ENN1425C 2SA1380/2SC3502 VCEO200V 2009B 2SA1380 92502AS /71598HA /10996TS - Datasheet Archive

 

PNP/NPN Epitaxial Planar Silicon Transistors 2SA1380/2SC3502 Ultrahigh-Definition CRT Display, Video Output Applications Package

 

Ordering number:ENN1425C ENN1425C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1380/2SC3502 2SA1380/2SC3502 Ultrahigh-Definition CRT Display, Video Output Applications Package Dimensions · High breakdown voltage : VCEO200V VCEO200V. · Small reverse transfer capacitance and excellent high-frequnecy characteristics : Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. · Adoption of FBET process unit:mm 2009B 2009B [2SA1380/2SC3502 2SA1380/2SC3502] 8.0 2.7 4.0 1.5 7.0 3.0 11.0 Features 3.0 1.6 0.8 0.8 0.6 15.5 0.5 ( ) : 2SA1380 2SA1380 2 3 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126 1.2 1 2.4 4.8 Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (­)200 V Collector-to-Emitter Voltage VCEO VEBO (­)200 V IC (­)100 mA ICP (­)200 mA 1.2 W Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation PC Junction Temperature Tj Storage Temperature (­)5 Tstg V 5 W 150 °C ­55 to +150 °C Tc=25°C Electrical Characteristics at Ta = 25°C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(­)150V, IE=0 (­)0.1 µA Emitter Cutoff Current IEBO (­)0.1 µA DC Current Gain hFE VEB=(­)4V, IC=0 VCE=(­)10V, IC=(­)10mA fT VCE=(­)30V, IC=(­)10mA Gain-Bandwidth Product 40* * : The 2SA1380/2SC3502 2SA1380/2SC3502 are classified by 10mA hFE as follows : Rank C D E 40 to 80 60 to 120 100 to 200 150 MHz Continued on next page. F hFE 320* 160 to 320 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92502AS 92502AS (KT)/71598HA /71598HA (KT)/10996TS /10996TS (KOTO) X-6422/3237KI/D134MW X-6422/3237KI/D134MW, TS No.1425-1/5 2SA1380/2SC3502 2SA1380/2SC3502 Continued from preceding page. Parameter Symbol Output Capacitance Cob Reverse Transfer Capacitance typ Unit max 1.7 pF (2.6) pF 1.2 VCB=(­)30V, f=1MHz VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage min VCB=(­)30V, f=1MHz Cre Collector-to-Emitter Saturation Voltage Ratings Conditions pF (1.7) pF IC=(­)20mA, IB=(­)2mA (­)0.6 V IC=(­)20mA, IB=(­)2mA (­)1.0 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(­)10µA, IE=0 (­)200 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(­)1mA, RBE= (­)200 V Emitter-to-Base Breakdown Votage V(BR)EBO (­)5 V IC - VCE -8 18 Collector Current, IC ­ mA 140µA -40µA -5 160µA 2SC3502 2SC3502 -50µA -6 IC - VCE 20 2SA1380 2SA1380 -7 Collector Current, IC ­ mA IE=(­)10µA, IC=0 -30µA -4 -20µA -3 -10µA 16 120µA 14 12 100µA 10 80µA 8 60µA 6 40µA 4 20µA -2 2 -1 0 -1 IB=0 -2 -3 -4 -5 -6 -7 -8 -9 -10 Collector-to-Emitter Voltage, VCE ­ V ITR03324 ITR03324 0 1 2 3 4 10 2SA1380 2SA1380 Collector Current, IC ­ mA Collector Current, IC ­ mA -50µA -40µA -6 -30µA -4 -20µA -2 -10µA 6 7 8 9 10 ITR03325 ITR03325 IC - VCE 2SC3502 2SC3502 80µA 70µA 9 -8 5 Collector-to-Emitter Voltage, VCE ­ V IC - VCE -10 IB=0 0 8 60µA 7 50µA 6 5 40µA 4 30µA 3 20µA 2 10µA 1 0 IB=0 -20 -40 -60 -80 Collector-to-Emitter Voltage, VCE ­ V 0 -100 30 40 50 60 70 80 90 100 ITR03327 ITR03327 IC - VBE 2SC3502 2SC3502 VCE=10V 60 40 80 -25°C Collector Current, IC ­ mA -25°C 25°C 80 25°C 100 Ta=75°C Collector Current, IC ­ mA 20 120 2SA1380 2SA1380 VCE=10V 100 60 40 20 20 0 10 Collector-to-Emitter Voltage, VCE ­ V ITR03326 ITR03326 IC - VBE 120 IB=0 0 Ta=75°C 0 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE ­ V 1.0 ITR03328 ITR03328 0 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE ­ V 1.0 ITR03329 ITR03329 No.1425-2/5 2SA1380/2SC3502 2SA1380/2SC3502 hFE - IC 1000 7 2SC3502 2SC3502 VCE=10V 3 5 Ta=75°C 2 3 DC Current Gain, hFE DC Current Gain, hFE hFE - IC 5 2SA1380 2SA1380 VCE=10V Ta=75°C 25°C 2 -25°C 100 7 5 25°C 100 -25°C 7 5 3 3 2 2 5 7 1.0 2 3 5 10 2 3 5 Collector Current, IC ­ mA 2SA1380 2SA1380 VCE=-30V 3 10 7 100 2 ITR03330 ITR03330 fT - IC 5 Gain-Bandwidth Product, fT ­ MHz 7 2 100 7 5 3 2 10 5 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC ­ mA 7 100 2 ITR03331 ITR03331 fT - IC 1000 Gain-Bandwidth Product, fT ­ MHz 10 2SC3502 2SC3502 VCE=30V 7 5 3 2 100 7 5 3 2 7 5 5 7 -1.0 2 3 5 7 -10 2 3 Collector Current, IC ­ mA 5 7 -100 10 2 Cob - VCB 2 5 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC ­ mA ITR03332 ITR03332 Cob - VCB 2 2SC3502 2SC3502 f=1MHz Output Capacitance, Cob ­ pF Output Capacitance, Cob ­ pF 2SA1380 2SA1380 f=1MHz 10 7 5 3 2 1.0 5 7 -1.0 2 3 7 5 3 2 1.0 5 Cre - VCB 2SA1380 2SA1380 f=1MHz 10 7 5 3 2 1.0 7 5 7 -1.0 2 3 5 7 2 3 5 7 -100 2 -10 Collector-to-Base Voltage, VCB - V ITR03336 ITR03336 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 ITR03335 ITR03335 Collector-to-Base Voltage, VCB - V Cre - VCB 2 Reverse Transfer Capacitance, Cre ­ pF Reverse Transfer Capacitance, Cre ­ pF 5 7 2 3 5 7 -100 2 -10 Collector-to-Base Voltage, VCB - V ITR03334 ITR03334 2 5 10 7 7 5 7 100 2 ITR03333 ITR03333 2SC3502 2SC3502 f=1MHz 10 7 5 3 2 1.0 7 5 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 Collector-to-Base Voltage, VCB - V ITR03337 ITR03337 No.1425-3/5 2SA1380/2SC3502 2SA1380/2SC3502 VCE(sat) - IC 3 2SC3502 2SC3502 IC / IB=10 7 Collector-to-Emitter Saturation Voltage, VCE (sat) ­ V Collector-to-Emitter Saturation Voltage, VCE (sat) ­ V 2 VCE(sat) - IC 1.0 2SA1380 2SA1380 IC / IB=10 -1.0 7 5 3 5 3 2 0.1 2 -0.1 7 5 7 5 5 7 2 2 3 -10 Collector Current, IC ­ mA -1.0 3 7 5 5 Base-to-Emitter Saturation Voltage, VBE (sat) ­ V 2 -1.0 7 5 5 7 -100 ICP=­200mA Collector Current, IC ­ mA n tio 3 (T c (T =25 a= ° 25 C) °C ) n 2 -10 2 1.0 7 5 7 2 1.0 3 5 7 7 2 10 3 5 7 100 ITR03341 ITR03341 ASO 2SC3502 2SC3502 ICP=200mA IC=100mA 100 7 DC 5 DC op era op 1 10 ms m s era tio (T n c= 25 (Ta °C =2 ) 5° C) tio 3 n 2 10 7 5 5 3 3 2 5 7 2 2 5 3 7 -100 -10 Collector-to-Emitter Voltage, VCE ­ V 3 2 5 Collector Dissipation, PC ­ W 0.8 he at sin k 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta ­ °C 140 160 ITR03344 ITR03344 2 10 5 3 7 2 100 3 ITR03343 ITR03343 PC - Tc 6 1.2 1.0 7 Collector-to-Emitter Voltage, VCE ­ V 2SA1380 2SA1380 / 2SC3502 2SC3502 No 5 ITR03342 ITR03342 PC - Ta 1.4 Collector Dissipation, PC ­ W 5 s tio era 3 2 era 7 100 ITR03339 ITR03339 2SC3502 2SC3502 IC / IB=10 3 op op 5 0µ DC 5 3 50 7 DC 2 10 Collector Current, IC ­ mA 2SA1380 2SA1380 IC=­100mA -100 7 5 3 2 s 0µ 50 s 1m ms 10 2 5 VBE(sat) - IC ITR03340 ITR03340 ASO 3 Collector Current, IC ­ mA 5 7 -10 3 2 3 Collector Current, IC ­ mA 2 3 7 3 -1.0 2 1.0 10 5 7 7 Collector Current, IC ­ mA 2SA1380 2SA1380 IC / IB=10 5 5 ITR03338 ITR03338 7 3 3 2 -100 VBE(sat) - IC -10 Base-to-Emitter Saturation Voltage, VBE (sat) ­ V 7 2SA1380 2SA1380 / 2SC3502 2SC3502 5 4 3 2 1 0 0 20 40 60 80 100 120 Case Temperature, Tc ­ °C 140 160 ITR03345 ITR03345 No.1425-4/5 2SA1380/2SC3502 2SA1380/2SC3502 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2002. Specifications and information herein are subject to change without notice. PS No.1425-5/5