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1 - 41 of about 41 for 2N6676 |
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First line: Silicon Power Transistors DESCRIPTION TO-3 package voltage capability switching speeds saturation voltage APPLICATIONS Designed high voltage switching applications such power supplies circuits width modulated regulators Abstract: .. SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6676 2N6677 2N6677 2N6678 2N6678 DESCRIPTION ·With TO-3 package ·High voltage capability ·Fast switching speeds ·Low saturation .. Tags: 2N6678 datasheet abstract.. |
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First line: Qualified MIL-PRF-19500/538 Devices 2N6676 2N6678 2N6691 2N6693 Qualified Level JANTX JANTXV Abstract: .. 2N6676 2N6678 2N6678 2N6691 2N6691 2N6693 2N6693 . JAN JANTX JANTXV. MAXIMUM RATINGS. Ratings Symbol 2N6676. 2N6691 2N6691 2N6678 2N6678 2N6693 2N6693 Unit. Collector-Emitter Voltage VCEO 300 400 Vdc. Collector-Base Voltage VCBO 450 650 .. Tags: 2n6691 jantxv 2N6676 2N6678 2N6691 2N6693 |
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First line: Qualified MIL-PRF-19500/538 Devices 2N6676 2N6678 2N6691 2N6693 Qualified Level JANTX JANTXV Abstract: .. 2N6676 2N6678 2N6678 2N6691 2N6691 2N6693 2N6693 . JAN JANTX JANTXV. MAXIMUM RATINGS Ratings Symbol 2N6676. 2N6691 2N6691 2N6678 2N6678 2N6693 2N6693 Unit. Collector-Emitter Voltage VCEO 300 400 Vdc. Collector-Base Voltage VCBO 450 650 .. Tags: 2n6691 jantxv 2N6678 2N6676 2N6678 2N6691 2N6693 |
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First line: 2N6676 JAN, JTX, JTXV 2N6678 JAN, JTX, JTXV 2N6691 JAN, JTX, JTXV 2N6693 JAN, JTX, JTXV Processed MIL-PRF-19500/538 MIL-PRF DEVICES Abstract: .. MAXIMUM RATINGS Ratings Symbol 2N6676. 2N6691 2N6691 2N6678 2N6678 2N6693 2N6693 Units. Collector-Emitter Voltage VCEO 300 400 Vdc. Collector-Base Voltage VCBO 450 650 Vdc. Collector-Base Voltage VCEX 450 650 Vdc .. Tags: 2N6678 2N6676 2N6678 2N6691 2N6693 |
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First line: Silicon Power Transistors DESCRIPTION With TO-3 package High voltage capability Fast switching speeds saturation voltage APPLICATIONS Designed high voltage switching applications such Off-line power supplies Converter circuits Pulse width modulated regulators Abstract: .. Silicon NPN Power Transistors 2N6676 2N6677 2N6677 2N6678 2N6678 DESCRIPTION ·With TO-3 package ·High voltage capability ·Fast switching speeds ·Low saturation voltage APPLICATIONS Designed for .. Tags: datasheet abstract.. |
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First line: CA3725 transistor MJH6678 MJH6678* nOTOROLA DTJt,3t,725M 6367254 CXSTRS/R 96D' 60516 T-33-(3 Silicon Power Transistors 2N6676, 2N6677, 2N6678, MJH6676, MJH6677, MJH6678 transistors designed high voltage switching applications such Abstract: .. D T-33- T-33- 3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Power Transistors The 2N6676, 2N6677 2N6677 , 2N6678 2N6678 , MJH6676 MJH6676 , MJH6677 MJH6677 , and MJH6678 MJH6678 transistors are designed for high voltage switching .. Tags: MJH6678* transistor MJH6678 CA3725 datasheet abstract.. |
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First line: Zz&MOSPEC SILICON POWER TRANSISTORS 2N6676,2N6677and 2N6678 transistor designed high voltage switching applications such FEATURES *Off-Line Power Supplies "Converter Circuits *Pulse Width Modulated Regulators Specification FeatureHigh Voltage Capability Fast Switching Speeds Saturation Volt Abstract: .. Zz&MOSPEC NPN SILICON POWER TRANSISTORS The 2N6676,2N6677and 2N6677and 2N6678 2N6678 transistor are designed for high voltage switching applications such as: FEATURES *Off-Line Power Supplies "Converter .. Tags: datasheet abstract.. |
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First line: Baias SILICON POWER TRANSISTORS 2N6676,2N6677and 2N6678 transistor designed high voltage switching applications such FEATURES *Off-Line Power Supplies "Converter Circuits *Pulse Width Modulated Regulators Specification FeatureHigh Voltage Capability Fast Switching Speeds Saturation Voltage Boca Abstract: .. NPN SILICON POWER TRANSISTORS The 2N6676,2N6677and 2N6677and 2N6678 2N6678 transistor are designed for high voltage switching applications such as: FEATURES *Off-Line Power Supplies "Converter Circuits .. Tags: Baias datasheet abstract.. |
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First line: 3875081 SOLID 3a7SDfll -r^^i-ur JStoKctMuf Power Transistors_?_9-2_!_ElP 2N6676, 2N6677, 2N6678, RJH6676, RJH6677, RJH6678 File Number 1165 15-A SwitchMaX Power Transistors High-Voltage N-P-N Types Off-Line Power Supplies Other High-Voltage Switching Applications Feature*: Fast switching speed High Abstract: .. _ElP 2N6676, 2N6677 2N6677 , 2N6678 2N6678 , RJH6676 RJH6676 , RJH6677 RJH6677 , RJH6678 RJH6678 File Number 1165 15-A 15-A SwitchMaX Power Transistors High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching .. Tags: 40251* datasheet abstract.. |
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First line: 2N6676, 2N6677 and.2N6678 series transistors high-voltage, high-gain, NPN, ampere switching transistors Industrial Military Service. series particularly well suited off-line (transformerless) switching power supplies operating high KHz. Other applications include Inverters, Motor Controls, Relay Sol Abstract: .. SPECIFICATIONS General The 2N6676, 2N6677 2N6677 and.2N6678 2N6678 series transistors are high-voltage, high-gain, NPN, 15 ampere switching transistors for Industrial and Military Service. The series .. Tags: datasheet abstract.. |
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First line: 6115950 MICROSEMI CORP/POWER 00507 0000507 .265" (6.7mm) .265" (6.7mm) BASE BONING AREA: Appro*. .020' (0.5 1.3mm) EMITTER BONING AREA: Apptax. .050" ,050" 13mm) EKSBB CCC6678 Abstract: .. â– Chip thickness-18 thickness-18 Â ± 2 mil 460 Â ± 50 microns â– Reference device types: 2N6676 2N6677 2N6677 2N6678 2N6678 Electrical Characteristics At 25Â °C The chip is 100% probed to the conditions and limits specified .. Tags: datasheet abstract.. |
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First line: 2N6676 Dimensions (inches). Abstract: .. 2N6676. Bipolar NPN Device. VCEO = 300V 300V IC = 15A All Semelab hermetically sealed products. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications .. Tags: 2N6676 |
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First line: documentation process conversion measures necessary comply with this document shall completed July 2009. INCH-POUND MIL-PRF-19500/538E April 2009 SUPERSEDING MIL-PRF-19500/538D June 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6676, 2N6678, 2N66 Abstract: .. SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6676, 2N6678 2N6678 , 2N6676T1, 2N6678T1 2N6678T1 , 2N6676T3, 2N6678T3 2N6678T3 , 2N6691 2N6691 , AND 2N6693 2N6693 , JAN, JANTX, JANTXV, AND JANS. This specification .. Tags: 2N6676 2N6678 2N6676T1 2N6678T1 2N6676T3 2N6678T3 2N6691 2N6693 2N6678 |
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First line: HIGH VOLTAGE/HIGH SPEED EQUIVALENT D64VS3,4, 2N6676, 2N6677 2N6678 series power transistor designed power switching applications requiring high-voltage capability, fast switching speeds low-saturation voltages. These devices optimized provide unique combination ultra-low switching losses high safe-o Abstract: .. HIGH VOLTAGE/HIGH SPEED NPN POWER TRANSISTORS Gl: EQUIVALENT D64VS3 D64VS3 ,4, 5 The 2N6676, 2N6677 2N6677 and 2N6678 2N6678 series of NPN power transistor is designed for use in power switching applications requiring .. Tags: datasheet abstract.. |
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First line: npn 1000V 100a BUW41 2N6771 BUw41b* BUW41B MAXIVOLT SERIES HIGH VOLTAGE/HIGH CURRENT SWITCHING TRANSISTORS MAXIVOLT-A series power transistors fully designed high voltage switching application. MAXIVOLT SELECTOR CHART 'C(sat) vCEV 260V 2N6686 280V 2N6687 300V 2N6688 2N6771* 2N6671 2N6674 2N6676 Abstract: .. - - - - - 2N6686 2N6686 280V 280V - - - - - - 2N6687 2N6687 300V 300V - - - - - 2N6688 2N6688 - 2N6771 2N6771 * 2N6671 2N6671 _ 2N6674 2N6674 2N6676 _ _ 450V 450V BUW40 BUW40 * 2N6738 2N6738 *      - BUW41 BUW41 * - - - -  2N6772 2N6772 * 2N6672 2N6672 _ 2N6675 2N6675 2N6677 2N6677 _  560V 560V BUW40A BUW40A " 2N6739 2N6739 .. Tags: BUW41B BUw41b* 2N6771 BUW41 npn 1000V 100a datasheet abstract.. |
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First line: JANTX 2N6340 ENGLAND SEMICONDUCTOR BIPOLAR TRANSISTOR TO-3 PACKAGE DEVICE TYPE Vceo (sus) VOLTS (max) AMPS hFE@Ic/VCE (min/max A/V) VcE(sit) @Ic/IB A/A) WATTS (MHz) 2N6032A 10-50@50/2.6 1.3@50/5 30' TO-3 2N6033A 10-50@40/2 l@40/4 30' 2N6274A 30-120@20/4 1.2@20/2 2N6275 30-120@20/4 1.2@20/2 2N6276 30 Abstract: .. 2N6326 2N6326 2N6327 2N6327 2N6338 2N6338 " 2N6340 2N6340 2N6341 2N6341 " 2N6354 2N6354 2N651O 2N651O 2N6511 2N6511 2N6512 2N6512 2N6676" 2N6677 2N6677 2N6678 2N6678 " 2N6686 2N6686 2N6687 2N6687 2N6688 2N6688 . · Tc = 25 °C h 1. "AvaIlable In JAN, JANTX, JANTXV. VCER. Typical. 7. .. 6564~93. 0000234 408 .. Tags: JANTX 2N6340 datasheet abstract.. |
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First line: TLP 535 TLP 551 IR5065 TLP 527 TLP-531 fll3b4Sfl DDOOBgM T-53--0/ HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS IMIIlllllOi Type Industry Power Dissipation VCEV VCEO VCE(SAT.) Vbe(SAT.)@Ic CASE Type (volts) (volts) (volts) (Min.) (volts) (volts) (MHz) STYLE (watts) 2N6672 2N6672 TO-3 2N6673 2N6673 TO- Abstract: .. 8.0 1.0 1.5 10 500 15 TO-3 2N6675 2N6675 2N6675 2N6675 175 650 400 650 .10 10 8.0 1.0 1.5 10 500 15 TO-3 2N6676 2N6676 175 450 300 450 .10 15 8.0 1.5 1.5 10 500 15 TO-3 2N6677 2N6677 2N6677 2N6677 175 550 350 550 .10 15 8.0 1.5 1.5 10 500 .. Tags: TLP-531 TLP 527 IR5065 TLP 551 TLP 535 datasheet abstract.. |
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First line: 2N6673 PRODUCTS CORPORATIO SEMICODUCTOR SPECIALIST DEVICE CASE EAKDOV OLTAGE Min. Max. VOLTA ax.) 26512 TO-3 26513 TO-3 26514 TO-3 26542 TO-3 26543 TO-3 26544 TO-3 Abstract: .. 10 40 5 1 1.5 2 2N6674 2N6674 TO-3 450 300 7 2 10 8 20 10 2 1 2 2N6675 2N6675 TO-3 650 400 7 2 10 8 20 10 2 1 2 2N6676 TO-3 450 300 8 3 15 8 15 3 1 2 2N6677 2N6677 TO-3 550 350 8 3 15 8 15 3 1 2 ■bôSbm 00D1D44 00D1D44 Tdû ■PPC PRODUCTS CORPORATION /7516 .. Tags: 2N6673 datasheet abstract.. |
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First line: MJ16016 2N3772 motorola mj15024 2N3055H MOTOROLA MJ15024-MJ15025 POWER TRANSISTORS BIPOLAR METAL (continued) TO-2Q4AA (FORMERLY TO-3) (continued) Resistive Switching (Case) lcCont VcEO (SUSI Device Type Watts Amps Voljs Min/Max 2N3055H 2N3055 2N3055A MJ2955 MJ2955A 20/70 20/70 20/70 MJ15015 MJ15016 Abstract: .. 3# 8 175 175 120 250 MJ11022 MJ11022 MJ11021 MJ11021 100 min 15 3# 175 275 2N6250 2N6250 8/50 10 3.5 1 10 2.5 175 300 2N6676 8 min 15 2.5 0.5 15 3 175 325 BUX13 BUX13 8 8 2.5 .8 8 8 150 350 2N6251 2N6251 2N6677 2N6677 6/50 8 min 10 15 3.5 2.5 1 0.5 10 15 2.5 3 .. Tags: MJ15024-MJ15025 2N3055H MOTOROLA mj15024 2N3772 motorola MJ16016 datasheet abstract.. |
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First line: 2N6562* DEVICE CASE EAKDOV OLTAGE Min. Max. VOLTA ax.) 2N6512 TO-3 2N6513 TO-3 2N6514 TO-3 2N6542 TO-3 2N6543 TO-3 2N6544 TO-3 2N6546 TO-3 2N6547 TO-3 Abstract: .. 10 40 5 1 1.5 2 2N6674 2N6674 TO-3 450 300 7 2 10 8 20 10 2 1 2 2N6675 2N6675 TO-3 650 400 7 2 10 8 20 10 2 1 2 2N6676 TO-3 450 300 8 3 15 8 15 3 1 2 2N6677 2N6677 TO-3 550 350 8 3 15 8 15 3 1 2 bflSbni DDOltm TOÛ ■PRODUCTS CORPORATION /7516 .. Tags: 2N6562* datasheet abstract.. |
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First line: THOMSON/ DISTRIBUTOR SflE =J0ata73 [][][]S73D TCSK Bipolar Power Transistors High-Voltage (Continued) VcE(sat)-V vCEO(sus) VcEV(sus) ft(Typ) JEOEC Typo Package 2N6673 SwitchMax FAMILY (n-p-n) 150W BUX42 15-45 2N6542 12-60 Abstract: .. min. 8 3 3 8 1.5 2N6546 2N6546 300 650 175 12-60 5 2 1.5 10 2 2N6674 2N6674 "* 300 450 175 8-20 10 2 1 10 2 2N6676"* 300 450 175 8 min. 15 3 1 15 3 TIP562 TIP562 300 - 100 20 min. 1 4 2 15 5 20 TO-204AA TO-204AA / BUX13 BUX13 325 400 â–¡ 150 8 min. 8 4 1.5 8 1.6 .. Tags: datasheet abstract.. |
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First line: switching performance high voltage current Vcev. lc(sat) 100% testing switching parameters, including turn-off time saturation voltage, provide limit values worst-case design Controlied-lifetime production process provide higher gain given base width assure stable current gain during operation eleva Abstract: .. high-voltage switching applications lc sat 5 A 10 A 15 A 450 V 2N6671 2N6671 2N6674 2N6674 2N6676 VCEV 550 V 2 N6672 N6672 2N6677 2N6677 650 V 2N6673 2N6673 2N6675 2N6675 2 N 6678 CHARACTERISTIC TC Â °C LIMITS UNITS 'CEVa 25 0.1 0.1 0.1 mA >100 .. Tags: datasheet abstract.. |
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First line: MflE 0000MH5 MSMLB, sehelab LTDT^'t BI-POLAR TRANSISTORS (CECC HIGH REL) HIGH ENERGY Type Number Code Package Vceo (conti Vce/Ic 2N6589 T061 7-35 2N6590 T061 7-35 2N6594 15-200 2.5M 2N6609 5min 4/16 2N6653 10min 5/15 Abstract: .. 150 2N6674 2N6674 HR NPN T03 300 15 8-200 2/10 15M 175 2N6675 2N6675 HR NPN T03 400 15 8-200 2/10 15M 175 2N6676 HR NPN T03 300 15 8min 3/15 15M 175 2N6677 2N6677 HR NPN T03 350 15 8min 3/15 15M 175 2N6678 2N6678 REQ NPN T03 400 15 8min .. Tags: datasheet abstract.. |
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First line: 40363 MAXIMUM MINGS ELECTRICAL iRACTERISTICS DEVICE TYPE POLARITY WATTS AMPS BVcbo BVce BVebo MIN. AMPS *KHZ CASE 2N6676 2N6677 2N6678 2N6738 15.0 15.0 15.0 8.00 15.0 15,0 15.0 5.00 T0220 2N6739 2N6740 2N6751 2N6752 8.00 8.00 10.0 10.0 5.00 5.00 5.00 5.00 T0220 T0220 2N6753 2N6754 2N6834 2N6835 10.0 Abstract: .. POLARITY WATTS lc AMPS BVcbo BVce BVebo hre MIN. le AMPS VcE f MHZ *KHZ CASE 2N6676 2N6677 2N6677 2N6678 2N6678 2N6738 2N6738 NPN NPN NPN NPN 175 175 175 100 15.0 15.0 15.0 8.00 450 550 650 450 300 350 400 300 8 8 8 8 8 8 8 10 15 .. Tags: 40363 40362 40323 datasheet abstract.. |
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First line: 2N6686 JANTX 2N6340 ENGLAND SEMICONDUCTOR BIPOLAR TRANSISTOR TO-3 PACKAGE DEVICE TYPE Vceo (sus) VOLTS (max) AMPS hFE@Ic/VCE (min/max A/V) ^CE(Mt) @Ic/IB A/A) WATTS (MHz) 2N6032A 10-50@50/2.6 1.3@50/5 30' TO-3 2N6033A 10-50@40/2 l@40/4 2N6274A 30-120@20/4 1.2@20/2 2N6275 30-120@20/4 1.2@20/2 Abstract: .. 2N6326 2N6326 2N6327 2N6327 2N6338 2N6338 " 2N6340 2N6340 2N634 2N634 I " 2N6354 2N6354 2N651O 2N651O 2N6511 2N6511 2N6512 2N6512 2N6676" 2N6677 2N6677 2N6678 2N6678 " 2N6686 2N6686 2N6687 2N6687 2N6688 2N6688 . 30-120@20/4 30-120@20/4 40-150@515. 1.5@2012 I.S@2012 1.5@IS/2. 30-150@5/5 6 .. Tags: JANTX 2N6340 2N6686 datasheet abstract.. |
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First line: ptc 205 ptc b TRANSISTOR 431p MICROSEMI CORP/POWER bllSTSG 00003b2 Darlington Transistors TQ-204MA (TO-3) tw^- Part Number Amps VCEO(SUS) (8AT) Volts (Typical) Switch Time Watts Circuit Diagram Technical Publication 10002 10003 30-300 10002/03 10006 10007 30-300 10006/07 6251 6252 6253 10-120 Consul Abstract: .. .0 8-20 0.6 2.5 0.5 175  2N6674 2N6674 /75 2N6675 2N6675 10 400 1,0 8-20 0.6 2.5 0.5 175  2N6674 2N6674 /75 2N6676 15 300 1.5 8-20 0.6 2.5 0.5 175  2N6676/78 2N6677 2N6677 15 350 1.5 8-20 0.6 2.5 0.5 175  2N6676/78 2N6678 2N6678 .. Tags: TRANSISTOR 431p ptc b ptc 205 datasheet abstract.. |
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First line: 2N6575 Type* Compi meni (Volto) (Min-Max VCE(SAT) ale/vet A/V) llGEV TC-2S" (Watts) ll/b @VCE 1*ec (A@V) (Mz) S@A/A) IOFF s@A/A) 2N5804 2N5805 40853 375(VCER) 10-10005/4 10-10005/4 >10@5/4 2@5/4 @300 10450 2.2@50 @5/.5 @5/.5 @5/,5 2N6249 2N6250 2N6251 40854 2N6542 2N6543 2N6544 2NS545 2N6546 Abstract: .. 4 2.9 05/1 2,9 Ð’ ©5/1 1.9 Ð’ ©5/1 2N6653 2N6653 2N6654 2N6654 2N6655 2N6655 2N6674 2N6674 2N6675 2N6675 2N6676 2N6677 2N6677 2N6678 2N6678 MJ13330 MJ13330 MJ13331 MJ13331 300 350 400 300 400 300 350 400 200 250 20 20 20 15 15 15 15 15 20 20 >10Ð’ ®15/5 >10Ð’ ®15/5 >10Ð’ ®15 .. Tags: 2N6575 datasheet abstract.. |
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First line: 2n2369 avalanche 2N4949 2N7373 Open Project Status Spec Tech Action Abstract: .. 538 F GC 2N6676 ADD RAD QUALITY LEVELS AND GROUP D FD TO EDIT 15 SEP 2010 2/22/2010 5961-2010-058. 545 H GC 2N5151 2N5151 GROUP D CORRECTION ID TO EDIT 10 SEP 2010 6/17/2010 5961-2010-099. 552 F RK POWER BURN .. Tags: 2N7373 2N4949 2n2369 avalanche datasheet abstract.. |
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First line: switching performance high voltage current Vcev. lc(sat) 100% testing switching parameters, including turn-off time saturation voltage, provide limit values worst-case design Controlied-lifetime production process provide higher gain given base width assure stable current gain during operation eleva Abstract: .. high-voltage switching applications lc sat 5 A 10 A 15 A 450 V 2N6671 2N6671 2N6674 2N6674 2N6676 VCEV 550 V 2 N6672 N6672 2N6677 2N6677 650 V 2N6673 2N6673 2N6675 2N6675 2 N 6678 CHARACTERISTIC TC Â °C LIMITS UNITS 'CEVa 25 0.1 0.1 0.1 mA >100 .. Tags: datasheet abstract.. |
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First line: HIGH VOLTAGE/HIGH SPEED JEDEC EQUIVALENT 2N6676, D64VS series power transistors designed power switching applications requiring high-voltage capability, fast switching speeds low-saturation voltages. These devices optimized provide unique combination ultra-low switching losses high safe-operating ar Abstract: .. HIGH VOLTAGE/HIGH SPEED NPN POWER TRANSISTORS JEDEC EQUIVALENT - 2N6676, 77, 78 The D64VS D64VS series of NPN power transistors is designed for use in power switching applications requiring high-voltage .. Tags: datasheet abstract.. |
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First line: 2N6575 ENGLAND SEMICONDUCTOR bSb4n3 OQQQQSb TO-3 Case Case VCE0 (SAT) (SAT) ls/b Comple- (SUS) (MAX) IC/VCE IC/lB IC/VCE ICEV IC/lB tOFF IC/lB Type ment (min-max A/V) A/A) @A/V) @A/A) (Watts) (MHz) A/A) (pis A/A) 2N5933d 2@20/1 5@110 6@23 20/1 9@20/1 2N5934d 2@20/1 5@150 7.6@23 6@20/1 9@30/1 2N5935d Abstract: .. ®10/2 2N6675 2N6675 400 15 8-20@10/2 5Ð’ ® 15/5 1.5Ð’ ®10/2 1Ð’ ®650 175 5 9Ð’ ®30 15 7@10/2 3Ð’ ®10/2 2N6676 300 15 >8Ð’ ®15/3 1 5@15/3 1.5Ð’ ®15/3 1Ð’ ®450 175 5 9Ð’ ®30 15 7Ð’ ®15/3 3@15/3 2N6677 2N6677 350 15 >8@15/3 1 5@15/3 .. Tags: 2N6575 datasheet abstract.. |
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First line: 2N6276 2N6352* tastni ooooa^s -sa^Err.** products corp "ff-v*- TYPE CASE JCTMa EAKDOW )LTAGES Min. Max. 2N2102 TO-5 Abstract: .. 850 400 8 2 3 2N6560 2N6560 TO-3 450 450 5 2 5 2N6562 2N6562 TO-61 TO-61 * 450 450 5 2 5 2N6563 2N6563 | TO-61 TO-61 x 300 300 5 2 5 2N6676 TO-3. 450 300 8 3 15 2N6677 2N6677 TO-3. 550 350 8 3 15 2N6678 2N6678 TO-3. 650 400 8 3 15 2N6691 2N6691 TO-611 TO-611 450 300 8 3 15 2N6692 2N6692 .. Tags: 2N6352* 2N6276 datasheet abstract.. |
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First line: 2N6193U3 2N7368 1N1614 Diodes MICROSEMI 1N6761-1 transistor 2N4033 QML-9500-19 2/2004 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 2N2432 2N2481 2N3902 2N3996 2N6193 2N9193U3 M19500/483-02 Abstract: .. 2N6676, 2N6678 2N6678 538 X X X X. 2N6689 2N6689 - 2N6690 2N6690 537 X X X X. 2N6691 2N6691 , 2N6693 2N6693 538 X X X X. 2N6764 2N6764 , 2N6766 2N6766 , 2N6768 2N6768 , 2N6770 2N6770 543 X X X X. 2N682 2N682 , 2N683 2N683 , 2N685 2N685 - 2N692 2N692 108 X X X. 2N696 2N696 - 2N697 2N697 & S 99 X X. 2N6987 2N6987 , 2N6987U 2N6987U & 2N6988 2N6988 .. Tags: transistor 2N4033 MICROSEMI 1N6761-1 1N1614 Diodes 2N7368 2N6193U3 PPS 10-3900 System Power-One PLS36r MICROSEMI 2N2920 MICROSEMI 2N2222A microsemi 1n6642 1n4938 M19500/483 J 2N918 J 2N706 J 2N5581 2N6990 2N6989 2N2432 2N2481 2N3902 2N3996 2N6193 2N9193U3 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 |
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First line: 2N6575 ENGLAND SEMICONDUCTOR bSb4clc13 OOQOOSb TO-3 Case Case VCE0 (sat) (sad ls/b Comple- (sus) (MAX) IC/VCE IC/VCE ICEV IC/lB (OFF IC/IB Type ment (min-max a/v) A/A) A/V) 0A/A) (Watts) (MHz) iptS A/A) A/A) 2N5933d 20-100020/4 2020/1 2@20/1 50110 6023 6020/1 9020/1 2N5934d 2020/1 2@20/1 5@150 7.602 Abstract: .. 2N6675 2N6675 400 15 8-20010/2 5015/5 1.5010/2 10650 175 5 9030 15 7010/2 3010/2 2N6676 300 15 >8015/3 1 5@15/3 1.5015/3 10450 175 5 9030 15 7015/3 3015/3 2N6677 2N6677 350 15 >8Â ® 15/3 1 5015/3 1 5@15/3 10550 .. Tags: 2N6575 datasheet abstract.. |
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First line: 2N3286 GENERAL 3918590 GENERAL SEMICONDUCTOR AMPS 02095 r-35 DEVICE TYPE 2N6546 2N6547 2N6676 2N6677 2N6678 2N6691 Abstract: .. J> 3918590 GENERAL SEMICONDUCTOR 95D le = 15 AMPS 02095 D r-35 r-35 DEVICE TYPE 2N6546 2N6546 2N6547 2N6547 2N6676 2N6677 2N6677 2N6678 2N6678 2N6691 2N6691 2N6692 2N6692 2N6693 2N6693 2N6920 2N6920 2N6920A 2N6920A 2N6921 2N6921 2N6921A 2N6921A 2N698 2N698 Û 2N6980A 2N6980A 2N6981 2N6981 2N6991A 2N6991A .. Tags: 2N3286 datasheet abstract.. |
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First line: 6856191 PRODUCTS CORP BREAKDOWN Number Types 00771 3-Of SAT, VOLTAGES (Max.) TYPE CASE Min. Max. 2N2102 TO-5 '' Abstract: .. .4 2N6562 2N6562 TO-611 TO-611 450 450 5 2 5 10 40 5 1.0 0.75 1.4 2N6563 2N6563 TO-611 TO-611 300 300 5 2 5 10 40 5 1.0 0.75 1.4 2N6676 TO-3. 450 300 8 3 15 8 15 3.0 1.0 1.5 2N6677 2N6677 TO-3. 550 350 8 3 15 8 15 3.0 1.0 1.5 2N6678 2N6678 TO-3. 650 400 8 3 15 .. Tags: 2N6278 datasheet abstract.. |
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First line: YTFP453 2n6923b 2SA1091 2N718A 2N769 Type: VNL005A Notes: Breakdown Voltage: Continuous Current: RDS(on) Ohm: Trans Conductance Mhos: Trans Conductance Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching Case Style: TO-204AA/TO-3 Polarity Abstract: .. STI Type: 2N6676 Notes: Polarity: NPN Power Dissipation: 175 VCEV: 450 VCEO: 300 ICEV: 450 ICEV A: .10 hFE: 15 hFE A: 8.0 VCE: 1.5 VBE: 1.5 IC: 10 COB: 500 fT: 15 Case Style: TO-204AA TO-204AA /TO-3: Industry .. Tags: 2N769 2N718A 2SA1091 2n6923b YTFP453 2N6609M |
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First line: BD263 dk52 BD699* BD262 DK53 Bipolar Transistors Cross Reference INDUSTY STANDARD REPLACEMENT NEAREST PREFERRED INDUSTY STANDARD REPLACEMENT NEAREST PREFERRED 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2 Abstract: .. 2N6676 BUF420M BUF420M 2N6677 2N6677 BUF420M BUF420M 2N6678 2N6678 BUF420M BUF420M 4/35 INDUSTY STANDARD ST NEAREST .. Tags: DK53 BD262 BD699* dk52 BD263 weight transducer transistors BDV64B TIPL763A* TIPL763 TIP75C* TIP75 TIP74C tip74 TIP73C tip73a* TIP63 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240 2N3419 2N3420 2N3421 2N3439 2N3440 2N3445 2N3446 |
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First line: BD699 bdx65b MJ2955 mje102 DK53 BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240 2N3419 2N34 Abstract: .. 2N6676 BUF420M BUF420M 2N6677 2N6677 BUF420M BUF420M 2N6678 2N6678 BUF420M BUF420M 2N6702 2N6702 BUV26 BUV26 2SA489 2SA489 BD242B BD242B 2SA490 2SA490 BD242B BD242B .. Tags: DK53 mje102 MJ2955 bdx65b BD699 weight transducer upd6254cx* transistor 2sk2176 TIPL790 TIPL763A TIPL763* TIP75C* TIP74C tip74 TIP73C tip73a* 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240 2N3419 2N3420 2N3421 2N3439 2N3440 2N3445 2N3446 |
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First line: 2N3055 transistor 2SA1046 BUV48I BUV18A* buv18a BIPOLAR TRANSISTOR INTRODUCTION BIPOLAR CROSS REFERENCE order improve overall service, SGS-THOMSON introduced system preferred transistor sales types. following cross-reference intended guide identify sales types that suitable replacements application. Abstract: .. 2N6676 2N6678 2N6678 2N6678 2N6678 . 2N6677 2N6677 2N6678 2N6678 2N6678 2N6678 . 2N6678 2N6678 2N6678 2N6678 2N6678 2N6678 . 2N6702 2N6702 2N6702 2N6702 BUV26 BUV26 . 2N6935 2N6935 2N6935 2N6935 2N6935 2N6935 . 2NS671 2NS671 BUX10 BUX10 BUX10 BUX10 . 2NS672 2NS672 BUX10 BUX10 BUX10 BUX10 . 2NS684 2NS684 2N5684 2N5684 MJ14003 MJ14003 . 2NS974 2NS974 MJE2955T MJE2955T MJE2955T MJE2955T .. Tags: buv18a BUV18A* BUV48I transistor 2SA1046 2N3055 transistor mje29 transistor mj10005 transistor bu932 transistor BDX94 transistor BDV95 transistor BD912 transistor BD901 transistor bd610 transistor BD312 transistor BD245 transistor bd170 datasheet abstract.. |
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First line: MP8706 bt1490 BT808 1N5004 BT1690 AMER PHILIPS/DISCRETE bbS3131 aOlbSbH T-Ol-oX INDUSTRY PART NUMBER NEAREST EQUIV. EQUIV. PKG. INDUSTRY PART NUMBER NEAREST EQUIV. EQUIV. PKG. 0105-50 BLU52 1N321 BYW56 0204-50 BLU52 1N321A BYW56 0510-25 BLV97 1N322 BYW56 12F5 BYX99-300 1N322A BYW56 Abstract: .. 32 2N6674 2N6674 BUS23A BUS23A 43 2N6343 2N6343 BT138-500 BT138-500 32 2N6675 2N6675 BUS23B BUS23B 43 2N6343A 2N6343A BT138-500 BT138-500 32 2N6676 BUS23A BUS23A 43 2N6344 2N6344 BT138-600 BT138-600 32 2N6677 2N6677 BUS23A BUS23A 43 2N6344A 2N6344A BT138-600 BT138-600 32 2N6705 2N6705 BCX55 BCX55 SOT-89 SOT-89 58 2N6345 2N6345 BT138-800 BT138-800 .. Tags: BT1690 1N5004 BT808 bt1490 MP8706 datasheet abstract.. |
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