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2N6667 Datasheet

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2N6667 N/A Transistor Shortform Datasheet & Cross References
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1 pages,
72.93 Kb

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2N6667 N/A Shortform Transistor PDF Datasheet
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1 pages,
162.39 Kb

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2N6667 N/A Transistor Replacements
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1 pages,
86.45 Kb

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2N6667 N/A Transistor Replacements
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1 pages,
85.7 Kb

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2N6667 N/A Transistor Replacements
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1 pages,
69.02 Kb

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2N6667 Motorola Motorola Semiconductor Data & Cross Reference Book
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7 pages,
310.38 Kb

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2N6667 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Bipolar Power, NPN, 10A, 60V, Pkg Style TO220
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1 pages,
58.14 Kb

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2N6667 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
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1 pages,
35.22 Kb

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2N6667 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data)
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1 pages,
114.03 Kb

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2N6667 N/A Semiconductor Master Cross Reference Guide
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1 pages,
118.71 Kb

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2N6667

Catalog Datasheet Results Type PDF Document Tags
Abstract: 2N6667 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. class="highlight">2N6667 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Class » Darlington Transistors Type » PNP Buy 2N6667 at our online store! 2N6667 , : 2N6667 Information Did you Know. AMS has access to a network of more than 230,645,000 electronic components? Combine that Products Search for Parts Request a Quote Test Houses 2N6667 Specifications ... Original
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2 pages,
263.28 Kb

2N6667 2N6667 abstract
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Abstract: 0.55 M 2.48 2.98 O 3.70 3.90 2N6666 2N6666, 2N6667.2N6668 PNP ELECTRICAL CHARACTERISTICS ( Tc = 25°C , (Min)-2N6666 -2N6666 = 60 V (Min) - 2N6667 = 80 V (Min) - 2N6668 2N6668 base o * Collector-Emitter Saturation Voltage VCE(sat) = 2 0 V (Max ) @ lc = 3 0 A - 2N6666 2N6666 = 2.0 V (Max.) @ lc = 5.0 A - 2N6667, 2N6668 2N6668 * DC , emitter PNP 2N6666 2N6666 2N6667 2N6668 2N6668 Characteristic Symbol 2N6666 2N6666 2N6667 2N6668 2N6668 Unit Collector-Emitter , Sustaining Voltage (1) (lc = 200 mA, lB = 0 ) 2N6666 2N6666 2N6667 2N6668 2N6668 Collector Cutoff Current (VCE-40V VCE-40V, lB = ... OCR Scan
datasheet

3 pages,
151.56 Kb

2N6388 2N6387 2N6386 2N6667 2N6668 2N6666 datasheet abstract
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Abstract: 2.20 2.97 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 2N6666 2N6666, 2N6667.2N6668 PNP ELECTRICAL CHARACTERISTICS , 60 V (Min) - 2N6667 = 80 V (Min) - 2N6668 2N6668 base o * Collector-Emitter Saturation Voltage VCE(sat) = 2 0 V (Max ) @ lc = 3 0 A - 2N6666 2N6666 = 2.0 V (Max.) @ lc = 5.0 A - 2N6667, 2N6668 2N6668 * DC Current Gain , PNP 2N6666 2N6666 2N6667 2N6668 2N6668 Characteristic Symbol 2N6666 2N6666 2N6667 2N6668 2N6668 Unit Collector-Emitter Voltage , Collector - Emitter Sustaining Voltage (1) (lc = 200 mA, lB = 0 ) 2N6666 2N6666 2N6667 2N6668 2N6668 Collector Cutoff ... OCR Scan
datasheet

3 pages,
155.89 Kb

LDLB 2N6666 2N6388 2N6387 2N6386 2N6667 2N6668 datasheet abstract
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Abstract: ) - 2N6667 - 8 0 Vdc (Min) - 2N6668 2N6668 · Low Collector-Emitter Saturation Voltage - VcE(sat) = 2 Vdc , B Compact Package · Complementary to 2N 6387,2N6388 2N6388 2N6667 2N6668 2N6668 PN P SILIC O N DARLINGTON PO W , Temperature Range Symbol VCEO VCB Veb lc 2N6667 60 60 5 10 15 250 65 0.52 2 0.016 2N6006 2N6006 80 80 , 2N6667 2N6668 2N6668 'ELE CT RIC A L C H A R A C T E R IST IC S (T c - 25°C unless otherwise noted , ) 1.5 Vdc, TC - 125°C) 1 .5 Vdc, TC - 125"C) 2N6667 2N6668 2N6668 2N6667 2N6668 2N6668 2N6667 2N6668 2N6668 2N6667 2N6668 2N6668 VC ... OCR Scan
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4 pages,
151.41 Kb

2N6667 2N6668 2N6388 2N6667 abstract
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Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6667/D 2N6609 2N6609 (See2N3773 , Voltage - @ 200 mAdc V cEO (sus) = 60 Vdc (Min) - 2N6667 = 80 Vdc (Min) - 2N6668 2N6668 Low Collector-Emitter , Temperature Range Symbol VCEO VCB V eb 'c 2N6667 60 60 5 10 15 250 65 0.52 > 0.016 2N6668 2N6668 80 80 , °C /W °c /w REV 1 © Motorola, Inc. 1995 (M) M O TO RO LA 2N6667 2N6663 2N6663 *ELECTRICAL , 125°C) Vdc, Tc = 125°C) 2N6667 2N6668 2N6668 2N6667 2N6668 2N6668 'CEX - - - - - 300 300 3 3 5 |iA dc m Adc ... OCR Scan
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6 pages,
146.54 Kb

2n6609 2N6667/D 2N6609 2N6667/D abstract
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Abstract: amplifier and low speed switching applications. 2N6667 2N6668 2N6668 PNP SILICON DARLINGTON POWER TRANSISTORS , Adc Collector-Emitter Sustaining Voltage - @ 200 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6667 = 80 Vdc , (1) Rating Symbol VCEO VCB VEB IC IB 2N6667 60 60 2N6668 2N6668 80 80 Unit Vdc Vdc Vdc Adc , Number: 2N6667/D ннннннннннннннннннннннннннннннннн нннннннннннннннннннннн ннннн нннннн ннн , Case 1.92 62.5 _C/W _C/W Thermal Resistance, Junction to Ambient 2N6667 2N6668 2N6668 *ELECTRICAL ... Original
datasheet

5 pages,
83.04 Kb

2N6667 2N6668 2N6667 abstract
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Abstract: Transistors_-- 2N6666 2N6666, 2N6667, 2N6668 2N6668 File Number 1069 10-Ampere P-N-P Darlington Power Transistors 40-60-80 Volts, 65 Watts Gain of 1000 at3A(2N6666 2N6666) Gain of 1000 at 5 A (2N6667, 2N6668 2N6668) Features: - Operates , 2N6666 2N6666, 2N6667 and 2N6668 2N6668* are monolithic silicon p-n-p Darlington transistors designed for low- and , 610. MAXIMUM RATINGS, Absolute-Maximum Values: 2N6666 2N6666 2N6667 2N6668 2N6668 • VCB0 , Transistors 2N6666 2N6666, 2N6667, 2N6668 2N6668 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tq) =25°CUniess ... OCR Scan
datasheet

5 pages,
269.74 Kb

0810 GL 2N6386 2N6387 2N6388 2N6666 2N6667 2N6668 54JA TA8204 tektronix p6019 N6666 2n6387 rca TA8487 2N6386-2N6388 ta8203 datasheet abstract
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Abstract: ON Semiconductort 2N6667 2N6668 2N6668 Darlington Silicon Power Transistors . . . designed for , Adc Collector╜Emitter Sustaining Voltage - @ 200 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6667 = 80 Vdc , Collector╜Emitter Voltage 2N6667 2N6668 2N6668 Unit VCEO 60 80 Vdc Collector╜Base Voltage VCB , , LLC, 2001 March, 2001 ╜ Rev. 3 1 Publication Order Number: 2N6667/D 2N6667 2N6668 2N6668 ннн , ) (IC = 200 mAdc, IB = 0) 2N6667 2N6668 2N6668 VCEO(sus) 60 80 - - Vdc Collector Cutoff ... Original
datasheet

8 pages,
72.15 Kb

MSD6100 2N6668 2N6667 2N6388 2N6387 1N5825 20000 watt schematics power amp 2N6667 abstract
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Abstract: ON Semiconductor ) 2N6667 2N6668 2N6668 Darlington Silicon Power Transistors . . . designed for , Adc Collector╜Emitter Sustaining Voltage - @ 200 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6667 = 80 Vdc , Collector╜Emitter Voltage 2N6667 2N6668 2N6668 Unit VCEO 60 80 Vdc Collector╜Base Voltage VCB , , LLC, 2002 April, 2002 ╜ Rev. 4 1 Publication Order Number: 2N6667/D 2N6667 2N6668 2N6668 ннн , ) (IC = 200 mAdc, IB = 0) 2N6667 2N6668 2N6668 VCEO(sus) 60 80 - - Vdc Collector Cutoff ... Original
datasheet

8 pages,
70.41 Kb

MSD6100 2N6388 2N6387 1N5825 2N6667 2N6668 2N6667 abstract
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Abstract: 2N6667 2N6667G 2N6668 2N6668 2N6668G 2N6668G Package TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free) Shipping 50 , 2N6667, 2N6668 2N6668 Darlington Silicon Power Transistors Designed for general-purpose amplifier and low , Collector-Emitter Sustaining Voltage - @ 200 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6667 = 80 Vdc (Min) - 2N6668 2N6668 Low , 1 Publication Order Number: 2N6667/D ннннннннннннннннннннннннннннннннн , Emitter-Base Voltage Rating Symbol VCEO VCB VEB IC IB 2N6667 60 60 2N6668 2N6668 80 80 Unit Vdc Vdc Vdc Adc 5.0 10 15 ... Original
datasheet

6 pages,
147.18 Kb

2N6667 2N6668 2N6387 2N6388 2N6667 abstract
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Abstract: File Num ber 1069 2N6666 2N6666, 2N6667, 2N6668 2N6668 10-Ampere P-N-P Darlington Power Transistors 40-60-80 Volts, 65 Watts Gain of 1000 at 3 A (2N6666 2N6666) Gain of 1000 at 5 A (2N6667, 2N6668 2N6668) Features , -3 M 6 S The 2N6666 2N6666, 2N6667 and 2N6668 2N6668* are m onolithic silicon p-n-p Darlington transistors , , Absolute-Maximum Values: 2N6666 2N6666 -4 0 -4 0 2N6667 -6 0 -6 0 -6 0 -6 0 -5 -1 0 -1 5 -0 .2 5 65 - - 65 to +150 , accordance with JEDEC registration data format (JS-6 RDF-4). 2-182 2N6666 2N6666, 2N6667, 2N6668 2N6668 ELECTRICAL ... OCR Scan
datasheet

4 pages,
214.18 Kb

TA8204 RCA 2n6388 TA8487 TA8203 2n6667 2N6386-2N6388 2N6666 2N6667 2N6668 2N6666 abstract
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Over 1.1 million files (1986-2014): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
Search Criteria: PartType = PNP Transistor, VCE(sat) @ IB = 0.01 mAmps Part No Type Package Power (Watts) IC (Amps) BVCBO (Volts) Vceo (Volts) Vebo (Volts) 2N6667 PPC PNP TO-220 STD 65 10 60 60 5 2N6668 2N6668 2N6668 2N6668 PPC PNP TO-220 STD 65 10 80 80 5
www.datasheetarchive.com/files/microsemi/products/pnp/207_0.01.htm
Microsemi 04/01/1999 2.68 Kb HTM 207_0.01.htm
2N6667 (#24431) PNP Transistor Division PPC Inc. Datasheet (none) Mil-Spec (none) Prod-Class (none) Shipping (none) Qual Data (none) Absolute Maximum Ratings Symbol Max Unit Power Dissipation
www.datasheetarchive.com/files/microsemi/products/24431-v1.htm
Microsemi 08/12/1999 8.35 Kb HTM 24431-v1.htm
STD 65 8 40 40 5 2N6667 TO-220 STD 65 10 60 60
www.datasheetarchive.com/files/microsemi/products/pnp/27_65-v1.htm
Microsemi 07/12/1999 11.49 Kb HTM 27_65-v1.htm
2N6667 PartID: 24431 | Rev: 1/4/99 PPC Inc. Package: TO-220 (STD-Thru Hole) PNP Transistor 65 Watts 10 Amps Maximum Ratings
www.datasheetarchive.com/files/microsemi/products/24431.htm
Microsemi 04/01/1999 5.46 Kb HTM 24431.htm
Microsemi PartNo like 2N66 PartNo Division PartType PDF 2N6609 2N6609 2N6609 2N6609 PPC Inc. PNP Transistor 2N6666 2N6666 2N6666 2N6666 PPC Inc. PNP Transistor 2N6667 PPC Inc. PNP Transistor 2N6668 2N6668 2N6668 2N6668 PPC Inc. PNP Transistor 2N6671 2N6671 2N6671 2N6671 PPC Inc. NPN Transistor 2N6672 2N6672 2N6672 2N6672 PPC Inc. NPN Transistor 2N6673 2N6673 2N6673 2N6673 PPC Inc. NPN Transistor
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Microsemi 03/12/1999 11.03 Kb HTM 2n66.htm
* * Model Generated by MODPEX * *Copyright(c) Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE * * Contains Proprietary Information * * Which is The Property of * * SYMMETRY OR ITS LICENSORS * * Modeling services provided by * * Interface Technologies www.i-t.com * * .SUBCKT 2n6667 1 2 3 * Model generated on Feb 22, 2004 * Model format: SPICE3 * Darlington macro model
www.datasheetarchive.com/files/on_semiconductor/simulation-models/2n6667.sp3
On Semiconductor 30/03/2009 1.66 Kb SP3 2n6667.sp3
* * Model Generated by MODPEX * *Copyright(c) Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE * * Contains Proprietary Information * * Which is The Property of * * SYMMETRY OR ITS LICENSORS * * Modeling services provided by * * Interface Technologies www.i-t.com * * .SUBCKT 2n6667 1 2 3 * Model generated on Feb 22, 2004 * Model format: PSpice * Darlington macro model
www.datasheetarchive.com/files/on_semiconductor/simulation-models/2n6667.lib
On Semiconductor 30/03/2009 1.65 Kb LIB 2n6667.lib
2N6666 2N6666 2N6666 2N6666 PPC PNP TO-220 STD 65 8 40 40 5 2N6667 PPC PNP TO-220 STD 65 10 60 60 5 2N6668 2N6668 2N6668 2N6668 PPC PNP TO-220 STD
www.datasheetarchive.com/files/microsemi/products/pnp/46_2.htm
Microsemi 04/01/1999 11.43 Kb HTM 46_2.htm
65 8 40 40 5 2N6667 PPC PNP TO-220 STD 65 10 60 60 5 2N6668 2N6668 2N6668 2N6668 PPC PNP TO-220 STD 65 10 80 80 5
www.datasheetarchive.com/files/microsemi/products/pnp/27_65.htm
Microsemi 04/01/1999 7.34 Kb HTM 27_65.htm
Search Criteria: PartType = PNP Transistor, HFE @ Ic Test = 5 mAmps Part No Type Package Power (Watts) IC (Amps) BVCBO (Volts) Vceo (Volts) Vebo (Volts) 2N5739 2N5739 2N5739 2N5739 PPC PNP TO-66 STD 35 10 60 60 5 2N5740 2N5740 2N5740 2N5740 PPC PNP TO-66 STD 35 10 100 100 5 2N6667 PPC PNP TO-220 STD 65 10 60 60 5 2N6668 2N6668 2N6668 2N6668 PPC PNP TO-220 STD 65 10 80 80 5 2N6489 2N6489 2N6489 2N6489 PPC PNP TO-220 STD 75 15 50 40 5
www.datasheetarchive.com/files/microsemi/products/pnp/205_5.htm
Microsemi 04/01/1999 17.32 Kb HTM 205_5.htm

Shortform Datasheet Search Results

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2N6667 N/A Silicon PNP + Darlington

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2N6667 N/A Darlington, Power

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BDX54B Buy 2N6667 Buy On Semiconductor Nearest Preferred Power Bipolar - Low Voltage ( < 160 V) General Purpose

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