FRF254 2N7296D 2N7296R 2N7296H 100KRAD 300KRAD 1000KRAD 3000KRAD MIL-S-19500

REGISTRATION PENDING Currently Available as FRF254(D, R, H) 2N7296D, 2N7296R 2N7296H Radiation Hardened N-Channel Power MOSFETs

S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRF254 FRF254(D, R, H) 2N7296D 2N7296D, 2N7296R 2N7296R 2N7296H 2N7296H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package · 17A, 250V, RDS(on) = 0.185 TO-254AA · Second Generation Rad Hard MOSFET Results From New Design Concepts · Gamma · Gamma Dot · Photo Current · Neutron · Single Event - Meets Pre-Rad Specifications to 100KRAD 100KRAD(Si) Defined End Point Specs at 300KRAD 300KRAD(Si) and 1000KRAD 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 15.0nA Per-RAD(Si)/sec Typically Pre-RAD Specifications for 1E13 Neutrons/cm2 Usable to 1E14 Neutrons/cm2 Typically Survives 1E5ions/cm2 Having an LET 35MeV/mg/cm2 and a Range 30µm at 80% BVDSS Symbol Description The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. Heavy ion survival from signal event drain burn-out exists for linear energy transfer (LET) of 35 at 80% of rated voltage. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. This part may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500 MIL-S-19500, TXV equivalent of MIL-S-19500 MIL-S-19500, or space equivalent of MIL-S19500 MIL-S19500. Contact the Harris Semiconductor High-Reliability Marketing group for any desired deviations from the data sheet. Absolute Maximum Ratings (TC = +25oC) Unless Otherwise Specified Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain-Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG Lead Temperature (During Soldering) Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright © Harris Corporation 1992 12-82 2N7296D 2N7296D, R, H 250 250 UNITS V V 17 11 51 ±20 A A A V 125 50 1.00 51 17 51 -55 to +150 W W W/oC A A A oC 300 oC File Number 3232 Specifications 2N7296D 2N7296D, 2N7296R 2N7296R, 2N7296H 2N7296H - Registration Pending Pre-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS Drain-Source Breakdown Volts BVDSS VGS = 0, ID = 1mA 250 - V Gate-Threshold Volts VGS(th) VDS = VGS, ID = 1mA 2.0 4.0 V Gate-Body Leakage Forward IGSSF VGS = +20V - 100 nA Gate-Body Leakage Reverse IGSSR VGS = -20V - 100 nA Zero-Gate Voltage Drain Current IDSS1 IDSS2 IDSS3 VDS = 250V, VGS = 0 VDS = 200V, VGS = 0 VDS = 200V, VGS = 0, TC = +125oC - 1 0.025 0.25 mA Time = 20µs - 51 A Rated Avalanche Current IAR Drain-Source On-State Volts VDS(on) VGS = 10V, ID = 17A - 3.30 V Drain-Source On Resistance RDS(on) VGS = 10V, ID = 11A - 0.185 td(on) VDD = 125V, ID = 17A - 114 Pulse Width = 3µs - 162 Period = 300µs, Rg = 25 - 990 0 VGS 10 (See Test Circuit) - 256 Turn-On Delay Time Rise Time tr ns Turn-Off Delay Time td(off) Fall Time tf Gate-Charge Threshold QG(th) 4 18 Gate-Charge On State QG(on) 66 264 125 500 3 12 VDD = 125V, ID = 17A IGS1 = IGS2 0 VGS 20 nc Gate-Charge Total QGM Plateau Voltage VGP Gate-Charge Source QGS 12 48 Gate-Charge Drain QGD 31 124 Diode Forward Voltage VSD 0.6 1.8 V Reverse Recovery Time TT - 2000 ns - 1.0 - 48 V nc Junction-To-Case Rja I = 17A; di/dt = 100A/µs Rjc Junction-To-Ambient ID = 17A, VGD = 0 oC/W Free Air Operation VDD E1 = 0.5 BVDSS VC = 0.75 BVDSS RL L V1 VDS E1 DUT VC Rg 0.06 IL FIGURE 1. SWITCHING TIME TESTING FIGURE 2. CLAMPED INDUCTIVE SWITCHING, ILM 12-83 Specifications 2N7296D 2N7296D, 2N7296R 2N7296R, 2N7296H 2N7296H - Registration Pending Post-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETER Gate-Body Leakage Forward (Note 4, 6) BVDSS 2N7296D 2N7296D, R BVDSS (Note 4, 6) (Note 3, 5, 6) Gate-Source Threshold Volts TYPE (Note 5, 6) Drain-Source Breakdown Volts SYMBOL TEST CONDITIONS MIN MAX UNITS VGS = 0, ID = 1mA 250 - V 2N7296H 2N7296H VGS = 0, ID = 1mA 238 - V VGS(th) 2N7296D 2N7296D, R VGS = VDS, ID = 1mA 2.0 4.0 V VGS(th) 2N7296H 2N7296H VGS = VDS, ID = 1mA 1.5 4.5 V IGSSF 2N7296D 2N7296D, R VGS = 20V, VDS = 0 - 100 nA (Note 5, 6) IGSSF 2N7296H 2N7296H VGS = 20V, VDS = 0 - 200 nA (Note 2, 4, 6) IGSSR 2N7296D 2N7296D, R VGS = -20V, VDS = 0 - 100 nA (Note 2, 5, 6) Gate-Body Leakage Reverse (Note 4, 6) IGSSR 2N7296H 2N7296H VGS = -20V, VDS = 0 - 200 nA Drain-Source On-State Volts (Note 4, 6) IDSS 2N7296D 2N7296D, R VGS = 0, VDS = 200V - 25 µA (Note 5, 6) Zero-Gate Voltage Drain Current IDSS 2N7296H 2N7296H VGS = 0, VDS = 200V - 100 µA VDS(on) 2N7296D 2N7296D, R VGS = 10V, ID = 17A - 3.30 V (Note 1, 5, 6) VDS(on) 2N7296H 2N7296H VGS = 16V, ID = 17A - 4.18 V (Note 1, 4, 6) RDS(on) 2N7296D 2N7296D, R VGS = 10V, ID = 11A - 0.185 (Note 1, 5, 6) Drain-Source On Resistance (Note 1, 4, 6) RDS(on) 2N7296H 2N7296H VGS = 14V, ID = 11A - 0.234 NOTES: 1. Pulse test, 300µs max 2. Absolute value 3. Gamma = 300KRAD 300KRAD(Si) 4. Gamma = 10KRAD 10KRAD(Si) for "D", 100KRAD 100KRAD(Si) for "R". Neutron = 1E13 5. Gamma = 1000KRAD 1000KRAD(Si). Neutron = 1E13 6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS 7. Gamma data taken 11/1/89 on TA 17653 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA 19401 8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989 9. Neutron derivation, HARRIS Application note AN-8831 AN-8831, Oct. 1988 12-84 2N7296D 2N7296D, 2N7296R 2N7296R, 2N7296H 2N7296H - Registration Pending Typical Performance Characteristics 12-85