2SA1215 MT-200 2SC2921 -160V - Datasheet Archive

 

Product Specification 2SA1215 Silicon PNP Power Transistors DESCRIPTION With MT-200 package Complement to type 2SC2921

 

JMnic Product Specification 2SA1215 2SA1215 Silicon PNP Power Transistors DESCRIPTION With MT-200 MT-200 package Complement to type 2SC2921 2SC2921 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200 MT-200) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V VCEO Collector-emitter voltage Open base -160 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IB Base current -4 A PC Collector power dissipation 150 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 JMnic Product Specification 2SA1215 2SA1215 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO Collector-emitter breakdown voltage IC=-25mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -2.0 V ICBO Collector cut-off current VCB=-160V -160V; IE=0 -100 A IEBO Emitter cut-off current VEB=-5V; IC=0 -100 A hFE DC current gain IC=-5A ; VCE=-4V Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 400 pF fT Transition frequency IC=-2A ; VCE=-12V 50 MHz 0.25 s 0.85 s 0.20 s -160 UNIT V 50 180 Switching times ton Turn-on time ts Storage time tf Fall time IC=-5A;RL=12 IB1=-IB2=-0.5A VCC=-60V hFE classifications O P Y 50-100 70-140 90-180 2 JMnic Product Specification 2SA1215 2SA1215 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 JMnic Product Specification 2SA1215 2SA1215 Silicon PNP Power Transistors 4