ENN1413D 2SA1371/2SC3468 2006B VCEO300V 2SA1371 92502AS /71598HA

PNP/NPN Epitaxial Planar Silicon Transistors 2SA1371/2SC3468 High-Definition CRT Display, Video Output Applications Use Package

Ordering number:ENN1413D ENN1413D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1371/2SC3468 2SA1371/2SC3468 High-Definition CRT Display, Video Output Applications Use Package Dimensions · Color TV chroma output and high breakdown voltage driver. unit:mm 2006B 2006B [2SA1371/2SC3468 2SA1371/2SC3468] Features 6.0 5.0 4.7 8.5 · High breakdown votage : VCEO300V VCEO300V. · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP). · Adoption of MBIT process. 14.0 6.0 3.0 0.5 0.6 0.5 0.5 1 2 3 1 : Emitter 2 : Collector 3 : Base SANYO :MP ( ) : 2SA1371 2SA1371 Specifications 1.45 1.45 Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()300 V Collector-to-Emitter Voltage VCEO VEBO ()300 V IC ()100 mA Collector Current (Pulse) ICP ()200 mA Collector Dissipation 1.0 W Junction Temperature PC Tj 150 °C Storage Temperature Tstg 55 to +150 °C Emitter-to-Base Voltage Collector Current ()5 V Electrical Characteristics at Ta = 25°C Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain hFE fT Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Conditions Ratings min typ VCB=()200V, IE=0 VEB=()4V, IC=0 VCE=()10V, IC=()10mA 40* * : The 2SA1371/2SC3468 2SA1371/2SC3468 are classified by 10mA hFE as follows : C D E 40 to 80 60 to 120 100 to 200 µA 320* 150 MHz ()0.6 V ()1.0 V Continued on next page. F hFE µA ()0.1 IC=()20mA, IB=()2mA IC=()20mA, IB=()2mA Rank Unit ()0.1 VCE=()30V, IC=()10mA VCE(sat) VBE(sat) max 160 to 320 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92502AS 92502AS (KT)/71598HA /71598HA (KT)/3237KI/3135KI/1114KI /3237KI/3135KI/1114KI, MT No.1413-1/5 2SA1371/2SC3468 2SA1371/2SC3468 Continued from preceding page. Parameter Symbol Collector-to-Base Breakdown Voltage Ratings Conditions Collector-to-Emitter Breakdown Voltage V(BR)CBO IC=()10µA, IE=0 V(BR)CEO IC=()1mA, RBE= Emitter-to-Base Breakdown Votage V(BR)EBO min Output Capacitance Cob Reverse Transfer Capacitance Cre 2SA1371 2SA1371 -40µA -6 -4 -20µA -2 -1 IB=0 -2 -3 -4 -5 -6 -7 -8 -9 -10 Collector-to-Emitter Voltage, VCE V ITR03305 ITR03305 16 100µA 14 80µA 12 60µA 10 8 40µA 6 4 20µA IB=0 0 1 2 3 4 -8 -50µA -40µA -30µA -4 -20µA -3 -10µA -2 7 8 9 -1 10 ITR03306 ITR03306 60µA 8 -7 2SC3468 2SC3468 9 Collector Current, IC mA -60µA -5 6 IC - VCE 10 2SA1371 2SA1371 -6 5 Collector-to-Emitter Voltage, VCE V -9 Collector Current, IC mA IC - VCE 2SC3468 2SC3468 120µA 0 IC - VCE -10 50µA 7 40µA 6 30µA 5 4 20µA 3 2 10µA 1 IB=0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 Collector-to-Emitter Voltage, VCE V ITR03307 ITR03307 0 hFE - IC 1000 0 25°C -25°C 100 20 30 5 50 60 70 80 90 100 ITR03308 ITR03308 hFE - IC 2SC3468 2SC3468 VCE=10V 5 3 Ta=75°C 2 25°C 100 7 40 7 DC Current Gain, hFE Ta=75°C 2 10 1000 5 3 IB=0 0 Collector-to-Emitter Voltage, VCE V 2SA1371 2SA1371 VCE=-10V 7 DC Current Gain, hFE pF 2 0 0 0 pF (2.3) 18 -8 pF 1.8 20 -60µA pF (3.1) VCB=()30V, f=1MHz -80µA -10 V 2.6 Collector Current, IC mA Collector Current, IC mA ()5 VCB=()30V, f=1MHz -100µA -12 V IE=()10µA, IC=0 -16 -14 V ()300 -140µA -120µA -18 Unit max ()300 IC - VCE -20 typ -25°C 7 5 3 3 2 2 10 5 7 -1.0 2 5 7 -10 2 5 3 3 Collector Current, IC mA 7 -100 2 ITR03309 ITR03309 10 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC mA 5 7 2 100 ITR03310 ITR03310 No.1413-2/5 2SA1371/2SC3468 2SA1371/2SC3468 2SA1371 2SA1371 VCE=-30V Gain-Bandwidth Product, fT MHz 7 5 3 2 100 5 3 2 5 7 2 -1.0 3 2 3 5 -10 Collector Current, IC mA 5 7 -100 5 3 2 5 7 1.0 2 3 5 7 10 2 3 5 Output Capacitance, Cob pF 3 2 1.0 7 100 2 ITR03312 ITR03312 Cob - VCB 2SC3468 2SC3468 f=1MHz 2 5 10 7 5 3 2 1.0 7 5 7 -1.0 2 3 5 5 2 3 5 7 -100 2 -10 Collector-to-Base Voltage, VCB - V ITR03313 ITR03313 7 Reverse Transfer Capacitance, Cre pF 10 7 5 3 2 1.0 7 5 7 -1.0 Collector-to-Emitter Saturation Voltage, VCE (sat) V -1.0 7 5 3 2 -0.1 7 -1.0 2 5 2 3 5 -10 Collector Current, IC mA 3 7 7 -100 2 3 5 2 ITR03317 ITR03317 7 100 2 ITR03314 ITR03314 2SC3468 2SC3468 f=1MHz 10 7 5 3 2 1.0 7 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 ITR03316 ITR03316 VCE(sat) - IC 2SC3468 2SC3468 IC / IB=10 5 2 7 10 7 3 5 7 Cre - VCB 10 2SA1371 2SA1371 IC / IB=10 5 5 Collector-to-Base Voltage, VCB - V VCE(sat) - IC 7 3 2 5 2 3 5 7 -10 2 3 5 7 -100 2 Collector-to-Base Voltage, VCB - V ITR03315 ITR03315 -10 2 3 2SA1371 2SA1371 f=1MHz 2 5 7 1.0 Collector-to-Base Voltage, VCB - V Cre - VCB 3 Reverse Transfer Capacitance, Cre pF 7 Collector Current, IC mA 7 Collector-to-Emitter Saturation Voltage, VCE (sat) V 2 3 7 5 3 ITR03311 ITR03311 10 5 5 10 2 2SA1371 2SA1371 f=1MHz 2 Output Capacitance, Cob pF 7 Cob - VCB 3 5 2SC3468 2SC3468 VCE=30V 7 100 7 10 fT - IC 1000 Gain-Bandwidth Product, fT MHz fT - IC 1000 3 2 1.0 7 5 3 2 0.1 7 5 3 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC mA 5 7 100 2 ITR03318 ITR03318 No.1413-3/5 2SA1371/2SC3468 2SA1371/2SC3468 VBE(sat) - IC -10 2SA1371 2SA1371 IC / IB=10 5 3 2 -1.0 7 5 120 2 5 7 -10 3 2 3 Collector Current, IC mA 5 7 3 2 1.0 7 5 3 2 -100 5 3 5 7 10 2 3 5 7 100 2 ITR03320 ITR03320 ASO 3 ICP=200mA 2SA1371 2SA1371 / 2SC3468 2SC3468 2 IC=100mA -25°C 25°C 100 60 40 7 5 DC 3 op era tio 2 n 10 7 5 20 3 0 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE V 1.0 ITR03321 ITR03321 2 (For PNP, minus sign is omitted.) 5 7 10 2 3 5 7 100 2 Collector-to-Emitter Voltage, VCE V 3 5 ITR03322 ITR03322 PC - Ta 1.2 Collector Dissipation, PC W 2 Collector Current, IC mA IC - VBE 80 7 1.0 ITR03319 ITR03319 2SA1371 2SA1371 / 2SC3468 2SC3468 VCE=10V (For PNP, minus sign is omitted.) Ta=75°C Collector Current, IC mA -1.0 5 s 0µ 50 s 1m ms 10 100 7 Collector Current, IC mA 5 2SC3468 2SC3468 IC / IB=10 7 Base-to-Emitter Saturation Voltage, VBE (sat) V Base-to-Emitter Saturation Voltage, VBE (sat) V 7 3 VBE(sat) - IC 10 2SA1371 2SA1371 / 2SC3468 2SC3468 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta °C 140 160 ITR03323 ITR03323 No.1413-4/5 2SA1371/2SC3468 2SA1371/2SC3468 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2002. Specifications and information herein are subject to change without notice. PS No.1413-5/5