2SA1069 2SA1069A 2SA1069/2SA1069A D14855JJ3V0DS00 TC-5397A 10IB1 -10IB2 MP-25

Silicon Power Transistor 2SA1069, 1069A PNP 2SA1069,1069A DC/DC 2SA1069 TO-220AB 2SA1069A (TO-220AB) TA = 25°C

Silicon Power Transistor 2SA1069 2SA1069, 1069A PNP 2SA1069 2SA1069,1069A DC/DC 2SA1069 2SA1069 TO-220AB 2SA1069A 2SA1069A (TO-220AB) TA = 25°C ° 2SA1069/2SA1069A 2SA1069/2SA1069A VCBO -80 V VCEO -60 / 80 V VEBO -12 V IC(DC) -5.0 A () IC(pulse) -10 A -2.5 A TC = 25°C 30 W TA = 25°C 1.5 W Tj 150 °C Tstg 55+150 °C PW 300 µs, Duty Cycle 10 % IB(DC) PT D14855JJ3V0DS00 D14855JJ3V0DS00 3 (TC-5397A TC-5397A May 2000 NS CP(K) 1988, 2000 2SA1069 2SA1069,1069A TA = 25°C ° 2SA1069 2SA1069 / 2SA1069A 2SA1069A VCEO(SUS) VCEX(SUS)1 MIN. TYP . MAX. IC = 3.0 A, IB1 = 0.3 A, L = 1 mH 60/80 V IC = 3.0 A, IB1 = IB2 = 0.3 A, 60/80 V 60/80 V VBE(OFF) = 5.0 V, L = 180 µH, Clamped VCEX(SUS)2 IC = 6.0 A, IB1 = 0.6 A, IB2 = 0.3 A, VBE(OFF) = 5.0 V, L = 180 µH, Clamped ICBO VCB = 60 / 80 V, IE = 0 A 10 µA ICER VCE = 60 / 80 V, RBE = 51 , 1.0 mA VCE = 60 / 80 V, VBE(OFF) = 1.5V 10 µA VCE = 60 / 80 V, VBE(OFF) = 1.5V, 1.0 mA 10 µA TA = 125 ICEX1 ICEX2 TA = 125 VEB = 5.0 V, IC = 0 A IEBO VCE = 5.0 V, IC = 0.3 A VCE = 5.0 V, IC = 3.0 A hFE1 hFE2 IC = 3.0 A, IB = 0.3 A VCE(sat) 40 40 200 0.6 V 1.5 V VBE(sat) IC = 3.0 A, IB = 0.3 A ton IC = 3.0 A, RL = 17 , 0.5 µs tstg IB1 = IB2 = 0.3 A, VCC 50 V 2.5 µs 0.5 µs tf PW 350 µs, Duty Cycle 2 % hFE M L K hFE2 4080 60120 100200 tontstgtf RL IC VIN IB2 IB1 T.U.T. IB1 VCC IB2 10 % IC PW PW 50 µs Duty Cycle 2 % 2 90 % VBB 5.0 V ton D14855JJ3V0DS00 D14855JJ3V0DS00 tstg tf 2SA1069 2SA1069,1069A TA = 25 °C TOTAL POWER DISSIPATION vs. CASE TEMPERATURE FORWARD BIAS SAFE OPERATING AREA -30 50 -10 20 1m s IC(DC) IC (A) 30 PW IC(pulse) 10 m 30 100 µs 0µ s Di 100 m s ss s Lim ipa ite tion d -1 10 -0.1 0 -25 0 50 100 150 2SA1069 2SA1069 2SA1069A 2SA1069A Single Pulse -0.03 -10 -1 TC (°C) -100 TRANSIENT THERMAL RESISTANCE 100 s/b D is 60 rth(j-c) (°C/W) dT (%) 10 80 Lim ite d si pa tio n 40 Li m ite d 20 0 50 100 VCE = -20 V Tj = 50 °C 1 0.1 0.01 0.01 150 0.1 10 1 100 PW (ms) TC (°C) REVERSE BIAS SAFE OPERATING AREA COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE -5 -8 -4 IC (A) -10 IC (A) -1000 - VCE (V) DERATING CURVE OF SAFE OPERATING AREA 0 =3 0µ s ited Lim S/b PT (W) 40 -6 -4 -2 -80 mA -90 mA -100 mA -70 mA -60 mA -50 mA -40 mA -3 -30 mA -20 mA -2 IB = -10 mA -1 2SA1069 2SA1069 2SA1069A 2SA1069A 0 0 -40 -80 -120 0 0 - VCE (V) -1 -2 -3 -4 -5 - VCE (V) D14855JJ3V0DS00 D14855JJ3V0DS00 3 2SA1069 2SA1069,1069A COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = -5.0 V hFE TA = 125°C 75°C 25°C 100 -25°C 10 1 -0.01 -0.1 -1 -10 -10 VBE(sat) (V) VCE(sat) (V) 1000 -1.0 -0.1 -0.01 -0.01 tf (µ s) tstg (µ s) ton (µ s) TURN ON TIME, STORAGE TIME AND FALL TIME vs. COLLECTOR CURRENT 10 IC = 10IB1 10IB1 = -10IB2 -10IB2 tstg 1.0 ton tf 0.1 -0.5 -1 -5 -10 IC (A) 4 VBE(sat) VCE(sat) -0.1 -1 IC (A) IC (A) 0.01 -0.1 IC = 10 AIB D14855JJ3V0DS00 D14855JJ3V0DS00 -10 2SA1069 2SA1069,1069A mm TO-220AB (MP-25 MP-25) 10.6 MAX. 4.8 MAX. 3.6±0.2 1.3±0.2 4 15.5 MAX. 10.0 5.9 MIN. 3.0±0.3 1.3±0.2 0.75±0.1 2.54 TYP. 12.7 MIN. 1 2 3 6.0 MAX. 0.5±0.2 2.8±0.2 2.54 TYP. 1. 2. 3. 4.() D14855JJ3V0DS00 D14855JJ3V0DS00 5 2SA1069 2SA1069,1069A 6 D14855JJ3V0DS00 D14855JJ3V0DS00 2SA1069 2SA1069,1069A D14855JJ3V0DS00 D14855JJ3V0DS00 7 2SA1069 2SA1069,1069A · · · · · · OAAV M798.8 FAX E-mail 9:0012:00 1:005:00 044-548-8899 044-548-7900 s-info@saed.tmg.nec.co.jp (03)3798-6106, 6107, 6108 (052)222-2375 (06)6945-3178, 3200, 3208, 3212 (022)267-8740 (024)923-5591 (043)238-8116 (03)3798-6110, 6111, 6112 (042)526-5981, 6167 (0263)35-1662 (054)254-4794 (076)232-7303 (089)945-4149 (03)3798-6151, 6155, 6586, 1622, 1623, 6156 (029)226-1702 (082)242-5504 (027)326-1303 (0857)27-5313 (0276)46-4014 (052)222-2170, 2190 (092)261-2806 NEC NECURL http://www.ic.nec.co.jp/ C00.4