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2PB1219AS T/R Datasheet

Part Manufacturer Description PDF Type
2PB1219AST/R NXP Semiconductors PNP general purpose transistor - Complement: 2PD1820AS ; fT min: 140 MHz; hFE max: 340 ; hFE min: 170 ; I<sub>C</sub> max: 500 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 50 V Original
2PB1219AS T/R Philips Semiconductors TRANS GP BJT PNP 50V 0.5A 3SOT323 T/R Original

2PB1219AS T/R

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2PB1219AS DS VcB O VCEO UNIT - -3 0 V 2PB1219A CQ MAX. 2PB1219 SYMBOL , 2PB1219S 140 - MHz 2PB1219AS TYPE NUMBER 140 - MHz PARAMETER collector-base , mW to t up to Tarrib = 25 â'C; note 1 ^stg storage temperature -65 + 150 °C T, junction temperature - 150 â'C ^"amb operating ambient temperature + 150 , 2PB1219; 2PB1219A CHARACTERISTICS Tamb = 25 ' C unless otherwise specified. SYMBOL V (B R )C B O -
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2PB1219Q 2PB1219R 2PB1219AQ 2PB1219AR

SOT323 Marking LE

Abstract: T31G DESCRIPTION R1 2 MARKING TYPE NUMBER 2PB1219AQ 2PB1219AR 2PB1219AS QUICK REFERENCE DATA SYMBOL V CBO V CEO ICM Plot hFE t i, MARKING CODE DtQ DtR DtS Top view t i, MAM048 Fig.1 Simplified , collector current total power dissipation DC current gain transition frequency 2PB1219AQ 2PB1219AR 2PB1219AS , CONDITIONS note 1 VALUE 625 UNIT K/W o UJ O > V ebo !c 'cm Ib m Ptot T 31g mA A mA mW -65 -65 C 3 C T, Tam b c 1997 Mar 25 206 Philips Semiconductors Product specification
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SOT323 Marking LE T31G 2PD1820A
Abstract: NUMBER 2PB1219AQ 1 DQ 2PB1219AR DR 2PB1219AS 2 Top view MAM048 DS Note Fig.1 1. = - : Made in Hong Kong. = t : Made in Malaysia. Simplified outline (SOT323; SC70 , 85 170 2PB1219AR 120 240 2PB1219AS 170 340 hFE DC current gain IC = , ; note 1 100 - MHz 2PB1219AR 120 - MHz 2PB1219AS 140 - MHz 2PB1219AQ , , Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Philips Semiconductors
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M3D187 SCA63

2PB1219AR

Abstract: 2PB1219AS NUMBER DQ 1 2PB1219AR DR Top view 2PB1219AS DS 2PB1219AQ Note Fig.1 1. = - : Made in Hong Kong. = t : Made in Malaysia. 2 MAM048 Simplified outline (SOT323; SC70 , -10 V; note 1 170 340 hFE DC current gain 2PB1219AS IC = -500 mA; VCE = -10 V; note 1 , - MHz 2PB1219AS 140 - MHz 2PB1219AQ Note 1. Pulse test: tp 300 s; 0.02
NXP Semiconductors
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Abstract: NUMBER Dâ—Q 1 2PB1219AR Dâ—R Top view 2PB1219AS Dâ—S 2PB1219AQ Note Fig.1 1. ◠= - : Made in Hong Kong. ◠= t : Made in Malaysia. 2 MAM048 Simplified outline , 340 hFE DC current gain 2PB1219AS IC = â'500 mA; VCE = â'10 V; note 1 40 â , 2PB1219AR 120 â' MHz 2PB1219AS 140 â' MHz Note 1. Pulse test: tp ≤ 300 μs; Î NXP Semiconductors
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Abstract: 2PB1219AS Transistors Si PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)25 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V).6 @I(C) (A) (Test Condition)300m @I(B) (A) (Test Condition)30m h(FE) Min. Current gain.170 h(FE) Max. Current gain.340 @I(C) (A) (Test Condition)150m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq140M @I(C) (A) (Test Condition) @V American Microsemiconductor
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marking code p07 sot89

Abstract: marking code 3Fp MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce M ark in g co , 2PB709AQ 2PB709AR 2PB709AS 2PB710AQ 2PB710AR 2PB710AS 2PB1219AQ 2PB1219AR 2PB1219AS 2PC4081Q 2PC4081R , C96 97p 98p K7p K8p C1p C2p D ip D2p D3p AAp ABp ACp ADp BAp BBp BCp BDp H1p H2p K1p K2p K3p H3p T ip , BSR17A BSR18A BSR19 BS R 19A BSR20 1Vt MARKING CODE 1Wp 1Xp 1Wt 1Yp F8p F8t NCp NDp F2p G1p A5p A51 , TC143EK PD TC143ET PDTC143EU P D T C144EE PD TC144EK PDTC144ET PDTC144EU PDTD114ET PMBS3904 PMBS3906
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marking code p07 sot89 marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 T07 marking 2PA1576Q 2PA1576R 2PA1576S 2PA17 2PA1774R 2PA1774S

marking A4t sot23

Abstract: A1t SOT23 ) 1PS79SB40 T SC-79/SOD523 1N4736A 4736A P SOD66 (DO41) 1PS79SB70 G SC-79/SOD523
Philips Semiconductors
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marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 transistor marking codes A4p 1N5817 1N821 1N5818 1N821A 1N5819 1N823

marking A4t sot23

Abstract: PH C5V1 1N4735A 4735A P SOD66 (DO41) 1PS79SB40 T SC-79/SOD523 1N4736A 4736A P SOD66 (DO41
Philips Semiconductors
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T2D 79 diode C18 ph diode T2D DIODE A4T SOT23 1n4148 sot23 A6t SOT23 1PS59SB10 SC-59/SOT346 1N823A 1PS59SB14 1N825 1PS59SB15

TRANSISTOR BC 448 smd

Abstract: transistor MPSA77 250 400 600 600 250 400 600 475 250 475 800 250 475 800 800 250 475 800 800 , 250 475 800 800 250 475 800 >100 >100 , -16 BD227 BD229 BD231 BD330 BD826 BD826-10 BD826-16 BD828 BD828-10 BD828-16 BD830 BD830-10 r BD830-16 VCEO , 1500 1500 1500 1500 1500 1500 3000 1000 1000 1000 1000 1000 1000 1000 1000 1000 r Ptot max. (mW , hFE max. 200 fj min. (MHz) 60 toff max. (ns) 700 REMARKS Ptot @ T mb " 525 C PAGE 161
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2PC945K 2PC945Q BC337 TRANSISTOR BC 448 smd transistor MPSA77 JA101P transistor pn2222 transistor TO-92 bc108 BC853B 2N2484 2N4124 2N5088 2PC945 2PC945P

philips diode PH 33D

Abstract: philips diode PH 33J 1N4735A 4735A P SOD66 (DO41) 1PS79SB40 T SC-79/SOD523 1N4736A 4736A P SOD66 (DO41
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philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph 1N825A 1PS59SB16 1N827 1PS59SB20 1N827A 1PS59SB21

philips diode PH 33D

Abstract: PH C5V1 ; 6-6 P1 45 S0 S7 S1 S4 S2 F T G 8t5 44 43 45 S4 S5 S6 A3T B3T F3T C3T A3 B3 PACKAGE SOD81 SOD81 , L4 L41 L42 L43 L44 L4p L4t L51 L6p L6t L7p L7t L8p L8t L9p L9t L0p L0t P1 S0 S1 S2 S4 S4 S5 S6 S7 T
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PH 33D PH33D ph33g PH 33G philips diode PH 37m ph c24 1N829 1N829A 1N914 1N4148 1N4150 1N4151

transistor SMD s72

Abstract: nec mys 501 N C H L P R S T U V K * + + + *- ­55.+85° *- EIA , «» . SOD123 7. R, C L, . , . , (. «. »). R , ). , [] E3 E6 E12 E24 E48 E96 E192 , [%] E = ±0.001 L = ±0.002 R = ±0.005 P = ±0.01 U = ±0.02 A = ±0.05 B = ±0.1 C = ±0.25 D = ±0.5 F = ±1 G = ±2 ­ R (E) = 1 K (K) = 103 M (M) = 106 G () = 109 T (T) = 10 12 J = ±5 K = ±10 M = ±20 N = ±30 TKC, [ppm/0C] T = ±10 E = ±25 C = ±50 K =
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transistor SMD s72 nec mys 501 MYS 99 st MYS 99 102 transistor 8BB smd kvp 81A BC818W MUN5131T1 BC846A SMBT3904 MVN5131T1 DO215