Datasheet Search Results			1 - 22 of about 22 for 2N6515
	2N6515	Central Semiconductor	Small Signal Transistors	20.02 Kb,  1 Pages.
	2N6515	Continental Device India Limited	Semiconductor Device Data Book 1996	101.15 Kb,  1 Pages.
	2N6515	Continental Device India Limited	TO-92 NPN Plastic Package Transistors	227.11 Kb,  2 Pages.
	2N6515	Fairchild Semiconductor	NPN EPITAXIAL SILICON TRANSISTOR	54.29 Kb,  2 Pages.
	2N6515	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor	33.08 Kb,  4 Pages.
	2N6515	Micro Commercial Components	High Voltage Transistor	446.63 Kb,  6 Pages.
	2N6515	Micro Commercial Components	High Voltage Transistor 625mW	422.7 Kb,  6 Pages.
	2N6515	Motorola	European Master Selection Guide 1986	51.87 Kb,  1 Pages.
	2N6515	Motorola / Freescale Semiconductor	NPN High Voltage Transistors	259.38 Kb,  6 Pages.
	2N6515	On Semiconductor	High Voltage Transistors	228.93 Kb,  8 Pages.
	2N6515	On Semiconductor	NPN High Voltage Transistors	100.34 Kb,  8 Pages.
	2N6515	Samsung Electronics	NPN EPITAXIAL SILICON TRANSISTOR	64.63 Kb,  2 Pages.
	2N6515	Siemens Semiconductors	Cross Reference Guide 1998	26.71 Kb,  7 Pages.
	2N6515	Usha Ltd.	High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.	46.48 Kb,  1 Pages.
	2N6515	N/A	Shortform Data and Cross References (Misc Datasheets)	37.32 Kb,  1 Pages.
	2N6515	N/A	Shortform Transistor Datasheet Guide	87.91 Kb,  1 Pages.
	2N6515	N/A	Shortform IC and Component Datasheets (Plus Cross Reference Data)	89.97 Kb,  1 Pages.
	2N6515	N/A	Semiconductor Master Cross Reference Guide	113.81 Kb,  1 Pages.
	2N6515-D	On Semiconductor	High Voltage Transistors	95.24 Kb,  8 Pages.
	2N6515RLRM	On Semiconductor	High Voltage Transistors	228.93 Kb,  8 Pages.
	2N6515RLRMG	On Semiconductor	High Voltage Transistor NPN; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Tape and Ammunition Box; Qty per Container: 2000	113.3 Kb,  7 Pages.
	2N6515RLRMG	On Semiconductor	High Voltage Transistor NPN	100.04 Kb,  8 Pages.

Fulltext Datasheet Results		1 - 50 of about 63 for 2N6515
	First line: transistor 2N6520 2N6515, 2N6517 2N6519, 2N6520 High Voltage Transistor 625mW Abstract: .. Collector-Emitter Voltage 2N6515 2N6519 2N6519 2N6517 2N6517 , 2N6520 2N6520 VCEO. 250 300 350. V. Collector-Base Voltage 2N6515 2N6519 2N6519 2N6517 2N6517 , 2N6520 2N6520 VCBO. 250 300 350. V. Emitter-Base Voltage 2N6515-6517 2N6519-6520 2N6519-6520 ..  Tags: transistor 2N6520  2N6520   2N6515 2N6517 2N6519 2N6520	390.26 Kb	6 Pages	Original
	First line: omponents 20736 Marilla Street Chatsworth Abstract: .. Collector-Emitter Voltage 2N6515 2N6519 2N6519 2N6517 2N6517 , 2N6520 2N6520 VCEO. 250 300 350. V. Collector-Base Voltage 2N6515 2N6519 2N6519 2N6517 2N6517 , 2N6520 2N6520 VCBO. 250 300 350. V. Emitter-Base Voltage 2N6515-6517 2N6519-6520 2N6519-6520 ..  Tags: transistor 2N6520  2N6517  2N6515   datasheet abstract..	446.63 Kb	6 Pages	Original
	First line: omponents 21201 Itasca Street Chatsworth Abstract: .. Collector-Emitter Voltage 2N6515 2N6519 2N6519 2N6517 2N6517 , 2N6520 2N6520 VCEO. 250 300 350. V. Collector-Base Voltage 2N6515 2N6519 2N6519 2N6517 2N6517 , 2N6520 2N6520 VCBO. 250 300 350. V. Emitter-Base Voltage 2N6515-6517 2N6519-6520 2N6519-6520 ..  Tags: transistor 2N6520   datasheet abstract..	422.69 Kb	6 Pages	Original
	First line: Rating Symbol 2N6515 2N6516 2N6519 2N6517 2N6520 Unit Collector-Emitter Voltage vceo Collector-Base Voltage CCBO Emitter-Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 vebo Base Current mAdc Collector Current Continuous mAdc Total Device Dissipation Derate above mWfC Total Device Dissipation Der Abstract: .. MAXIMUM RATINGS Rating Symbol 2N6515 2N6516 2N6516 2N6519 2N6519 2N6517 2N6517 2N6520 2N6520 Unit Collector-Emitter Voltage vceo 250 300 350 Vdc Collector-Base Voltage CCBO 250 300 350 Vdc Emitter-Base Voltage 2N6515 ..  Tags:   datasheet abstract..	278.01 Kb	6 Pages	OCR Scan
	First line: 2N6515, 2N6517, 2N6520 High Voltage Transistors Voltage Current Negative Transistors Pb-Free Package Available* Abstract: .. 2N6515, 2N6517 2N6517 , 2N6520 2N6520 . High Voltage Transistors NPN and PNP. Features ∞ Voltage and Current are Negative for PNP Transistors ∞ Pb-Free Package is Available* MAXIMUM RATINGS. Rating Symbol 2N6515 ..  Tags: transistor 2N6520  2n6517 data sheet  2N6517   2N6515 2N6517 2N6520	100.04 Kb	8 Pages	Original
	First line: High Voltage Transistors Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 Base Current Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operat Abstract: .. High Voltage Transistors. MAXIMUM RATINGS. Rating Symbol 2N6515 2N6519 2N6519 . 2N6517 2N6517 2N6520 2N6520 Unit. Collector‐Emitter Voltage VCEO 250 300 350 Vdc. Collector‐Base Voltage VCBO 250 300 350 Vdc. Emitter‐Base ..  Tags: transistor 2N6520   2N6515 2N6516 2N6517 2N6519 2N6520	100.34 Kb	8 Pages	Original
	First line: High Voltage Transistors Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 Base Current Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operat Abstract: .. High Voltage Transistors MAXIMUM RATINGS. Rating Symbol 2N6515. 2N6517 2N6517 2N6520 2N6520 Unit. Collector‐Emitter Voltage VCEO 250 350 Vdc. Collector‐Base Voltage VCBO 250 350 Vdc. Emitter‐Base Voltage 2N6515 ..  Tags: transistor 2N6520   2N6515 2N6516 2N6517 2N6519 2N6520	95.25 Kb	8 Pages	Original
	First line: SILICON PLANAR EPITAXIAL TRANSISTORS 2N6515, 2N6519 2N6516, 2N6520 2N6517 TO-92 Plastic Package Abstract: .. NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N6515, 2N6519 2N6519 . 2N6516 2N6516 , 2N6520 2N6520 . 2N6517 2N6517 . TO-92 TO-92 . Plastic Package. HIGH VOLTAGE TRANSISTORS. ABSOLUTE MAXIMUM RATINGS Ta=25oC 25oC unless specified otherwise ..  Tags:   2N6515 2N6519 2N6516 2N6520 2N6517	156.69 Kb	5 Pages	Original
	First line: SILICON PLANAR EPITAXIAL TRANSISTORS 2N6515, 2N6519 2N6516, 2N6520 2N6517 TO-92 Plastic Package Abstract: .. NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N6515, 2N6519 2N6519 . 2N6516 2N6516 , 2N6520 2N6520 . 2N6517 2N6517 . TO-92 TO-92 . Plastic Package. HIGH VOLTAGE TRANSISTORS. ABSOLUTE MAXIMUM RATINGS Ta=25oC 25oC unless specified otherwise ..  Tags: transistor 2N6520  2n6517 data sheet  2N6516   2N6515 2N6519 2N6516 2N6520 2N6517	164.9 Kb	5 Pages	Original
	First line: 2N6520 MOTOROLA High Voltage Transistors Order this document 2N6515/D Abstract: .. Rating Symbol 2N6515. 2N6516 2N6516 2N6519 2N6519 2N6517 2N6517 2N6520 2N6520 Unit. Collector ‐ Emitter Voltage VCEO 250 300 350 Vdc. Collector ‐ Base Voltage VCBO 250 300 350 Vdc. Emitter ‐ Base Voltage 2N6515, 2N6516 2N6516 , 2N6517 2N6517 ..  Tags: 2N6520 MOTOROLA 2N6517 MOTOROLA  2N6516   2N6515	327.2 Kb	8 Pages	Original
	First line: 2N6520 MOTOROLA Order this document 2N6515/D High Voltage Transistors Abstract: .. Rating Symbol 2N6515 2N6519 2N6519 . 2N6517 2N6517 2N6520 2N6520 Unit. Collector ‐ Emitter Voltage VCEO 250 300 350 Vdc. Collector ‐ Base Voltage VCBO 250 300 350 Vdc. Emitter ‐ Base Voltage 2N6515, 2N6516 2N6516 , 2N6517 2N6517 2N6519 2N6519 ..  Tags: transistor 2N6520  MSD7000  2N6520 MOTOROLA  2N6517 MOTOROLA   2N6515	228.92 Kb	8 Pages	Original
	First line: Semiconductor Corp. Adams Avenue Hauppauge, York 2N6515 2N6516 2N6517 2N6518 2N6519 2N6520 COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS JEDEC TO-92 CASE CENTRAL SEMICONDUCTOR 2N6515 (NPN), 2N65T (PNP) Series types molded epoxy complementary silicon transistors designed high voltage driver amplifie Abstract: .. centralâ„ � Semiconductor Corp. 145 Adams Avenue Hauppauge, New York 11 788 âTM �I 2N6515 2N6516 2N6516 2N6517 2N6517 NPN 2N6518 2N6518 2N6519 2N6519 2N6520 2N6520 PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS JEDEC TO-92 TO-92 ..  Tags:   datasheet abstract..	106.02 Kb	1 Pages	OCR Scan
	First line: 2N6515 Collector-Emitter Voltage: VCEO= 250V Collector Dissipation: (max)=625mW Abstract: .. 2N6515 NPN EPITAXIAL SILICON TRANSISTOR. HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO= 250V 250V • Collector Dissipation: PC max =625mW 625mW . ABSOLUTE MAXIMUM RATINGS TA=25 ELECTRICAL ..  Tags:   2N6515	41.9 Kb	2 Pages	Original
	First line: 2N6515, 2N6517; 2N6520 High Voltage Transistors COLLECTOR BASE Symbol VCEO VCBO 2N6515 2N6517, 2N6520 Emitter Base Voltage 2N6515, 2N6517 2N6520 Base Current Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C O Abstract: .. 2N6515/D. NPN 2N6515, 2N6517 2N6517 ; PNP 2N6520 2N6520 . High Voltage Transistors NPN and PNP. Features. • Voltage and Current are Negative for PNP Transistors • These are Pb Free Devices* MAXIMUM RATINGS. Rating ..  Tags:   2N6515 2N6517 2N6520	113.33 Kb	7 Pages	Original
	First line: 2N6515 Collector-Emitter Voltage: VCEo= 250V Collector Dissipation: Pc(max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage Vobo Collector-Emitter Voltage Vceo Abstract: .. 2N6515 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR †� Collector-Emitter Voltage: VCEo= 250V 250V †� Collector Dissipation: Pc max =625mW 625mW ABSOLUTE MAXIMUM RATINGS TA=25 �C ..  Tags:   datasheet abstract..	72.82 Kb	2 Pages	OCR Scan
	First line: 2N6515 2N6515 Collector-Emitter Voltage: VCEO= 250V Collector Dissipation: (max)=625mW Complement 2N6518 Abstract: .. �2001 Fairchild Semiconductor Corporation Rev. A1, June 2001. 2N6515. NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 �C unless otherwise noted. Electrical Characteristics ..  Tags:   2N6515 2N6518	34.79 Kb	4 Pages	Original
	First line: 2N6515 2N6515 Collector-Emitter Voltage: VCEO= 250V Collector Dissipation: (max)=625mW Complement 2N6518 Abstract: .. �2000 Fairchild Semiconductor International Rev. A, February 2000. 2N6515. NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 �C unless otherwise noted. Electrical Characteristics ..  Tags: 2N6516   2N6515 2N6518	33.08 Kb	4 Pages	Original
	First line: 2N6515 Collector-Emitter Vbltage: VCCo=250V Collector Dissipation: Pc(max)=625mW TO-92 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VcBO Abstract: .. 2N6515 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR †� Collector-Emitter Vbltage: VCCo=250V 250V †� Collector Dissipation: Pc max =625mW 625mW TO-92 TO-92 ABSOLUTE MAXIMUM RATINGS Ta=25 ..  Tags:   datasheet abstract..	83.15 Kb	2 Pages	OCR Scan
	First line: 2N6517 Collector-Emitter Voltage: VCEO=350V Collector Dissipation: (max)=625mW Abstract: .. • Refer to 2N6515 for graphs. ELECTRICAL CHARACTERISTICS TA=25 Pulse Test: Pulse Width 300 , Duty Cycle 2% Characteristic Symbol Rating Unit. Collector-Base Voltage Collector-Emitter Voltage ..  Tags:   2N6517	19.85 Kb	1 Pages	Original
	First line: 2N6517 Collector-Emitter Voltage: Vceo=350V Collector Dissipation: Pc(max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage Vobo Collector-Emitter Voltage Vceo Abstract: .. Temperature Tj 150  �C Storage Temperature Tstg -55 ~150  �C †� Refer to 2N6515 for graphs TO-92 TO-92 1 .Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS TA=25 �C Characteristic Symbol ..  Tags:   datasheet abstract..	49.76 Kb	1 Pages	OCR Scan
	First line: 2N6516 Collector-Emitter Voltage: Vceo=300V Collector Dissipation: Pc(max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VcBO Collector-Emitter Voltage VcEO Abstract: .. Temperature Tj 150  �C Storage Temperature Tstg -55 ~ 150  �C †� Refer to 2N6515 for graphs TO-92 TO-92 1 .Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS TA=25 �C Characteristic Symbol ..  Tags:   datasheet abstract..	49.84 Kb	1 Pages	OCR Scan
	First line: 2N6516 HIGH VOLTAGE TRANSISOTR Collector-Emitter Voltage: Vceo-300V Collector Dissipation: (max)=625mW TO-92 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VcBO Abstract: .. Junction Temperature Tj 150 Â �C Storage Temperature Tstg -55-150 "C Refer to 2N6515 for graphs 1. Emitter 2. ELECTRICAL CHARACTERISTICS Ta=25Â �C Characteristic Symbol Test Conditions Min ..  Tags:   datasheet abstract..	55.11 Kb	1 Pages	OCR Scan
	First line: 2N6517 HIGH VOLTAGE TRANSISOTR Collector-Emitter Voltage: Veto =350V Collector Dissipation: (max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VcBO Collector-Emitter Voltage VCEO Abstract: .. Temperature Tj 150 Â �C Storage Temperature Tstg -55-150 Â �C Refer to 2N6515 for graphs ELECTRICAL CHARACTERISTICS Ta =25Â �C Characteristic Symbol Test Conditions Min iyp Max Unit 'Collector ..  Tags:   datasheet abstract..	55.48 Kb	1 Pages	OCR Scan
	First line: 2N6515 USHA (INDIA) Collector-Emitter Voltage: VCEO=250V Collector Dissipation: Pc(max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Abstract: .. Transistors 2N6515 USHA INDIA LTD HIGH VOLTAGE TRANSISTOR †� Collector-Emitter Voltage: VCEO=250V 250V †� Collector Dissipation: Pc max =625mW 625mW ABSOLUTE MAXIMUM RATINGS Ta=25 �C Characteristic ..  Tags:   datasheet abstract..	64.98 Kb	1 Pages	OCR Scan
	First line: 2N6517 USHA (INDIA) HIGH VOLTAGE TRANSISOTR Collector-Emitter Voltage: VCEo=350V Collector Dissipation: (max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Abstract: .. Temperature Tj 150 Â �C Storage Temperature Tstg -55-150 Â �C Refer to 2N6515 for graphs ELECTRICAL CHARACTERISTICS Ta =25Â �C Characteristic Symbol Test Conditions Min iyp Max Unit 'Collector ..  Tags:   datasheet abstract..	65.28 Kb	1 Pages	OCR Scan
	First line: SAMSUNG SEMICONDUCTOR 0007117 2N6517 EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISOTR Collector-Emitter Voltage: Vcso=350V Collector Dissipation: T-29-21 TO-92 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Abstract: .. Pc 625 mW Junction Temperature Tj 150 Â �C Storage Temperature Tstg -55-150 Â �C ' Refer to 2N6515 for graphs 1. Emitter 2. Bass 3. CoUeclor ELECTRICAL CHARACTERISTICS Ta =25Â �C Characteristic ..  Tags:   datasheet abstract..	55.98 Kb	1 Pages	OCR Scan
	First line: 2N6515 USHA (INDIA) Collector-Emitter Voltage: VCEO=250V Collector Dissipation: Pc(max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Abstract: .. Transistors 2N6515 USHA INDIA LTD HIGH VOLTAGE TRANSISTOR †� Collector-Emitter Voltage: VCEO=250V 250V †� Collector Dissipation: Pc max =625mW 625mW ABSOLUTE MAXIMUM RATINGS Ta=25 �C Characteristic ..  Tags:   datasheet abstract..	86.84 Kb	2 Pages	OCR Scan
	First line: AMSUNG SEMICONDUCTOR 71^4142 OOOTnt 2N6516 EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISOTR Collector-Emitter Voltage: Vceo=300V Collector Dlssipatioh: (max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voitage Vcao Collector-Emitter Voltage Vceo Abstract: .. 625 mW Junction Temperature Tj 150 Â �C Storage Temperature Tstg -55-150 Â �C 1 Refer to 2N6515 or graphs TO-92 TO-92 T-29-21 T-29-21 1, Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS Ta=25Â �C Characteristic ..  Tags:   datasheet abstract..	54.88 Kb	1 Pages	OCR Scan
	First line: MPS A92 transistor MPS2307* MPS2307 SMALL-SIGNAL TRANSISTORS PLASTIC (continued) High Voltage Amplifier Transistors (TO-92 EBC)* These high-voltage transistors designed driving neon bulbs Nixie@ indicator tubes, direct line operation, other applications requiring high-voltage capability relatively c Abstract: .. 300 0.5 40 30 0.5 20 2 50 10 2N6516 2N6516 300 0.5 45 30 0.3 10 1 40 10 BF392 BF392 250 0.5 40 10 0.2 20 2 50 10 2N6515 250 0.5 50 30 0.3 10 1 40 10 BF391 BF391 200 0.5 40 10 0.2 20 2 50 10 MPS-A43 MPS-A43 200 0.5 40 10 0.4 20 2 50 10 2N5551 2N5551 160 0.6 ..  Tags: MPS2307 MPS2307* MPS A92 transistor   datasheet abstract..	70.35 Kb	1 Pages	OCR Scan
	First line: T092 Plastic Package Transistors (NPN) Maxin atings Electrical Characteristics Unless Otherwise Specified) Type ^CBO ^CEO ^ebo 'cBO <MA) 'ces (CA) ^beisat) (rnA (PF) (MHz) (nsj Freq (dB) (MHz) CDIL Case Style 2N5172 0.25 TO-92-1 2N5209 0.625 0.0. 0.05 TO-92 2N5210 0.625 o.o: 0.05 TO-92 2N5219 0.6 Abstract: .. 12 0.625 0.5 0.05 30 10 20 14 100 200 140 10 100 500 5 5 5 1.2 1.5 50 2 500 5.4 7 1 2 10 TO-92 TO-92 2N6515 250 250 6 0.625 0.5 0.05 150 35 50 50 45 25 300 220 1 10 30 50 100 10 10 10 10 10 0.3 0.35 0.5 1 0.75 10 0.85 20 0.9 30 50 ..  Tags:   datasheet abstract..	104.87 Kb	1 Pages	OCR Scan
	First line: TO*92 Plastic Package Transistors (NPN) Maximum Ratings Electrical Characteristics Unless Otherwise Specified) Type ^CBO Vceo 'cBO 'ces ^ceisatl beisatl '(oil) Freq CDIL (MA) (ma) (mA) (mA) (pF) (MHz) (mA) (nsi (dB) (MHz) Case Style 2N5172 0.15 0.25 TO-92-1 2N5209 0.625 0.05 0.05 TO-92 Abstract: .. 12 0.625 0.5 0.05 30 10 100 10 5 1.2 50 5.4 7 1 2 10 TO-92 TO-92 20 200 100 5 1.5 2 500 14 140 500 5 2N6515 250 250 6 0.625 0.5 0.05 150 35 1 10 0.3 0.75 10 6 40 200 10 3.5 TO-92 TO-92 50 10 10 0.35 0.85 20 50 300 30 10 0.5 0.9 30 45 220 ..  Tags:   datasheet abstract..	119.64 Kb	1 Pages	OCR Scan
	First line: BAT16-046 2N2907 SOT-23 SMD BC547 2n2222 smd BC547 smd Leaded Devices 1N4001 1N4002 1N4003 1N4004 1N4001 (2x) 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 SMD-Packages SOD-323 SCD-80 SOT-23 SOT-143 SOT-323 SOT-343 SOT-363 SCT-595 SOT-89 BAW78A BAW78B BAW78C BAW78M BAW78D BAW79A BAW79B BAW79C BAW79D BA Abstract: .. 2N6428 2N6428 2N6429 2N6429 2N6515 BFN24 BFN24 BFN16 BFN16 BFN36 BFN36 2N6516 2N6516 BFN26 BFN26 BFN18 BFN18 BFN38 BFN38 2N6518 2N6518 BFN25 BFN25 BFN17 BFN17 BFN37 BFN37 2N6519 2N6519 BFN27 BFN27 BFN19 BFN19 BFN39 BFN39 2N6718 2N6718 BCX41 BCX41 2N6724 2N6724 BCV29 BCV29 BCP29 BCP29 2N6725 2N6725 BCV29 BCV29 BCP29 BCP29 BA282 BA282 BA592 BA592 ..  Tags: BC547 smd 2n2222 smd 2N2907 SOT-23 BAT16-046 transistors BFW16A  TMS1050  SOT-343  sot-23 4X BAV70  SOT-23 2N2222  smd bc549  SMD BC547  smd 2n2907a  smd 2n2222  SMBTA92  SMBTA63   1N4001 1N4002 1N4003 1N4004 1N4148	40.13 Kb	7 Pages	Original
	First line: 2N6517 2N6517 Collector-Emitter Voltage: VCEO=350V Collector Dissipation: (max)=625mW Complement 2N6520 Suffix "-C" means Center Collector Emitter Collector Base) TO-92 Abstract: .. • Refer to 2N6515 for graphs. Electrical Characteristics Ta=25 �C unless otherwise noted. * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% Symbol Parameter Value Units. VCBO Collector-Base Voltage ..  Tags:   2N6517 2N6520	24.3 Kb	3 Pages	Original
	First line: 2N6518 2N6518 Collector-Emitter Voltage: VCEO= -250V Collector Dissipation: (max)=625mW Complement 2N6515 Abstract: .. Voltage: VCEO= -250V -250V • Collector Dissipation: PC max =625mW 625mW • Complement to 2N6515. 1. Emitter 2. Base 3. Collector. TO-92 TO-92 1. 0.46 �0.10. 1.27TYP 27TYP . R2.29 3.86MAX 86MAX . [1.27 �0.20] 1.27TYP 27TYP [1.27 �0.20 ..  Tags: 2N6518   2N6518 2N6515	25.08 Kb	3 Pages	Original
	First line: 2N6517 2N6517 Collector-Emitter Voltage: VCEO=350V Collector Dissipation: (max)=625mW Complement 2N6520 Suffix "-C" means Center Collector Emitter Collector Base) TO-92 Abstract: .. • Refer to 2N6515 for graphs. Electrical Characteristics Ta=25 �C unless otherwise noted. * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% Symbol Parameter Value Units. VCBO Collector-Base Voltage ..  Tags:   2N6517 2N6520	23.79 Kb	3 Pages	Original
	First line: 2N6518 2N6518 Collector-Emitter Voltage: VCEO= -250V Collector Dissipation: (max)=625mW Complement 2N6515 Abstract: .. Voltage: VCEO= -250V -250V • Collector Dissipation: PC max =625mW 625mW • Complement to 2N6515. 1. Emitter 2. Base 3. Collector. TO-92 TO-92 1. 0.46 �0.10. 1.27TYP 27TYP . R2.29 3.86MAX 86MAX . [1.27 �0.20] 1.27TYP 27TYP [1.27 �0.20 ..  Tags:   2N6518 2N6515	24.58 Kb	3 Pages	Original
	First line: BB505 2n2222 smd BC547 smd 1N4148(SOD-123) BF963 Leaded Devices 1N4001 1N4002 1N4003 1N4004 1N4001 (2x) 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 SMD-Packages SOD-123 SOD-323 SCD-80 SOT-23 SOT143 SOT-323 SOT-343 SOT-363 SCT-595 SOT-89 BAW78A BAW78B BAW78C BAW78D BAW79A BAW79B BAW79C BAW79D SOT-223 Abstract: .. 2N6515 BFN24 BFN24 BFN16 BFN16 BFN36 BFN36 2N6516 2N6516 BFN26 BFN26 BFN18 BFN18 BFN38 BFN38 2N6518 2N6518 BFN25 BFN25 BFN17 BFN17 BFN37 BFN37 2N6519 2N6519 BFN27 BFN27 BFN19 BFN19 BFN39 BFN39 2N6718 2N6718 BCX41 BCX41 2N6724 2N6724 BCV29 BCV29 BCP29 BCP29 2N6725 2N6725 BCV29 BCV29 BCP29 BCP29 BA282 BA282 BA582 BA582 BA592 BA592 BA892 BA892 ..  Tags: BF963 1N4148(SOD-123) BC547 smd 2n2222 smd BB505 transistors sot-223  SOT-343  sot-323 bc  sot-23 4X BAV70  SOT-23 2N2222  smd diode T3  smd bc549  SMD BC547  smd 2n2907a  smd 2n2222  SMBTA93   1N4001 1N4002 1N4003 1N4004 1N4148	26.72 Kb	7 Pages	Original
	First line: MPS751 equivalent mps404a 2N5963 Small Signal Transistors TO-92 Case (Continued) TO-92 TYPE DESCRIPTION LEAD VCBO VCEO CODE *VCES VEBO ICBO (nA) *ICES *ICEV *hFE (1kHZ) 1,200 20,000 14,000 1,000 4,000 10,000 1,400 2,000 200,000 140,000 ---300 ----300 (mA) (SAT) (mA) TO-92-18R Abstract: .. 2N6515 NPN HIGH VOLTAGE EBC 250 250 6.0 50 150 45 220 10 50 1.0 50 6.0 40 - - - - 2N6516 2N6516 NPN HIGH VOLTAGE EBC 300 300 6.0 50 200 40 200 10 50 1.0 50 6.0 40 - - - - 2N6517 2N6517 NPN HIGH VOLTAGE EBC 350 350 6.0 50 250 20 ..  Tags: 2N5963 MPS751 equivalent MPS751  MPS750  MPS404A  MPS3704  2N5831  2N5823  2N5818  2N5816  2n5812   datasheet abstract..	20.02 Kb	1 Pages	Original
	First line: 2N6516 2N6516 Collector-Emitter Voltage: VCEO=300V Collector Dissipation: (max)=625mW Complement 2N6519 Abstract: .. • Refer to 2N6515 for graphs. Electrical Characteristics Ta=25 �C unless otherwise noted. * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% Symbol Parameter Value Units. VCBO Collector-Base Voltage ..  Tags:   2N6516 2N6519	23.46 Kb	3 Pages	Original
	First line: 2N5963 Small Signal Transistors TO-92 Case (Continued) TO-92 TYPE DESCRIPTION LEAD VCBO VCEO CODE *VCES VEBO ICBO (nA) *ICES *ICEV *hFE (1kHZ) 1,200 20,000 14,000 1,000 4,000 10,000 1,400 2,000 200,000 140,000 ---300 ----300 (mA) (SAT) (mA) TO-92-18R Abstract: .. 2N6515 NPN HIGH VOLTAGE EBC 250 250 6.0 50 150 45 220 10 50 1.0 50 6.0 40 - - - - 2N6516 2N6516 NPN HIGH VOLTAGE EBC 300 300 6.0 50 200 40 200 10 50 1.0 50 6.0 40 - - - - 2N6517 2N6517 NPN HIGH VOLTAGE EBC 350 350 6.0 50 250 20 ..  Tags: 2N5963   datasheet abstract..	31.23 Kb	1 Pages	Original
	First line: TO-92 Case (Continued) TO-92 TO-92-18R type family lead code vcbo vceo Vebo 'cbo (na) vcbo <ma) vce(s; HT)@ (mA) (PF) (MHz) (dB) toff 'to-92-18r *Vces *'ces **'cev *Crb *typ 2n5812 AMPL/SWITCH CBE* 0.75 2n5813 AMPL/SWITCH CBE* 0.75 2n5816 AMPL/SWITCH CBE* 0.75 Abstract: .. 2n6515 NPN HIGH VOLTAGE EBC 250 250 6.0 50 150 45 220 10 50 1.0 50 6.0 40 .. .. 2n6516 2n6516 NPN HIGH VOLTAGE EBC 300 300 6.0 50 200 40 200 10 50 1.0 50 6.0 40 .. .. 2n6517 2n6517 NPN HIGH VOLTAGE EBC 350 350 6.0 50 ..  Tags:   datasheet abstract..	86.78 Kb	1 Pages	OCR Scan
	First line: 2n2222a smt TIP122 smd C5198 2N2907A smt bd140 SMD equivalent Transistors Small Signal Medium Power Power Darlington MOSFET CDIL Semiconductors Worldwide Reach Product Profile Transistors Product Range Abstract: .. 2N6515 2N6516 2N6516 2N6517 2N6517 2N6519 2N6519 2N6520 2N6520 BC167 BC167 BC167A BC167A BC167B BC167B BC168 BC168 BC168B BC168B BC170 BC170 BC182 BC182 ..  Tags: bd140 SMD equivalent 2N2907A smt C5198 TIP122 smd 2n2222a smt   datasheet abstract..	724.82 Kb	4 Pages	Original
	First line: BC170 TRANSISTOR BC170B BC170C BC170B transistor BC170 TO-92 Plastic Package Transistors (NPN) Maximum Ratings .Electrical Characteristics Unless Otherwise Specified) Type ^CBO Vceo Vebo 'cBO 'ces VCE(SM) VBE|SAT) Freq CDIL &(V) 1mA) fmA) (pF) (MHz) (dB) (MHz) Case Style 2N5S15 0.625 0.05 0.75 T Abstract: .. 2N6515 Ic Po Vceo VCEO Veeo 'I V V A W ,~in Min Min @Te=25' �ICBO Vce ICES VeE hfE @ Ie & VCE jJA @ V JV\ @ 'I rnA V Max Max Min Max ,Electrical Characteristics Ta::25'C, Unless ..  Tags: transistor BC170 BC170B BC170C TRANSISTOR BC170B BC170   datasheet abstract..	245.92 Kb	2 Pages	OCR Scan
	First line: MPS650, MPS651; MPS750, MPS751 MPS651 MPS751 Preferred Devices Amplifier Transistors Abstract: .. 2N6515/D. LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303 675 2175 or 800 344 3860 Toll Free USA/Canada ..  Tags: MPS751  MPS750   MPS650 MPS651 MPS750 MPS751	65.04 Kb	5 Pages	Original
	First line: 79L12 2SC3358 78l05 sot-23 ic 565 po102* MICROWAVE TRASISTORS Type n-p-n MMBR5031 2SA1778 2SC3770 2SC4269 MMBR5179 2SC3837K 2SC3545 2SC3771 2SA1669 2SC4364 2SC4270 2SC4365 2SC3838K BFS17,BFS17A 2SC3841 BFR92A BFR93 2SC4569 BFR93P 2SC3774 BFR92P 2SC3775 BFR93A BFR92 2SC4568 2SC4857 MMBR911 2SC5106 2S Abstract: .. 2N6515 100 50 1.0 0.9 250 500 800. 2N6516 2N6516 100 45 1.0 0.9 300 500 800. 2N6517 2N6517 100 30 1.0 0.9 350 500 800. ZTX458 ZTX458 50 100 0.5 400 300 800. ZTX658 ZTX658 50 50 0.5 400 500 800. BF391 BF391 100 40 2.0 2.0 200 500 800. BF392 BF392 100 40 2.0 ..  Tags: po102* ic 565 78l05 sot-23 2SC3358 79L12   2SC3770 2SC4269 2SC3837K 2SC3545 2SC3771 2SC4364 2SC4270 2SC4365 2SC3838K 2SC3841 2SC4569 2SC3774 2SC3775 2SC4568 2SC4857 2SC5106 2SC5109 2SC4092 2SC3606 2SC3356 2SC4864 2SC4093 2SC3776 2SC3777 2SC3778 2SC3779 2SC3355 2SA1778 2SA1669	228.62 Kb	10 Pages	Original
	First line: 78L12 sot-89 MMBR571 79L12 79L05(SO-8) 2sc3358 TRASISTORS Type n-p-n MMBR5031 2SA1778 2SC3770 2SC4269 MMBR5179 2SC3837K 2SC3545 2SC3771 2SA1669 2SC4364 2SC4270 2SC4365 2SC3838K BFS17,BFS17A 2SC3841 BFR92A BFR93 2SC4569 BFR93P 2SC3774 BFR92P 2SC3775 BFR93A BFR92 2SC4568 2SC4857 MMBR911 2SC5106 2SC510 Abstract: .. 2N6515 100 50 1.0 0.9 250 500 800. 2N6516 2N6516 100 45 1.0 0.9 300 500 800. 2N6517 2N6517 100 30 1.0 0.9 350 500 800. ZTX458 ZTX458 50 100 0.5 400 300 800. ZTX658 ZTX658 50 50 0.5 400 500 800. BF391 BF391 100 40 2.0 2.0 200 500 800. BF392 BF392 100 40 2.0 ..  Tags: 2sc3358 79L05(SO-8) 79L12 MMBR571 78L12 sot-89   2SC3770 2SC4269 2SC3837K 2SC3545 2SC3771 2SC4364 2SC4270 2SC4365 2SC3838K 2SC3841 2SC4569 2SC3774 2SC3775 2SC4568 2SC4857 2SC5106 2SC5109 2SC4092 2SC3606 2SC3356 2SC4864 2SC4093 2SC4858 2SC4862 2SC4865 2SC3776 2SC3777 2SC3778 2SC3779 2SC3355 2SA1778	175.63 Kb	11 Pages	Original
	First line: 2N5550 EBC 2N3906 CBE MPS751 equivalent PNP 2N2923* 2N3906 EBC Small Signal Transistors TO-92 Case TYPE LEAD CODE Abstract: .. 2N6515 NPN HIGH VOLTAGE EBC 250 250 6.0 50 150 45 220 10 50 1.0 50 6.0 40 - - - - 2N6516 2N6516 NPN HIGH VOLTAGE EBC 300 300 6.0 50 200 40 200 10 50 1.0 50 6.0 40 - - - - 2N6517 2N6517 NPN HIGH VOLTAGE EBC 350 350 6.0 50 250 20 ..  Tags: 2N3906 EBC PNP 2N2923* MPS751 equivalent 2N3906 CBE 2N5550 EBC TA7368P*  PNP 2N3906  PN5910  PN5142*  PN3694  MPSD54  MPS8099*  MPS751  MPS750  MPS6563  MPS5308   datasheet abstract..	50.85 Kb	6 Pages	Original
	First line: ss8050 equivalent MPSA18 BC550 KSA1015 SS8050 MPSA92(KSP92) equivalent Small Signal General Purpose Products VCEO VCBO VEBO @VCE (mA) Saturation Voltage (sat) (mA) (mA) SOT-223 Configuration BCP68 FZT649 NZT6714 PZT3904 PZT2222A NZT6715 BCP54 BCP55 NZT560A NZT560 NZT651 PZTA06 NZT6717 BCP56 PZTA42 F Abstract: .. 2N6515 250 250 6 0.5 50 300 10 30 1 50 5. KSC2330 KSC2330 300 300 7 0.1 40 240 10 20 0.5 10 1. KSP42 KSP42 300 300 6 0.5 40 - 10 30 0.5 20 2. MPSA42 MPSA42 300 300 6 0.5 40 - 10 30 0.5 20 2. 2N6516 2N6516 300 300 6 0.5 45 270 10 30 1 50 5. KSP45 KSP45 350 400 6 0.3 ..  Tags: MPSA92(KSP92) equivalent KSA1015 MPSA18 BC550 transistor SS8550  transistor kst2222a  TN3440A  SS9012  SS9011  ss8550 sot-23  ss8050 equivalent  SS8050  PZTA06  PZT2222A  PN930*   FZT649 NZT6714 PZT3904 PZT2222A NZT6715 NZT560A NZT651 NZT6717	222.11 Kb	16 Pages	Original
	First line: 1005 NPN SVT300-10* SVT6251 Type: SSP11N60S5 Notes: Breakdown Voltage: Continuous Current: RDS(on) Ohm: Trans Conductance Mhos: Trans Conductance Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching Case Style: Polarity: Industry Type: SSP Abstract: .. STI Type: 2N6515 Notes: Polarity: NPN Power Dissipation: .625 VCBO: 250 VCER: 250 ICBO: 150 ICBO A: .05 hFE: 45 hFE A: 50 VCE: .50 VBE: .90 IC: 30 COB: 6.0 fT: 40 Case Style: TO-206AF TO-206AF /TO-72 TO-72 Industry ..  Tags: SVT6251 SVT300-10* 1005 NPN 2N6534 hfe 2500   2N6488	104.07 Kb	77 Pages	Original
	First line: 2907A PNP bipolar transistors Data sheet and equivalents of IR 238B FET marking JV SOD323 TRANSISTOR bH-16 TRANSISTOR AH-16 DL126/D Rev. Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs Diodes Small-Signal Device Data Abstract: .. 2N6515 ‐ 250 500 50 300 40 0.3. Case 29 11 Page 1100 97. MMBT6517LT1 MMBT6517LT1 ‐ 350 500 15 ‐ 40 ‐ 647. ‐ MMBT6520LT1 MMBT6520LT1 350 500 15 ‐ 40 ‐ 651. MMBTA42LT1 MMBTA42LT1 ‐ 300 500 40 ‐ 50 ‐ 668. ‐ MMBTA92LT1 MMBTA92LT1 300 500 25 ‐ 50 ‐ TO‐236AB 236AB , SOT‐23. Case ..  Tags: marking JV SOD323 Data sheet and equivalents of IR 238B FET 2907A PNP bipolar transistors tsop6 marking 718  transistor marking 1am  TRANSISTOR FS 2025  TRANSISTOR bH-16  transistor BC548  TRANSISTOR BC337-25 PNP  transistor bc icbo nA npn  TRANSISTOR BC 416 b pnp  TRANSISTOR AH-16  Tektronix 464  t1,t2 BC548   DL126 D	15260.03 Kb	1135 Pages	Original
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	2N6515	N/A	Silicon NPN	Specification
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