2SA1020 - Datasheet Archive

 

2SA1020 TO-92MOD TRANSISTOR (PNP) FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM : 900 mW (Tamb=25) 3. BASE Collector

 

2SA1020 2SA1020 2SA1020 2SA1020 TO-92MOD TRANSISTOR (PNP) FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM : 900 mW (Tamb=25) 3. BASE Collector current ICM : -2 A Collector-base voltage V V(BR)CBO : -50 Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100µA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100 µA, IC=0 -5 V Collector cut-off current ICBO VCB=-50 V, IE=0 -1 µA Emitter cut-off current IEBO VEB=-5 V, IC=0 -1 µA DC current gain hFE(1) VCE=-2 V, IC=-500 A Collector-emitter saturation voltage VCE(sat) IC=-1A, IB=-50 mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-1 A, IB=-50 mA -1.2 V fT VCE=-2 V, IC=-500 mA Transition frequency 70 240 100 CLASSIFICATION OF hFE(1) Rank Range WEJ ELECTRONIC CO. O Y 70-140 120-240 Http:// www.wej.cn E-mail:wej@yongerjia.com MHz