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Part Manufacturer Description Datasheet BUY
2N7002DW-TP Micro Commercial Components Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-6 visit Digikey Buy
2N7002-G Microchip Technology Inc 115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB visit Digikey Buy
2N7002DWQ-7-F Diodes Incorporated Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6 visit Digikey Buy
2N7002E-T1-GE3 Vishay Siliconix TRANSISTOR 240 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal visit Digikey Buy
2N7002K-T1-GE3 Vishay Siliconix TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND LEAD FREE PACKAGE-3, FET General Purpose Small Signal visit Digikey Buy
2N7002T Atmel Corporation Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 visit Digikey Buy

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2N7002 Datasheet

Part Manufacturer Description PDF Type
2N7002 Calogic N-Channel Enhancement-Mode MOS Transistor Original
2N7002 Central Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 115MA SOT-23 Original
2N7002 Central Semiconductor N-CHANNEL ENHANCEMENT-MODE MOSFET Original
2N7002 Central Semiconductor MOSFET, Enhancement, N Channel, 60V, SOT-23, 3-Pin Original
2N7002 Comchip Technology N-channel transistor. Drain-sourse voltage 60 V. Original
2N7002 Diodes N-CHANNEL ENHANCEMENT MODE MOSFET Original
2N7002 Diodes Short Form Selection Guide Original
2N7002 Diodes TRANS MOSFET N-CH 60V 0.115A 3SOT-23 Original
2N7002 Diodes N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Original
2N7002 Diodes TRANS/MOSFET/SMD/2N7002L/SOT23 Original
2N7002 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original
2N7002 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original
2N7002 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original
2N7002 Fairchild Semiconductor TRANS MOSFET N-CH 60V 0.115A 3SOT-23 T/R Original
2N7002 Fairchild Semiconductor N-Channel Small Signal MOSFET Original
2N7002 Galaxy Semi-Conductor Holdings Small Signal MOSFET Transistor Original
2N7002 General Semiconductor MOSFET, Enhancement, N Channel, 60V, SOT-23, 3-Pin Original
2N7002 General Semiconductor DMOS Transistors (N-Channel) Original
2N7002 Infineon Technologies N-Channel Small Signal MOSFETs (20V - 800V); Package: PG-SOT23-3; Package: SOT-23; V<sub>DS</sub> (max): 60.0 V; R<sub>DS (on)</sub> (max) (@10V): 3,000.0 mOhm; R<sub>DS (on)</sub> (max) (@4.5V): 4,000.0 mOhm; R<sub>DS (on)</sub> (max) (@2.5V): -; Original
2N7002 Kexin N-Channel MOSFET Original
Showing first 20 results.

2N7002

Catalog Datasheet MFG & Type PDF Document Tags

2N7002 NXP MARKING

Abstract: 2N7002 SO T2 2N7002 60 V, 300 mA N-channel Trench MOSFET Rev. 7 - 8 September 2011 Product data , Simplified outline 3 Graphic symbol D G SOT23 (TO-236AB) S NXP Semiconductors 2N7002 60 , Name 2N7002 TO-236AB Description plastic surface-mounted package; 3 leads Version SOT23 Type number 4. Marking Table 4. 2N7002 [1] % = placeholder for manufacturing site code Marking codes , Source-drain diode 2N7002 All information provided in this document is subject to legal disclaimers
NXP Semiconductors
Original
2N7002 NXP MARKING 2N7002 NXP nxp 2n7002 sot23 nxp 2n7002 marking nxp 2N7002 771-2N7002-T/R

2n7002

Abstract: S72 2n7002 2N7002 N-Channel Enhancement Mode DMOS Transistor Features - high input impedance - high-speed , 122 ITT INTERMETALL 2N7002 C haracteristics at Tamb = 25 °C Symbol Drain-Source Breakdown , ITT INTERMETALL 123 2N7002 Admissible power dissipation versus temperature of substrate , pulse duty factor 1%. mW 500 2N7002 A 1 2N7002 77 V ^ = 25 °C 400 0.8 lO O ( N , duty factor 1 %. Drain-source current versus gate threshold vottage mA 2N7002 mA ., 3
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OCR Scan
S72 2n7002 transistor s72 2N7002 MARKING s72 2N7002 MARKING s72 sot 23 2N7002C

Transistor SMD marking code NV

Abstract: 2n7002 /2N7002.html (1 of 2) [Feb-03-2003 6:03:00 PM] Datasheet status Product specification Page , :////Clement/public/2N7002.html (2 of 2) [Feb-03-2003 6:03:00 PM] Philips Semiconductors - 2N7002 , :////Clement/public/2N7002@old.html [Feb-03-2003 6:03:00 PM] Philips Semiconductors , Philips Semiconductors - PIP - 2N7002; N-channel enhancement mode field-effect transistor , 2N7002; N-channel Information as of 2003-01-29 My.Semiconductors.COM. Your personal service from Use
Philips Semiconductors
Original
Transistor SMD marking code NV 2N7002 PHILIPS philips 2n7002 2N7002 PHILIPS MARKING 2N7002 SMD marking

2N7002

Abstract: 2N7000 . C1 / 2N7002 Rsv. C2 / 2N7002A Rsv. F2 This Material Copyrighted By Its Respective Manufacturer , / 2N7002 Rsv. C2 / 2N7002A Rsv. F2 This Material Copyrighted By Its Respective Manufacturer Electrical , < 2.0%. 2N7000 Rev. C1 / 2N7002 Rsv. C2 / 2N7002A Rsv. F2 This Material Copyrighted By Its , Temperature 2N7000 Rev. C1 / 2N7002 Rsv. C2 / 2N7002A Rsv. F2 This Material Copyrighted By Its Respective , 2N7000 Rev. C1 / 2N7002 Rsv. C2 / 2N7002A Rsv. F2 This Material Copyrighted By Its Respective
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OCR Scan
NDS7002A FAIRCHILD 2N7002 2N700 2n7002 12 2N7002 FAIRCHILD 100C NDS7000A

2n7000

Abstract: 2N7002 FAIRCHILD MI CONDUCTOR i November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode , otherwise noted Symbol Parameter 2N7000 2N7002 NDS7002A Units VDSS Drain-Source Voltage 60 V ^DGR , , VGS=0V 2n7002 nds7002a 1 \xA Tj=125°C 0.5 mA 'gssf Gate - Body Leakage, Forward VGS=15V, Vds = 0 V 2n7000 10 nA VGS = 20 V, VDS = 0 V 2n7002 nds7002a 100 nA 'gssr Gate - Body Leakage, Reverse Vgs = -15V, Vds = 0 V 2n7000 -10 nA VGS = -20 V, VDS = 0 V 2n7002 nds7002a -100
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OCR Scan
2N700 mosfet 2N7000 MOSFET 2N7002 60V SOT-23 fairchild 2n7000 1075Q

2N7000

Abstract: 2N700 Corporation < 2N7000 Rev. C1 / 2N7002 Rev. C2 / 2N7002A Rev. F2 Electrical Characteristics t a = , 2N7002 0.6 0.09 NDS7002 0.6 0.09 2N7000 Rev. C1 / 2N7002 Rev. C2 / 2N7002A Rev. F2 , / 2N7002 Rev. C2 / 2N7002A Rev. F2 Typical Electrical Characteristics 2N 7000 / 2N 7002 / N D S 7002A , t Circuit Figure 12. S w itchin g W a v e fo rm s 2N7000 Rev. C1 / 2N7002 Rev. C2 / 2N7002A Rev. F2 2N7000 Rev. C1 / 2N7002 Rev. C2 / 2N7002A Rev. F2
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OCR Scan
7002A FE -2N7002

2n7002

Abstract: Transistor SMD marking code NV Information as of 2003-01-29 2N7002; N-channel Information My.Semiconductors.COM. Your personal service , using TrenchMOSTM1 technology. Product availability: 2N7002 in SOT23. top Features TrenchMOSTM , Publication release date Datasheet status Page count 13 File size (kB) 276 Datasheet Type number 2N7002 , ) 0.3 RDS(on)(mOhm) 5000@10V 5300@4.5V Type number 2N7002 top Products, packages, availability , PDF info File Type North number American type number 2N7002 2N7002 T/R Buy online Standard
Philips Semiconductors
Original
NV SMD TRANSISTOR 12NC ordering code philips TRANSISTOR SMD MARKING CODE TRANSISTOR SMD catalog TRANSISTOR SMD CODE PACKAGE SOT23 philips transistor smd code

2n7002

Abstract: 2N7000 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFETâ"¢II MOSFET Table 1: General Features TYPE Figure 1: Package RDS(on) Id 60 V 60 V 2N7000 2N7002 VDSS < 5 , PACKAGE PACKAGING 2N7000 2N7000G TO-92 BULK 2N7002 ST2N SOT23-3L TAPE & REEL Rev. 3 April 2005 1/11 2N7000 - 2N7002 Table 3: Absolute Maximum ratings Symbol Parameter , 5.3 Ω Ω 2N7000 - 2N7002 ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic Symbol
STMicroelectronics
Original
mosfet 2N7000 7110469/A

2N7000

Abstract: 2N7002 Semiconductor Corporation 312.5 625 417 °C/W 2N7000 Rev. C1 / 2N7002 Rev. C2 / 2N7002A Rev. F2 , 2N7000 Rev. C1 / 2N7002 Rev. C2 / 2N7002A Rev. F2 Electrical Characteristics T A = 25oC unless , %. 2N7000 Rev. C1 / 2N7002 Rev. C2 / 2N7002A Rev. F2 Typical Electrical Characteristics 2N7000 / 2N7002 , / 2N7002 Rev. C2 / 2N7002A Rev. F2 Typical Electrical Characteristics (continued) 2N7000 / 2N7002 , % Pulse Width Figure 12. Switching Waveforms 2N7000 Rev. C1 / 2N7002 Rev. C2 / 2N7002A Rev. F2
Fairchild Semiconductor
Original
nds7000 2n7000 equivalent Fairchild SOT-23 2N7002 2N7000/FAI 2n7000+complement

2N7002 NXP

Abstract: 2N7002 NXP MARKING SO T2 2N7002 60 V, 300 mA N-channel Trench MOSFET Rev. 7 - 8 September 2011 Product data , Simplified outline 3 Graphic symbol D G SOT23 (TO-236AB) S NXP Semiconductors 2N7002 60 , Name 2N7002 TO-236AB Description plastic surface-mounted package; 3 leads Version SOT23 Type number 4. Marking Table 4. 2N7002 [1] % = placeholder for manufacturing site code Marking codes , Source-drain diode 2N7002 All information provided in this document is subject to legal disclaimers
NXP Semiconductors
Original

s72 sot 23

Abstract: transistor marking s72 N & P CHANNEL MOSFETS ENHANCEMENT MODE N CHANNEL Cont. D-S Drain Voltage Current Type Marking V max A max BS870 S70 60 0.25 2N7002 S72 60 0.25 *: Pulse test width 80µs, 1% duty factor. SOT-23 Pwr , EQUIVALENTS G SEMI MOTOROLA 2N7002 2N7000 2N7002 2N7002 BS850 BS850 BS870 BS170 BS870 MMBF170L Check data before ordering. PHILIPS 2N7000 2N7002 BST110 BST120 BS170 PMBF170 SIEMENS 2N7000 2N7002 BSS110 BSS84 BS170 BSS138 SILICONIX 2N7000 2N7002 BS250 2N7019 BS170 SST7000 PACKAGE SOT-23 SOT-23 SOT-23 SOT-23 SOT
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Original
transistor marking s72 2N7002 S72 SOT-23 s72 SOT23 Transistor s72 sot23 SOT-23 marking s72 BS170 bss138

2N7002

Abstract: SO T2 3 2N7002 60 V, 300 mA N-channel Trench MOSFET Rev. 7 â'" 8 September 2011 Product , Graphic symbol drain D 3 G 1 2 SOT23 (TO-236AB) mbb076 S 2N7002 NXP , information Type number Package Name Version TO-236AB 2N7002 Description plastic , [1] 2N7002 12% [1] % = placeholder for manufacturing site code 5. Limiting values , source current pulsed; tp ≤ 10 µs; Tsp = 25 ° C - 1.2 A 2N7002 Product data sheet
NXP Semiconductors
Original

2N7002

Abstract: 2N7000 November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor , D G D G S TO-92 S 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Maximum Ratings TA = 25°C unless otherwise noted 2N7000 2N7002 NDS7002A Symbol Parameter VDSS , =125°C 2N7002 NDS7002A µA 1 TJ=125°C mA 1 µA 0.5 mA Gate - Body Leakage, Forward VGS = 15 V, VDS = 0 V 2N7000 10 nA VGS = 20 V, VDS = 0 V IGSSF 2N7002 NDS7002A
Fairchild Semiconductor
Original
2N7002/NDS7002A

2N7000

Abstract: S7002 7000 Rev. C1 / 2N7002 Rev. C2 / 2N7002A Rev. F2 Electrical Characteristics t a = 2 5 ° c Symbol , 2N7002 0.6 0.09 N D S7002 0.6 0.09 2N 7000 Rev. C1 / 2N7002 Rev. C2 / 2N7002A Rev. F2 , ariatio n w ith T em p e ra tu re 2N 7000 Rev. C1 / 2N7002 Rev. C2 / 2N7002A Rev. F2 Typical , itchin g W a v e fo rm s 2N 7000 Rev. C1 / 2N7002 Rev. C2 / 2N7002A Rev. F2 2N 7000 Rev. C1 / 2N7002 Rev. C2 / 2N7002A Rev. F2
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OCR Scan
7002N

2N1000

Abstract: M2N7002 É^Ã' National November 1995 Wjf Semiconductor" 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement , , and other switching applications. TO-92 SOT-23 2N7000 (TO-236AB) 2N7002 / NDS7002A Absolute Maximum Ratings Ta = 25°C unless otherwise noted D o hJ J s Symbol Parameter 2N7000 2N7002 NDS7002A , = 0 V 2n7002 nds7002 1 ma tj=125°c 0.5 mA 'gssf Gate - Body Leakage, Forward VGS= 15V,VDS = 0V 2n7000 10 nA VGS = 20 V, VDS = 0 V 2n7002 nds7002 100 nA 'gssr Gate - Body Leakage
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OCR Scan
2N1000 M2N7002 transistor 2n7002 national 2N7002 N7000 S0113D 50113D

2N7000

Abstract: fairchild 2n7000 November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor , D G D G S TO-92 S 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Maximum Ratings TA = 25°C unless otherwise noted 2N7000 2N7002 NDS7002A Symbol Parameter VDSS , VDS = 48 V, VGS = 0 V 2N7000 V 1 VDS = 60 V, VGS = 0 V TJ=125°C 2N7002 NDS7002A µA , 2N7000 10 nA VGS = 20 V, VDS = 0 V IGSSF 2N7002 NDS7002A 100 nA Gate - Body
Fairchild Semiconductor
Original
2N7000/BS170L

2N7000

Abstract: 2N700 November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor , D G D G S TO-92 S 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Maximum Ratings TA = 25°C unless otherwise noted 2N7000 2N7002 NDS7002A Symbol Parameter VDSS , VDS = 48 V, VGS = 0 V 2N7000 V 1 VDS = 60 V, VGS = 0 V TJ=125°C 2N7002 NDS7002A µA , 2N7000 10 nA VGS = 20 V, VDS = 0 V IGSSF 2N7002 NDS7002A 100 nA Gate - Body
Fairchild Semiconductor
Original
17VGS

ST2N

Abstract: STO-23 2N7000 2N7002 N-CHANNEL 60V - 1.8 - 0.35A SOT23-3L - TO-92 STripFETTMII POWER MOSFET , 2N7000 2N7002 2 TYPICAL RDS(on) = 1.8 @10V LOW Qg LOW THRESHOLD DRIVE 3 1 SOT23 , -92 BULK 2N7002 ST2N SOT23-3L TAPE & REEL February 2004 1/7 2N7000 - 2N7002 ABSOLUTE , Unit V V 1 1.8 2 5 5.3 2N7000 - 2N7002 ELECTRICAL CHARACTERISTICS (TCASE = 25 , . 3/7 2N7000 - 2N7002 Fig. 1: Switching Times Test Circuit For Resistive Load Fig. 3: Test
STMicroelectronics
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ST2N STO-23 ST2N transistor 2N7002 SOT23 DSS SOT23 STO23-3L

2N7002

Abstract: 2N7002 MARKING 2N7000 2N7002 N-CHANNEL 60V - 1.8 - 0.35A SOT23-3L - TO-92 STripFETTMII MOSFET Table 1: General Features TYPE Figure 1: Package RDS(on) Id 60 V 60 V 2N7000 2N7002 VDSS < 5 (@ 10V , PACKAGING 2N7000 2N7000G TO-92 BULK 2N7002 ST2N SOT23-3L TAPE & REEL Rev. 3 April 2005 1/11 2N7000 - 2N7002 Table 3: Absolute Maximum ratings Symbol Parameter Value , - 2N7002 ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic Symbol gfs (1) Parameter
STMicroelectronics
Original
codes marking st2n 2n7000 equivalents 2N7002 di transistor ST2N 2N7002 st

ST2N

Abstract: 2n7000 equivalents 2N7000 2N7002 N-channel 60V - 1.8 - 0.35A - SOT23-3L / TO-92 STripFETTM Power MOSFET Features Type VDSS RDS(on) ID 2N7000 60V , 2N7000G TO-92 Bulk 2N7002 ST2N SOT23-3L Tape & reel September 2007 Rev 8 1/14 www.st.com 14 Contents 2N7000 - 2N7002 Contents 1 Electrical ratings . . . . . . . . . . . . , . 9 2N7000 - 2N7002 1 Electrical ratings Electrical ratings Table 2. Absolute
STMicroelectronics
Original
JESD97

2N7002 marking code 72

Abstract: code for 2n7002 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7002 VGS(th) (V) ID (A) 5 @ VGS = 10 V 2N7000 rDS , for 2N7002 w = Week Code ll = Lot Traceability Dual-In-Line D1 14 D4 S1 2 13 , 3 Top View BS170 www.vishay.com 11-1 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix , 2N7000 2N7002 VQ1000J 60 60 60 60 VGSM "40 "40 "30 VGS "20 "20
Vishay Siliconix
Original
VQ1000P 2N7002 marking code 72 code for 2n7002 2N7002 Siliconix SILICONIX 2N7002 2N7002 marking code vishay 2N7000/2N7002 S-04279--R

2n7000

Abstract: 2N700 November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor , 2N7000 2N7002 NDS7002A Symbol Parameter VDSS Drain-Source Voltage 60 V VDGR , 2N7000 V 1 VDS = 60 V, VGS = 0 V TJ=125°C 2N7002 NDS7002A µA 1 TJ=125°C mA 1 , = 20 V, VDS = 0 V IGSSF 2N7002 NDS7002A 100 nA Gate - Body Leakage, Reverse VGS = -15 V, VDS = 0 V 2N7000 -10 nA VGS = -20 V, VDS = 0 V IGSSR 2N7002 NDS7002A -100
Fairchild Semiconductor
Original
CBVK741B019 PN2222N

marking BS SOT23

Abstract: 2N7000 circuits 2N7000 2N7002 N-channel 60 V, 1.8 â"¦, 0.35 A, SOT23-3L, TO-92 STripFETâ"¢ Power MOSFET Features Type VDSS RDS(on) max ID 2N7000 60 V < 5 â"¦(@10V) 0.35 A 2N7002 60 V , Packaging 2N7000 2N7000G TO-92 Bulk 2N7002 ST2N SOT23-3L Tape and reel November 2008 Rev 9 1/14 www.st.com 14 Contents 2N7000, 2N7002 Contents 1 Electrical , let o bs O 2/14 bs O 2N7000, 2N7002 1 Electrical ratings Electrical ratings
STMicroelectronics
Original
marking BS SOT23 2N7000 circuits

2N7002

Abstract: 2N7002 OptiMOSTM Small-Signal-Transistor Features · N-channel · Enhancement mode · Logic level , A 1 2 Type 2N7002 Parameter Package PG-SOT-23 Tape and Reel Information H6327: 3000 pcs , 22032012 2N7002 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction , 22032012 2N7002 Parameter Symbol , 2N7002 1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); V GS10 V 0.35 0.5 0.3 0.4
Infineon Technologies
Original
IEC61249-2-21 PG-SOT23 JESD22-A114 J-STD20 JESD22
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