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2N956 Datasheet

Part Manufacturer Description PDF Type
2N956 Central Semiconductor Leaded Small Signal Transistor General Purpose Original
2N956 Boca Semiconductor GENERAL PURPOSE TRANSISTOR (NPN SILICON) Scan
2N956 Central Semiconductor NPN- METAL CAN - SWITCHING AND GENERAL PURPOSE Scan
2N956 Central Semiconductor NPN Metal Can Switching and General Purpose Transistors Scan
2N956 Crimson Semiconductor Transistor Selection Guide Scan
2N956 Diode Transistor SMALL SIGNAL TRANSISTORS Scan
2N956 General Transistor Small Signal Transistor Selection Guide Scan
2N956 Micro Electronics Semiconductor Devices Scan
2N956 Micro Electronics Semiconductor Device Data Book Scan
2N956 Motorola Motorola Semiconductor Datasheet Library Scan
2N956 N/A Transistor Shortform Datasheet & Cross References Scan
2N956 N/A Basic Transistor and Cross Reference Specification Scan
2N956 N/A GE Transistor Specifications Scan
2N956 N/A GE Transistor Specifications Scan
2N956 N/A Transistor Replacements Scan
2N956 N/A Catalog Scans - Shortform Datasheet Scan
2N956 N/A Shortform Transistor PDF Datasheet Scan
2N956 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N956 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2N956 N/A Shortform Electronic Component Datasheets Scan
Showing first 20 results.

2N956

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: MAXIMUM RATINGS Rating Symbol 2N718A 2N956 2N1711 Unit Collector-Emitter Voltage VCER 50 Vdc , -65 to +200 °C THERMAL CHARACTERISTICS Characteristic Symbol 2N718A 2N956 2N1711 Unit , 219 "C/W 2N718A 2N956 CASE 22-03, STYLE 1 TO-18 (TO-206AA) 3 Collector 1 Emitter 2N1711 CASE 79-04 , Vdc, Iq - 0) 2N718A, 2N956, 2N1711 Iebo â'" â'" 0.010 0.005 /¡¡Ade ON CHARACTERISTICS DC Current Gain (IC = 0.01 mAdc, Vce = 10 Vdc) 2N956, 2N1711 h FE 20 â'" â'" â'" flC = 0.1 mAdc, Vce = 10 Vdc -
OCR Scan
2N3019 2N1711 MOTOROLA 2N956 MOTOROLA 2N718 T0-205AD
Abstract: MAXIMUM RATINGS Rating Symbol 2N718A 2N956 2N1711 Unit Collector-Emitter Voltage VCER 50 Vdc , +200 THERMAL CHARACTERISTICS Characteristic Symbol 2N718A 2N956 2N1711 Unit Thermal Resistance, Junction to Ambient R0JA 350 58 °C/W Thermal Resistance, Junction to Case R0JC 97 219 x/w 2N718A 2N956 , , 2N956, 2N1711 Iebo - - 0.010 0.005 uAdc ON CHARACTERISTICS DC Current Gain dC = 0.01 mAdc, VCE = 10 Vdc) 2N956, 2N1711 hFE 20 _ _ - (lc = 0.1 mAdc, Vce = 10 Vdc) 2N718A, 2N956, 2N1711 20 35 - - -
OCR Scan
X10-4 2N1711N 2IM3019
Abstract: - Tstg 500 2.86 1.8 10.3 2N718A 2N956 50 75 7.0 800 4.57 3.0 17.15 1 ; I 2N1711 Unit Vdc Vdc Vdc mW m W :C W atts m W :C C 2N718A 2N956 CASE 22-03, STYLE 1 TO-18 (TO-206AA) - 6 5 to +200 2N1711 , bient Therm al Resistance, Junctio n to Case Symbol R«j a R0JC 2N718A 2N956 350 97 2N1711 58 219 Unit , 0.01 m Adc, V c e = 10 Vdc) (lc = 0.1 m Adc, V c e = 10 Vdc) h FE 2N956, 2N1711 2N718A, 2N956, 2N1711 2N718A, 2N956, 2N1711 2N718A, 2N956, 2N1711 2N718A, 2N956, 2N1711 2N718A, 2N956, 2N1711 VcE lsatl v BE -
OCR Scan
2N1711 M
Abstract: °C (d 2N718A 2N956 Symbol VCER VCBO v EBO PD 2N718A 2N956 2N1711 50 75 Unit Vdc CASE , TRANSISTORS NPN SIUCON Refer to 2N3019 fo r graphs. Symbol r 0JA 2N718A 2N956 350 97 2N1711 58 219 , , Vce = 10 Vdc} hFE 2N956, 2N1711 2N718A, 2N956, 2N1711 2N718A, 2N956, 2N1711 2N718A, 2N956, 2N1711 2N718A, 2N956, 2N1711 2N718A, 2N956, 2N1711 v CE(sat) v BE(satl 2.0%. 20 20 35 35 75 20 35 40 100 20 40 , (BR)E80 fCBO 50 75 7.0 - - - - - - Vdc Vdc Vdc /¿Ade 'EBO 2N718A, 2N956, 2N1711 - -
OCR Scan
Abstract: | | CONTACT US | VIEW CART | SHIPPING http://store.americanmicrosemiconductor.com/2n956.html 4/12 , 2N956 General purpose transistor 8.00 Transistors Transistors Bipolar Si NPN Low-Pow. Page 1 of 1 Enter Your Part # Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N956 2N956 General purpose transistor Enter code INTER3 at checkout , Available from $ 8.00 Manufacturer Partnumber: List Price: Our Price: You Save: 2N956 $ 10.00 American Microsemiconductor
Original
Abstract: 2N718A 2N956 SILICON PLANAR NPN AMPLIFIERS AND SWITCHES The 2N 718A and 2N 956 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case, intended for high-speed switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS VcBO Collector-base voltage (lE = 0) 75 V VcER , /76 228 2N718A 2N956 THERMAL DATA max 97 °C/W max 350 °C/W Rth j-case Thermal resistance , 2N956 ELECTRICAL CHARACTERISTICS (continued) Parameter Test conditions Min. Typ. Max. Unit hFE DC -
OCR Scan
718a
Abstract: TYPES 2N731, 2N956, 2N1420, 2N1S07, N-P-N SILICON TRANSISTORS ¿ U t ) » ' ? J . U n - B U L L E T IN NO. DL-S 6 9 3 4 7 1 , MAY 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable , types 2N717, 2N718, 2N718A, 2N730, 2N731, and 2N956 are in JEDEC TO-18 packages. Device types 2N696 , 2N956 75 50 2N1420 2N 1613 2 N 1 7 1 1 2N1507 60 30 75 50 75 50 UN IT V V V V Collector-Base Voltage , operating and switching characteristics for types 2N 718A, 2N956, 2N1613, and 2N1711 on page 4*30. NOTE -
OCR Scan
2n161 2N956 TEXAS INSTRUMENTS 2N697 100CC
Abstract: /76 200 2N718A 2N956 THERMAL DATA Mh j-amb Thermal resistance junction-case Thermal resistance , =10V lc= 0.1mA VCE=10V 20 35 40 120 20 20 20 35 - 201 2N718A 2N956 ELECTRICAL CHARACTERISTICS -
OCR Scan
Abstract: s IN CORPORATED TYPES 2N718A, 2N956. 2 N1420, 2N1507, 2N1613. 2N1711 N-P-N SILICON TRANSISTORS , ty p e s kmse. ?n637 m w '¿am. m i sua 2N956, 2K1420 2N1&0? 2l\h613. ¿«1711 N-P-N SILICON TRANSISTORS B U L L E T IN NO . DL-S 6 9 3 4 7 1 , MAY 1 9 6 3 - R E V I S E D A U G U S T 19 Highly , data Device types 2N717, 2N718, 2N718A, 2N730, 2N731, and 2N956 are in JEDEC TO-18 packages. Device , 0.5 (?) 1.0 («) 1.0 200 2N730 2N731 60 40 5 1.0 0.5 2N956 75 50 7 0.5 2N1420 2N1613 2 N 171 1 -
OCR Scan
Abstract: ) NATL SEniCOND 50 2N3416 2N3417 2N956 BC182 2N5323 BC212 70 150 50 200 100 100 150 150 50 -
OCR Scan
BT2907A TN2905A T0-92 BC237 BC337 BC547 BC182 BC547 BC547 surface mount 2n5962 SD113Q 2N4032 2N6554 PN2907A PN3645
Abstract: type* 2N717, 2N718, 2N718A, 2N730, 2N731, and 2N956 are in JEDEC TO-18 packages. Device types 2N696 , 60 40 5 0.4 75 50 32 7 0.5 60 40 5 1.0 0.S 2N956 2N1420 2 N 1 6 I3 2N1711 2N1507 75 50 7 0.5 60 -
OCR Scan
N1711 N1613 2N17TI
Abstract: 225 2.0 T0-92(94) 360 2N3417 500 180 540 2.0 T0-92(94) 360 2N956 1000 50 200 150 70 50 TO -
OCR Scan
MMBT2907A PN4249 PN4250A PN4355 BC337/BC327 BC237 NATIONAL SEMICONDUCTOR BC547 to92 S0113D T0-202
Abstract: General Transistor Corporation SMALL SIGNAL TRANSISTORS NPN General Purpose veto hFEetc VCE(SAT) ts Typt No. Ptal VCER* MNMAX 00 h tOFF @ IOIB PACKAGE â'¢ (mW) M MAX (â A) (MHz) (tu) 2N718A 500 50* 40/120 150 1.5 150/15 60 2N720A 500 80 40/- 150 5 150/15 50 2N915 500 50 50/200 10 1 10/1 300 2N916 500 40 50/200 10 0.5 10/1 300 TO-1B 2N956 500 50' 100/300 150 1.5 150/15 70 225 2N2221 500 30 40/120 150 1.6 500/50 250 225 2N2221A 500 40 40/120 150 1 500/50 250 225 2N2222 500 30 -
OCR Scan
2N2222A 2N3700 2M1711 b0050 2N1893 2N2102 2N2218
Abstract: 1 500 250 225 500 2N 2221A 50* 100/300 150 2N956 1.5 150 70 â'" 500 2N 718A 55 60/180 150 BFR 18 -
OCR Scan
BFR38 BFX89 BFR99 BSX33 BC377 UHF UHF Transistors transistor 2n 3839 uhf amplifier t 3866 transistor
Abstract: M O T O R O L A SC -CDIODES/OPTO} 34 D t,3fc,7S55 0 0 3 7 ^ 7 4 1 34C SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) 37974 D 7"-3r- /S DIE NO. NPN LINE SOURCE - DMB101 2C2222A - This die provides performance similar to that of the following device types: 2N696* 2N697 2N731 2N956 2N1420* 2N1613 2N1711 2N1959* 2N1983* 2N1984* 2N2218.A 2N2219.A 2N2221,A 2N2222.A 2N2224* 2N2477 2N2539 2N2540 2N2741 2N278B 2N2789 2N2790 2N2791 2N2792 2N2845 2N2846* 2N2847 2N2848* 2N2951 -
OCR Scan
2N2959 2N3015 2N3115 2N3706 2N5219 2N5225 MOTOROLA 2n2218 TRANSISTOR 2N2222A motorola MPS8092 2N2952 2N2958 2N3116
Abstract: General Transistor Corporation SMALL SIGNAL TRANSISTORS NPN General Purpose Typt No. Ptol (mW) 500 500 500 500 500 500 500 500 500 500 800 800 800 1000 800 800 800 800 800 800 800 800 800 800 800 800 1000 1000 600 600 800 1000 1000 VCEO VCER* M 50* 80 50 40 50* 30 40 30 40 80 50* 50* 80 65 30 40 30 40 80 80 40 60 60 40 40 30 75 50 40* 80* 150 45 90 hFEO c UNMAX (AI (V) MAX VCE(SAT) (A) Ir (MHz) ts tOFF®IC/IB (tu) PACKAGE · 2N718A 2N720A 2N915 2N916 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 -
OCR Scan
2N310B 2N2270 2N2218A 2N2219A 2N3020 2N3053 2N3107
Abstract: 2221 40 100/300 150 2N 2222A 1 500 250 225 500 2N 2221A 50* 100/300 150 2N956 1.5 150 70 â'" 500 2N -
OCR Scan
BFY90 BFX73 BFR99A 2N3137 BFR36 2N5109 bfr18 BF272A p 3866
Abstract: . 2N9I1 2NQ12 7N9U 2N9I5 2N9I6 2N9I7 2N918 2N929 2N929A 2N930 2N930A 2N956 2N98I 2N995 NPN NPN NPN NPN NPN -
OCR Scan
2N656 2N699 2N703 2N706 2N760 2N760A 2N784 Crimson Semiconductor 35-140 2N834 2N783
Abstract: 2N915 500 50 50/200 10 1 10/1 300 2N916 500 40 50/200 10 0.5 10/1 300 2N956 500 50* 100/300 150 1.5 -
OCR Scan
2N1921 2N2004 2N2280 N2905 N2907 N2907A transistor t05 2N3040 2N2927A t05 transistor J515TQR 2N327A N328A 2N329A 2N330 2N726
Abstract: * mechanical data Device types 2N717, 2N718, 2N718A, 2N730, 2N731, and 2N956 are in JEDEC TO-18 packages , Temperature Operating Collector Junction Temperature Storage Temperature Range 2N956 2 N M 2 0 2N1613 -
OCR Scan
Abstract: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, ZUmO, 2N150J. 2N1613. 2N1711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications from 150 ma, dc to 30 me · High Voltage * Low leakage · Useful hFE Over Wide Current Range * mechanical data Device types 2N717, 2N718, 2N718A, 2N730, 2N731, and 2N956 are in JEDEC TO -
OCR Scan
2NI613 SA37T 2n1711 Texas
Abstract: , and 2N956 are in JEDEC TO-18 packages. Device types 2N696, 2N697, 2N1420, 2N1507, 2N1613, and 2N1711 -
OCR Scan
2n1413 2NT711 3N696
Abstract: 3QE D 7^5 3 7 aoaioa? 5 T~- 3 5 -ic] 2 N 718A 2 N 956 SGS-THOMSON iO L iO IT G M O O S S G S-THOMSON AMPLIFIERS AND SWITCHES D E S C R IP T IO N The 2N718A and 2N956 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case, inten ded for high-speed switching and amplifier applica tions. ABSOLUTE M AXIM UM RATINGS Sym bol V cB O VcE R V ebo P a ra m e te r C ollecto r-b a se V oltage ( I e = 0) C o lle c to r-e m itte r V oltage ( R b e < 10 D ) E m itte r-b a s -
OCR Scan
N718A 2N718A-2N956 D031Q
Abstract: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 7MI 31. ?tW58. 2N1420. 2N1507, 2W1613, 2NI71I N-P-N SILICON TRANSISTORS B U L L E T I N N O. D L - S 6 9 3 4 7 1 , M A Y 1 9 6 3 - B E V I S 6 D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications from 150 ma, dc to 30 me · High Voltage · Low Leakage · Useful hFE Over Wide Current Range * mechanical data Device types 2N717, 2N718, 2N718A, 2N730, 2N731, and 2N956 are in -
OCR Scan
2N73A 2W17 ml907 TW58
Showing first 20 results.