NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SA1832 | N/A | Transistor Substitution Data Book 1993 |
1 pages, |
Scan | |
| 2SA1832 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
Scan | |
| 2SA1832 | Sensitron Semiconductor | Audio Frequency General Purpose Amplifier Applications |
3 pages, |
Original | |
| 2SA1832 | Sensitron Semiconductor | Audio Frequency General Purpose Amplifier Applications |
3 pages, |
Original | |
| 2SA1832 | Toshiba | PNP transistor |
3 pages, |
Scan | |
| 2SA1832 | Toshiba | TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
2 pages, |
Scan | |
| 2SA1832 | Toshiba | SILICON PNP EPITAXIAL TYPE (PCT PROCESS) |
3 pages, |
Scan | |
| 2SA1832 | Transys Electronics | Plastic-Encapsulated Transistors |
2 pages, |
Original | |
| 2SA1832 | N/A | Japanese Transistor Cross References (2S) |
1 pages, |
Scan | |
| 2SA1832F | N/A | PNP transistor |
3 pages, |
Scan | |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2SA1832 SOT-523 2SA1832 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES Power dissipation PCM : 0.1 3. COLLECTOR W (Tamb=25) Collector current ICM : -0.15 A Collector-base voltage V V(BR)CBO : -50 Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter unless otherwise specified) Symbol Test conditions , :wej@yongerjia.com pF 2SA1832 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com ... | Original |
2 pages, |
2SA1832 2SA1832 abstract |
| Abstract: - 43 - m € Type No. a € Manuf. H SANYO S s TOSHIBA 0 « NEC 0 iL HITACHI » ± il FUJITSU fâ T MATSUSHITA = * MITSUBISHI P - A ROHM 2SA 1865 H $ 2SA1832 2S31462 2S31462 2SA 1866 H # 2SA1832 2SB1462 2SB1462 2SA 1867 a i 2SA1745 2SA1745 2SA1588 2SA1588 2SB1475 2SB1475 2SB1219 2SB1219 2SA 1868 fé T 2SA1772 2SA1772 2SA1400-Z 2SA1400-Z 2SA1727 2SA1727 2SA 1 869 . S 3> 2SB1274 2SB1274 2SA1359 2SA1359 2SB1094 2SB1094 2SB941 2SB941 2SB1185 2SB1185 2SA 1873 SE S XP1401 XP1401 UMS1 2SA 1875 H » 2SA1400-Z 2SA1400-Z 2SA1868 2SA1868 2SA 1878 îïrlËTt; 2SB1454 2SB1454 2SB1381 2SB1381 2SA1650 2SA1650 2SB945 2SB945 2SA 1879 StSTÈ 2SB1455 2SB1455 2SB1021 2SB1021 ... | OCR Scan |
1 pages, |
1866 2SA1400-Z 2sa158 2SA1588 2sa1727 2SA1745 2SA1772 2SA1832 2SB1219 2SB1308 2SB1462 2SB1475 2sb941 nec 772 UMS1 2SA1832 abstract |
| Abstract: 2SA1832 PNP (PCT) 2SA1832 · : mm : VCEO = -50 V · : IC = -150 mA () · · hFE : hFE = 70~400 : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 () · 2SC4738 2SC4738 , () (//) (/) () () 1 2007-11-01 2SA1832 (Ta = 25°C , 2007-11-01 2SA1832 IC  VCE IB  VBE -1000 -240 -2.0 -300 VCE = -6 V -100 (A , 100 120 140 (°C) 2007-11-01 2SA1832 · · · · ... | Original |
4 pages, |
2SC4738 2SA1832 2SA1832 abstract |
| Abstract: 2SA1832 PNP (PCT) 2SA1832 · : mm : VCEO = -50 V · : IC = -150 mA () · · hFE : hFE = 70~400 : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 () · 2SC4738 2SC4738 , () (//) (/) () () 1 2007-11-01 2SA1832 (Ta = 25°C , 2007-11-01 2SA1832 IC  VCE IB  VBE -1000 -240 -2.0 -300 VCE = -6 V -100 (A , 100 120 140 (°C) 2007-11-01 2SA1832 · · · · ... | Original |
4 pages, |
2SC4738 2SA1832 2SA1832 abstract |
| Abstract: 2SA1832 -0.15A , -50V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-523 FEATURES High Voltage and High Current Excellent hFE Linearity Complementary to 2SC4738 2SC4738 A M 3 3 C B Top View CLASSIFICATION OF hFE 1 1 Product-Rank 2SA1832-Y 2SA1832-GR Range 120~240 , individually. Page 1 of 2 2SA1832 Elektronische Bauelemente -0.15A , -50V PNP Silicon Plastic ... | Original |
2 pages, |
2SA1832 2SC4738 2SA1832 abstract |
| Abstract: Transys Electronics L I M I T E D SOT-523 Plastic-Encapsulated Transistors SOT-523 2SA1832 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation PCM : 0.1 W (Tamb=25) Collector current : -0.15 A ICM Collector-base voltage V V(BR)CBO : -50 Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 , SY SG pF Typical Characteristics 2SA1832 ... | Original |
2 pages, |
2SA1832 datasheet abstract |
| Abstract: SOT-523 Plastic-Encapsulate Transistors SOT-523 2SA1832 TRANSISTORPNP 1. BASE 2. EMITTER FEATURES Power dissipation PCM : 0.1 WTamb=25 Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJTstg: -55 to +150 ELECTRICAL CHARACTERISTICSTamb=25 Symbol Parameter Test 3. COLLECTOR unless otherwise , Characteristics 2SA1832 ... | Original |
2 pages, |
2SA1832 marking SG transistors 2SA1832 abstract |
| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors SOT-523 2SA1832 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation PCM : 0.1 W (Tamb=25) Collector current : -0.15 A ICM Collector-base voltage V V(BR)CBO : -50 Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL , 120-240 200-400 SY SG pF Typical Characteristics 2SA1832 ... | Original |
2 pages, |
2SA1832 2SA1832 abstract |
| Abstract: a 2SA1832 2SB1462 2SB1462 2SA1774 2SA1774 2SA 1 837 ' se s 2SB1171A 2SB1171A 2SA 1838 H $ 2SB1219 2SB1219 , 2SA1773 2SA1773 2SA1412 2SA1412 2SA 1863 â- E # 2SA1885 2SA1885 2SA 1864 E. if 2SA1832 2SB1462 2SB1462 ... | OCR Scan |
1 pages, |
1863 2SA1020 2SA1371 2SA1532 2SA1793 2SA1885 2SB1433 2SB1434 2sb946a 2SB1447 2SB892 2SB946 2SB1413 2SA1115 K 1833 2SB892 abstract |
| Abstract: 2SA1832 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832 Audio Frequency General Purpose Amplifier Applications · High voltage and high current: VCEO = -50 V, IC = -150 mA (max) · Unit: mm Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) · High hFE: hFE = 70~400 · Complementary to 2SC4738 2SC4738 · Small package Maximum , 2003-03-27 2SA1832 2 2003-03-27 2SA1832 RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · ... | Original |
3 pages, |
2SC4738 2SA1832 2SA1832 abstract |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 2SA1832 | N/A | RLN | ||
| 2SA1832 | N/A | Silicon PNP | ||
| 2SA1832GR | Toshiba | Si PNP Lo-Pwr BJT | ||
| 2SA1832O | Toshiba | Si PNP Lo-Pwr BJT | ||
| 2SA1832Y | Toshiba | Si PNP Lo-Pwr BJT |
| Infineon (Siemens) Part | Status | Industry Part | Manufacturer | Description |
| BC857BWE6327 Buy | Discontinued | 2SA1832 Buy | Toshiba |
| KEC Part | Industry Part | Manufacturer | Category | Description |
| KTA2014E Buy | 2SA1832 Buy | Toshiba | BJT | General Purpose Transistor |
| KTA2014E Buy | 2SA1832F Buy | Toshiba | BJT | General Purpose Transistor |
| KTA2014V Buy | 2SA1832FT Buy | Toshiba | BJT | General Purpose Transistor |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| 2SA1774 Buy | 2SA1832 Buy | Toshiba | Direct |
| MMBT3906TT1G Buy | 2SA1832GR Buy | Toshiba | Close |
| MMBT3906TT1G Buy | 2SA1832O Buy | Toshiba | Close |
| MMBT3906TT1G Buy | 2SA1832Y Buy | Toshiba | Close |
| Panasonic Part | Manufacturer | Similar Part | Manufacturer |
| Toshiba Part | Industry Part | Manufacturer | Description | Category |
| 2SA1832 Buy | 2SA1774 Buy | Rohm | Transistor for Low-Frequency Small-Signal Amplification - SSM - SOT-416 | Transistors |
| 2SA1832 Buy | 2SA1836 Buy | NEC Electronics | Transistor for Low-Frequency Small-Signal Amplification - SSM - SOT-416 | Transistors |
| Part | Similar Part | Notes |
| 2SA1832 Buy | 2N3905 Buy | |
| 2SA1832 Buy | 2SA1791 Buy | |
| 2SA1832 Buy | 2SB1462 Buy | |
| 2SA1832 Buy | A1774 Buy | |
| 2SA1832 Buy | B1462 Buy | |
| 2SA1832 Buy | KT361K Buy | |
| 2SA1832(F/FT) Buy | 2SA1774 Buy | |
| 2SA1832(F/FT) Buy | 2SA1836 Buy | |
| 2SA1832(F/FT) Buy | 2SB1462 Buy |