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Part : 2SA1736(TE12L,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 6,950 Best Price : $1.87 Price Each : $2.29
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2SA1736 Datasheet

Part Manufacturer Description PDF Type
2SA1736 Kexin Power Switching Applications Original
2SA1736 Micro Commercial Components TRANS GP BJT PNP 50V 3A 3SOT-89 Original
2SA1736 TY Semiconductor Power Switching Applications - SOT-89 Original
2SA1736 N/A Japanese Transistor Cross References (2S) Scan
2SA1736 N/A Catalog Scans - Shortform Datasheet Scan
2SA1736 N/A The Transistor Manual (Japanese) 1993 Scan
2SA1736 N/A Transistor Substitution Data Book 1993 Scan
2SA1736 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SA1736 Toshiba Silicon PNP transistor for power amplifier and power switching applications Scan
2SA1736 Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE(PCT PROCESS) Scan

2SA1736

Catalog Datasheet MFG & Type PDF Document Tags

2SA1736

Abstract: 2SC4541 2SA1736 PNP (PCT) 2SA1736 · : mm · : VCE (sat) = -0.5 V () (IC = -1.5 A) · , 2009-12-21 2SA1736 (Ta = 25 , 2009-12-21 2SA1736 IC ­ VCE hFE ­ IC -4 1000 Ta = 100°C hFE 300 -30 -3 , -30 -100 3 IC -300 -1000 -3000 (mA) 2009-12-21 2SA1736 IC ­ VBE , Ta 120 140 160 (°C) 4 2009-12-21 2SA1736 · · ·
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Original
2SC4541 SC-62

2SA1736

Abstract: 2SC4541 2SA1736 PNP (PCT) 2SA1736 · : mm · : VCE (sat) = -0.5 V () (IC = -1.5 A) · , : (//) ( / ) () () 1 2006-11-07 2SA1736 (Ta = 25 , VCC = -30 V () L No. D (: : ) 2 2006-11-07 2SA1736 IC ­ VCE hFE ­ , IC -300 -1000 -3000 (mA) 2006-11-07 2SA1736 IC ­ VBE -10 -3.0 IC max , 2006-11-07 2SA1736 20070701-JA · · " " · · · RoHS RoHS
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Original

2SA1736

Abstract: 2SC4541 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1736 Power Amplifier , 2SA1736 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ , 2004-07-07 2SA1736 IC ­ VCE hFE ­ IC -4 1000 300 hFE -3 Ta = 100°C Ta = 25 , 2SA1736 IC ­ VBE Safe Operating Area -10 -3.0 IC max (pulse)* IC max (continuous) Common , ) 4 2004-07-07 2SA1736 RESTRICTIONS ON PRODUCT USE 030619EAA · The information
Toshiba
Original

2SA1736

Abstract: 2SC4541 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1736 Power Amplifier , (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SA1736 , 2006-11-09 2SA1736 IC ­ VCE hFE ­ IC -4 1000 -3 Ta = 100°C Ta = 25°C -80 -60 , -30 -100 -300 Collector current IC 3 -1000 -3000 (mA) 2006-11-09 2SA1736 , 100 120 140 160 Ambient temperature Ta (°C) 4 2006-11-09 2SA1736 RESTRICTIONS
Toshiba
Original
Abstract: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1736 Power Amplifier , substrate (250 mm × 0.8 t) 1 2002-08-13 2SA1736 Electrical Characteristics (Ta = 25 , % VCC = -30 V 0.1 Marking Type name LD 2 2002-08-13 2SA1736 IC ­ VCE -4 Common , Collector current IC (mA) Collector current IC (mA) 3 2002-08-13 2SA1736 IC ­ , 2SA1736 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the Toshiba
Original
Abstract: SMD Type Product specification 2SA1736 Features Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1.5A) High Speed Switching Time: tstg = 0.2ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC4541 Absolute Maximum Ratings Ta = 25 Parameter , 0.2 ìs 0.1 4008-318-123 1 of 3 SMD Type Product specification 2SA1736 Test , sales@twtysemi.com 4008-318-123 2 of 3 SMD Type Product specification 2SA1736 http://www.twtysemi.com TY Semiconductor
Original
Abstract: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1736 Power Amplifier , substrate (250 mm × 0.8 t) 1 2002-08-13 2SA1736 Electrical Characteristics (Ta = 25 , % VCC = -30 V 0.1 Marking Type name LD 2 2002-08-13 2SA1736 IC ­ VCE -4 Common , IC (mA) Collector current IC (mA) 3 2002-08-13 2SA1736 IC ­ VBE -3.0 Common , 60 80 100 120 140 160 Ambient temperature Ta (°C) 4 2002-08-13 2SA1736 Toshiba
Original

2SA1736

Abstract: 2SC4541 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1736 2SA1736 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 4.6MAX. 1.7MAX. U n it in mm 1.6MAX. -j- , Type Name LD m 1 2 001 10-29 - TO SH IBA 2SA1736 ELECTRICAL CHARACTERISTICS (Ta = , E (sat) (V) < d d o O O NJ NJ VO TO SH IBA 2SA1736 ic - VRE SAFE , * COLLECTOR-EMITTER VOLTAGE PC - Ta 4 2 001 10-29 - TO SH IBA 2SA1736 RESTRICTIONS ON PRODUCT USE
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OCR Scan
M2X marking marking HE

2SA1736

Abstract: 2SC4541 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1736 Power Amplifier , report and estimated failure rate, etc). 1 2009-12-21 2SA1736 Electrical Characteristics (Ta = , electronic equipment. 2 2009-12-21 2SA1736 IC ­ VCE hFE ­ IC -4 1000 -3 Ta = 100 , ) 2009-12-21 2SA1736 Safe Operating Area IC ­ VBE -10 -3.0 Common emitter VCE = -2 V -2.5 , 2SA1736 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates
Toshiba
Original

2SA1736

Abstract: 2SC4541 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1736 2SA1736 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 4.6MAX. 1.7MAX. U n it in mm 1.6MAX. -J- , ) LD m 1 2 001 05-31 - TO SH IBA 2SA1736 ELECTRICAL CHARACTERISTICS (Ta = 25 , O 0 0 U 1 1 Ul 1 TO SH IBA 2SA1736 ic - VRE SAFE OPERATING AREA SINGLE , VOLTAGE PC - Ta 4 2 001 05-31 - TO SH IBA 2SA1736 RESTRICTIONS ON PRODUCT USE
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OCR Scan
Abstract: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1736 Power Amplifier , failure rate, etc). 1 2006-11-09 2SA1736 Electrical Characteristics (Ta = 25 , lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SA1736 IC ­ VCE -4 Common , IC (mA) Collector current IC (mA) 3 2006-11-09 2SA1736 IC ­ VBE -3.0 Common , 2006-11-09 2SA1736 RESTRICTIONS ON PRODUCT USE · The information contained herein is subject to Toshiba
Original

2SA1736

Abstract: 2SC4541 TOSHIBA TOSHIBA TRANSISTOR 2SA1736 PO W ER AM PLIFIER APPLICATIONS PO W ER SWITCHING APPLICATIONS 2SA1736 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm 4.6MAX. 1.7MAX. 1.6MAX -j-0.4 + 0.05 Low Saturation Voltage: V q ^ (sat)= -0.5V (Max.) (Iq = -1.5A) High Speed Switching , change w ith o u t notice. 0 0 1997 04-10 1/4 - TOSHIBA 2SA1736 ELECTRICAL , COLLECTOR-EMITTER SATURATION BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) O TO SHIBA 2SA1736 ic -
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OCR Scan
961001EAA2 40X50X0
Abstract: TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1736 2SA1736 PO W ER AM PLIFIER APPLICATIONS PO W ER SWITCHING APPLICATIONS 4.6MAX. 1.7MAX. U nit in mm l.GM A X. 0.4+0.05 · · · · · Low Saturation Voltage: Vq e (sat)= -0.5V(Max.) (1^= -1.5A) High Speed Switching , TOSHIBA 2SA1736 ELECTRICAL CHARACTERISTICS Ta = 25°C) CHARACTERISTIC Collector Cut-off Current E , LTA G E V b e (sat! (V) O TOSHIBA 2SA1736 IC - V R E SAFE OPERATING AREA -1 0 -
OCR Scan

smd marking LD

Abstract: ld smd transistor Transistors SMD Type Power Switching Applications 2SA1736 Features Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1.5A) High Speed Switching Time: tstg = 0.2ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC4541 Absolute Maximum Ratings Ta , Transistors SMD Type 2SA1736 Test Circuit Marking Marking LD Electrical Characteristics Curves 2 www.kexin.com.cn Transistors SMD Type 2SA1736 www.kexin.com.cn 3 Kexin
Kexin
Original
smd marking LD ld smd transistor 2SA1736 EQUIVALENT smd transistor 2A smd transistor MARKING 2A smd marking TF
Abstract: 2SA1736 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS SILICON PNP EPITAXIAL TYPE Unit in mm 1.7 MAX. 4.6MAX. 1.6 MAX. 0 .4 ± 0 05 Low Saturation Voltage : V c e (sat)=-0.5A(Max.) (IC=-1.5A) High Speed Switching: tstg=0-2^s (Typ.) Small Flat Package Pc=l~2W (Mounted on , 2SA1736 COLLECTOR POWER DISSIPATION © © t\3 Pc W) © ^ O ¿7» © 30 - © - t\5 , 00 s H i ? P3 / t I/ / y f/ 1/ Ta 1 2SA1736 I I COLLECTOR CURRENT I B AS E-ÜM -
OCR Scan
Abstract: T O SH IB A 2SA1736 2 S A 1 736 TO S H IB A TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm POWER SW ITCHING APPLICATIONS 1 .6 M A X . , 1997 - 04-10 1/4 T O SH IB A 2SA1736 ELECTRICAL CHARACTERISTICS Ta = 25 , > 3 3 /4 2SA1736 1 9 9 7 -0 4 -1 0 iâ'" * o o r f M o H O T O SH IB A 2SA1736 ic - SAFE OPERATING AREA vbe -10 < o H £ Ed tó O S D ü o Ta -
OCR Scan

2sb1355

Abstract: 2SB1493 2SA1736 2SB1573 2SB 1573 fé T 2SB1202 2SB906 2SB1261 2SB1314 2SB1516 2SB 1574 fé T 2SB1201
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OCR Scan
2SB1329 2SB1332 2SA1770 2SB1328 2SB1274 2SA1842 2sb1355 2SB1493 2SR562 2SA1706 2SB1433 2SB1517 2SA1707
Abstract: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1736 Features · · · · · · Low saturation voltage: VCE(sat) =0.5V(Max.) (IC=1.5A) High speed switching: tstg=0.2us(Typ.) Small flat package PC=1~2W (Mounted on ceramic substrate) Complementary to 2SC4541 Marking code: LD PNP Silicon Power Transistors Maximum Ratings Symbol V CEO V CBO V EBO IC IB PC PC* TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Micro Commercial Components
Original

2SB897

Abstract: 2SB1483 2SA1020 2SB1446 2SB 1506 â¡ â'"A 2SB1124 2SA1736 2SB1572 2SB1519 2SB1440
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OCR Scan
2SA1709 2SA1704 2SA1692 2SA1774 2SA1719 2SB348 2SB897 2SB1483 2SB1453 2sb1497 2SB1434 2SB1117 2SB1452

2SA1148

Abstract: SA1757 c _n i; -0. 025 2SA1736 m. PA PSW -60 -50 -3 0.5 1 -0. 1 -60 120 400 -l -0.1 -0.5 -1.2 -1. 5 , * 0. 2* 32* 2SC4541 SCâ'"62 ECB 2SA1736 200 -5 -0.01 4 Ce-rb'b max 25ps f=31. 9MHz SCâ
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OCR Scan
2SA1725 2SA1727 2SA1728 2SA1729 2SA1731 2SA1732 2SA1148 SA1757 2SA1126 2SC456 2SA1140 2SA1747 2SA1726 SA1730

2sc 1203

Abstract: xn 1203 2SA1736 2SB1573 2SB 1573 fé T 2SB1202 2SB906 2SB1261 2SB1314 2SB1516 2SB 1574 fé T 2SB1201
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OCR Scan
2sc 1203 xn 1203 2sc 1735 kp 1830 Am 4541 transistors 2SA 1SS364 2SJ347 2SJ345 S04540
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