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2SA1296 Datasheet

Part Manufacturer Description PDF Type
2SA1296 Transys Electronics Plastic-Encapsulated Transistors Original
2SA1296 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SA1296 N/A The Transistor Manual (Japanese) 1993 Scan
2SA1296 N/A Transistor Substitution Data Book 1993 Scan
2SA1296 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SA1296 N/A Transistor Shortform Datasheet & Cross References Scan
2SA1296 N/A Japanese Transistor Cross References (2S) Scan
2SA1296 N/A Cross Reference Datasheet Scan
2SA1296 Toshiba Silicon PNP Epitaxial Type (PCT Process) Transistor Scan
2SA1296 Toshiba TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) Scan
2SA1296 Toshiba TO-92 Transistors Scan
2SA1296 Toshiba PNP transistor Scan
2SA1296-GR Toshiba 2SA1296 - TRANSISTOR 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal Original
2SA1296-GR N/A Transistor Shortform Datasheet & Cross References Scan
2SA1296GR Toshiba Silicon PNP Transistors Scan
2SA1296-GR(F) Toshiba 2SA1296 - Trans GP BJT PNP 20V 2A 3-Pin TO-92 Original
2SA1296-Y Toshiba 2SA1296 - TRANSISTOR 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal Original
2SA1296-Y N/A Transistor Shortform Datasheet & Cross References Scan
2SA1296Y Toshiba Silicon PNP Transistors Scan

2SA1296

Catalog Datasheet MFG & Type PDF Document Tags

2SA1296

Abstract: 2SC3266 2SA1296 PNP (PCT) 2SA1296 : mm · 2SC3266 · : PC = 750 mW (Ta = 25°C) (Ta = 25°C) VCBO -20 V VCEO -20 V VEBO -6 V IC -2 A IB -0.5 A PC 750 , ~400 1 2007-11-01 2SA1296 IC ­ VCE -20 Ta = 25°C -15 -1600 hFE -25 , (V) 2007-11-01 2SA1296 · · · · ""
-
Original
SC-43

2SA1296

Abstract: 2SC3266 TO SH IBA TOSHIBA TRANSISTOR 2SA1296 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 2SA1296 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm . 5.1 MAX. · · Low Saturation Voltage : V qe (sat)" -0-5 (Max.) @Iq = -2A Complementary to 2SC3266. SYMBOL v CBO VCEO Ve b o RATING -2 0 -2 0 -6 -2 0.45 0.55 MAX. 0.45 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC , ca h O < H 03 tr H O < 2SA1296 0 un uj 1 TO SH IBA 2SA1296
-
OCR Scan

2SA1296

Abstract: 2SC3266 2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1296 Power Amplifier Applications Power Switching Applications Unit: mm · Low saturation voltage: VCE (sat) = -0.5 V (max) @IC = -2 A · Complementary to 2SC3266. Absolute Maximum Ratings (Ta = 25°C) Characteristics , capacitance Cob Note: hFE (1) Y: 120~240, GR: 200~400 1 2007-11-01 2SA1296 2 2007-11-01 2SA1296 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates
Toshiba
Original
Abstract: 2SA1296-2* 1996-11-11 TOSHIBA CORPORATION , SEM ICO NDU CTO R TOSHIBA TRANSISTOR. T O SH IB A 2SA1296 DATA SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TECHNICAL (2SA1296) POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 1 , . © 2SA1296 - 1 _ 1996-11-11_ TOSHIBA CORPORATION SEM ICO NDU CTO R T O SH IB A 2SA1296 DATA TECHNICAL (2SA1296) Ic - VCE hFE - IC COLLECTOR CURRENT Ic -
OCR Scan

2SA1296GR

Abstract: 2SA1296 2SA1296 -2 A, -20 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Low Saturation VoltageVCE(sat) High DC Current Gain G 2SA1296-Y 120~240 Range Emitter Collector Base J CLASSIFICATION OF hFE(1) Product-Rank H A D 2SA1296-GR REF. B 200~400 A B C D E F G H J K K E C F Millimeter Min. Max. 4.40 4.70 4.30
SeCoS
Original

2SA1296

Abstract: 2SC3266 2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1296 Power Amplifier Applications Power Switching Applications Unit: mm · Low saturation voltage: VCE (sat) = -0.5 V (max) @IC = -2 A · Complementary to 2SC3266. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO -20 , : 200~400 1 2003-03-24 2SA1296 2 2003-03-24 2SA1296 RESTRICTIONS ON PRODUCT USE
Toshiba
Original

2SA1296

Abstract: 2SC3266 2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1296 Power Amplifier Applications Power Switching Applications Unit: mm · Low saturation voltage: VCE (sat) = -0.5 V (max) @IC = -2 A · Complementary to 2SC3266. Absolute Maximum Ratings (Ta = 25°C) Characteristics , capacitance Cob Note: hFE (1) Y: 120~240, GR: 200~400 1 2007-11-01 2SA1296 2 2007-11-01 2SA1296 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The information contained herein is
Toshiba
Original

2SA1296

Abstract: 2SA1296 2SA1296 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.75 W (Tamb=25) 2. COLLECTOR Collector current ICM : -2 A Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-0.1mA, IE
WEJ Electronic
Original

2SA12

Abstract: 2SA1296 TOSHIBA 2SA1296 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2 SA12 9 6 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS â'¢ Low Saturation Voltage : Vqe (sat)= (Max.) @Iq= -2A â'¢ Complementary to 2SC3266. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation , 2SA1296 IC - VCE hFE - IC 9 n COMMON EMITTER Ta = 25°C -15^ -10.
-
OCR Scan
2SA12 SA12 961001EAA2

2SA1296

Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA1296 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.75 W (Tamb=25) 2. COLLECTOR Collector current : -2 A ICM Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP
Jiangsu Changjiang Electronics Technology
Original

2SB873

Abstract: 2SB1010 - 57 - fi « Type No. tt S Manuf. = m SANYO * 2 TOSHIBA B a NEC B AZ HITACHI » ± a FUJITSU te T MATSUSHITA H m MITSUBISHI â¡ â'" A ROHM 2SB 922 ^ % 2SA122à 2SB 922L = 2SA1452 2S8 525 / te T 2SB953 2SB 925A fâ T 2SB1019 2SA1645 2SB953A 2SB 926 J = % 2SA1296 2SB976 2SA1282A 2SB1010 2S6 927. = m 2SA1020 2SB873 2SA1282A 2SB1010 2SB 930 te t 2SB1270 2SB 330A te t ZSB1270 2SB 93! te t 2SB1270 2SB 932 te t 2SB1270 2SB 933 te t
-
OCR Scan
2SB1017 2SB1095 2SB1335 948a B 947A 2S897 939-940 2SB1103 2SB 2SB 2SB1271 2SB1267 2SB1266 2SB1101 2SB1Z68 2SB1301
Abstract: 2SA1296 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain. @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) f(T) Min. (Hz) Transition Freq120M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) C American Microsemiconductor
Original

2SC3266

Abstract: 2SA1296 2SC3266 NPN (PCT) 2SC3266 : mm · 2SA1296 · : PC = 750 mW (Ta = 25°C) (Ta = 25°C) VCBO 20 V VCEO 20 V VEBO 6 V IC 2 A IB 0.5 A PC 750 mW JEDEC TO-92 JEITA SC-43 2-5F1B Tj 150 °C Tstg -55~150 °C : 0.21 g () : (//) (/) () () (Ta = 25
-
Original
Abstract: 2SA1296 T O SH IB A 2 S A 1 296 TO SH IB A TRA N SISTO R PO W ER A M PLIFIER A P P LICA TIO N S SILICO N PNP E P ITA X IA L T Y P E (PCT PROCESS) U n it in m m PO W ER SW ITCHIN G A PPLICA TIO N S r 0 .4 5 0 55 (V lA X , ! I 4.7 M A X . Low Saturation Voltage : V@e (sat)= -0-5 (Max.) @ Ic= -2 A Complementary to 2SC3266. 1 â'¢ â'¢ 1 , 5.1 M A X T~ sl , n d b o o k . 1996-11-11 1/2 2SA1296 T O SH IB A IC - VCE hFE - IC 1000 500 -
OCR Scan
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO â'" 92 2SA1296 TRANSISTOR (PNP) 1. EMITTER 2. COLLECTOR FEATURES Low Saturation Voltage: VCE (sat) High DC Current Gain 3. BASE MAXIMUM RATINGS (Ta=25â"ƒ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current -2 A PC Jiangsu Changjiang Electronics Technology
Original

2SC5471

Abstract: 2SC5853 2000.0 0.5 2SA1296 Transistor for Low-Frequency Small-Signal Amplification PNP -20.0 -2000.0 -0.5 , current 3 2SA1150 High current 3 2SC2710 High current 3 2SA1296 High current 3 2SC3266 High
-
Original
2SA970 2SC1627 2SC5471 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 2SC1815 2SA1015 2SC2458 2SA1048 2SC2240

2SA1296

Abstract: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA1296 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.75 W (Tamb=25) 2. COLLECTOR Collector current : -2 A ICM Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP
Transys Electronics
Original

2sc286

Abstract: 2SC2754 2SC3266 2SA1296 20 2000 750 120-700/400 2 100 0.5 2000 100 120 2 500 - - - - - 2SC3279 2SA1300 10 '2000
-
OCR Scan
2SC2868 2SA1158 2SC732TM 2SC18150 2SC3329 2SA1316 2sc286 2SC2754 2SC1815 2SA1015 2SA1015 GR 2SA1164 2SA1O150

2SB1013

Abstract: 2S897 2SB 1300 S » 2SB1395 2SA1296 2SB976 2SB 1301 s a 2SB1124 2SA1213 2SB1073 2SB1308 2SB 1302
-
OCR Scan
2SB679 2SB1105 2SB1226 2SB1402 2SB1131 2SA1431 2SB1013 2SB1315 2SB1306 2SB747 2sb631 hitachi 2SB884 2SB949

2S897

Abstract: 2SA1178 › 2SB 1228 -^' 2SB1020 2SB1431 2SB1195 2SB1344 2SB 1229 â'"' Â¥ 2SA1296 2SB976 2SB 1 230
-
OCR Scan
2SA1359 2SA1096 2SA1622 2SA1586 2SA1628 2SA1603 2SA1178 2SA1225 2SA1371 2SA1243 2SA1647 2SB930A 2SB986 2SB1065

2SA1296

Abstract: 2SC3266 TOSHIBA 2SC3266 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 S C 3 2 6 6 POWER AMPLIFER APPLICATIONS POWER SWITCHING APPLICATIONS â'¢ Low Saturation Voltage : VqE (sat) = °-5V (Max.) (Ie = 2A) â'¢ Complementary to 2SA1296 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage vCBO 20 V Collector-Emitter Voltage vCEO 20 V Emitter-Base Voltage Vebo 6 V Collector Current ic 2 A Base Current IB 0.5 A Collector Power Dissipation PC 750 mW
-
OCR Scan
Abstract: - High Current 2SC3266 2SA1296 20 2000 750 120-700/400 2 100 0.5 -
OCR Scan
2SC2888 2SA950 2SC2878 2SC3112 2SC1923 2SC380TM
Showing first 20 results.