NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SA1295 | Allegro MicroSystems, Inc. | TRANS GP BJT PNP 230V 14A 3MT-200 |
1 pages, |
Original |  |
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| 2SA1295 | Micro Commercial Components | TRANS GP BJT PNP 230V 17A 3MT-200 |
1 pages, |
Original | |
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| 2SA1295 | Mospec Semiconductor | POWER TRANSISTORS(17A,230V,200W) |
3 pages, |
Scan | |
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| 2SA1295 | Mospec Semiconductor | High-Power PNP Silicon Power Transistor |
3 pages, |
Scan | |
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| 2SA1295 | N/A | Shortform Data and Cross References (Misc Datasheets) |
1 pages, |
Scan | |
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| 2SA1295 | N/A | Shortform Data and Cross References (Misc Datasheets) |
1 pages, |
Scan | |
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| 2SA1295 | N/A | The Transistor Manual (Japanese) 1993 |
2 pages, |
Scan | |
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| 2SA1295 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
Scan | |
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| 2SA1295 | Sanken Electric | Power Transistor Selection Guide |
13 pages, |
Original | |
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| 2SA1295 | Various Russian Datasheets | Transistor |
8 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SavantIC Semiconductor Product Specification 2SA1295 Silicon PNP Power Transistors DESCRIPTION ·With MT-200 MT-200 package ·Complement to type 2SC3264 2SC3264 APPLICATIONS ·Audio and general purpose , Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SA1295 , Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SA1295 SavantIC Semiconductor Product Specification 2SA1295 Silicon PNP Power Transistors 4 ... | Original |
4 pages, |
general purpose power transistors 2SC3264 2SA1295 2SA1295 2SC3264 2SA1295 abstract |
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| Abstract: JMnic Product Specification 2SA1295 Silicon PNP Power Transistors DESCRIPTION With MT-200 MT-200 package Complement to type 2SC3264 2SC3264 APPLICATIONS Audio and general purpose applications PINNING , temperature -55~150 TC=25 JMnic Product Specification 2SA1295 Silicon PNP Power , Product Specification 2SA1295 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 JMnic Product Specification 2SA1295 Silicon PNP Power Transistors 4 ... | Original |
4 pages, |
2SC3264 2SA1295 2SA1295 abstract |
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| Abstract: AOK AOK Semiconductor Product Spec ification Silicon PNP Power Transistors 2SA1295 DESCRIPTION • With MT-200 MT-200 package • Complement to type 2SC3264 2SC3264 APPLICATIONS • Audio and general purpose applications , Semiconductor Product Specification Silicon PNP Power Transistors 2SA1295 CHARACTERISTICS Tj=25"C unless , Transistors 2SA1295 PACKAGE OUTLINE E-mail: aoksemic@msn.com 3/4 36.4 ± 0.3 6.0 ± 0.2 2^*3.2 ± o.i CO Ã- +l Cvj , Product Spec ification Silicon PNP Power Transistors 2SA1295 ColUctor-Emltlar Voilage Vet (V) Fi ... | OCR Scan |
4 pages, |
2SC3264 2SA1295 MT-200 2SA1295 abstract |
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| Abstract: \ \ S \ 25 50 75 100 Tc ,TEMPERATURE(°C) 125 150 PNP 2SA1295 17 AMPERE POWER TRANASISTOR 230 VOLTS 200 WATTS Characteristic Symbol 2SA1295 Unit Collector-Emitter Voltage VcEO 230 V , 0.70 2SA1295 PNP ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted ) Characteristic , Fall Time tf 0.30(typ) us (1) Pulse Test: Pulse Width =300 us, Duty Cycle ^ 2.0% 2SA1295 PNP ... | OCR Scan |
3 pages, |
transistor 2sa1295 2SC3264 150W TRANSISTOR AUDIO AMPLIFIER 2SA1295 2SC3264 abstract |
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| Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1295 DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -230V -230V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3264 2SC3264 APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Emitter Voltage VEBO Emitter-Base , Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1295 ELECTRICAL ... | Original |
2 pages, |
2SA1295 2SC3264 2sa1295 2SC3264 transistor 2sa1295 2SA1295 2SA1295 abstract |
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| Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1295 DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -230V -230V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3264 2SC3264 APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 , INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1295 ELECTRICAL CHARACTERISTICS TC=25 ... | Original |
2 pages, |
2SA1295 2SC3264 2SA1295 abstract |
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| Abstract: 2SA1295 LAPT Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264 2SC3264) sAbsolute maximum ratings Symbol sElectrical Characteristics (Ta=25癈) External Dimensions MT-200 MT-200 (Ta=25癈) Unit �0 Symbol V Conditions 2SA1295 Unit ICBO 2SA1295 VCBO Application : Audio and General VCB=�0V �0max 礎 36.4�3 24.4�2 VEB=� �0max 礎 IC=�mA �0min V VCEO �0 V IEBO VEBO � V V(BR)CEO IC � A hFE VCE=�, IC=� ... | Original |
1 pages, |
2SC3264 2SA1295 2SA1295 abstract |
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| Abstract: SavantIC Semiconductor Product Specification 2SC3264 2SC3264 Silicon NPN Power Transistors DESCRIPTION ·With MT-200 MT-200 package ·Complement to type 2SA1295 APPLICATIONS ·Audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200 MT-200) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter ... | Original |
4 pages, |
2SA1295 2SC3264 2SC3264 abstract |
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| Abstract: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1295 Features · · PNP Silicon Power Transistors Complement to type 2SC3264 2SC3264 Audio and general applications Maximum Ratings Symbol V CEO V CBO V EBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 230 230 5.0 17 200 -55 to +150 -55 to +150 MT-200 MT-200 Unit ... | Original |
1 pages, |
2SC3264 2SC3264 abstract |
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| Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3264 2SC3264 DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= 230V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1295 APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w 230 V 230 V 5 V IC Collector Current-Continuous 17 A IB ... | Original |
2 pages, |
2SC3264 2SA1295 2SC3264 abstract |
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| 2SD2015 2SD2015 2SD2015 2SD2015 2SA1295 www.datasheetarchive.com/files/allegro/sanken/pwr1xtr.htm |
Allegro | 02/10/2001 | 27.91 Kb | HTM | pwr1xtr.htm |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 2SA1295 | N/A | Silicon PNP | |
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| 2SA1295 | N/A | High Power, High Voltage, General Purpose | |
| NTE Electronics Part | Industry Part |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| Part | Similar Part | Notes |