2N6386 2N6387 2N6388 2N6666/6667/6668 2N6387/6388 - Datasheet Archive

 

Product Specification 2N6386 2N6387 2N6388 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package

 

SavantIC Semiconductor Product Specification 2N6386 2N6386 2N6387 2N6387 2N6388 2N6388 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2N6666/6667/6668 2N6666/6667/6668 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS 2N6386 2N6386 VCBO Collector-base voltage 2N6387 2N6387 VALUE 40 Open emitter 60 2N6388 2N6388 Collector-emitter voltage 40 2N6387 2N6387 Open base 2N6388 2N6388 VEBO Emitter-base voltage IC V 80 2N6386 2N6386 VCEO UNIT 60 V 80 Open collector 5 Collector current-DC 2N6386 2N6386 8 2N6387/6388 2N6387/6388 V 10 A ICM Collector current-Pulse 15 IB Base current-DC 0.25 PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 A A 65 W SavantIC Semiconductor Product Specification 2N6386 2N6386 2N6387 2N6387 2N6388 2N6388 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6386 2N6386 VCEO(SUS) Collector-emitter sustaining voltage VCEsat-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage IC=0.2A, IB=0 2N6387 2N6387 Collector cut-off current 2N6386 2N6386 2N6387/6388 2N6387/6388 2N6386 2N6386 IC=8A ,IB=80mA 2N6387/6388 2N6387/6388 IC=10A ,IB=100mA 2N6386 2N6386 IC=3A ; VCE=3V 2N6387/6388 2N6387/6388 IC=5A ; VCE=3V 2N6386 2N6386 IC=8A ; VCE=3V 2N6387/6388 2N6387/6388 IC=10A ; VCE=3V 2.0 DC current gain mA 5.0 mA IC=3A ; VCE=3V 2N6387/6388 2N6387/6388 IC=5A ; VCE=3V 2N6386 2N6386 IC=8A ; VCE=3V 2N6387/6388 2N6387/6388 Cob 1.0 VEB=5V; IC=0 2N6386 2N6386 hFE-2 mA VCE=80V, IB=0 Emitter cut-off current hFE-1 0.3 3.0 0.3 3.0 0.3 3.0 VCE=60V, IB=0 V VCE=40V, IB=0 2N6387 2N6387 V 4.5 2N6387 2N6387 V 2.8 VCB=40V, VBE=-1.5V TC=125 VCB=60V, VBE=-1.5V TC=125 VCB=80V, VBE=-1.5V TC=125 V 3.0 2N6388 2N6388 IEBO V 60 IC=5A ,IB=10mA 2N6386 2N6386 Collector cut-off current UNIT IC=3A ,IB=6mA 2N6388 2N6388 ICEO MAX 80 2N6386 2N6386 ICBO TYP. 40 2N6388 2N6388 VCEsat-1 MIN IC=10A ; VCE=3V 1000 DC current gain 20000 100 Output capacitance IE=0 ; VCB=10V,f=0.1MHz 200 pF THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.92 2 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2N6386 2N6386 2N6387 2N6387 2N6388 2N6388