2N7002W MIL-STD-202 DS30099 - Datasheet Archive

 

NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · Low

 

2N7002W 2N7002W NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package SOT-323 G · · · · · B S D E 1.35 C C 0.40 1.15 2.00 2.20 0.65 Nominal E TOP VIEW 0.30 B D Max A A Min D Mechanical Data Dim 0.30 0.40 G 1.20 1.40 H Case: SOT-323, Molded Plastic Terminals: Solderable per MIL-STD-202 MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K72 Weight: 0.006 grams (approx.) G H 1.80 2.20 J 0.0 0.10 M K L 0.90 1.00 L 0.25 0.40 M J K 0.10 0.25 All Dimensions in mm Maximum Ratings @ TA = 25°C unless otherwise specified Symbol 2N7002W 2N7002W Units Drain-Source Voltage Characteristic VDSS 60 V Drain-Gate Voltage RGS £ 1.0MW VDGR 60 V VGSS ±20 ±40 V ID 115 73 800 mA Pd 200 1.60 mW mW/°C RqJA 625 K/W Tj, TSTG -55 to +150 °C Gate-Source Voltage Drain Current (Note 1) Continuous Pulsed Continuous Continuous @ 100°C Pulsed Total Power Dissipation (Note 1) Derating above TA = 25°C Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. Valid provided that terminals are kept at specified ambient temperature. 2. Pulse width £ 300ms, duty cycle £ 2%. DS30099 DS30099 Rev. 4P-1 1 of 3 2N7002W 2N7002W NEW PRODUCT Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition BVDSS 60 70 ¾ V VGS = 0V, ID = 10mA IDSS ¾ ¾ 1.0 500 µA VDS = 60V, VGS = 0V IGSS ¾ ¾ ±10 nA VGS = ±20V, VDS = 0V VGS(th) 1.0 ¾ 2.0 V VDS = VGS, ID =-250mA RDS (ON) ¾ 3.2 4.4 7.5 13.5 W VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A ID(ON) 0.5 1.0 ¾ A VGS = 10V, VDS = 7.5V gFS 80 ¾ ¾ mS Input Capacitance Ciss ¾ 22 50 pF Output Capacitance Coss ¾ 11 25 pF Reverse Transfer Capacitance Crss ¾ 2.0 5.0 pF Turn-On Delay Time tD(ON) ¾ 7.0 20 ns Turn-Off Delay Time tD(OFF) ¾ 11 20 ns OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = 25°C @ TC = 125°C Gate-Body Leakage ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance @ Tj = 25°C @ Tj = 125°C VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS VDS = 25V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS VDD = 30V, ID = 0.2A, RL = 150W, VGEN = 10V, RGEN = 25W Note: 1. Valid provided that terminals are kept at specified ambient temperature. 2. Pulse width £ 300ms, duty cycle £ 2%. DS30099 DS30099 Rev. 4P-1 2 of 3 2N7002W 2N7002W 0.6 Tj = 25°C RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) 7 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V 0.8 5.5V 5.0V 0.4 0.2 6 5 VGS = 5.0V 4 3 VGS = 10V 2 1 0 0 0 1 3 2 0 5 4 0.6 0.8 1.0 6 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.0 VGS = 10V, ID = 0.5A VGS = 5.0V, ID = 0.05A 1.0 0.5 0 0.4 0.2 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE NEW PRODUCT 1.0 -55 -30 -5 20 45 70 95 120 145 Tj, JUNCTION TEMPERATURE (°C) Fig. 3 On-Resistance vs Junction Temperature DS30099 DS30099 Rev. 4P-1 5 4 ID = 500mA ID = 50mA 3 2 1 0 0 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage 3 of 3 2N7002W 2N7002W