviation code) 2SA1943 Lot No. JAPAN Note 2 Note 2: A , (s) 4 2012-08-31 2SA1943 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its , °C JEDEC JEITA TOSHIBA 2-21F1A Weight: 9.75 g (typ.) Note: Using continuously under heavy , design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
Toshiba
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2sa1943 applications circuits 2sc5200 transistor data toshiba 2sc5200 audio power amplifier

toshiba 2SA1943

Abstract: 2SA1943 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943 Power Amplifier , to 110, O: 80 to 160 Marking TOSHIBA Part No. (or abbreviation code) 2SA1943 Lot No , °C) Junction temperature Storage temperature range JEDEC JEITA TOSHIBA 2-21F1A Weight: 9.75 g (typ , Toshiba Semiconductor Reliability Handbook (â'Handling Precautionsâ'/Derating Concept and Methods) and , 2012-08-31 2SA1943 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition
Toshiba
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toshiba 2SA1943

power amplifier 2sc5200 2sa1943 TRANSISTOR

Abstract: TOSHIBA 2SA1943 TO SH IBA TOSHIBA TRANSISTOR 2SA1943 POWER AMPLIFIER APPLICATIONS 2SA1943 SYMBOL VCBO , 2001 10-29 - TO SH IBA 2SA1943 r th - tw PULSE WIDTH tw (s) 3 2001 10-29 - TO SH IBA 2SA1943 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to , JEDEC T stg JEITA TOSHIBA 2-21F1A Weight : 9.75 g (Typ.) ELECTRICAL CHARACTERISTICS (Tc = 25°C) SYMBOL , (Note) : hpE (1) Classification R : 55~110, O : 80~160 1 2001 10-29 - TO SH IBA 2SA1943
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transistor 2sc5200 y 2sa1943 Scans-005879 transistor 2SA1943 A 1029 - A Toshiba transistor 2sa1943

2SA1943

Abstract: 2sC5200, 2SA1943 TO SH IBA T O S H IB A TRANSISTOR 2SA1943 POWER AM PLIFIER APPLICATIO NS 2SA1943 SYMBOL , A 1. BASE W 2. COLLECTOR (H E A T S IN K) 3. EMITTER °C °C JEDEC EIAJ TOSHIBA 2-21F1A Weight : 9.75 , 000707EAA2 TOSHIBA is contin u ally w o rkin g to im prove th e q u a lity and re lia b ility o f , e buyer, w hen utilizing TOSHIBA products, to com ply w ith th e standards o f safety in m aking a , such TOSHIBA products could cause loss o f human life, bodily injury or dam age to property. In
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2sa1943 transistor 2SC5200

2sC5200, 2SA1943

Abstract: 2SA1943 ) () Cob R: 55~110, O: 80~160 () TOSHIBA 2SA1943 No. JAPAN (: : ) 2 2006-11-07 2SA1943 IC ­ VCE IC ­ VBE -20 -20 VCE = -5 V IC -250 -12 (A , 2SA1943 PNP 2SA1943 : mm · : VCEO = -230 V () · 2SC5200 · 100 W , ) : 9.75 g () ( ) () 1 2006-11-07 2SA1943 (Ta = 25 , VCEO max -300 -1000 VCE (V) 2006-11-07 2SA1943 rth ­ tw rth (°C /W) 10
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2SA1943 2SC5200 20070701-JA

2SA1943 toshiba

Abstract: power amplifier 2sc5200 2sa1943 TRANSISTOR TOSHIBA TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS 2SA1943 2SA1943 SYMBOL VCBO VCEO RATING -230 -230 -5 -1 5 -1 .5 150 150 -5 5 -1 5 0 SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm , 20.5MAX. t ^ ^3.3 ±0.2 - · · Complementary to 2SC5200 Recommended for 100W High , w ith o u t notice. 0 0 1997 05-06 1/2 - TOSHIBA 2SA1943 -20 < o IC - VCE , ic A :B 1. BASE W PC 2. COLLECTOR (HEAT SINK) 3. EMITTER °C Tj °C JEDEC Tstg EIAJ TOSHIBA 2-21F1A
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2sc5200 transistor 961001EAA2

toshiba 2Sa1943

Abstract: 2sa1943 transistor 2SC5200 TOSHIBA TOSHIBA TRANSISTOR 2SA1943 POWER AMPLIFIER APPLICATIONS 2 SA 1 9 4 3 SYMBOL VCBO , TOSHIBA 2SA1943 lC - VCE Ic - VßE 0 -2 -4 -6 -8 -1 0 COLLECTOR-EMITTER VOLTAGE Vçje (V , JEDEC Tstg EIAJ TOSHIBA 2-21F1A Weight : 9.75g (Typ.) ELECTRICAL CHARACTERISTICS (Ta=25°C) SYMBOL TEST , (1) Classification R : 55~110, O : 80-160 # # # TOSHIBA is continually w orking to , stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of
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2sa1943 toshiba transistor

Abstract: T O S H IB A TOSHIBA TRANSISTOR 2SA1943 PO W ER AM PLIFIER APPLICATIONS 2SA1943 SYMBOL VCBO VCEO RATING -230 -230 -5 -1 5 -1 .5 150 150 -5 5 -1 5 0 SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 20.5MAX. ^3.3 ±0.2 · · Complementary to 2SC5200 Recommended for 100W High Fidelity , TOSHIBA 2-21F1A Weight : 9.75g(Typ.) ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL TEST CONDITION MIN. TYP , - 05-06 1/2 T O S H IB A 2SA1943 le - VCE -2 0 < Ic - V b e o -1 6 -1 2 COMMON
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Abstract: 2SA1943 TO SHIBA 2 S A 1 943 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 20.5MAX. â'¢ â'¢ ^3.3 ±0.2 Complementary to 2SC5200 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M , . EMITTER °C Tj °C JEDEC Tstg EIAJ TOSHIBA 2-21F1A Weight : 9.75g(Typ.) ELECTRICAL CHARACTERISTICS , contained herein is subject to change w ith o u t notice. 1997- 05-06 1/2 2SA1943 TO SHIBA le -
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2sC5200, 2SA1943

Abstract: TOSHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5200 2SC52QQ POWER AMPLIFIER APPLICATIONS 20 .5 M AX. Unit in mm ¿ 3 .3 ± 0 .2 Complementary to 2SA1943 Recommended for 100W High , SINK) 3. EMITTER JED EC E IA J TOSHIBA 2-21F1A ELECTRICAL CHARACTERISTICS (Ta , ) Classification V V MHz pF - - - R : 55~110, # # # TOSHIBA is continually w orking to , stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of
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2sc5200

Abstract: TRANSISTOR 2SC5200 2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm · High breakdown voltage: VCEO = 230 V (min) · Complementary to 2SA1943 , Storage temperature range TOSHIBA Electrical Characteristics (Tc = 25°C) Characteristics Weight , abbreviation code) TOSHIBA 2SC5200 Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb , applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or
Toshiba
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TRANSISTOR 2SC5200 2sc5200 amplifier circuit 2sc5200 amplifier IC free 100W AUDIO ic AMPLIFIER 100-W

power amplifier 2sc5200 2sa1943 TRANSISTOR

Abstract: 2sC5200, 2SA1943 TOSHIBA 2SC5200 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 2 0 0 POWER AMPLIFIER APPLICATIONS Unit in mm â'¢ Complementary to 2SA1943 â'¢ Recommended for 100W High Fidelity Audio , '" TOSHIBA 2-21F1A ELECTRICAL CHARACTERISTICS (Ta = 25°C) Weight : 9.75g(Typ.) CHARACTERISTIC , '" 200 â'" pF Note : hpE (1) Classification R : 55-110, O : 80-160 961001EAA2 # TOSHIBA is continually , stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of
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amplifier circuit using 2sa1943 and 2sc5200

Abstract: SMD TRANSISTOR H2A NPN PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a , Supplies Using a crystal mesh pattern, Toshiba has reduced the storage time (tstg) and fall time (tf , electronic devices fuelling demand for SMD-type power transistors, Toshiba provides the following packages , a minute pattern and a high-density MET design, Toshiba has achieved high levels of current
Toshiba
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amplifier circuit using 2sa1943 and 2sc5200 SMD TRANSISTOR H2A NPN TTA1943 A06 smd transistor MARKING SMD PNP TRANSISTOR Wf MARKING SMD PNP TRANSISTOR h2a

120w audio power amplifier

Abstract: SILICON NPN TRIPLE DIFFUSED TYPE 2SC5200 U n it in mm POWER AMPLIFIER APPLICATIONS. 20.5MAX ¿3.3 +0.2 · · Complementary to 2SA1943 Recommended for 120W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS (Ta = 25°C) SYMBOL RATING CHARACTERISTIC Collector-Base Voltage 230 VCBO Collector-Emitter Voltage 230 VCEO Emitter-Base Voltage 5 Vebo Collector Current 15 ic Base , EIAJ TOSHIBA - 2-21F1A W eight : 9.75g SYMBOL TEST CONDITION CHARACTERISTIC Vc b =230V, IE =0
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120w audio power amplifier

2sc5200 transistor use audio amplifiers amplifier

Abstract: 2sc5200 toshiba 2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm · High breakdown voltage: VCEO = 230 V (min) · Complementary to 2SA1943 , temperature Storage temperature range TOSHIBA 2-21F1A Note: Using continuously under heavy loads (e.g , maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor , code) TOSHIBA 2SC5200 Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb
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2sc5200 transistor use audio amplifiers amplifier audio amplifier 2SC5200 DATA SHEET TRANSISTOR 2SC5200 2sc5200 amplifiers Toshiba 2SC5200 toshiba audio power amplifier

tr 2sc5200

Abstract: power amplifier 2sc5200 2sa1943 TRANSISTOR T O SH IB A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5200 POWER AMPLIFIER APPLICATIONS 2SC5200 20.5MAX. ^3.3 ±0.2 Unit in mm · · Complementary to 2SA1943 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. SYMBOL VCBO VCEO RATING 230 230 5 15 1.5 150 , . BASE W PC 2. COLLECTOR (HEAT SINK) 3. EMITTER °C Tj °C JEDEC Tstg EIAJ TOSHIBA 2-21F1A Weight : 9.75g , subject to ch an g e w ith o u t notice. # # 1997 - 05-06 1/2 TOSHIBA COLLECTOR CURRENT Ic
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tr 2sc5200 tr 2SA1943

2sc5200 toshiba

Abstract: toshiba 2SC5200 2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm · · · High breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1943 Suitable for , JEITA TOSHIBA 2-21F1A Note: Using continuously under heavy loads (e.g. the application of high , appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions , ) classification R: 55 to 110, O: 80 to 160 Marking Part No. (or abbreviation code) TOSHIBA 2SC5200
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