Datasheet Search Results			1 - 50 of about 65 for 2N929
	2N929	Advanced Semiconductor, Inc.	Silicon Transistor Selection Guide	384.32 Kb,  5 Pages.
	2N929	Bharat Electronics Ltd	Transistor Selection Guide	56.27 Kb,  1 Pages.
	2N929	Central Semiconductor	NPN METAL-CAN SATURATED SWITCH / LOW NOISE LEVEL AMPLIFIER	324.01 Kb,  3 Pages.
	2N929	Continental Device India Limited	Semiconductor Device Data Book 1996	97.02 Kb,  1 Pages.
	2N929	Crimson Semiconductor	Transistor Selection Guide	41.53 Kb,  1 Pages.
	2N929	Ferranti Semiconductors	Quick Reference Guide 1985	101.73 Kb,  3 Pages.
	2N929	Ferranti Semiconductors	Metal Can Transistors (Short Form)	123.7 Kb,  4 Pages.
	2N929	Ferranti Semiconductors	Shortform Data Book 1971	137.13 Kb,  3 Pages.
	2N929	General Diode	Transistor Selection Guide	594.42 Kb,  10 Pages.
	2N929	General Electric	Semiconductor Data Book 1971	274.87 Kb,  1 Pages.
	2N929	ITT Semiconductors	Semiconductor Summary 1969	67.85 Kb,  1 Pages.
	2N929	Micro Electronics	Semiconductor Devices	87.95 Kb,  1 Pages.
	2N929	Micro Electronics	Semiconductor Device Data Book	58.31 Kb,  1 Pages.
	2N929	Motorola	The European Selection Data Book 1976	64.96 Kb,  2 Pages.
	2N929	Motorola / Freescale Semiconductor	Low Level and General Purpose Amplifiers	112.71 Kb,  1 Pages.
	2N929	National Semiconductor	Low Level Amplifiers	137.53 Kb,  4 Pages.
	2N929	National Semiconductor	NPN Transistors	666.62 Kb,  17 Pages.
	2N929	Newmarket Transistors Ltd (NKT)	Product Portfolio 1972/73	37.85 Kb,  1 Pages.
	2N929	Raytheon Company	Selection Guide 1977	175.36 Kb,  4 Pages.
	2N929	Semelab	Low Frequency Silicon Power NPN Transistor	49.88 Kb,  1 Pages.
	2N929	Semelab	Bipolar NPN Device in a Hermetically Sealed TO18 Metal Package - Pol=NPN / Pkg=TO18 / Vceo=45 / Ic=30m / Hfe=40-120 / fT(Hz)=30M / Pwr(W)=0.3	9.79 Kb,  1 Pages.
	2N929	Semicoa Semiconductor	PNP Silicon Power Transistors / Low Level Amplifiers	194.73 Kb,  1 Pages.
	2N929	Semiconductors, Inc.	Audio Frequency Small Signal Transistors	646.86 Kb,  7 Pages.
	2N929	Semitronics Corp.	Metal Can Transistors - Silicon Small Signal Transistors	329.43 Kb,  4 Pages.
	2N929	SGS-Ates	Shortform Data Book 1977/78	28.16 Kb,  1 Pages.
	2N929	Telefunken Electronic	Electronic Component Data Book 1976	71.72 Kb,  1 Pages.
	2N929	Telefunken Electronic	Low Power Transistor Data Book 1977	54.35 Kb,  3 Pages.
	2N929	Texas Instruments	Discrete Devices 1978	140.09 Kb,  2 Pages.
	2N929	Texas Instruments	Semiconductor and Components Data Book 1967/8	47.54 Kb,  1 Pages.
	2N929	Thomson-CSF	Condensed Data Book 1977	32.8 Kb,  1 Pages.
	2N929	Thomson-CSF	Signal Transistors and Field Effect Transistors 1976	92.43 Kb,  5 Pages.
	2N929	Thomson-CSF	Shortform Semiconductor Catalogue 1982	120.38 Kb,  1 Pages.
	2N929	ZaeriX	Short Form Data Catalogue 1972-73	47.05 Kb,  1 Pages.
	2N929	N/A	Shortform Data and Cross References (Misc Datasheets)	38.07 Kb,  1 Pages.
	2N929	N/A	Shortform Electronic Component Datasheets	246.92 Kb,  5 Pages.
	2N929	N/A	Shortform Transistor Datasheet Guide	97.8 Kb,  1 Pages.
	2N929	N/A	Shortform IC and Component Datasheets (Plus Cross Reference Data)	96.98 Kb,  1 Pages.
	2N929	Motorola	Motorola Semiconductor Datasheet Library	177.52 Kb,  1 Pages.
	2N929	SGS-Thomson	Transistor Datasheet	191.73 Kb,  6 Pages.
	2N929	N/A	Vintage Transistor Datasheets	52.17 Kb,  1 Pages.
	2N929	National Semiconductor	Pro-Electron Transistor Datasheets	29.26 Kb,  1 Pages.
	2N9291	N/A	Semiconductor Master Cross Reference Guide	108.17 Kb,  1 Pages.
	2N9292	N/A	Semiconductor Master Cross Reference Guide	108.17 Kb,  1 Pages.
	2N929/46	N/A	Shortform Transistor Datasheet Guide	97.8 Kb,  1 Pages.
	2N929/51	N/A	Discontinued Transistor Data Book 1975	187.6 Kb,  2 Pages.
	2N929/51	N/A	Shortform Transistor Datasheet Guide	97.8 Kb,  1 Pages.
	2N929A	Central Semiconductor	NPN METAL-CAN SATURATED SWITCH / LOW NOISE LEVEL AMPLIFIER	324.01 Kb,  3 Pages.
	2N929A	Central Semiconductor	Leaded Small Signal Transistor General Purpose	31.48 Kb,  1 Pages.
	2N929A	Crimson Semiconductor	Transistor Selection Guide	41.53 Kb,  1 Pages.
	2N929A	General Diode	Transistor Selection Guide	594.42 Kb,  10 Pages.
	Datasheets per page:  50 | 250 | 500

Fulltext Datasheet Results		1 - 50 of about 183 for 2N929
	First line: 2N929 ZTX107 transistor transistor ZTX108 ZTX 15 ZTX108 E-Line Transistors SILICON TRANSISTORS Applications Chart Type Application Competitive Type Type Application Competitive Type ZTX330, ZTX331, BCW20 BCW22 n-p-n level, noise. n-p-n level, noise. 2N3707 2N929 ZTX107 ZTX108 ZTX1I09 n-p-n high gain Abstract: .. 2N3707 2N3707 2N929 ZTX107 ZTX107 ZTX108 ZTX108 ZTX1I09 ZTX1I09 ^j- n-p-n high gain, low noise BC107 BC107 BC108 BC108 BC109 BC109 ZTX510 ZTX510 , ZTX511 ZTX511 , BSV33 BSV33 BCW21 BCW21 p-n-p switching p-n-p low level, low noise. TIS50 TIS50 2N4058 2N4058 ZTX341 ZTX341 , BSV28 BSV28 ZTX342 ZTX342 ..  Tags: ZTX108 ZTX 15 transistor ZTX108 ZTX107 transistor 2N929   datasheet abstract..	62.12 Kb	1 Pages	OCR Scan
	First line: Unencapsulated Chip Transistors PIMP 'Chip' Transistors Microcircuit Assemblies Characteristics Abstract: .. 1 2N929 2500 C2180H C2180H 45 55 6 >150 5/0.1 2N929 2500 C2300L C2300L 45 80 6 >35 5/10 2N1613 2N1613 1500 C2300H C2300H 45 80 6 >75 5/10 2N1613 2N1613 1500 C2350L C2350L 35 65 5 >40 5/10 2N2218 2N2218 1500 C2350H C2350H 35 65 5 >80 5/10 2N2218 2N2218 1500 ..  Tags:   datasheet abstract..	45.53 Kb	1 Pages	OCR Scan
	First line: BC107 equivalent 2n4058 2N3707 DIODE E-Line Transistors SILICON TRANSISTORS Applications Chart Type Application Competitive Type Type Application Competitive Type ZTX330, ZTX331, BCW20 BCW22 n-p-n level, noise. n-p-n level, noise. 2N3707 2N929 ZTX107 ZTX108 ZTX1I09 n-p-n high gain, noise BC107 BC108 Abstract: .. 2N3707 2N3707 2N929 ZTX107 ZTX107 ZTX108 ZTX108 ZTX1I09 ZTX1I09 ^j- n-p-n high gain, low noise BC107 BC107 BC108 BC108 BC109 BC109 ZTX510 ZTX510 , ZTX511 ZTX511 , BSV33 BSV33 BCW21 BCW21 p-n-p switching p-n-p low level, low noise. TIS50 TIS50 2N4058 2N4058 ZTX341 ZTX341 , BSV28 BSV28 ZTX342 ZTX342 ..  Tags: 2N3707 DIODE 2n4058 BC107 equivalent   datasheet abstract..	94.96 Kb	2 Pages	OCR Scan
	First line: BC107 equivalent 2N329A BCY90 BC178B 2n3019 equivalent Discrete Devices European "Pro Electron" Types Type Near Equivalent Polarity Pkg. BC107 2N2484 TO-18 BC107A 2N930 TO-18 BC107B 2N930 TO-18 BC108 2N2484 TO-18 BC108A 2N930 TO-18 BC108B 2N930 TO-18 Abstract: .. -39 BCY56 BCY56 2N930 2N930 NPN TO-18 TO-18 BCY57 BCY57 2 N 2484 NPN TO-18 TO-18 BCY58 BCY58 2N930 2N930 NPN TO-18 TO-18 BCY58-7 BCY58-7 2N929 NPN TO-18 TO-18 BCY58-8 BCY58-8 2N930 2N930 NPN TO-18 TO-18 BCY58-9 BCY58-9 2N 2484 NPN TO-18 TO-18 BCY59 BCY59 2N930 2N930 NPN TO-18 TO-18 BCY59-7 BCY59-7 2N929 NPN TO-18 TO-18 BCY59 BCY59 ..  Tags: 2n3019 equivalent BC178B BCY90 2N329A BC107 equivalent   datasheet abstract..	67.9 Kb	1 Pages	OCR Scan
	First line: 2N929 Dimensions (inches). Bipolar Device Hermetically sealed TO18 Metal Package. Abstract: .. 2N929. Bipolar NPN Device. VCEO = 45V IC = 0.03A. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications ..  Tags: 2n929   2N929	9.79 Kb	1 Pages	Original
	First line: 2N906* 2N65s 2N907 2N906 2N936* DIGITRON ELECTRONIC CORP 204EbD7 aOGOOGS DIQITRON CORE T-J.y-01 Page Hillside Avenue Springfield. Jersey 07081 201-379-9016 201-379-9019 201-467-8065 JOHN SCHWARTZ ENGINEERING Abstract: .. TO BE ADDED fi—1 2N497AI 2N497AI 2N539 2N539 2N696A 2N696A 2N728 2N728 2N871 2N871 2N922 2N922 \ 2N498 2N498 2N539A 2N539A 2N697 2N697 2N729 2N729 2N876 2N876 2N929 2N499 2N499 2N540 2N540 2N697A 2N697A 2N730 2N730 2N877 2N877 2N929A 2N499A 2N499A 2N540A 2N540A 2N698 2N698 2N731 2N731 2N8 78 2N930 2N930 2N501A 2N501A 2NS52 2NS52 2N699 2N699 2N735 2N735 ..  Tags: 2N936* 2N906 2N907 2N65s 2N906*   datasheet abstract..	69.85 Kb	1 Pages	OCR Scan
	First line: 2N1711 MOTOROLA BSY39 2N697 equivalent 2N2218A 2N2219A motorola 2N3914 Transistors (Cont.) Discrete Devices European "Pro Electron" Types (Cont.) Type Near Equivalent Polarity Pkg. BFX30 N2904A TO-39 BFX37 2N2605* TO-18 BFX65 2N2605* TO-18 BFX84 2N1711 TO-39 BFX85 2N171-1 TO-39 Abstract: .. 2N697 2N697 NPN TO-39 TO-39 BFY52 BFY52 2N1711 2N1711 NPN TO-39 TO-39 BFY56 BFY56 2N697 2N697 NPN TO-39 TO-39 BFY72 BFY72 2N2218 2N2218 NPN TO-39 TO-39 BFY76 BFY76 2N929 NPN TO-18 TO-18 BSX45-6 BSX45-6 2N697 2N697 NPN TO-39 TO-39 Electrical Equivalent Only Dual and Quad Cross-reference Raytheon ..  Tags: 2N3914 2N2218A 2N2219A motorola 2N697 equivalent BSY39 2N1711 MOTOROLA   datasheet abstract..	62.04 Kb	1 Pages	OCR Scan
	First line: MMCF929, MMCF930 (SILICON) MMCF2484 Flip-Chip silicon Annular transistor family low-level amplifier applications similar 2N929, 2N930 2N2484. Primary Electrical Features: High Current Gain mAdc, (Min) MMCF2484 (Min) MMCF929 Collector-Emitter Saturation Voltage VCE(sat) 0-25 (Max) mAdc FLIP-CHIP SMAL Abstract: .. transistor family for low-level amplifier applications similar to the 2N929, 2N930 2N930 and 2N2484 2N2484 . Primary Electrical Features: †� High DC Current Gain < �> lc = 1.0 mAdc, VcE = 5-0 vdc - hFE = 200 ..  Tags:   datasheet abstract..	64.74 Kb	2 Pages	OCR Scan
	First line: BFS36 2N2475 MICRO-E CHARACTERISTICS MEDIUM CURRENT GENERAL PURPOSE TRANSISTORS p-n- Units BFS38A BFS38 BFS39 BFS40A BFS40 BFS41 Parameter Test Conditions Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. vCBO Rated Max. vCEO(sus) 5mA, vEBCi Rated Max. 'CBO vCB=vCBO Rated Max, 'ebo VEBO Abstract: .. equivalents n-p-n p-n-p LOW LEVEL AMPLIFICATION BFS36 BFS36 2N930 2N930 BFS37 BFS37 2N2605 2N2605 BFS36A BFS36A 2N929 BFS37A BFS37A 2 N2604 N2604 MEDIUM CURRENT BFS38A BFS38A ZT80 ZT80 BFS40A BFS40A ZT180 ZT180 BFS38 BFS38 ZT82 ZT82 BFS40 BFS40 ZT182 ZT182 BFS39 BFS39 ZT83 ZT83 BFS41 BFS41 ZT183 ZT183 MEDIUM ..  Tags: 2N2475 BFS36   datasheet abstract..	52.27 Kb	1 Pages	OCR Scan
	First line: BZX88-C5V6* marking Z6 BAW68 F008 MICRO-E MICRO-E PRODUCT LIST Where approval military been obtained appropriate British Standards number indicated under B.S. number. Transistors Diodes Nearest metal Device E-line Device Type marking equivalent B.S. number* Page Type marking BS/CECC number Page BFS3 Abstract: .. /CECC number Page BFS36 BFS36 L1 2N930 2N930 BS9365 BS9365 F014 F014 13 BAW63 BAW63 D1 BS9302 BS9302 F001 F001 * 15 BFS36A BFS36A L2 2N929 BS9365 BS9365 F013 F013 13 BAW63A BAW63A D2 BS9302 BS9302 F002 F002 * 15 BFS37 BFS37 L3 2N2605 2N2605 BS9365 BS9365 F026 F026 13 BAW63B BAW63B D3 BS9302 BS9302 F003 F003 * 15 BFS37A BFS37A L4 2N2604 2N2604 ..  Tags: F008 BAW68 marking Z6 BZX88-C5V6*   datasheet abstract..	52.06 Kb	1 Pages	OCR Scan
	First line: MICRO-E MICRO-E PRODUCT LIST Where approval military been obtained appropriate British Standards number indicated under B.S. number. Transistors Diodes Nearest metal Device E-line Device Type marking equivalent B.S. number* Page Type marking BS/CECC number Page BFS36 2N930 BS9365 F014 BAW63 BS9302 F Abstract: .. number Page BFS36 BFS36 L1 2N930 2N930 BS9365 BS9365 F014 F014 13 BAW63 BAW63 D1 BS9302 BS9302 F001 F001 * 15 BFS36A BFS36A L2 2N929 BS9365 BS9365 F013 F013 13 BAW63A BAW63A D2 BS9302 BS9302 F002 F002 * 15 BFS37 BFS37 L3 2N2605 2N2605 BS9365 BS9365 F026 F026 13 BAW63B BAW63B D3 BS9302 BS9302 F003 F003 * 15 BFS37A BFS37A L4 2N2604 2N2604 BS9365 BS9365 ..  Tags:   datasheet abstract..	120.26 Kb	3 Pages	OCR Scan
	First line: 2N328A BCY34 Discrete Devices Transistors (Cont.) Level Amplifiers Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts HFE<s VCE<Sat) lC/lB NF@f Min/Max Volts mA/mA 2N327A 9/22 2N327B 9/22 TO-39 2N328A 18/44 TO-39 Abstract: .. 1.0 1.0 10/1.0 50 8 - - TO-18 TO-18 2N760A 2N760A NPN 500 60 60 8 76/333 1.0 1.0 10/1.0 50 8 - - TO-18 TO-18 2N929 NPN 300 45 45 5 40/120 0.01 1.0 10/0.5 30 8 4 15.7* TO-18 TO-18 2N929A NPN 500 60 45 6 40/120 0.01 0.5 10/0.5 45 6 4 15.7* TO ..  Tags: BCY34 2N328A   datasheet abstract..	105.56 Kb	2 Pages	OCR Scan
	First line: Silicon Epitaxial Planar Transistors Anwendungen: Rauscharme Applications: noise amplifiers Besondere Merkmale: Besonders rauscharm kleinen Very noise small collector current Abstract: .. -Ausgangsleitwert hoi> 1,0 jS Open circuit output conductance 457 :2N929 �2N930 2N930 Silizium-NPN-Epitaxial-Planar-NIF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen ..  Tags:   datasheet abstract..	72.85 Kb	3 Pages	OCR Scan
	First line: BC178 GENERAL PURPOSE Continued Type VCEO VcE(sat) fiat Ptot Tamb Packaga Complement N3053 1000 TO-39 2N4037 2N696 2N1131 2N697 TO-39 2N1132 BFY51 1000 0-35 TO-39 BC107 TO-18 BC177 BCY59 0-35 1000t TO-18 BCY79 Abstract: .. 2 150 10 300 TO-18 TO-18 BC177 BC177 BCY59 BCY59 45 45 200 0-35 10 0 -25 120 630 2 125 10 1000t 1000t TO-18 TO-18 BCY79 BCY79 2N929 45 45 30 1 10 0-5 40 120 0 01 — — 300 TO-18 TO-18 — 2N930 2N930 45 45 30 1 10 0 5 100 300 0 01 — — 300 TO-18 TO-18 — ZT81 ZT81 45 35 500 ..  Tags: BC178   datasheet abstract..	72.26 Kb	2 Pages	OCR Scan
	First line: BC178 GENERAL PURPOSE Continued Type VCEO VcE(sat) fiat Ptot Tamb Packaga Complement N3053 1000 TO-39 2N4037 2N696 2N1131 2N697 TO-39 2N1132 BFY51 1000 0-35 TO-39 BC107 TO-18 BC177 BCY59 0-35 1000t TO-18 BCY79 Abstract: .. 2 150 10 300 TO-18 TO-18 BC177 BC177 BCY59 BCY59 45 45 200 0-35 10 0 -25 120 630 2 125 10 1000t 1000t TO-18 TO-18 BCY79 BCY79 2N929 45 45 30 1 10 0-5 40 120 0 01 — — 300 TO-18 TO-18 — 2N930 2N930 45 45 30 1 10 0 5 100 300 0 01 — — 300 TO-18 TO-18 — ZT81 ZT81 45 35 500 ..  Tags: BC178   datasheet abstract..	45.79 Kb	1 Pages	OCR Scan
	First line: LEVEL Type VceO VcE(sat) Pto, Tamb Package Complement 'C: Min. Max. 2N3053 1000 TO-39 2N4037 2N696 TO-39 2N1131 2N697 TO-39 2N1132 BFY51 1000 0.35 TO-39 BC107 TO-18 BC177 BCY59 0.35 0.25 1000* TO-18 BCY79 Abstract: .. 2 150 10 300 TO-18 TO-18 BC177 BC177 BCY59 BCY59 45 45 200 0.35 10 0.25 120 630 2 125 10 1000* TO-18 TO-18 BCY79 BCY79 2N929 45 45 30 1 10 0.5 40 120 0.01 - - 300 TO-18 TO-18 - 2N930 2N930 45 45 30 1 10 0.5 100 300 0.01 - - 300 TO-18 TO-18 - ZT81 ZT81 45 35 500 0.2 10 2 38 ..  Tags:   datasheet abstract..	48.77 Kb	1 Pages	OCR Scan
	First line: GENERAL PURPOSE Continued Type VCEO VcE(sat) fiat Ptot Tamb Packaga Complement N3053 1000 TO-39 2N4037 2N696 2N1131 2N697 TO-39 2N1132 BFY51 1000 0-35 TO-39 BC107 TO-18 BC177 BCY59 0-35 1000t TO-18 BCY79 Abstract: .. 150 10 300 TO-18 TO-18 BC177 BC177 BCY59 BCY59 45 45 200 0-35 10 0 -25 120 630 2 125 10 1000t 1000t TO-18 TO-18 BCY79 BCY79 2N929 45 45 30 1 10 0-5 40 120 0 01 — — 300 TO-18 TO-18 — 2N930 2N930 45 45 30 1 10 0 5 100 300 0 01 — — 300 TO-18 TO-18 — ZT81 ZT81 45 35 500 ..  Tags:   datasheet abstract..	142.22 Kb	4 Pages	OCR Scan
	First line: BC177 pnp transistor 2N328A BCY34 Discrete Devices Transistors (Cont.) Level Amplifiers Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts HFE<s VCE<Sat) lC/lB NF@f Min/Max Volts mA/mA 2N327A 9/22 2N327B 9/22 TO-39 2N328A 18/44 TO-39 Abstract: .. 1.0 1.0 10/1.0 50 8 - - TO-18 TO-18 2N760A 2N760A NPN 500 60 60 8 76/333 1.0 1.0 10/1.0 50 8 - - TO-18 TO-18 2N929 NPN 300 45 45 5 40/120 0.01 1.0 10/0.5 30 8 4 15.7* TO-18 TO-18 2N929A NPN 500 60 45 6 40/120 0.01 0.5 10/0.5 45 6 4 15.7* TO ..  Tags: BCY34 2N328A BC177 pnp transistor   datasheet abstract..	151.29 Kb	3 Pages	OCR Scan
	First line: ZT1701 ZT1483 BCW23 E-Line Transistors SILICON TRANSISTORS Applications Chart Type Application Competitive Type Type Application Competitive Type ZTX330, ZTX331, BCW20 BCW22 n-p-n level, noise. n-p-n level, noise. 2N3707 2N929 ZTX107 ZTX108 ZTX1I09 n-p-n high gain, noise BC107 BC108 BC109 ZTX510, ZT Abstract: .. 2N3707 2N3707 2N929 ZTX107 ZTX107 ZTX108 ZTX108 ZTX1I09 ZTX1I09 ^j- n-p-n high gain, low noise BC107 BC107 BC108 BC108 BC109 BC109 ZTX510 ZTX510 , ZTX511 ZTX511 , BSV33 BSV33 BCW21 BCW21 p-n-p switching p-n-p low level, low noise. TIS50 TIS50 2N4058 2N4058 ZTX341 ZTX341 , BSV28 BSV28 ZTX342 ZTX342 ..  Tags: BCW23 ZT1483 ZT1701   datasheet abstract..	155.66 Kb	3 Pages	OCR Scan
	First line: 2N2219 MOTOROLA BC17* BT2222 2N328A BCY34 Discrete Devices Transistors (Cont.) Level Amplifiers Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts HFE<s VCE<Sat) lC/lB NF@f Min/Max Volts mA/mA 2N327A 9/22 2N327B 9/22 TO-39 2N328A 18/44 TO-39 Abstract: .. 1.0 1.0 10/1.0 50 8 - - TO-18 TO-18 2N760A 2N760A NPN 500 60 60 8 76/333 1.0 1.0 10/1.0 50 8 - - TO-18 TO-18 2N929 NPN 300 45 45 5 40/120 0.01 1.0 10/0.5 30 8 4 15.7* TO-18 TO-18 2N929A NPN 500 60 45 6 40/120 0.01 0.5 10/0.5 45 6 4 15.7* TO ..  Tags: BCY34 2N328A BT2222 BC17* 2N2219 MOTOROLA   datasheet abstract..	193.89 Kb	4 Pages	OCR Scan
	First line: NOISE TABLE SILICON PLANAR NOISE TRANSISTORS transistors shown this table characterised noise, level amplification particularly suitable audio pre-amplifiers well universal applications. devices listed orderof decreasing Breakdown Voltage (Vceo). decreasing Collector Current (lc). Power Dissipation Abstract: .. 10 <6 100 1 K TO-18 TO-18 ZT184 ZT184 BCY59 BCY59 45 200 0 -35 10 0 -25 120 630 2 125 10 <6 200 1 K TO-18 TO-18 BCY79 BCY79 2N929 45 30 1 10 0 -5 40 120 0 01 — — <4 10 1K TO-18 TO-18 — 2N930 2N930 45 30 1 10 0 -5 100 300 0 01 — — <4 10 1 K TO-18 TO-18 — 2N2219A 2N2219A ..  Tags:   datasheet abstract..	89.39 Kb	2 Pages	OCR Scan
	First line: 2N328A BCY34 2n3219 2N3913 BCY95 Discrete Devices Transistors (Cont.) Choppers Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts HFE@ VcEtSat) Ic/lB @>IB rrf@ Min/Max Volts mA/mA Ohms 2N943 10/- T0-18 2N2004 TO-39 2N2333 2.75 TO-18 Abstract: .. -39 BCY56 BCY56 2N930 2N930 NPN TO-18 TO-18 BCY57 BCY57 2 N 2484 NPN TO-18 TO-18 BCY58 BCY58 2N930 2N930 NPN TO-18 TO-18 BCY58-7 BCY58-7 2N929 NPN TO-18 TO-18 BCY58-8 BCY58-8 2N930 2N930 NPN TO-18 TO-18 BCY58-9 BCY58-9 2N 2484 NPN TO-18 TO-18 BCY59 BCY59 2N930 2N930 NPN TO-18 TO-18 BCY59-7 BCY59-7 2N929 NPN TO-18 TO-18 BCY59 BCY59 ..  Tags: BCY95 2N3913 2n3219 BCY34 2N328A   datasheet abstract..	114.22 Kb	2 Pages	OCR Scan
	First line: ZTX108 BCW23 E-Line Transistors SILICON TRANSISTORS Applications Chart Type Application Competitive Type Type Application Competitive Type ZTX330, ZTX331, BCW20 BCW22 n-p-n level, noise. n-p-n level, noise. 2N3707 2N929 ZTX107 ZTX108 ZTX1I09 n-p-n high gain, noise BC107 BC108 BC109 ZTX510, ZTX511, B Abstract: .. 2N3707 2N3707 2N929 ZTX107 ZTX107 ZTX108 ZTX108 ZTX1I09 ZTX1I09 ^j- n-p-n high gain, low noise BC107 BC107 BC108 BC108 BC109 BC109 ZTX510 ZTX510 , ZTX511 ZTX511 , BSV33 BSV33 BCW21 BCW21 p-n-p switching p-n-p low level, low noise. TIS50 TIS50 2N4058 2N4058 ZTX341 ZTX341 , BSV28 BSV28 ZTX342 ZTX342 ..  Tags: BCW23 ZTX108   datasheet abstract..	128.41 Kb	2 Pages	OCR Scan
	First line: 2904a 2N328A BCY34 Transistors (Cont.) Discrete Devices General Purpose Amplifiers (Cont.) Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts VcE<Sat)@lc/lB Min/Max Volts mA/mA 2N2897 50/200 500/50 TO-18 2N2898 40/120 500/50 T046 2N2899 60/200 500/50 Abstract: .. -39 BCY56 BCY56 2N930 2N930 NPN TO-18 TO-18 BCY57 BCY57 2 N 2484 NPN TO-18 TO-18 BCY58 BCY58 2N930 2N930 NPN TO-18 TO-18 BCY58-7 BCY58-7 2N929 NPN TO-18 TO-18 BCY58-8 BCY58-8 2N930 2N930 NPN TO-18 TO-18 BCY58-9 BCY58-9 2N 2484 NPN TO-18 TO-18 BCY59 BCY59 2N930 2N930 NPN TO-18 TO-18 BCY59-7 BCY59-7 2N929 NPN TO-18 TO-18 BCY59 BCY59 ..  Tags: BCY34 2N328A 2904a   datasheet abstract..	113.1 Kb	2 Pages	OCR Scan
	First line: marking Z6 transistor w4� MICRO-E MICRO-E PRODUCT LIST Where approval military been obtained appropriate British Standards number indicated under B.S. number. Transistors Diodes Nearest metal Device E-line Device Type marking equivalent B.S. number* Page Type marking BS/CECC number Page BFS36 2N930 Abstract: .. number Page BFS36 BFS36 L1 2N930 2N930 BS9365 BS9365 F014 F014 13 BAW63 BAW63 D1 BS9302 BS9302 F001 F001 * 15 BFS36A BFS36A L2 2N929 BS9365 BS9365 F013 F013 13 BAW63A BAW63A D2 BS9302 BS9302 F002 F002 * 15 BFS37 BFS37 L3 2N2605 2N2605 BS9365 BS9365 F026 F026 13 BAW63B BAW63B D3 BS9302 BS9302 F003 F003 * 15 BFS37A BFS37A L4 2N2604 2N2604 BS9365 BS9365 ..  Tags: transistor w4Â marking Z6   datasheet abstract..	74.2 Kb	2 Pages	OCR Scan
	First line: BEL100N* 2N2368 bel 100n transistor npn BEL100N BEL 100N TRANSISTOR BHARAT ELEK/SEMICOND 143S3Tfl flTG BELI VCEO VCBO Vebo Plot ICBO (Sat) Device Volts Volts Votls bias Volts Volts Package /max SWITCHING TRANSISTORS 2N2218 40/120 toff 285max Abstract: .. 2N929 45 45 5 100/350 10 5 60 300 .01 .6 80 — — 2 TO 18 55. 2N930 2N930 45 45 5 150/600 10 5 60 300 .01 .6 80 — — 2 c. Powered by ICminer.com Electronic-Library Service CopyRight 2003 BHARAT ELEK/SEMICOND DI 47E ..  Tags: BEL 100N TRANSISTOR BEL100N bel 100n transistor npn 2N2368 BEL100N*   datasheet abstract..	74.78 Kb	1 Pages	OCR Scan
	First line: 2G381 2N404 transistor Electronic Valves Aero Services London England 1972-73 Continue^ <1' Minimum value Average value Abstract: .. HF G.P. 0.75* 2N916 2N916 S/NPN T018 T018 360mW 360mW 400mc 400mc "' + 45 50-200 10mA 10mA Amplifier/Oscillator 0.20* 2N929 S/NPN T018 T018 300mW 300mW 50mc 50mc " ' + 45 100-350 10mA 10mA | Low noise Ampl. up to 100mc 100mc 0.20* 2N930 2N930 S/NPN T018 T018 300mW 300mW ..  Tags: 2N404 transistor 2G381   datasheet abstract..	65.53 Kb	1 Pages	OCR Scan
	First line: 2N760 2N328A Discrete Devices Transistors (Cont.) Level Amplifiers Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts HFE<s VCE<Sat) lC/lB NF@f Min/Max Volts mA/mA 2N327A 9/22 2N327B 9/22 TO-39 2N328A 18/44 TO-39 Abstract: .. 0 50 8 - - TO-18 TO-18 2N929 NPN 300 45 45 5 40/120 0.01 1.0 10/0.5 30 8 4 15.7* TO-18 TO-18 2N929A NPN 500 60 45 6 40/120 0.01 0.5 10/0.5 45 6 4 15.7* TO-18 TO-18 2N930 2N930 NPN 300 45 45 5 100/300 0.01 1.0 10/0.5 30 8 3 15.7* TO-18 TO-18 ..  Tags: 2N328A 2N760   datasheet abstract..	57.07 Kb	1 Pages	OCR Scan
	First line: BEL BF200 BEL100N VCEO VCBO Vebo Plot ICBO (Sat) Device Volts Volts Votls bias Volts Volts Package /max SWITCHING TRANSISTORS 2N2218 40/120 toff nsec 285max 2218A 40/120 2219 100/300 Abstract: .. 2N929 45 45 5 55. 2N930 2N930 45 45 5 20min 20min . 3 1 100/350 10 5 150/600 10 5 50 200 .01 4 900 60 300 .01 .6 80 60 300 .01 .6 80 1.7 — 5 — 2 — 2 TO 72 TO 18 SI Device No. VCEO VollS min. VCBO VollS min. VEBO VoI1s min. hFE alblas min ..  Tags: BEL100N BEL BF200   datasheet abstract..	162.01 Kb	1 Pages	OCR Scan
	First line: 2N2907 NPN Transistor 2N328A Discrete Devices Transistors (Cont.) Level Amplifiers Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts HFE<s VCE<Sat) lC/lB NF@f Min/Max Volts mA/mA 2N327A 9/22 2N327B 9/22 TO-39 2N328A 18/44 TO-39 Abstract: .. 0 50 8 - - TO-18 TO-18 2N929 NPN 300 45 45 5 40/120 0.01 1.0 10/0.5 30 8 4 15.7* TO-18 TO-18 2N929A NPN 500 60 45 6 40/120 0.01 0.5 10/0.5 45 6 4 15.7* TO-18 TO-18 2N930 2N930 NPN 300 45 45 5 100/300 0.01 1.0 10/0.5 30 8 3 15.7* TO-18 TO-18 ..  Tags: 2N328A 2N2907 NPN Transistor   datasheet abstract..	145.43 Kb	3 Pages	OCR Scan
	First line: 2N328A BCY34 Discrete Devices Transistors (Cont.) Medium Current, High-Speed Amplifiers Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts VcE(Sat)<s>lc/lB tOFF Min/Max Volts mA/mA 2N721A 20/45 150/15 TO-18 2N722A PIMP 30/90 150/15 TO-18 2N1132A 30/90 15 Abstract: .. -39 BCY56 BCY56 2N930 2N930 NPN TO-18 TO-18 BCY57 BCY57 2 N 2484 NPN TO-18 TO-18 BCY58 BCY58 2N930 2N930 NPN TO-18 TO-18 BCY58-7 BCY58-7 2N929 NPN TO-18 TO-18 BCY58-8 BCY58-8 2N930 2N930 NPN TO-18 TO-18 BCY58-9 BCY58-9 2N 2484 NPN TO-18 TO-18 BCY59 BCY59 2N930 2N930 NPN TO-18 TO-18 BCY59-7 BCY59-7 2N929 NPN TO-18 TO-18 BCY59 BCY59 ..  Tags: BCY34 2N328A   datasheet abstract..	167.86 Kb	3 Pages	OCR Scan
	First line: MICRO-E MICRO-E PRODUCT LIST Where approval military been obtained appropriate British Standards number indicated under B.S. number. Transistors Diodes Nearest metal Device E-line Device Type marking equivalent B.S. number* Page Type marking BS/CECC number Page BFS36 2N930 BS9365 F014 BAW63 BS9302 F Abstract: .. number Page BFS36 BFS36 L1 2N930 2N930 BS9365 BS9365 F014 F014 13 BAW63 BAW63 D1 BS9302 BS9302 F001 F001 * 15 BFS36A BFS36A L2 2N929 BS9365 BS9365 F013 F013 13 BAW63A BAW63A D2 BS9302 BS9302 F002 F002 * 15 BFS37 BFS37 L3 2N2605 2N2605 BS9365 BS9365 F026 F026 13 BAW63B BAW63B D3 BS9302 BS9302 F003 F003 * 15 BFS37A BFS37A L4 2N2604 2N2604 BS9365 BS9365 ..  Tags:   datasheet abstract..	166.85 Kb	4 Pages	OCR Scan
	First line: GENERAL PURPOSE Continued Type VCEO VcE(sat) Ptot Tamb Package Complement 2N3053 1000 T039 2N4037 2N696 T039 2N1131 2N697 T039 2N1132 BFY51 1000 0-35 T039 BC107 T018 BC177 BCY59 0-25 1000t T018 BCY79 Abstract: .. 460 2 150 10 300 T018 T018 BC177 BC177 BCY59 BCY59 45 45 200 0 -35 10 0-25 120 630 2 125 10 1000t 1000t T018 T018 BCY79 BCY79 2N929 45 45 30 1 10 0 -5 40 120 0 01 — — 300 T018 T018 — 2N930 2N930 45 45 30 1 10 0 -5 100 300 0 01 — — 300 T018 T018 — ZT81 ZT81 45 35 500 0-2 10 2 38 162 ..  Tags:   datasheet abstract..	187.03 Kb	5 Pages	OCR Scan
	First line: 1N760* 1N760A CRIMSON SEMICONDUCTOR BilMOTb 2514096 CRIMSON SEMICONDUCTOR 00292 DEVICE TYPt PACKAGE BVCEO BVCBO BVEBO ICBO (mAI ltf| |<rA| lpt1 (MHtj (JO) 2N656 TO-5 2N697 TO-5 2N699 TO-5 Abstract: .. 2N9I1 2NQ12 2NQ12 7N9U 2N9I5 2N9I6 2N9I7 2N918 2N918 2N929 2N929A 2N930 2N930 2N930A 2N930A ÃŽN956 N956 2N98I 2N98I 2N995 2N995 NPN NPN NPN NPN NPN NPN PNP PNP NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN PNP TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 ..  Tags: 1N760A 1N760*   datasheet abstract..	60.03 Kb	1 Pages	OCR Scan
	First line: Transistor BC177 GENERAL PURPOSE Continued Type VCEO VcE(sat) fiat Ptot Tamb Packaga Complement N3053 1000 TO-39 2N4037 2N696 2N1131 2N697 TO-39 2N1132 BFY51 1000 0-35 TO-39 BC107 TO-18 BC177 BCY59 0-35 1000t TO-18 BCY79 Abstract: .. 150 10 300 TO-18 TO-18 BC177 BC177 BCY59 BCY59 45 45 200 0-35 10 0 -25 120 630 2 125 10 1000t 1000t TO-18 TO-18 BCY79 BCY79 2N929 45 45 30 1 10 0-5 40 120 0 01 — — 300 TO-18 TO-18 — 2N930 2N930 45 45 30 1 10 0 5 100 300 0 01 — — 300 TO-18 TO-18 — ZT81 ZT81 45 35 500 0 -2 10 2 38 162 ..  Tags: Transistor BC177   datasheet abstract..	213.37 Kb	6 Pages	OCR Scan
	First line: SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS SILICIUM, PLANAR EPIT.AXIAUX small signal amplif ication (low noise) Amplification petits signaux (faible bruit) Preferred device Dispositif 'CEO "21E Abstract: .. =1 mA f = 1 kHz h21e h21e 2N929 2N930 2N930 60 350 150 600 Input impedance Impà �dance d'entrà �e Vcb = 5v lE = —1 mA f = 1 kHz h11b h11b 25 32 n Reverse voltage transfer ratio Rapport de transfert inverso de la ..  Tags:   datasheet abstract..	110.97 Kb	5 Pages	OCR Scan
	First line: Transistor BC177 LEVEL Type VceO VcE(sat) Pto, Tamb Package Complement 'C: Min. Max. 2N3053 1000 TO-39 2N4037 2N696 TO-39 2N1131 2N697 TO-39 2N1132 BFY51 1000 0.35 TO-39 BC107 TO-18 BC177 BCY59 0.35 0.25 1000* TO-18 BCY79 Abstract: .. 2 150 10 300 TO-18 TO-18 BC177 BC177 BCY59 BCY59 45 45 200 0.35 10 0.25 120 630 2 125 10 1000* TO-18 TO-18 BCY79 BCY79 2N929 45 45 30 1 10 0.5 40 120 0.01 - - 300 TO-18 TO-18 - 2N930 2N930 45 45 30 1 10 0.5 100 300 0.01 - - 300 TO-18 TO-18 - ZT81 ZT81 45 35 500 0.2 10 2 38 ..  Tags: Transistor BC177   datasheet abstract..	87.59 Kb	2 Pages	OCR Scan
	First line: BC178 Metal Metal Product Variations TO-5, TO-39 TO-18 supplied with several variations from standard. Lead Finish standard lead finishes supplied Texas Instruments gold coated unless otherwise stated either these finishes will supplied depending current stock/ availability situation. specify leads Abstract: .. 120 0.01 100 500 60 60 1 1 350 350 Complementary to 2N2483 2N2483 "1 Complementary to 2N2484 2N2484 / ow lse 2N929 2N930 2N930 NPN NPN T018 T018 T018 T018 45 45 5 45 45 5 30 30 0 5 60 — 0.5 150 — 0.01 40 120 0.01 100 300 30 30 10 10 1000 1000 2 ..  Tags: BC178   datasheet abstract..	84.45 Kb	1 Pages	OCR Scan
	First line: BT2222 BT2222A Discrete Devices Beam Lead Chips Transistor Chips 100% Probed Parameters (Partial List) Mech. Outline Owg. Function Polarity Type Similar bvcbo bvceo bvebo VcE(Sat) Ic/lb Ident. Type Volts Volts Volts Min/Max Volts mA/mA Code1 Level BT929 2N929 40/120 0.01 0.35 1/0.1 Amplifier BT930 2 Abstract: ..  �A Volts Mill � 10 mA Volts Min @ 10 yA Min/Max mA Volts Max mA/mA Code1 Low Level NPN BT929 BT929 2N929 45 45 5 40/120 0.01 0.35 1/0.1 60 1 RL Amplifier NPN BT930 BT930 2N930 2N930 45 45 5 100/500 0.01 0.35 1/0.1 60 1 RL NPN ..  Tags: BT2222A BT2222   datasheet abstract..	65.17 Kb	1 Pages	OCR Scan
	First line: 2S503* 2S503 Silicon Transistors Type Case Maximum Ratings amb. Characteristics vce(sat) P.o, Min. Max. Min. Max. Mc/s Abstract: .. V V V A w mA mA Mc/s mA mA V 2N929 T018 T018 P 45 45 5 0-03 0-3 0-01 40 120 0-5 30 10 0-5 10 2N930 2N930 T018 T018 P 45 45 5 003 0-3 001 100 300 0-5 30 10 0-5 1-0 2N2483 2N2483 T018 T018 P 60 60 6 005 0-36 001 40 120 0-5 60 1-0 0-1 0-35 2 N2484 N2484 T018 T018 ..  Tags: 2S503 2S503*   datasheet abstract..	66.02 Kb	1 Pages	OCR Scan
	First line: BC107C*� BC107* BC107C TO-18 Metal-Can Package Transistors (NPN) Maximum Ratings Electrical Characteristics Unless Otherwise Specified) Type ^cbo ^ceo Vebo 'cm 'cBO (mA) 'ces (HA) (mA) ^ce(sat) (mA) (PF) (MHz) (mA) Freq (dB) (MHz) 2N915 0.36 0.01 2N916 0.36 0.01 2N929 0.03 0.01 0.01 2N930 0.03 0.01 Abstract: .. .36 0.01 60 50 200 10 5 1 0.9 10 3.5 2N916 2N916 45 25 5 0.36 0.2 0.01 30 50 200 10 1 0.5 0.9 10 6 2N929 45 45 5 0.5 0.03 0.01 45 60 40 350 120 10 0.5 0.01 5 5 5 1 0.6 1 10 8 30 0.5 4 2N930 2N930 45 45 5 0.5 0.03 0.01 45 0.01 45 150 100 600 ..  Tags: BC107C BC107* BC107C*Â   datasheet abstract..	115.52 Kb	1 Pages	OCR Scan
	First line: 2N3565 SE4010 Level General Purpose Amplifiers TYPE POLARITY CASE MAXIMUM RATINGS VCE(SAT) (MHz) (pF) N.F. (dB) (mW) (mA| VCEO ImAI (mA) PN3565 TO-92A 0.35 PN3566 TO-92A PN3694 TO-92A 0.2+ PN4249 TO-92A 0.25 PN4250 TO-92A 0.25 Abstract: .. N TO-18 TO-18 500 50 25 40 100 10 5 0.5 10 70 6 — 2N841 2N841 N TO-18 TO-18 500 100 45 76 333* 5 1 10 50 8 - - 2N929 N TO-18 TO-18 300 1000 45 60 400 10 5 2 10 40 15 — 2N929A N TO-18 TO-18 500 ' 30 45 45 120 0.01 5 1 10 30 8 4 2N930 2N930 N TO-18 TO-18 500 30 45 100 ..  Tags: SE4010 2N3565   datasheet abstract..	76.79 Kb	1 Pages	OCR Scan
	First line: Transistor BC177 GENERAL PURPOSE Continued Type VCEO VcE(sat) fiat Ptot Tamb Packaga Complement N3053 1000 TO-39 2N4037 2N696 2N1131 2N697 TO-39 2N1132 BFY51 1000 0-35 TO-39 BC107 TO-18 BC177 BCY59 0-35 1000t TO-18 BCY79 Abstract: .. 150 10 300 TO-18 TO-18 BC177 BC177 BCY59 BCY59 45 45 200 0-35 10 0 -25 120 630 2 125 10 1000t 1000t TO-18 TO-18 BCY79 BCY79 2N929 45 45 30 1 10 0-5 40 120 0 01 — — 300 TO-18 TO-18 — 2N930 2N930 45 45 30 1 10 0 5 100 300 0 01 — — 300 TO-18 TO-18 — ZT81 ZT81 45 35 500 0 -2 10 2 38 162 ..  Tags: Transistor BC177   datasheet abstract..	195.88 Kb	6 Pages	OCR Scan
	First line: MICRO-E MICRO-E PRODUCT LIST Where approval military been obtained appropriate British Standards number indicated under B.S. number. Transistors Diodes Nearest metal Device E-line Device Type marking equivalent B.S. number* Page Type marking BS/CECC number Page BFS36 2N930 BS9365 F014 BAW63 BS9302 F Abstract: .. number Page BFS36 BFS36 L1 2N930 2N930 BS9365 BS9365 F014 F014 13 BAW63 BAW63 D1 BS9302 BS9302 F001 F001 * 15 BFS36A BFS36A L2 2N929 BS9365 BS9365 F013 F013 13 BAW63A BAW63A D2 BS9302 BS9302 F002 F002 * 15 BFS37 BFS37 L3 2N2605 2N2605 BS9365 BS9365 F026 F026 13 BAW63B BAW63B D3 BS9302 BS9302 F003 F003 * 15 BFS37A BFS37A L4 2N2604 2N2604 BS9365 BS9365 ..  Tags:   datasheet abstract..	85.45 Kb	2 Pages	OCR Scan
	First line: TABLE MPN/PNP HIGH FREQUENCY devices shown this table designed high frequency operation such application areas amplification, switching oscillation. transistors marked with particularly suitable Video stages television receivers where important characteristics include high frequency response, feedba Abstract: .. number Page BFS36 BFS36 L1 2N930 2N930 BS9365 BS9365 F014 F014 13 BAW63 BAW63 D1 BS9302 BS9302 F001 F001 * 15 BFS36A BFS36A L2 2N929 BS9365 BS9365 F013 F013 13 BAW63A BAW63A D2 BS9302 BS9302 F002 F002 * 15 BFS37 BFS37 L3 2N2605 2N2605 BS9365 BS9365 F026 F026 13 BAW63B BAW63B D3 BS9302 BS9302 F003 F003 * 15 BFS37A BFS37A L4 2N2604 2N2604 BS9365 BS9365 ..  Tags:   datasheet abstract..	92.87 Kb	2 Pages	OCR Scan
	First line: BC17* BSX51A* BC178 BSW22A BSW21A Small Signal Metal TO-18 METAL TRANSISTORS (NPN TYPES) GENERAL PURPOSE SWITCH AMPLIFIER vCEO Device Polarity VCER If; max. min. Type (VDC) (mA) (mA) BC107,A,B BC108AB,C BCY58 BCY59 Abstract: .. > Device Type Polarity vCEO Vdc Iq max. mA Hfe min. @ "C mA VCE Volts BC109 BC109 2N929 2N930 2N930 2N 2483 2N 2484 NPN NPN NPN NPN NPN 20 45 45 60 60 30 30 30 50 50 200 40 100 100 200 2 0.01 0.01 0.5 0.5 TO-18 TO-18 METAL ..  Tags: BSW21A BSW22A BC178 BSX51A* BC17*   datasheet abstract..	83.47 Kb	2 Pages	OCR Scan
	First line: marking C1s MICRO-E MICRO-E PRODUCT LIST Where approval military been obtained appropriate British Standards number indicated under B.S. number. Transistors Diodes Nearest metal Device E-line Device Type marking equivalent B.S. number* Page Type marking BS/CECC number Page BFS36 2N930 BS9365 F014 BA Abstract: .. number Page BFS36 BFS36 L1 2N930 2N930 BS9365 BS9365 F014 F014 13 BAW63 BAW63 D1 BS9302 BS9302 F001 F001 * 15 BFS36A BFS36A L2 2N929 BS9365 BS9365 F013 F013 13 BAW63A BAW63A D2 BS9302 BS9302 F002 F002 * 15 BFS37 BFS37 L3 2N2605 2N2605 BS9365 BS9365 F026 F026 13 BAW63B BAW63B D3 BS9302 BS9302 F003 F003 * 15 BFS37A BFS37A L4 2N2604 2N2604 BS9365 BS9365 ..  Tags: marking C1s   datasheet abstract..	82.53 Kb	2 Pages	OCR Scan
	First line: SP3725* 2N1711 MOTOROLA 2N706 BSY38(A) Transistors (Cont.) Discrete Devices Ultra High-Speed Logic Switches Type Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts VcE(Sat) lC/lB tOFF Min/Max Volts mA/mA 2N706 20/- 10/1 TO-18 2N706A 20/60 10/1 TO-18 2N706B 20/60 10/1 TO-18 Abstract: .. 2N697 2N697 NPN TO-39 TO-39 BFY52 BFY52 2N1711 2N1711 NPN TO-39 TO-39 BFY56 BFY56 2N697 2N697 NPN TO-39 TO-39 BFY72 BFY72 2N2218 2N2218 NPN TO-39 TO-39 BFY76 BFY76 2N929 NPN TO-18 TO-18 BSX45-6 BSX45-6 2N697 2N697 NPN TO-39 TO-39 Electrical Equivalent Only Dual and Quad Cross-reference Raytheon ..  Tags: BSY38(A) 2N706 2N1711 MOTOROLA SP3725*   datasheet abstract..	92.82 Kb	2 Pages	OCR Scan
	First line: LEVEL Type VceO VcE(sat) Pto, Tamb Package Complement 'C: Min. Max. 2N3053 1000 TO-39 2N4037 2N696 TO-39 2N1131 2N697 TO-39 2N1132 BFY51 1000 0.35 TO-39 BC107 TO-18 BC177 BCY59 0.35 0.25 1000* TO-18 BCY79 Abstract: .. 2 150 10 300 TO-18 TO-18 BC177 BC177 BCY59 BCY59 45 45 200 0.35 10 0.25 120 630 2 125 10 1000* TO-18 TO-18 BCY79 BCY79 2N929 45 45 30 1 10 0.5 40 120 0.01 - - 300 TO-18 TO-18 - 2N930 2N930 45 45 30 1 10 0.5 100 300 0.01 - - 300 TO-18 TO-18 - ZT81 ZT81 45 35 500 0.2 10 2 38 ..  Tags:   datasheet abstract..	79.24 Kb	2 Pages	OCR Scan
	First line: SE4010 MPS9600 MPS9632 (I) Level General Purpose Amplifiers TYPE POLA- CASE MAXIMUM RATINGS VCE(sat) N.F. RITY VCEO (mW) (mA) mill (mA) (mA) (MHz) (MHz) (dB) MPS9600 TO-92A MPS9601 TO-92A MPS9602 TO-92A MPS9630 TO-92A MPS9631 TO-92A Abstract: .. N TO-18 TO-18 500 50 25 40 100 10 5 0.5 10 70 6 - 2N841 2N841 N TO-18 TO-18 500 100 45 76 333 â– � 5 1 10 50 8 - - 2N929 N TO-18 TO-18 300 1000 45 60 400 10 5 2 10 40 15 - 2N929A N TO-18 TO-18 500 30 45 45 120 0.01 5 1 10 30 8 4 2N930 2N930 N TO-18 TO-18 500 30 45 100 300 ..  Tags: MPS9632 (I) MPS9600 SE4010   datasheet abstract..	131.2 Kb	1 Pages	OCR Scan
	Datasheets per page:  50 | 250 | 500

Specsheet Results
	2N929	N/A	Silicon NPN	Specification
	2N929	N/A	Low Power, Low Noise, General Purpose	Specification
	2N929-46	N/A	Low Power, Low Noise, General Purpose	Specification
	2N929/51	N/A	Si NPN Lo-Pwr BJT	Specification
	2N929-51	N/A	Low Power, Low Noise, General Purpose	Specification
	2N929(A)	N/A	Silicon NPN	Specification
	2N929A	N/A	Low Power, Low Noise, General Purpose	Specification
	2N929AJ	N/A	Si NPN Lo-Pwr BJT	Specification
	2N929+JAN	Defense Supply Center Columbus	Si NPN Lo-Pwr BJT	Specification
	2N929+JANTX	Defense Supply Center Columbus	Si NPN Lo-Pwr BJT	Specification

Stock photo available at buy-transistors.com - (+44) 191-417-7003 or enquiries@buy-transistors.com for quote.

Search Syntax | Privacy Policy | Disclaimer
© 2012 Datasheet Archive