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Part : 2SA1298-O(F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 1,150 Best Price : $0.9270 Price Each : $1.10
Part : 2SA1298-Y(TE85L,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 4,000 Best Price : $0.9090 Price Each : $1.10
Part : 2SA1298-Y,LF Supplier : Toshiba Manufacturer : Chip1Stop Stock : 2,900 Best Price : $0.0821 Price Each : $0.2850
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2SA1298 Datasheet

Part Manufacturer Description PDF Type
2SA1298 Kexin Silicon PNP Epitaxial Original
2SA1298 TY Semiconductor Silicon PNP Epitaxial - SOT-23 Original
2SA1298 N/A Transistor Shortform Datasheet & Cross References Scan
2SA1298 N/A Japanese Transistor Cross References (2S) Scan
2SA1298 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SA1298 N/A The Transistor Manual (Japanese) 1993 Scan
2SA1298 N/A Transistor Substitution Data Book 1993 Scan
2SA1298 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SA1298 Toshiba TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER, SWITCHING APPLICATIONS) Scan
2SA1298 Toshiba PNP transistor Scan
2SA1298 Toshiba Super Mini Package (TO-236 / SOT-23) Transistors Scan
2SA1298-O N/A Transistor Shortform Datasheet & Cross References Scan
2SA1298O Toshiba Silicon PNP Epitaxial Transistor Scan
2SA1298-Y N/A Transistor Shortform Datasheet & Cross References Scan
2SA1298Y Toshiba Silicon PNP Epitaxial Transistor Scan
2SA1298-Y(TE85L,F) Toshiba Transistors (BJT) - Single, Discrete Semiconductor Products, TRAN PNP -25V -0.8A S-MINI Original

2SA1298

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1298 Low Frequency Power Amplifier Application Power Switching Applications · High DC current gain: hFE = 100~320 · Low saturation voltage: VCE (sat) = -0.4 V (max) · Suitable for driver stage of small motor · , 2003-03-27 2SA1298 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition , : 100~200, Y: 160~320 2 2003-03-27 2SA1298 3 2003-03-27 2SA1298 RESTRICTIONS ON Toshiba
Original
2SC3265 SC-59
Abstract: 2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1298 Low Frequency Power Amplifier Application Power Switching Applications · High DC current gain: hFE = 100~320 · Low saturation voltage: VCE (sat) = -0.4 V (max) · Suitable for driver stage of small motor · , 2007-11-01 2SA1298 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition , 2007-11-01 2SA1298 3 2007-11-01 2SA1298 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL Toshiba
Original
Abstract: TO SH IBA TOSHIBA TRANSISTOR 2SA1298 LOW FREQUENCY POWER AMPLIFIER APPLICATION POWER SWITCHING APPLICATIONS 2SA1298 - U U U I I 1 Ä , ± ¿3 - - ¿ r U I I l - t t J C A A _ A T _ _ n n _ A \ SILICON PNP EPITAXIAL (PCT PROCESS) Unit in mm + 0.5 2 .5 -0 .3 4- High DC , io 5 - Type Name hpE Rank 1 2001 05-31 - TO SH IBA 2SA1298 ELECTRICAL , tr ts NJ O 0 1 0 un 1 uj 2SA1298 TO SH IBA 2SA1298 RESTRICTIONS ON PRODUCT USE -
OCR Scan
A1298 marking HB
Abstract: 2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1298 Low Frequency Power Amplifier Application Power Switching Applications · High DC current gain: hFE = 100~320 · Low saturation voltage: VCE (sat) = -0.4 V (max) · Suitable for driver stage of small motor · , Marking 1 2007-11-01 2SA1298 Electrical Characteristics (Ta = 25°C) Characteristics Symbol , : 160~320 2 2007-11-01 2SA1298 3 2007-11-01 2SA1298 RESTRICTIONS ON PRODUCT USE · Toshiba
Original
Abstract: 2SA1298 PNP (PCT) 2SA1298 : mm · : hFE = 100~320 · : VCE (sat) = -0.4 V () (IC = -500 mA, IB = -20 mA) · · 2SC3265 (Ta = 25 , () (//) (/) () () 1 2007-11-01 2SA1298 (Ta = 25 , : 100~200, Y: 160~320 hFE IO 2 2007-11-01 2SA1298 IC ­ VCE hFE ­ IC 1000 , 2007-11-01 2SA1298 · · · · "" · · · -
Original
Abstract: 2SA1298 -0.8A , -35V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Low Frequency Power Amplifier Application Power Switching Applications A L 3 3 C B Top View CLASSIFICATION OF hFE (1) 1 Product-Rank 2SA1298-O Range 100~200 IO IY 2 160~320 Marking 1 2SA1298-Y K E 2 D F REF. PACKAGE INFORMATION Package MPQ 3K A SeCoS
Original
SOT-23-hg MARKING IY SOT
Abstract: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1298-O 2SA1298-Y Features · Power switching application x Surface Mount SOT-23 Package x Low frequency power amplifier application x Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1 PNP General Purpose Amplifier Unit V V V A Maximum Ratings , 3 2009/01/21 MCC 2SA1298 TM Micro Commercial Components www.mccsemi.com Revision Micro Commercial Components
Original
Abstract: TOSHIBA TOSHIBA TRANSISTOR 2SA1298 LOW FREQUENCY PO W ER AM PLIFIER APPLICATION PO W ER SWITCHING APPLICATIONS 2SA1298 SILICON PNP EPITAXIAL (PCT PROCESS) Unit in mm 2.5 + - 0.5 0.3 0.25 0.15 · · · High DC Current Gain : hpE = 100~320 Low Saturation Voltage VCE (sat)" -U.4V , a n g e w ith o u t notice. 1997 04-10 1/3 - TOSHIBA 2SA1298 ELECTRICAL , pF 13 - 1997 04-10 2/3 - TOSHIBA 2SA1298 IC - VCE hFE - IC COLLECTOR CURRENT -
OCR Scan
Abstract: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1298-O 2SA1298-Y Features · · · · · Power switching application Low frequency power amplifier application Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Symbol V CEO V CBO V , 3 2011/01/01 MCC 2SA1298 TM Micro Commercial Components www.mccsemi.com Revision Micro Commercial Components
Original
Abstract: 2SA1298 SILICON PNP EPITAXIAL TYPE LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATIONS. FEATURES: . High DC Current Gain : hpE=100~-320 . Low Saturation Voltage : VcE(sat)=-0-4V(Max.) (Ic=-500mA, lB=-20mA) . Suitable for Driver Stage of Small Motor . Complementary to 2SC3265 . Small Package Unit in mm +Û5 2.5 - a 3 + 0125 1.5-ai 5 EE- dd +1 £E MAXIMUM RATINGS (Ta , : 160-320 Marking Type Name 172 2SA1298 Ic - V c e hpE ~ IC COLLECTOR EM ITT ER -
OCR Scan
Abstract: 2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1298 Low Frequency Power Amplifier Application Power Switching Applications â'¢ High DC current gain: hFE = 100~320 â'¢ Low saturation voltage: VCE (sat) = â'0.4 V (max) â'¢ Suitable for driver stage of small motor , temperature range TO-236MOD Marking 1 2003-03-27 2SA1298 Electrical Characteristics (Ta = 25Â , ) classification Cob O: 100~200, Y: 160~320 2 2003-03-27 2SA1298 3 2003-03-27 2SA1298 Toshiba
Original
Abstract: TOSHIBA 2SA1298 2 S A 1 298 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL (PCT PROCESS) Unit in mm LOW FREQUENCY POWER AMPLIFIER APPLICATION POWER SWITCHING APPLICATIONS + 0.5 High DC Current Gain : hpg = 100~320 Low Saturation Voltage : V qe (sat) = â'"0-4 V (Max.) (1(2 = -5 0 0 , 1/3 TO SHIBA 2SA1298 = 25°C) SYMBOL TEST CONDITION ICBO VCB = -3 0 V, IE = 0 !e BO Ve , tJ* H O » 2SA1298 UJ I » 03 CO i O 00 I M O I O F M g H H -
OCR Scan
961001EAA2
Abstract: 2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1298 Low Frequency Power Amplifier Application Power Switching Applications â'¢ High DC current gain: hFE = 100 to 320 â'¢ Low saturation voltage: VCE (sat) = â'0.4 V (max) â'¢ Suitable for driver stage of small motor , 2014-03-01 2SA1298 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition , 320 2 2014-03-01 2SA1298 3 2014-03-01 2SA1298 RESTRICTIONS ON PRODUCT USE â Toshiba
Original
Abstract: MCC 2SA1298-O 2SA1298-Y #1;#2;#3;#4;#5;#6;#7;#5;#8;#8; #4;#3;#2; #11;#6;#7;omponents 20736 Marilla Street Chatsworth #7;#24;#6;#25;#15;#26;#15;#15; #27;#21;#5;#28; #29;#6;#30;#31;#15;#31; #6;!#16;#15;"##25;#26;#26; $ %#29;#6; #6; #6; #30;#31;#15;#31; #6;!#16;#15;"##25;#26;#25; TM Micro Commercial Components Features â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ Halogen free available upon request by adding suffix "-HF" Power switching application Low frequency power amplifier application Epoxy meets UL 94 V-0 flammability rating , 201 3 /01 /0 1 MCC TM 2SA1298 Micro Commercial Components w w w.m c c se m i.c om -
Original
Abstract: TOSHIBA TOSHIBA TRANSISTOR 2SA1298 LO W FREQUENCY PO W ER AM PLIFIER APPLICATION PO W ER SWITCHING APPLICATIONS 2SA1298 SILICON PNP EPITAXIAL (PCT PROCESS) Unit in mm + 0.5 High DC Current Gain : hjpg = 100~320 Low Saturation Voltage : (sat) = -0.4 V (Max.) (Iq = -500 mA, Ig = -20 mA , change w ith o u t notice. 0 0 1999 08-20 1/3 - TOSHIBA 2SA1298 ELECTRICAL , d I 0 00 1 NJ O Ul UJ VO < ra ts 2SA1298 -
OCR Scan
Abstract: MCC 2SA1298-O 2SA1298-Y #1;#2;#3;#4;#5;#6;#7;#5;#8;#8; #4;#3;#2; #11;#6;#7;omponents 20736 Marilla Street Chatsworth #7;#24;#6;#25;#15;#26;#15;#15; #27;#21;#5;#28; #29;#6;#30;#31;#15;#31; #6;!#16;#15;"##25;#26;#26; $ %#29;#6; #6; #6; #30;#31;#15;#31; #6;!#16;#15;"##25;#26;#25; TM Micro Commercial Components Features â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ Halogen free available upon request by adding suffix "-HF" Power switching application Low frequency power amplifier application Epoxy meets UL 94 V-0 flammability rating , 1 of 3 2013/01/01 MCC 2SA1298 TM Micro Commercial Components www.mccsemi.com Micro Commercial Components
Original
Abstract: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1298-O 2SA1298-Y Features · · · · · Power switching application Low frequency power amplifier application Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Symbol V CEO V CBO V , 3 2011/01/01 MCC 2SA1298 TM Micro Commercial Components www.mccsemi.com Revision Micro Commercial Components
Original
Abstract: ·2SC3429 ·2SC3606 ' 2SA1245 2SC3120 2SC3121 2SC3122 2SC3123 2SC3124 2SC3125 2SC3547A 2SC3547B 2SA1298 , E AB CB AC CE P CC HL AE CH HN HO MN MO MP MAD D C 7 A 3 4 - - - 2SC3265 2SA1298 2SC3324 -
OCR Scan
2SC970 2SC2713 2SA1255 2SC3325 2sc2240 equivalent 2sc1815 equivalent 2sc3112 equivalent 2sa1015 equivalent 2sc2458 equivalent 2sc2120 equivalent 2SA1015 2SC1815 2SC2240 2SC1923 2SC380TM
Abstract: 2SA1298 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)800m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150Ãu I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.320 @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) f(T) Min. (Hz) Transition Freq120M @I(C) (A) (Test Condition) @V(CE) (V) (Test American Microsemiconductor
Original
Abstract: 1 -20 120 400 -2 -0. 1 -0.5 -2 -0. 1 2SA1298 «s LF PA/PS» -30 -25 -0.8 0. 2 -0.1 -30 100 320 -1 , * 2SC3267 (2-4E1A) ECB 2SA1297 120* -5 -0.01 13* 2SC3265 (SC-59(2-3F1*) EBC 2SA1298 200* -6 -0.01 -
OCR Scan
2SA1263N 2SA1264N 2SA1265N 2SA1282 2SA1282A 2SA1283 2SA1309 2SA1307 2sc3180n 2SA1286 2SA1285 2SA1295 2SA1262
Abstract: 2SA1313 2SC2713 2SA1163 2SC3324 2SA1312 2SC5232 2SA1953 2SA1362 2SC3265 2SA1298 2SC4210 2SA1621 , 2SC3324 2SA1953 2SC5232 2SA1298 2SC3265 2SA1621 2SC4210 2SA1620 2SC4209 2SA1255 2SC3138 -
Original
2SA970 2SC1627 2SC5471 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 2SC2458 2SA1048 2SC2459 2SA1049 2SC732TM
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