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Part : 2N696 Supplier : Central Semiconductor Manufacturer : Avnet Stock : - Best Price : $7.49 Price Each : $8.49
Part : 2N6968 Supplier : Harris Semiconductor Manufacturer : Rochester Electronics Stock : 814 Best Price : $5.72 Price Each : $5.72
Part : 2N6969 Supplier : Harris Semiconductor Manufacturer : Rochester Electronics Stock : 6,612 Best Price : $10.28 Price Each : $10.28
Part : J2N696 Supplier : - Manufacturer : Bristol Electronics Stock : 3 Best Price : - Price Each : -
Part : 2N696 Supplier : Fairchild Semiconductor Manufacturer : Chip One Exchange Stock : 275 Best Price : - Price Each : -
Part : 2N696 Supplier : Central Semiconductor Manufacturer : Chip1Stop Stock : 2 Best Price : $13.8890 Price Each : $13.8890
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2N696 Datasheet

Part Manufacturer Description PDF Type
2N696 Central Semiconductor Small Signal NPN Transistor Original
2N696 Microsemi NPN Medium Power Silicon Switching Transistor Original
2N696 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package Original
2N696 Central Semiconductor Various Transistors Scan
2N696 Central Semiconductor Transistor Selection Guide Scan
2N696 Continental Device India Semiconductor Device Data Book 1996 Scan
2N696 Ferranti Semiconductors Quick Reference Guide 1985 Scan
2N696 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan
2N696 Ferranti Semiconductors Shortform Data Book 1971 Scan
2N696 General Diode Transistor Selection Guide Scan
2N696 Micro Electronics Semiconductor Devices Scan
2N696 Motorola Motorola Semiconductor Datasheet Library Scan
2N696 Mullard Quick Reference Guide 1977/78 Scan
2N696 N/A Semiconductor Master Cross Reference Guide Scan
2N696 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2N696 N/A Shortform Electronic Component Datasheets Scan
2N696 N/A Shortform Transistor Datasheet Guide Scan
2N696 N/A Vintage Transistor Datasheets Scan
2N696 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N696 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
Showing first 20 results.

2N696

Catalog Datasheet MFG & Type PDF Document Tags

2N697

Abstract: 2N696 TECHNICAL DATA 2N696 2N697 Processed per MIL-PRF-19500/99 MIL-PRF QML DEVICES NPN MEDIUM-POWER SILICON TRANSISTORS MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Total , IC = 150 mAdc, VCE = 10 Vdc 2N696 2N697 hFE 20 40 0.3 60 120 1.5 1.3 Vdc Vdc , 2 2N696, 2N697 SERIES ELECTRICAL CHARACTERISTICS (con't) Characteristics Symbol Min. Max , Transfer Ratio IC = 50 mAdc, VCE = 10 Vdc; f = 20 MHz 2N696 2N697 Output Capacitance VCB = 10 Vdc, IE = 0
New England Semiconductor
Original

2n697

Abstract: TRANSISTOR 2n697 TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N696S 2N697 2N697S MAXIMUM RATINGS Ratings Collector-Base , 120 0.3 1.5 1.3 Vdc Vdc 120101 Page 1 of 2 2N696, 2N696s, 2N697, 2N697s SERIES , 2N696,s 2N697,s 2N696,s 2N697,s Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc , Forward-Current Transfer Ratio IC = 50 mAdc, VCE = 10 Vdc; f = 20 MHz 2N696,s 2N697,s Output Capacitance VCB
Microsemi
Original
TRANSISTOR 2n697 2N697 JAN 2N697 equivalent MIL-PRF-19500/

2N697 JAN

Abstract: 2N697 TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/ 99 Devices Qualified Level 2N696 2N696S 2N697 2N697S MAXIMUM RATINGS Ratings Collector-Base , 120 0.3 1.5 1.3 Vdc Vdc 120101 Page 1 of 2 2N696, 2N696s, 2N697, 2N697s SERIES , 2N696,s 2N697,s 2N696,s 2N697,s Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc , Forward-Current Transfer Ratio IC = 50 mAdc, VCE = 10 Vdc; f = 20 MHz 2N696,s 2N697,s Output Capacitance VCB
Microsemi
Original

2n697

Abstract: TRANSISTOR 2n697 TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices 2N696 2N696S 2N697 2N697S Qualified Level MAXIMUM RATINGS Ratings Collector-Base Voltage , ) 689-0803 120101 Page 1 of 2 2N696, 2N696s, 2N697, 2N697s SERIES ELECTRICAL CHARACTERISTICS (con't , 15 mAdc 2N696,s 2N697,s 2N696,s 2N697,s 20 40 12.5 20.0 0.3 60 120 hFE VCE(sat) VBE(sat) 1.5 , Short-Circuit Forward-Current Transfer Ratio IC = 50 mAdc, VCE = 10 Vdc; f = 20 MHz 2N696,s 2N697,s Output
Microsemi
Original

2N696

Abstract: | | CONTACT US | VIEW CART | SHIPPING http://store.americanmicrosemiconductor.com/2n696.html 4/12 , 2N696 NPN Transistor 3.50 Transistors Bipolar Silicon NPN Low-Power Transistors Am. Page 1 of 1 Enter Your Part # Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N696 2N696 NP N T rans is to r Enter code INTER3 at checkout.* CUSTOMER , Available from $ 3.50 Manufacturer Partnumber: List Price: Our Price: You Save: 2N696 $ 4.38 Information
American Microsemiconductor
Original
Abstract: Submit ¡ ¡ 2N696 Availability Buy 2N696 at our online store ! 2N696 Information Cate gory » Transistors Class » Transistors; Bipolar; Si NPN Low -Power Type » Bipolar; Si NPN Low -Power 2N696 American Microsemiconductor
Original

2N696

Abstract: TRANSISTOR 2n696 2N696 NPN SILICON TRANSISTOR JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N696 is a Silicon NPN Transistor, mounted in a hermetically sealed metal package, designed for general purpose amplifier and switching applications. MAXIMUM RATINGS (TA=25°C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Power Dissipation 60 Power , 60 40 MHz 35 (SEE REVERSE SIDE) pF R0 2N696 NPN SILICON TRANSISTOR TO
Central Semiconductor
Original
TRANSISTOR 2n696

SE 442

Abstract: MARKING M1W SEMICONDUCTOR DEVICE, TRANSISTOR, .J"?!', PITCHING, MEDIUM-POWER TYPES 2N696 AND 2N697 This specification is , mKác IB = 15 mAdc 'on loff 2N696 2N697 2N696 2N697 nsec nsec jeL Vdc Vdc MUi 20 40 2.5 3.0 , j. on o iuuuo \t>cc jw.i aim j^j.Lj. FIGURE 1. Physical dimensions of transistor types 2N696 and , inch = 25.4 mm. FIGURE 2. Gage for lead and tab location for transistor types 2N696 and 2N697. J 4 , Forward-current transfer ratio 3076 VCE * 10 vdc5 *C = 10 mA(k? pulsed (see 4.4.1) hFE 2N696 2N697 40 .
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OCR Scan
SE 442 MARKING M1W MKAC 2N696 equivalent RAW MATERIAL INSPECTION procedure L-S-19500/99E L-S-19500/99D L-S-19500 MIL-STD-202 M1L-S-19500 MIL-S-19500

TRANSISTOR 2n697

Abstract: 2N696 , MEDIUM-POWER TYPES 2N696, 2N697, 2N696S and 2N697S This amendment forms a part of MIL-S-19500/99E, dated 31 , minimum to 0.75 inch maximum lead length." 1.4, add the following new type numbers: Following "2N696" add "2N696S"; following "2N697" add "2N697S". Make these same changes wherever they occur throughout , symbology. 13. Lead 1 = emitter, lead 2 = base, lead 3 = collector. 14. For transistor types 2N696S and , transistor types 2N696 and 2N697, in the TO-5 package, LL is 1.500 (38.10 mm) minimum, and 1.750 (44.45 mm
DEPARTMENT OF DEFENSE
Original

2n706

Abstract: 2N696 NPN GENERAL PURPOSE - Continued Type VCB V VCEO V Max ic mA Max VcE(sat) at hFE at Min fiat Ptot at Tamb = 25°C mW Packaga Complement V ic mA IB mA Min Max ic mA MHz ic mA 2 N3053 60 40 700 1 -4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1 -5 150 15 20 60 150 80 50 600 TOâ'"39 2N1131 2N697 60 40 500 1 -5 150 15 40 120 150 100 50 600 TO-39 2N1132 BFY51 60 30 1000 0-35 , T039 2N4037 2N696 60 40 500 1 -5 150 15 20 60 150 80 50 600 T039 2N1131 2N697 60 40 500 1 -5 150 15
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OCR Scan
BC107 BC177 BCY59 BCY79 BC178 2n706 bc107 complement 2N929 2N930

2N73A

Abstract: 2N696 TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 7MI 31. ?tW58. 2N1420. 2N1507, 2W1613, 2NI71I N-P-N SILICON TRANSISTORS B U L L E T I N N O. D L - S 6 9 3 4 7 1 , M A Y 1 9 6 3 - B E V I S 6 D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and , JEDEC TO-18 package). Device types 2N696, 2N697, 2N1420, 2N1507, 2N1613, and 2N1711 are in JEDEC TO , A L L A S . T E X A S 7 S 22 2 4-23 TYPES 2N696, 2N697, 2W17, 2N71Ö. 2N73A 2N731 N-P-N
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OCR Scan
TW58 2W17 ml907 2N956

2N404 transistor

Abstract: 80w hf audio power amplifier 225mW 3mc(21 -30 34-65 20mA Audio Ampl. 0.45* 2N696 S/NPN T05 600mW 64mc121 + 60 20-60 150mA ) G.P. and , 120 20-60 150mA High Voltage 2N696 0.30* 2N705 G/PNP T018 150mW 300mc(2) -15 25"' 10mA High Speed
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OCR Scan
ZT202 ZT203 ZTX302 2CY33 2G222 2G224 2N404 transistor 80w hf audio power amplifier 2N336A 2G371 2G381
Abstract: 2N696 MECHANICAL DATA Dimensions in mm (inches) NPN SILICON TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. FEATURES 0.89 max. (0.035) â'¢ SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.41 (0.016) 0.53 (0.021) dia. â'¢ SCREENING OPTIONS AVAILABLE 5.08 (0.200) typ. 2.54 (0.100) 2 1 APPLICATIONS: 3 , : sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6602 Issue 1 2N696 ELECTRICAL Semelab
Original

transistor t05

Abstract: TIS60m Silicon Transistors Type No. Case c ^ O =1 Maximum Ratings at 25°C amb. Characteristics » o C 11 o» O hFE 'T VCE(SAT) VCB V VCE V vEB V le A Pto. W le mA Min. Max. le mA Min. Mc/s "c mA â B mA Max. V NPN Microwave TIXS12 ZZ PE 30 15 2 0-2 10 50 20 200 50 1500à â'" â'" Power Source TIXS13 ZZ PE 30 15 2 0-2 10 50 20 200 50 1200t â'" â'" NPN 2N696 , temp 10W Complementary to 2N696 Complementary to 2N697 N.P.N. N.P.N. P.N.P. P.N.P. "i Storage time
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OCR Scan
2N698 2N1889 2N1890 2N1893 transistor t05 TIS60m 2N2192 2N2192A

2N696

Abstract: 2N696 MECHANICAL DATA Dimensions in mm (inches) NPN SILICON TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. FEATURES 0.89 max. (0.035) · SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.41 (0.016) 0.53 (0.021) dia. · SCREENING OPTIONS AVAILABLE 5.08 (0.200) typ. 2.54 (0.100) 2 1 APPLICATIONS: 3 , Document Number 6602 Issue 1 2N696 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated
Semelab
Original

BC108

Abstract: transistor bcy70 NPN LOW LEVEL Type VCB V VceO V Max Max VcE(sat) at hFE at Min fT at Pto, at Tamb = 25°C mW Package Complement 'C: mA V lc mA IB mA Min. Max. lc mA MHz lc mA 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5 150 15 20 60 150 80 50 600 TO-39 2N1131 2N697 60 40 500 1.5 150 15 40 120 150 100 50 600 TO-39 2N1132 BFY51 60 30 1000 0.35 150 15 40 150 50 , 150 600 TO-39 2N696 2N1132 50 35 600 1.5 150 15 30 90 150 600 TO-39 2N697 ZT183 45 45 500 0.4 50
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OCR Scan
BC108 transistor bcy70 to18 ZT181 BFX86 BCY42 BCY43 BFY52 BCY58
Abstract: 2N696 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 40V 5.08 (0.200) typ. IC = 0.2A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS Semelab
Original

N706A

Abstract: 2N2368 NPN GENERAL PURPOSE - Continued Type VCB V VCEO V Max ic mA Max VcE(sat) at hFE at Min fiat Ptot at Tamb = 25°C mW Packaga Complement V ic mA IB mA Min Max ic mA MHz ic mA 2 N3053 60 40 700 1 -4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1 -5 150 15 20 60 150 80 50 600 TOâ'"39 2N1131 2N697 60 40 500 1 -5 150 15 40 120 150 100 50 600 TO-39 2N1132 BFY51 60 30 1000 0-35 , T039 2N4037 2N696 60 40 500 1 -5 150 15 20 60 150 80 50 600 T039 2N1131 2N697 60 40 500 1 -5 150 15
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OCR Scan
N706A 2N2220 2N2368 2N2475 2N290 ZT182 BCY78 ZT180 ZT187 BSY95A

transistor 2n3053

Abstract: bc140 10 350 TO-18 â'" 2N1131 50 35 600 1 -5 150 15 20 45 150 â'" â'" 600 TO-39 2N696 2N1132 50 35 600 1 , '" 600 T039 2N696 2N1132 50 35 600 1 -5 150 15 30 90 150 - â'" 600 T039 2N697 ZT183 45 45 500 0-4 50 5
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OCR Scan
ZT211 2N4036 2N2102 ZT189 BC161 BCY77 transistor 2n3053 bc140 transistor BC108 ZT152 complement of 2N3053 bc141 ZT90/95 T0-18

N3053

Abstract: BC107 NPN GENERAL PURPOSE - Continued Type VCB V VCEO V Max ic mA Max VcE(sat) at hFE at Min fiat Ptot at Tamb = 25°C mW Packaga Complement V ic mA IB mA Min Max ic mA MHz ic mA 2 N3053 60 40 700 1 -4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1 -5 150 15 20 60 150 80 50 600 TOâ'"39 2N1131 2N697 60 40 500 1 -5 150 15 40 120 150 100 50 600 TO-39 2N1132 BFY51 60 30 1000 0-35 , T039 2N4037 2N696 60 40 500 1 -5 150 15 20 60 150 80 50 600 T039 2N1131 2N697 60 40 500 1 -5 150 15
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OCR Scan
ZT82 BFX85 BFX84 BCY65E 2N2270 ZT184 2N2218A

2N697

Abstract: 2N696 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX 2N 696, 2N 697 - LF amplification Amplification BF â  Switching Commutation VCER 40 V h2iE
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OCR Scan
bf 697 transistor BF 697 BF 696 OC 696 2n 697 FT2N 100MA

2N718

Abstract: SA37T TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, ZUmO, 2N150J. 2N1613. 2N1711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications from 150 ma, dc to 30 me · High Voltage * Low leakage · Useful hFE Over Wide Current , -18 package«. Device types 2N696, 2N697, 2N1420, 2N1507, 2N1613, and 2N1711 are in JEDEC TO-5 packages. g r
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OCR Scan
2NI613 SA37T 2n1711 Texas
Abstract: . Device types 2N696, 2N697, 2N1420, 2N1507, 2N1613, and 2N1711 are in JEDEC TO-5 packages. * absolute maximum ratings at 25°C free-air temperature (unless otherwise noted) 2N696 2N697 60 40 5 0.6 2N717 -
OCR Scan

2N1420

Abstract: 2N731 TYPES 2N731, 2N956, 2N1420, 2N1S07, N-P-N SILICON TRANSISTORS ¿ U t ) » ' ? J . U n - B U L L E T IN NO. DL-S 6 9 3 4 7 1 , MAY 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications from 150 ma, dc to 30 me · High Voltage · Low Leakage · Useful hF£ Over Wide Current Range * mechanical data Device types 2N717, 2N718, 2N718A, 2N730, 2N731, and 2N956 are in JEDEC TO-18 packages. Device types 2N696
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2n161 2N956 TEXAS INSTRUMENTS 100CC

transistor 2N4

Abstract: ST25C transistor , 2 N1410 A 2 N480 A , 2 N696 , 2N696 A , 2 N697 , 2 N697 A , 2 N715 2 N4 80 . 2 N696 , 2 N6 96 A, 2
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OCR Scan
transistor 2N4 ST25C transistor 2SA114 TFK 808 2N407 transistor 2N1177
Showing first 20 results.