2SA1050 -140V - Datasheet Archive

 

Product Specification 2SA1050 Silicon PNP Power Transistors DESCRIPTION With TO-3 package High transition frequency Excellent

 

JMnic Product Specification 2SA1050 2SA1050 Silicon PNP Power Transistors DESCRIPTION With TO-3 package High transition frequency Excellent safe operating area APPLICATIONS For audio and general purpose power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -140 V VCEO Collector-emitter voltage Open base -140 V VEBO Emitter-base voltage Open collector -5 V -12 A 100 W IC Collector current PC Collector power dissipation Tj Junction temperature 175 Tstg Storage temperature -55~200 TC=25 JMnic Product Specification 2SA1050 2SA1050 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -140 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -140 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V Collector-emitter saturation voltage IC=-8A; IB=-0.8A -2.5 V VBE Base-emitter on voltage IC=-6A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-140V -140V; IE=0 -10 A IEBO Emitter cut-off current VEB=-5V; IC=0 -10 A hFE-1 DC current gain IC=-1A ; VCE=-5V 55 hFE-2 DC current gain IC=-6A ; VCE=-5V 35 Transition frequency IC=-1A ; VCE=-10V VCEsat fT CONDITIONS 2 MIN TYP. MAX UNIT 160 70 MHz JMnic Product Specification 2SA1050 2SA1050 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3