2SA1483 2SC3803 SC-62 000707EAA

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1483 High Frequency Amplifier Applications Video Amplifier

2SA1483 2SA1483 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1483 2SA1483 High Frequency Amplifier Applications Video Amplifier Applications High Speed SwitcHing Applications Unit: mm · High transition frequency: fT = 200 MHz (typ.) · Low collector output capacitance: Cob = 3.5 pF (typ.) · Complementary to 2SC3803 2SC3803 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -45 V Emitter-base voltage VEBO -5 V Continuous collector current IC -200 mA Continuous base current IB -50 mA PC 500 Collector power dissipation PC 1000 (Note 1) Junction temperature Storage temperature range mW PW-MINI JEDEC JEITA SC-62 SC-62 2-5K1A Tj 150 °C TOSHIBA Tstg -55 to 150 °C Weight: 0.05 g (typ.) 2 Note 1: Mounted on ceramic substrate (250 mm × 0.8 t) 1 2002-08-19 2SA1483 2SA1483 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = -45 V, IE = 0 -0.1 µA Emitter cut-off current IEBO VEB = -5 V, IC = 0 -0.1 µA VCE = -1 V, IC = -10 mA 40 240 hFE (2) VCE = -3 V, IC = -200 mA 20 Collector-emitter saturation voltage VCE (sat) IC = -100 mA, IB = -10 mA -0.3 V Base-emitter saturation voltage VBE (sat) IC = -100 mA, IB = -10 mA -1.0 V fT VCE = -10 V, IC = -10 mA 100 200 MHz VCE = -10 V, IE = 10 mA, f = 200 MHz 120 VCB = -10 V, IE = 0, f = 1 MHz 3.5 5 pF 40 250 30 (Note 2) Transition frequency Input impedance (real part) Re (hie) Collector output capacitance Cob Turn-on time ton OUTPUT Storage time tstg 0 -10 V 500 Switching time 50 INPUT 680 VBB =3V DUTY CYCLE 2% 1 µs Fall time tf Note 2: hFE (1) classification 200 hFE (1) DC current gain VCC = -12 V ns R: 40 to 80, O: 70 to 140, Y: 120 to 240 Marking Type name hFE classification WO 2 2002-08-19 2SA1483 2SA1483 IC VCE hFE IC 1000 -160 hFE -5.0 Ta = 25°C DC current gain Collector current Common emitter Common emitter -10 -3.0 IC (mA) -200 -2.0 -120 -1.5 -1.0 -80 VCE = -3 V 300 Ta = 100°C 25 100 -55 50 30 10 -0.1 -0.5 -40 500 -0.3 -1 -3 -10 -30 IC (mA) Collector current IB = -0.2 mA -100 0 -1 -2 -3 -4 -5 Collector-emitter voltage VCE -6 (V) IC VCE -8.0 -200 Common emitter -0.3 Common emitter IC/IB = 10 -0.1 Ta = 100°C -0.05 -0.03 25 -55 -0.01 -0.1 -0.3 -1 -3 -10 -30 IC (mA) Collector current -100 -2.0 -120 -1.0 -0.6 -80 IB = -0.2 mA -40 0 0 0 -1 -2 -3 -4 -5 Collector-emitter voltage VCE -6 (V) Base-emitter saturation voltage VBE (sat) (V) Collector current VCE (sat) IC -0.5 -4.0 -160 IC (mA) Ta = 100°C Collector-emitter saturation voltage VCE (sat) (V) 0 0 VBE (sat) IC -5 -3 Common emitter IC/IB = 10 Ta = -55°C -1 -0.5 25 -0.3 100 -0.1 -0.1 -0.3 -1 -3 -10 -30 IC (mA) Collector current IC VCE -100 PC Ta 1.2 (W) Ta = -55°C Collector power dissipation PC Collector current Common emitter -6.0 -4.0 -160 -3.0 IC (mA) -200 -120 -2.0 -1.5 -80 -1.0 IB = -0.5 mA -40 1.0 (1) Mounted on ceramic substrate 2 (250 mm × 0.8 t) (2) No heat sink 0.8 0.6 0.4 0.2 0 0 0 -1 -2 -3 -4 Collector-emitter voltage VCE -5 0 0 -6 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) (V) 3 2002-08-19 2SA1483 2SA1483 RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 4 2002-08-19