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2N6667G ON Semiconductor 10 A, 60 V PNP Darlington Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE visit Digikey

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2N6667 Datasheet

Part Manufacturer Description PDF Type
2N6667 Central Semiconductor Leaded Power Transistor Darlington Original
2N6667 On Semiconductor Darlington Silicon Power Transistors Original
2N6667 On Semiconductor Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60-80 V, 65 W Original
2N6667 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N6667 Boca Semiconductor PLASTIC MEDIUM-POWER SILICON TRANSISTORS Scan
2N6667 Central Semiconductor POWER DARLINGTON TRANSISTORS (EPOXY / METAL) Scan
2N6667 Central Semiconductor Power Transistors Scan
2N6667 General Electric 10 A P-N-P darlington power transistor. -60 V. 65 W. Gain of 1000 at 5 A. Scan
2N6667 Mospec POWER TRANSISTORS(65W) Scan
2N6667 Mospec Plastic Medium-Power Silicon Transistor Scan
2N6667 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2N6667 N/A Transistor Shortform Datasheet & Cross References Scan
2N6667 N/A Shortform Transistor PDF Datasheet Scan
2N6667 N/A Transistor Replacements Scan
2N6667 N/A Transistor Replacements Scan
2N6667 N/A Transistor Replacements Scan
2N6667 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N6667 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N6667 N/A Semiconductor Master Cross Reference Guide Scan
2N6667 N/A Shortform Transistor Datasheet Guide Scan
Showing first 20 results.

2N6667

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2.97 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 2N6666, 2N6667.2N6668 PNP ELECTRICAL CHARACTERISTICS ( Tc , )-2N6666 = 60 V (Min) - 2N6667 = 80 V (Min) - 2N6668 base o * Collector-Emitter Saturation Voltage VCE(sat) = 2 0 V (Max ) @ lc = 3 0 A - 2N6666 = 2.0 V (Max.) @ lc = 5.0 A - 2N6667, 2N6668 * DC Current , emitter PNP 2N6666 2N6667 2N6668 Characteristic Symbol 2N6666 2N6667 2N6668 Unit Collector-Emitter , - Emitter Sustaining Voltage (1) (lc = 200 mA, lB = 0 ) 2N6666 2N6667 2N6668 Collector Cutoff -
OCR Scan
2N6386 2N6387 2N6388 LDLB power switching 10 amp 60V
Abstract: 2N6667 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. class="hl">2N6667 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Class » Darlington Transistors Type » PNP Buy 2N6667 at our online store! 2N6667 , : 2N6667 Information Did you Know. AMS has access to a network of more than 230,645,000 electronic components? Combine that Products Search for Parts Request a Quote Test Houses 2N6667 Specifications American Microsemiconductor
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STV3208 LM3909N LM3909 1N4510 2N1711
Abstract: 0.55 M 2.48 2.98 O 3.70 3.90 2N6666, 2N6667.2N6668 PNP ELECTRICAL CHARACTERISTICS ( Tc = 25Â , 40V(Min)-2N6666 = 60 V (Min) - 2N6667 = 80 V (Min) - 2N6668 base o * Collector-Emitter Saturation Voltage VCE(sat) = 2 0 V (Max ) @ lc = 3 0 A - 2N6666 = 2.0 V (Max.) @ lc = 5.0 A - 2N6667, 2N6668 * DC , emitter PNP 2N6666 2N6667 2N6668 Characteristic Symbol 2N6666 2N6667 2N6668 Unit Collector-Emitter , Sustaining Voltage (1) (lc = 200 mA, lB = 0 ) 2N6666 2N6667 2N6668 Collector Cutoff Current (VCE-40V, lB = -
OCR Scan
Abstract: Shipping 2N6667 TO-220AB 50 Units/Rail 2N6667G TO-220AB (Pb-Free) 50 Units/Rail , 2N6667, 2N6668 Darlington Silicon Power Transistors Designed for general-purpose amplifier and , (Min) - 2N6667 = 80 Vdc (Min) - 2N6668 Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc , June, 2005 - Rev. 5 1 Publication Order Number: 2N6667/D 2 http://onsemi.com Î Î Î , %. Collector-Emitter Sustaining Voltage (Note 2) (IC = 200 mAdc, IB = 0) 2N6667 2N6668 VCEO(sus) 60 80 - ON Semiconductor
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2N6668G 1N5825 MSD6100 2N666 2N6667/D
Abstract: Transistors_â'"- 2N6666, 2N6667, 2N6668 File Number 1069 10-Ampere P-N-P Darlington Power Transistors 40-60-80 Volts, 65 Watts Gain of 1000 at3A(2N6666) Gain of 1000 at 5 A (2N6667, 2N6668) Features: â , -J9989 The 2N6666, 2N6667 and 2N6668* are monolithic silicon p-n-p Darlington transistors designed for low , No. 610. MAXIMUM RATINGS, Absolute-Maximum Values: 2N6666 2N6667 2N6668 â'¢ VCB0 , Transistors 2N6666, 2N6667, 2N6668 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tq) =25°CUniess -
OCR Scan
TA8204 TA8487 2N6386-2N6388 ta8203 transistor RCA 274 N6666 2n6387 rca 0D172 92CS-J9989 TA8203
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6667/D 2N6609 (See2N3773 , Voltage - @ 200 mAdc V cEO (sus) = 60 Vdc (Min) - 2N6667 = 80 Vdc (Min) - 2N6668 Low Collector-Emitter , Temperature Range Symbol VCEO VCB V eb 'c 2N6667 60 60 5 10 15 250 65 0.52 > 0.016 2N6668 80 80 , °C /W °c /w REV 1 © Motorola, Inc. 1995 (M) M O TO RO LA 2N6667 2N6663 *ELECTRICAL , °C) Vdc, Tc = 125°C) 2N6667 2N6668 2N6667 2N6668 'CEX - - - - - 300 300 3 3 5 |iA dc m Adc 2N6667 -
OCR Scan
2N3773
Abstract: amplifier and low speed switching applications. 2N6667 2N6668 PNP SILICON DARLINGTON POWER TRANSISTORS , Adc Collector-Emitter Sustaining Voltage - @ 200 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6667 = 80 Vdc , (1) Rating Symbol VCEO VCB VEB IC IB 2N6667 60 60 2N6668 80 80 Unit Vdc Vdc Vdc Adc , Number: 2N6667/D ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ , Case 1.92 62.5 _C/W _C/W Thermal Resistance, Junction to Ambient 2N6667 2N6668 *ELECTRICAL ON Semiconductor
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Abstract: 2N6667 2N6667G 2N6668 2N6668G Package TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free) Shipping 50 , 2N6667, 2N6668 Darlington Silicon Power Transistors Designed for general-purpose amplifier and low , Collector-Emitter Sustaining Voltage - @ 200 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6667 = 80 Vdc (Min) - 2N6668 Low , 1 Publication Order Number: 2N6667/D ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , Emitter-Base Voltage Rating Symbol VCEO VCB VEB IC IB 2N6667 60 60 2N6668 80 80 Unit Vdc Vdc Vdc Adc 5.0 10 15 ON Semiconductor
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Abstract: ) - 2N6667 - 8 0 Vdc (Min) - 2N6668 · Low Collector-Emitter Saturation Voltage - VcE(sat) = 2 Vdc , B Compact Package · Complementary to 2N 6387,2N6388 2N6667 2N6668 PN P SILIC O N DARLINGTON PO W , Temperature Range Symbol VCEO VCB Veb lc 2N6667 60 60 5 10 15 250 65 0.52 2 0.016 2N6006 80 80 , 2N6667 2N6668 'ELE CT RIC A L C H A R A C T E R IST IC S (T c - 25°C unless otherwise noted , ) 1.5 Vdc, TC - 125°C) 1 .5 Vdc, TC - 125"C) 2N6667 2N6668 2N6667 2N6668 2N6667 2N6668 2N6667 2N6668 VC -
OCR Scan
2N600
Abstract: 2N6667 2N6668 Unit VCEO 60 80 Vdc Collector­Base Voltage VCB 60 80 Vdc , Vdc (Min) - 2N6667 VCEO(sus) = 80 Vdc (Min) - 2N6668 · Low Collector­Emitter Saturation Voltage - , switching applications. 2N6667 2N6668 Darlington Silicon Power Transistors (See 2N3773) 2N6609 SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6667/D MOTOROLA 3­2 Figure 3. Power Derating , Cycle 2%. Collector­Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) 2N6667 2N6668 VCEO Motorola
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2N3773 MOTOROLA 2N3773 transistor 2N3773 applications
Abstract: Shipping 2N6667 TO-220AB 50 Units/Rail 2N6667G TO-220AB (Pb-Free) 50 Units/Rail , 2N6667, 2N6668 Darlington Silicon Power Transistors Designed for general-purpose amplifier and , 2N6667 = 80 Vdc (Min) - 2N6668 ·Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max)@ IC = , November, 2007 - Rev. 6 1 Publication Order Number: 2N6667/D 2 http://onsemi.com Î Î Î , %. Collector-Emitter Sustaining Voltage (Note 2) (IC = 200 mAdc, IB = 0) 2N6667 2N6668 VCEO(sus) 60 80 - ON Semiconductor
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Abstract: MOTOROLA Order this document by 2N6667/D SEMICONDUCTOR TECHNICAL DATA 2N6609 (See 2N3773 , * C ollector-Em itter Sustaining Voltage â'" @ 200 mAdc V c E O is u s I = 60 Vdc (Min) â'" 2N6667 = , MAXIMUM RATINGS (1) Rating Symbol 2N6667 2N6668 Unit v CEO 60 80 Vdc C o , (1) Indicates JEDEC Registered Data. REV 1 © M otorola, Inc. 1995 ($ J M OTOROLA 2N6667 , Sustaining Voltage (1) (I q = 200 mAdc, Ià = 0) 2N6667 2N6668 v CEO(sus) Collector Cutoff Current -
OCR Scan
Abstract: File Num ber 1069 2N6666, 2N6667, 2N6668 10-Ampere P-N-P Darlington Power Transistors 40-60-80 Volts, 65 Watts Gain of 1000 at 3 A (2N6666) Gain of 1000 at 5 A (2N6667, 2N6668) Features , -3 M 6 S The 2N6666, 2N6667 and 2N6668* are m onolithic silicon p-n-p Darlington transistors , , Absolute-Maximum Values: 2N6666 -4 0 -4 0 2N6667 -6 0 -6 0 -6 0 -6 0 -5 -1 0 -1 5 -0 .2 5 65 - - 65 to +150 , accordance with JEDEC registration data format (JS-6 RDF-4). 2-182 2N6666, 2N6667, 2N6668 ELECTRICAL -
OCR Scan
RCA 2n6388 92CS- 2087IR 92CS-2087 24907RI 92CS-20674 20B6BRI
Abstract: ON Semiconductor ) 2N6667 2N6668 Darlington Silicon Power Transistors . . . designed for , Adc Collector­Emitter Sustaining Voltage - @ 200 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6667 = 80 Vdc , Collector­Emitter Voltage 2N6667 2N6668 Unit VCEO 60 80 Vdc Collector­Base Voltage VCB , , LLC, 2002 April, 2002 ­ Rev. 4 1 Publication Order Number: 2N6667/D 2N6667 2N6668 ÎÎÎ , ) (IC = 200 mAdc, IB = 0) 2N6667 2N6668 VCEO(sus) 60 80 - - Vdc Collector Cutoff ON Semiconductor
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220AB
Abstract: File Number 1069 2N6666,2N6667,2N6668 SbE ] > M3G2271 GCJMObGM 031 H A S HARRIS SENICOND , (2N6666) Gain of 1000 at 5 A (2N6667, 2N6668) Features: Operates from 1C without predriver (F L A N G , Audio amplifiers Hammer drivers Series and shunt regulators JEDEC TO-22QAB The 2N6666, 2N6667 and , ) . V c e v (s u s ) 2N6666 -4 0 -4 0 -4 0 -4 0 - 5 -8 -1 5 -0 .25 66 2N6667 -6 0 -6 0 -« 0 -6 , registration data format US-6 RDF-4). 2-182 2N6666,2N6667,2N6668 5bE D 43D2271 DD4Qb05 T7fl « -
OCR Scan
92CS-2086BR2 92CS-20696NI 43G2271 T-33-31 92CS-30I93 2CS-2W74
Abstract: ORDERING INFORMATION Device Package Shipping 2N6667 TOâ'220AB 50 Units/Rail 2N6667G , 2N6667, 2N6668 Darlington Silicon Power Transistors Designed for generalâ'purpose amplifier and , mAdc VCEO(sus) = 60 Vdc (Min) â' 2N6667 = 80 Vdc (Min) â' 2N6668 Low Collectorâ'Emitter , Order Number: 2N6667/D 2 http://onsemi.com ÃÃÃ Ã Ã Ã Ã , %. Collectorâ'Emitter Sustaining Voltage (Note 2) (IC = 200 mAdc, IB = 0) 2N6667 2N6668 VCEO(sus) 60 80 â ON Semiconductor
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Abstract: ON Semiconductort 2N6667 2N6668 Darlington Silicon Power Transistors . . . designed for , Adc Collector­Emitter Sustaining Voltage - @ 200 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6667 = 80 Vdc , Collector­Emitter Voltage 2N6667 2N6668 Unit VCEO 60 80 Vdc Collector­Base Voltage VCB , , LLC, 2001 March, 2001 ­ Rev. 3 1 Publication Order Number: 2N6667/D 2N6667 2N6668 ÎÎÎ , ) (IC = 200 mAdc, IB = 0) 2N6667 2N6668 VCEO(sus) 60 80 - - Vdc Collector Cutoff ON Semiconductor
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20000 watt schematics power amp
Abstract: - 2N6666, 2N6667, 2N6668 File Number 1069 10-Ampere P-N-P Darlington Power Transistors , 5 65 . deratelinearly - - 65 to +150 2N6667 -6 0 -6 0 -6 0 -6 0 -5 -1 0 -1 , Transistors D T '3 ? '3 1 2N6666, 2N6667, 2N6668 ELECTRICAL CHARACTERISTICS, AtCase Temperature (T q , . 2N6667 M IN . M AX. -1 - 0 ,3 - 2N6668 M IN. M A X. -1 UNITS - -1 - 0 .3 -3 _ -1 0 - - , _ - ¿N6666, 2N6667, 2N6668 C O L L C C T O H -T O -E M IT T C R V 0 LT A 9E (V C C )- V t t C I -
OCR Scan
8A103 0017E72 20944BI
Abstract: 30 150 3.0 3.5 7.0 4.0 2n6386 2n6666 8.0 65 40 40 1,000 20,000 3.0 2.0 3.0 20 2n6387 2n6667 10 65 -
OCR Scan
2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N6121 2N6103 2N6101 2N6099 2N5496
Abstract: 2.0 3.0 20 2N6387 2N6667 10 65 60 60 1,000 20,000 5.0 2.0 5.0 Central Semiconductor
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2N6040 2N6041 2N6042 2N6124 2N6125 2N6126 2N6134 2N6133 2N6132 2N6131 2N6129 2N6043 2N6044 2N6045
Abstract: (sus) = 60 Vdc (Min) - 2N6667 VCEO(sus) = 80 Vdc (Min) - 2N6668 · Low Collector­Emitter Saturation , Resistors · TO­220AB Compact Package · Complementary to 2N6387, 2N6388 COLLECTOR 2N6667 2N6668 PNP , Figure 1. Darlington Schematic MAXIMUM RATINGS (1) Rating Symbol VCEO VCB VEB IC IB 2N6667 60 60 2N6668 , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v v 2N6667 2N6668 *ELECTRICAL , Collector­Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) 2N6667 2N6668 VCEO(sus) ICEO 60 80 - - - - - Motorola
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2SD669 equivalent BD801 BDY29 equivalent BU108 2N6021 2SD436 MJ15012 MJE15030 2N6339 2N6341 2N6497 MJ15011
Abstract: 0.1 VIN 12V TO 35V 51 2W 2N6667 (HEAD SINK) 3.01k* VIN VSW E1 LT1072CN8 + 100uF , L1 285uH IN 1000uF MBR360 10k 1k + HEAT SINK 2N6667 Q1 DARLINGTON ADJ 30k , STANCOR P-8685 IN HEAT SINK 2N6667 Q2 DARLINGTON 1000uF MBR360 10k 1k + 130VAC , 2.2k VZ Q1 2N6667 1MHY 28V INPUT 10k IN + 1N4003 LT350A OUTPUT OUT , AN30-31 Application Note 30 27k VIN 10V DC TO 20V DC 3V DC UNDER ALL CONDITIONS 2N6667 Linear Technology
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CM55-T13 eprom 92112 SPRAGUE 11Z-2003 AN3030 MALLORY CAPACITOR CATALOG hp5082-2810 STANCOR 11Z-2003 LTC1044 PE-52645 AN30-43 AN30-44 LT1004-2
Showing first 20 results.