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Part : 2SA1213YTE12LC Supplier : Toshiba Manufacturer : ComSIT Stock : 18,500 Best Price : - Price Each : -
Part : 2SA1213-Y Supplier : Toshiba Manufacturer : Chip One Exchange Stock : 388 Best Price : - Price Each : -
Part : 2SA1213-O(TE12L,CF) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 1,300 Best Price : $1.81 Price Each : $1.81
Part : 2SA1213-Y(TE12L,CF) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 8,600 Best Price : $1.81 Price Each : $1.81
Part : 2SA1213-Y-TP Supplier : Micro Commercial Components Manufacturer : Chip1Stop Stock : 308 Best Price : $0.2763 Price Each : $0.2763
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2SA1213 Datasheet

Part Manufacturer Description PDF Type
2SA1213 Kexin Power Switching Applications Original
2SA1213 Micro Commercial Components TRANS GP BJT PNP 50V 2A 3SOT-89 Original
2SA1213 Toshiba TRANS GP BJT PNP 50V 2A 3(2-5K1A) Original
2SA1213 Transys Electronics Plastic-Encapsulated Transistors Original
2SA1213 TY Semiconductor Power Switching Applications - SOT-89 Original
2SA1213 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2SA1213 N/A Transistor Shortform Datasheet & Cross References Scan
2SA1213 N/A Japanese Transistor Cross References (2S) Scan
2SA1213 N/A Catalog Scans - Shortform Datasheet Scan
2SA1213 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SA1213 N/A The Transistor Manual (Japanese) 1993 Scan
2SA1213 N/A Transistor Substitution Data Book 1993 Scan
2SA1213 N/A The Japanese Transistor Manual 1981 Scan
2SA1213 Toshiba SOT-89 Transistors Scan
2SA1213 Toshiba Silicon PNP transistor for power switching and power amplifier applications Scan
2SA1213 Zetex Semiconductors High Gain Transistors / High Performance Switching Transistors / Darlingtons Scan
2SA1213O Micro Commercial Components TRANS GP BJT PNP 50V 2A 3SOT-89 Original
2SA1213-O Toshiba 2SA1213 - TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal Original
2SA1213O Toshiba TRANS GP BJT PNP 50V 2A 3(2-5K1A) Original
2SA1213OTE12L Toshiba 2SA1213 - TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original
Showing first 20 results.

2SA1213

Catalog Datasheet MFG & Type PDF Document Tags

2SA1213

Abstract: 2SC2873 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier , 2SA1213 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ , 2004-07-07 2SA1213 VCE ­ IC VCE ­ IC -1.6 -1.6 VCE -1.2 -10 IB = -5 mA -20 , IC (mA) 2004-07-07 2SA1213 IC ­ VBE Safe Operating Area -2.0 -3000 Common , 2SA1213 RESTRICTIONS ON PRODUCT USE 030619EAA · The information contained herein is subject to
Toshiba
Original
2SC2873 SC-62

2SA1213

Abstract: 2SC2873 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier , (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SA1213 , 2SA1213 VCE ­ IC VCE ­ IC -1.6 VCE (V) Common emitter Ta = 25°C -1.2 IB = -5 mA -10 , 2SA1213 IC ­ VBE Safe Operating Area -2.0 -3000 Common emitter IC max (pulse)* 10 ms , 100 120 140 160 Ambient temperature Ta (°C) 4 2006-11-09 2SA1213 RESTRICTIONS
Toshiba
Original

2SA1213

Abstract: 2SC2873 TO SH IBA TOSHIBA TRANSISTOR 2SA1213 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 2SA1213 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm 4.6MAX. 1.7MAX. 1.6MAX. 0.4 , 2SA1213 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Collector Cut-off Current Emitter , 05-31 - VCE(sat) - IC VBE(sat) - IC 2001 05-31 - TO SH IBA 2SA1213 le - V b e - , 2SA1213 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the
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OCR Scan

2SA1213

Abstract: 2SC2873 2SA1213 PNP (PCT) 2SA1213 · : mm : VCE (sat) = -0.5 V () (IC = -1 A) · , : (//) ( / ) () () 1 2009-12-21 2SA1213 (Ta = 25 , 2002/95/EC) 2 2009-12-21 2SA1213 VCE ­ IC VCE ­ IC VCE (V) -1.6 Ta = 25 , -3000 (mA) 2009-12-21 2SA1213 IC ­ VBE -2.0 -3000 IC max ()* IC max , 40 60 80 100 Ta 120 140 160 (°C) 4 2009-12-21 2SA1213 ·
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Original

2SA1213

Abstract: 2SC2873 2SA1213 PNP (PCT) 2SA1213 · : mm : VCE (sat) = -0.5 V () (IC = -1 A) · , : (//) ( / ) () () 1 2006-11-07 2SA1213 (Ta = 25 , 2006-11-07 2SA1213 VCE ­ IC VCE ­ IC VCE (V) -1.6 Ta = 25°C -1.2 IB = -5 mA -10 , 2SA1213 IC ­ VBE -2.0 -3000 IC max ()* IC max -1000 () -1.6 10 ms* 1 ms , Ta 120 140 160 (°C) 4 2006-11-07 2SA1213 20070701-JA ·
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Original

2SB1099

Abstract: 1115a - 63 - m s Type No. tt S Maîiuf. H iÂ¥ SANYO S 2 TOSHIBA 0 « NEC s a HITACHI » ± a FUJITSU fâ T MATSUSHITA H S MITSUBISHI â¡ â'" A ROHM 2 SB 1114 -â'¢ S « 2SB1121 2SA1213 2SB1001 2SB956 2SB1188 2SB 1115 â'ž 0 S 2SB1122 2SA1201 2SB1002 2SB766A 2SB1260 2SB 1115A 0 * 2SA1213 2SB1002 2SB766A 2SB1260 2SB 1116, 0 m. 2SB1229 2SA1315 2SB1059 2SB621A 2SA1283 2SB1041 2S8 I1I5A a n , ¥ 2SA1736 2SB1440 2SA1797 2SB 1124 , Â¥ 2SA1213 2SB1572 2SB1446 2SB 1127, Â¥ 2SA1357 2SBU51
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OCR Scan
2SB927 2SB873 2SA1770 2SB1545 2SA1441 2SB1019 2SB1099 1115a 2sB1098 NEC 2SB1459 2SB798 2SA1365 2SB1132

2SA1213

Abstract: pnp hfe 120-240 MCC Micro Commercial Components 2SA1213 TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1213-O 2SA1213-Y PNP Silicon Epitaxial Transistors Features x x x x x Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) Small flat package PC=1.0 to 2.0W(mounted on ceramic substrate) High Speed Switching Time : tstg =1.0µs(typ.) Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Maximum Ratings Symbol VCEO VCBO VEBO IC IB PC TJ TSTG Rating Collector-Emitter
Micro Commercial Components
Original
pnp hfe 120-240 2SA1213Y
Abstract: SMD Type Product specification 2SA1213 Features Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) High Speed Switching Time: tstg = 1.0ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC2873 Absolute Maximum Ratings Ta = 25 Symbol , 1.0 ìs 0.1 4008-318-123 1 of 3 SMD Type Product specification 2SA1213 Test , Product specification 2SA1213 http://www.twtysemi.com sales@twtysemi.com 4008-318-123 3 of TY Semiconductor
Original

2SA1213

Abstract: 2SC2873 TO SH IBA TOSHIBA TRANSISTOR 2SA1213 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 2SA1213 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm 4.6MAX. 1.7MAX. 1.6MAX. 0.4 , r n : 1 2001 10-29 - TO SH IBA 2SA1213 ELECTRICAL CHARACTERISTICS (Ta = 25 , C fO fO H 3 H O fO < o O > O o 2SA1213 NJ V O TO SH IBA 2SA1213 le - V , SH IBA 2SA1213 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to
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OCR Scan

2sa1213

Abstract: SILICON PNP EPITAXIAL TYPE 2SA1213 Unit in m m POWER AMPL I F I E R APPLICATIONS. POWER SWITCHING APPLICATIONS. 1.7 MAX . a4±ao5. p a FEATURES: . Low Saturation Voltage (IC =-1A) : t s t g , ) 163 2SA1213 ELECTRICAL CHARACTERISTICS CHARACTERISTIC Collector Cut-off Current Emitter , ) Classification 0 : 70^140, Y : 120^-240 164 2SA1213 V CE - Ic V CE - IC V CE - IC h , CURRENT J0 (mA) COLLECTOR CURRENT Ic (mA ) 165 2SA1213 1 C - V BE SAFE
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OCR Scan
2SA12X3
Abstract: 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier , failure rate, etc). 1 2006-11-09 2SA1213 Electrical Characteristics (Ta = 25 , )-free package or lead (Pb)-free finish. 2 2006-11-09 2SA1213 VCE ­ IC -1.6 -1.6 Common , 2SA1213 IC ­ VBE -2.0 Common emitter VCE = -2 V -1.6 -3000 Safe Operating Area IC max (pulse)* 1 s , ) 4 2006-11-09 2SA1213 RESTRICTIONS ON PRODUCT USE · The information contained herein is Toshiba
Original
Abstract: TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1213 1< ;a 1 1 1 3 w êêf m m v PO W ER AM PLIFIER APPLICATIONS PO W ER SWITCHING APPLICATIONS 4.6MAX , - 1/4 TOSHIBA 2SA1213 ELECTRICAL CHARACTERISTICS Ta = 25°C) CHARACTERISTIC Collector , 2SA1213 V C E - IC V C E - IC C O LLECTO R C U R R E N T Iç (A) C O LLE C TO , CURRENT IC fmA) COLLECTOR CURRENT IC (mA) 1997 04-10 - 3/4 TOSHIBA 2SA1213 -
OCR Scan

2SA1213

Abstract: 2SC2873 TOSHIBA TOSHIBA TRANSISTOR 2SA1213 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 2SA1213 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) : VCE (sat)= -0.5V (Max.) (IC = -1A) High Speed Switching Time: tstg=1.0/«s(Typ.) P q = 1~2W (Mounted on Ceramic Substrate) Small Flat Package Complementary , /4 TOSHIBA 2SA1213 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Collector , < tr O < O o O > 2SA1213 OJ COLLECTOR POWER DISSIPATION Pq (W) COLLECTOR
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OCR Scan
61001EA

2SA1213

Abstract: 2SC2873 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier , report and estimated failure rate, etc). 1 2009-12-21 2SA1213 Electrical Characteristics (Ta = , electronic equipment. 2 2009-12-21 2SA1213 VCE ­ IC VCE ­ IC -1.6 VCE (V) Common , -1000 -3000 (mA) 2009-12-21 2SA1213 IC ­ VBE Safe Operating Area -2.0 -3000 , 2SA1213 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates
Toshiba
Original

2SA1213

Abstract: SOT-89-D 2SA1213 PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 D Dimensions In Millimeters D1 Symbol A Dimensions In Inches E E1 0.520 0.013 0.020 0.360 0.560 0.014 0.022 0.350 0.440 0.014 0.017 4.400 4.600 , will not be informed individual Page 1 of 3 2SA1213 Elektronische Bauelemente http , will not be informed individual Page 2 of 3 2SA1213 Elektronische Bauelemente http
SeCoS
Original
SOT-89-D transistor marking 2a SILICON PNP POWER TRANSISTOR 500TYP 060TYP

2SA1213

Abstract: 2SC287 Transistors SMD Type Power Switching Applications 2SA1213 Features Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) High Speed Switching Time: tstg = 1.0ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC2873 Absolute Maximum Ratings Ta , Transistors SMD Type 2SA1213 Test Circuit hFE Classification N Marking Rank hFE O 70 Y , Type 2SA1213 www.kexin.com.cn 3 Kexin
Kexin
Original
2SC287 smd ic marking PC smd 1A SMD 20A

b 817

Abstract: B817 2SB1119 2SA1203 2SB1000A 2SB766 2SB1132 2SB 799 b a 2SB1122 2SA1213 2SB766A 2SB1189 2SB 800 b s 2SA1116 2SA1202 2SB767 2SB1189 2SB 801 b m 2SBÃ122 2SA1213 2SB766 2SB1260 2SB 802 b m 2SB1122 2SA1213 2SB766A 2SB1260 2SB 803 ED 2SA1416 2SA1201 2SB 804 b « 2SA1416 2SB1260 2SB 805
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OCR Scan
2SA1703 2SA1705 2SB1044M 2SA1194 2SB1272 2SB755 b 817 B817 toshiba 2SB755 2SB897 2SB909M 2SB1214
Abstract: 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier , Start of commercial production 1980-07 1 2013-11-01 2SA1213 Electrical Characteristics (Ta , in electrical and electronic equipment. 2 2013-11-01 2SA1213 VCE â'" IC VCE â'" IC â , '3000 (mA) 2013-11-01 2SA1213 IC â'" VBE Safe Operating Area â'2.0 â'3000 Common , 160 Ambient temperature Ta (°C) 4 2013-11-01 2SA1213 RESTRICTIONS ON PRODUCT USE â Toshiba
Original

2SA1213

Abstract: 2SC2873 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier , Note 1: Mounted on ceramic substrate (250 mm × 0.8 t) 1 2002-08-19 2SA1213 Electrical , to 240 Marking Type name hFE classification NO 2 2002-08-19 2SA1213 VCE ­ IC , ) 2002-08-19 2SA1213 IC ­ VBE Safe Operating Area -2.0 -3000 Common emitter IC max (pulse , 100 120 140 160 Ambient temperature Ta (°C) 4 2002-08-19 2SA1213 RESTRICTIONS
Toshiba
Original
Abstract: 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier , substrate (250 mm × 0.8 t) 1 2002-08-19 2SA1213 Electrical Characteristics (Ta = 25 , name hFE classification NO 2 2002-08-19 2SA1213 VCE ­ IC -1.6 -1.6 VCE ­ IC (V , (mA) Collector current IC (mA) 3 2002-08-19 2SA1213 IC ­ VBE -2.0 Common , Ambient temperature Ta (°C) 4 2002-08-19 2SA1213 RESTRICTIONS ON PRODUCT USE 000707EAA Toshiba
Original
Abstract: 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier , 1 2009-12-21 2SA1213 Electrical Characteristics (Ta = 25°C) Characteristics Symbol , electronic equipment. 2 2009-12-21 2SA1213 VCE â'" IC VCE â'" IC â'1.6 â'1.6 VCE , '1000 â'3000 (mA) 2009-12-21 2SA1213 IC â'" VBE Safe Operating Area â'2.0 â , Ambient temperature Ta (°C) 4 2009-12-21 2SA1213 RESTRICTIONS ON PRODUCT USE â'¢ Toshiba Toshiba
Original

bc 301 transistor

Abstract: 2SA1213 VDD IN 4 10k 2SA1213 EXT VOUT 2 IOUT IN 2SA1213 EXT VOUT 4 VDD ISS , Circuit 2 : Typical Characteristics 5) to 7) PNP 10k IN PNP 2SA1213 VDD 4 10k EXT VOUT IN 3 2 2SA1213 VDD 4 EXT VOUT 2 3 Oscilloscope Oscilloscope 1µF , RN5RG SERIES + + Cap. Cap. GND CE Parts Transistor : 2SA1213 Resistor : 10k
Ricoh
Original
RN5RG50A bc 301 transistor RN5RG30A RN5RG50AA-TR EA-020-0006

BC pnp 200mA

Abstract: 1. VOUT 2. GND 3. VIN 4. CE 5. VOUT SOT-23-5 RN5RG TEST CIRCUITS PNP PNP 10k VDD IN 4 10k 2SA1213 EXT VOUT 2 IOUT IN 2SA1213 EXT VOUT 4 VDD ISS OUT 3 2 OUT 3 10 µF RN5RG SERIES 10µF RN5RG , Characteristics 1) to 4) Test Circuit 2 : Typical Characteristics 5) to 7) PNP 10k IN PNP 2SA1213 VDD 4 10k EXT VOUT IN 3 2 2SA1213 VDD 4 EXT VOUT 2 3 , CE Parts Transistor : 2SA1213 Resistor : 10k Capacitor : 10µF(tantalum type) 10 OUT
Ricoh
Original
BC pnp 200mA 1. VOUT 2. GND 3. VIN 4. CE 5. VOUT SOT-23-5 EA-020-0204
Showing first 20 results.