Datasheet Search Results			1 - 37 of about 37 for 2N6427
	2N6427	Central Semiconductor	SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY)	374.06 Kb,  4 Pages.
	2N6427	Central Semiconductor	Leaded Small Signal Transistor Darlington	20.02 Kb,  1 Pages.
	2N6427	Central Semiconductor	N/A	60.25 Kb,  1 Pages.
	2N6427	Continental Device India Limited	Semiconductor Device Data Book 1996	101.15 Kb,  1 Pages.
	2N6427	Fairchild Semiconductor	NPN Darlington Transistor	93.23 Kb,  2 Pages.
	2N6427	Fairchild Semiconductor	NPN Darlington Transistor	466.19 Kb,  10 Pages.
	2N6427	Motorola	European Master Selection Guide 1986	49.98 Kb,  1 Pages.
	2N6427	Motorola / Freescale Semiconductor	Bipolar Transistor, NPN Silicon Annular Darlington Transistor	528.43 Kb,  6 Pages.
	2N6427	National Semiconductor	NPN Transistors / DARLINGTON	120.79 Kb,  4 Pages.
	2N6427	National Semiconductor	NPN Darlington Transistors	33.97 Kb,  1 Pages.
	2N6427	National Semiconductor	NPN Transistors / DARLINGTON	142.64 Kb,  4 Pages.
	2N6427	National Semiconductor	NPN Darlington Transistor	49.39 Kb,  2 Pages.
	2N6427	National Semiconductor	NPN Darlington Transistor	69.9 Kb,  1 Pages.
	2N6427	National Semiconductor	NPN Darlington Transistor	51.19 Kb,  2 Pages.
	2N6427	On Semiconductor	TRANS DARLINGTON NPN 40V 0.5A 3TO-92	108.55 Kb,  6 Pages.
	2N6427	On Semiconductor	Darlington Transistors(NPN Silicon)	153.16 Kb,  6 Pages.
	2N6427	Philips Semiconductors / NXP Semiconductors	Small-signal Transistors	4.37 Kb,  1 Pages.
	2N6427	Philips Semiconductors / NXP Semiconductors	NPN Darlington transistor	46.26 Kb,  8 Pages.
	2N6427	Samsung Electronics	NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR	68.53 Kb,  2 Pages.
	2N6427	Siemens Semiconductors	Cross Reference Guide 1998	26.71 Kb,  7 Pages.
	2N6427	Sinyork Co., Ltd.	Mini size of Discrete semiconductor elements	494.27 Kb,  15 Pages.
	2N6427	Sprague	Small Signal TO-92 Plastic Transistors	370.91 Kb,  5 Pages.
	2N6427	N/A	Shortform Transistor Datasheet Guide	87.07 Kb,  1 Pages.
	2N6427	N/A	Shortform IC and Component Datasheets (Plus Cross Reference Data)	99.86 Kb,  1 Pages.
	2N6427	N/A	Semiconductor Master Cross Reference Guide	113.85 Kb,  1 Pages.
	2N6427_D26Z	Fairchild Semiconductor	NPN Darlington Transistor	466.18 Kb,  10 Pages.
	2N6427-D26Z	Fairchild Semiconductor	TRANS DARLINGTON NPN 40V 1.2A 3TO-92 TAPE AND Reel	466.18 Kb,  10 Pages.
	2N6427_D27Z	Fairchild Semiconductor	NPN Darlington Transistor	466.18 Kb,  10 Pages.
	2N6427-D27Z	Fairchild Semiconductor	TRANS DARLINGTON NPN 40V 1.2A 3TO-92 TAPE AND Reel	466.18 Kb,  10 Pages.
	2N6427-D28Z	Fairchild Semiconductor	TRANS DARLINGTON NPN 40V 1.2A 3TO-92	466.18 Kb,  10 Pages.
	2N6427_D75Z	Fairchild Semiconductor	NPN Darlington Transistor	466.18 Kb,  10 Pages.
	2N6427-D75Z	Fairchild Semiconductor	TRANS DARLINGTON NPN 40V 1.2A 3TO-92 AMMO	466.18 Kb,  10 Pages.
	2N6427-D81Z	Fairchild Semiconductor	TRANS DARLINGTON NPN 40V 1.2A 3TO-92	466.18 Kb,  10 Pages.
	2N6427G	On Semiconductor	TRANS DARLINGTON NPN 40V 0.5A 3TO-92 BOX	108.55 Kb,  6 Pages.
	2N6427_NL	Fairchild Semiconductor	TRANS DARLINGTON NPN 40V 1.2A 3TO-92	466.18 Kb,  10 Pages.
	2N6427RLRA	On Semiconductor	Small Signal Darlington NPN	108.54 Kb,  6 Pages.
	2N6427RLRAG	On Semiconductor	Small Signal Darlington NPN	108.55 Kb,  6 Pages.

Fulltext Datasheet Results		1 - 50 of about 73 for 2N6427
	First line: NPN Silicon Epitaxial Planar Transistor CP327V Small Signal Transistor NPN- Silicon Darlington Transistor Chip Abstract: .. PRINCIPAL DEVICE TYPES 2N6426 2N6426 2N6427 CMPT6427 CMPT6427 CMPTA13 CMPTA13 CMPTA14 CMPTA14 CXTA14 CXTA14 CZTA14 CZTA14 MPSA13 MPSA13 MPSA14 MPSA14 . GEOMETRY. PROCESS DETAILS. R0 24 -August 2005 Process EPITAXIAL PLANAR. Die Size 23 x 23 MILS. Die Thickness ..  Tags: NPN Silicon Epitaxial Planar Transistor transistor  NPN SMALL SIGNAL TRANSISTOR datasheet  npn darlington transistor  MPSa14 equivalent  mpsa14  MPSA13  CXTA14  "Darlington Transistor"   CP327V	35.92 Kb	1 Pages	Original
	First line: equivalent mpsa14 CP307 Silicon Darlington Transistor Chip Abstract: .. PRINCIPAL DEVICE TYPES 2N6426 2N6426 2N6427 CMPT6427 CMPT6427 CMPTA13 CMPTA13 CMPTA14 CMPTA14 CXTA14 CXTA14 CZTA14 CZTA14 MPSA13 MPSA13 MPSA14 MPSA14 . Process EPITAXIAL PLANAR. Die Size 27 x 27 MILS. Die Thickness 9.0 MILS. Base Bonding Pad Area 5.3 x 3.8 MILS ..  Tags: equivalent mpsa14 MPSa14 equivalent  MPSA14  MPSA13  Darlington transistor  DARLINGTON  "Darlington Transistor"   CP307	60.24 Kb	1 Pages	Original
	First line: CP307 Small Signal Transistor CP307 Silicon Darlington Transistor Chip Abstract: .. GEOMETRY. PROCESS DETAILS. PRINCIPAL DEVICE TYPES 2N6426 2N6426 . 2N6427. CMPT6427 CMPT6427 . CMPTA13 CMPTA13 . CMPTA14 CMPTA14 ..  Tags: CP307   CP307	396.18 Kb	2 Pages	Original
	First line: ny transistor ELECTRONIC TRANSISTOR CORP SILICON TRANSISTOR CORP transistor Small Signal Transistor Silicon Darlington Transistor Chip CP307 Abstract: .. PRINCIPAL DEVICE TYPES 2N6426 2N6426 2N6427 CMPT6427 CMPT6427 CMPTA13 CMPTA13 CMPTA14 CMPTA14 CXTA14 CXTA14 CZTA14 CZTA14 MPSA13 MPSA13 MPSA14 MPSA14 . Process EPITAXIAL PLANAR. Die Size 27 x 27 MILS. Die Thickness 9.0 MILS. Base Bonding Pad Area 5.3 x 3.8 MILS ..  Tags: ELECTRONIC TRANSISTOR CORP ny transistor SILICON TRANSISTOR CORP   CP307	208.36 Kb	2 Pages	Original
	First line: SILICON TRANSISTOR CORP CP307 Abstract: .. PRINCIPAL DEVICE TYPES 2N6426 2N6426 2N6427 CMPT6427 CMPT6427 CMPTA13 CMPTA13 CMPTA14 CMPTA14 CXTA14 CXTA14 CZTA14 CZTA14 MPSA13 MPSA13 MPSA14 MPSA14 MPSA27 MPSA27 . Process EPITAXIAL PLANAR. Die Size 27 x 27 MILS. Die Thickness 9.0 MILS. Base Bonding Pad Area 5.3 ..  Tags: SILICON TRANSISTOR CORP   datasheet abstract..	218.98 Kb	2 Pages	Original
	First line: 2N6427 MMBT6427 2N6427 MMBT6427 Abstract: .. 2N6427 MMBT6427 MMBT6427 . Absolute Maximum Ratings* TA = 25 �C unless otherwise noted. *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES ..  Tags:   2N6427	91.95 Kb	2 Pages	Original
	First line: 26427 MMBT6427 26427 Abstract: .. 2N6427 MMBT6427 MMBT6427 . Absolute Maximum Ratings* TA = 25 �C unless otherwise noted. *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES ..  Tags:   2N6427	99.81 Kb	2 Pages	Original
	First line: "low power darlington" BC516 equivalent� MPSA25 transistor BC516 MPSA14 Small-signal Transistors LEADED DEVICES (continued) LOW-POWER DARLINGTON TRANSISTORS TYPE NUMBER 2N6427 BC517 BC617 BC618 MPSA13 MPSA14 MPSA25 MPSA26 MPSA27 PACKAGE TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 VCES max. Abstract: .. 2N6427 TO-92 TO-92 30 500 625 10000 100000 125 ‐ ‐ 188. BC517 BC517 TO-92 TO-92 30 500 500 30000 >30000 220 typ. ‐ BC516 BC516 258. BC617 BC617 TO-92 TO-92 40 800 500 4000 >4000 155 ‐ ‐ 279. BC618 BC618 TO-92 TO-92 55 800 500 2000 >2000 155 ‐ ‐ 279. MPSA13 MPSA13 TO ..  Tags: transistor BC516 BC516 equivalent "low power darlington" MPSA64  MPSA63  MPSA26  MPSA25  MPSa14 equivalent  mpsa14  darlington  BC618 equivalent to  BC618  BC617  bc517   2N6427	4.36 Kb	1 Pages	Original
	First line: Darlington Transistors Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VC Abstract: .. 2N6426 2N6426 2N6427 *ON Semiconductor Preferred Device. CASE 29‐04, STYLE 1 TO‐92 TO‐226AA 226AA * 1 2 3. COLLECTOR 3. BASE 2. EMITTER 1. 2N6426 2N6426 2N6427. http://onsemi.com 2. ELECTRICAL CHARACTERISTICS TA = 25ΥC ..  Tags:   datasheet abstract..	105.36 Kb	8 Pages	Original
	First line: Darlington Transistors Abstract: .. 2N6426 2N6426 2N6427 *ON Semiconductor Preferred Device. CASE 29‐04, STYLE 1 TO‐92 TO‐226AA 226AA * 1 2 3. COLLECTOR 3. BASE 2. EMITTER 1. 2N6426 2N6426 2N6427. http://onsemi.com 2. ELECTRICAL CHARACTERISTICS TA = 25ΥC ..  Tags:   datasheet abstract..	105.6 Kb	8 Pages	Original
	First line: 2N6426*, 2N6427 Darlington Transistors Abstract: .. 2N6426 2N6426 *, 2N6427 Preferred Device. Darlington Transistors NPN Silicon. Features. ∞ Pb-Free Packages are Available* ∞ Device Marking: Device Type, e.g., 2N6426 2N6426 , Date Code. MAXIMUM RATINGS. Rating ..  Tags:   2N6426 2N6427	108.56 Kb	6 Pages	Original
	First line: 2N6426, 2N6427 2N6426 Preferred Device Darlington Transistors Abstract: .. 2N6426 2N6426 , 2N6427 2N6426 2N6426 is a Preferred Device. Darlington Transistors NPN Silicon. Features. • These are Pb Free Devices* MAXIMUM RATINGS. Rating Symbol Value Unit. Collector Emitter Voltage VCEO ..  Tags: 2N6426*   2N6426 2N6427	75.4 Kb	6 Pages	Original
	First line: 26427 MMBT6427 Darlington Transistor This device designed applications requiring extremely high current gain collector currents Sourced from Process MPSA14 characteristics. Absolute Maximum Ratings* unless otherwise noted Symbol Parameter Value Units vceo Collector-Emitter Voltage VcBO Collector-Bas Abstract: .. Discrete POWER & Signal Technologies N 2N6427 MMBT6427 MMBT6427 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 ..  Tags:   datasheet abstract..	67.92 Kb	2 Pages	OCR Scan
	First line: 26427 MMBT6427 TO-92 SOT-23 Mark: Darlington Transistor Abstract: .. Discrete POWER & Signal Technologies N 2N6427 MMBT6427 MMBT6427 'be TO-92 TO-92 SOT-23 SOT-23 B Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at ..  Tags:   datasheet abstract..	103.97 Kb	2 Pages	OCR Scan
	First line: I-OQ Discrete POWER Signal National Technologies Semiconductor'" 2N6427 Abstract: .. r-. CM to I-OQ CN CD CN 0 Discrete POWER & Signal National Technologies Semiconductor'" 2N6427 MMBT6427 MMBT6427 SOT-23 SOT-23 B Mark: 1V NPN Darlington Transistor This device is designed for applications requiring ..  Tags:   datasheet abstract..	69.72 Kb	2 Pages	OCR Scan
	First line: Transistor 2N5771 2N5771 MMBT5771 2N5771 MMBT5771 Abstract: .. 2N6427 MMBT6427 MMBT6427 . Absolute Maximum Ratings* TA = 25 �C unless otherwise noted. *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES ..  Tags: Transistor 2N5771 data sheet 2N5771  2N5771   2N5771	125.28 Kb	4 Pages	Original
	First line: SAMSUNG SEMICONDUCTOR Doomo EPITAXIAC 2N6427 SILICON Collector-Emitter Wotage: Collector Dissipation: (max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Abstract: .. SAMSUNG SEMICONDUCTOR INC 14E D â– â– 71b414a 71b414a Doomo 0 I NPN EPITAXIAC â– 2N6427 SILICON DARLINGTON TRANSISTOR. DARLINGTON TRANSISTOR †� Collector-Emitter Wotage: Vc �O=40V †� Collector Dissipation ..  Tags:   datasheet abstract..	87.01 Kb	2 Pages	OCR Scan
	First line: book, halfpage M3D186 Abstract: .. 2N6427 NPN Darlington transistor book, halfpage M3D186 M3D186 1997 Jul 04 2 Philips Semiconductors Product specification NPN Darlington transistor 2N6427 FEATURES • High current max. ..  Tags: ic str 6707   datasheet abstract..	46.26 Kb	8 Pages	Original
	First line: 0031533 NSCS Darlington Transistors NATL SEMICOND (DISCRETE Devices I'D (Ami) (Watts) (Volts) (Amps) Mill (MHz) Package 2N7051 20,000 T0-92{94) 1,000 20,000 2N7053 20,000 TO-226 Abstract: .. .4 6,000 100 2N5308 2N5308 0.3 7,000 70,000 2 1.4 200 200 60 T0-92 T0-92 94 0.4 20,000 100 2N6427 1 10,000 100,000 10 1.2 50 500 130 T0-92 T0-92 92 0.625 20,000 200,000 100 1.5 500 500 14,000 140,000 500 2N6548 2N6548 2 25,000 ..  Tags: D40K2*   datasheet abstract..	88.41 Kb	1 Pages	OCR Scan
	First line: Order this document 2N6426/D Darlington Transistors Abstract: .. 2N6427. IC = 100 mAdc, VCE = 5.0 Vdc 2N6426 2N6426 . 2N6427. IC = 500 mAdc, VCE = 5.0 Vdc 2N6426 2N6426 . 2N6427. hFE. 20,000 10,000. 30,000 20,000. 20,000 14,000. — — — — — — 200,000 100,000. 300,000 200,000. 200,000 140,000 ..  Tags: 2N6426   2N6426	153.17 Kb	6 Pages	Original
	First line: NATL SEMICOND OISCRETE bSD1130 00372b0 National T-33-21 Semiconductor 2N6427 MMBT6427 MPQ6427* HIII to-236 10-116 TO-92 (sot-23) TL/G/10100-7 TL/Q/10100-5 TUG/10100-1 Darlington Transistor Electrical Characteristics unless otherwise noted Svmbol Parameter Units CHARACTERISTICS V(br)ceo Collector-Emi Abstract: .. NATL SEMICOND OISCRETE HE D J bSD1130 bSD1130 00372b0 00372b0 ^ | National T-33-21 T-33-21 JlA Semiconductor 2N6427 MMBT6427 MMBT6427 MPQ6427 MPQ6427 * HIII to-236 to-236 c �e 10-116  �j TO-92 TO-92 sot-23 sot-23 TL/G/10100-7 E Ull TL/Q/10100-5 Bc TUG ..  Tags:   datasheet abstract..	61.77 Kb	2 Pages	OCR Scan
	First line: 2N6427 MMBT6427 2N6427 MMBT6427 Abstract: .. 2N6427 MMBT6427 MMBT6427 . Absolute Maximum Ratings* TA = 25 �C unless otherwise noted. *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES ..  Tags:   2N6427	471.08 Kb	10 Pages	Original
	First line: 2N6427 MMBT6427 2N6427 MMBT6427 Abstract: .. 2N6427 MMBT6427 MMBT6427 . Absolute Maximum Ratings* TA = 25 �C unless otherwise noted. *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES ..  Tags:   2N6427	466.19 Kb	10 Pages	Original
	First line: SAMSUNG SEMICONDUCTOR 000734b MPSA10 EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR Collector-Emitter Voltage: VCio=40V Collector Dissipation: (max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VcEO Abstract: .. Tj 150  �C Storage Temperature Tstg -55-150 †�c â– Refer to 2N6427 for graphs ELECTRICAL CHARACTERISTICS Ta=25 �C TO-92 TO-92 1 Emitter 2. Base 3. Collector Characteristic Symbol Test Conditions ..  Tags:   datasheet abstract..	225.57 Kb	7 Pages	OCR Scan
	First line: MPSA25 SMALL-SIGNAL TRANSISTORS PLASTIC (continued) Darlington Transistors (TO-92) Darlington amplifiers cascade transistors used applications requiring very high gain input impedance. These devices have monolithic construction. Absolute Max. Rating HFE<1> VCESAT Device BVCEO Bias Bias Comple- Abstract: .. 10 K 50 K 200 0.20 1.1 500 150 2N6426 2N6426 EBC 625 500 40 5.0 100 30 K 300 K 500 0.50 1.5 10 125 2N6427 EBC 625 500 40 5.0 100 20 K 200 K 500 0.50 1.5 10 125 MPSA12 MPSA12 EBC 625 500 20 3 5.0 10 20 K — 10 0.01 1.0 10 125 MPSA62 MPSA62 ..  Tags: MPSA25   datasheet abstract..	68.46 Kb	1 Pages	OCR Scan
	First line: T092 Plastic Package Transistors (NPN) Maxin atings Electrical Characteristics Unless Otherwise Specified) Type ^CBO ^CEO ^ebo 'cBO <MA) 'ces (CA) ^beisat) (rnA (PF) (MHz) (nsj Freq (dB) (MHz) CDIL Case Style 2N5172 0.25 TO-92-1 2N5209 0.625 0.0. 0.05 TO-92 2N5210 0.625 o.o: 0.05 TO-92 2N5219 0.6 Abstract: .. .625 0.6 0.05 100 60 80 80 500 1 10 50 5 5 5 0.15 0.2 0.25 0.8 1 1 10 1 50 4 100 500 10 TO-92 TO-92 •2N6427 40 40 12 0.625 0.5 0.05 30 10 20 14 100 200 140 10 100 500 5 5 5 1.2 1.5 50 2 500 5.4 7 1 2 10 TO-92 TO-92 2N6515 2N6515 250 250 6 0.625 ..  Tags:   datasheet abstract..	104.87 Kb	1 Pages	OCR Scan
	First line: TO*92 Plastic Package Transistors (NPN) Maximum Ratings Electrical Characteristics Unless Otherwise Specified) Type ^CBO Vceo 'cBO 'ces ^ceisatl beisatl '(oil) Freq CDIL (MA) (ma) (mA) (mA) (pF) (MHz) (mA) (nsi (dB) (MHz) Case Style 2N5172 0.15 0.25 TO-92-1 2N5209 0.625 0.05 0.05 TO-92 Abstract: .. .625 0.6 0.05 100 60 1 5 0.15 0.8 1 4 100 500 10 TO-92 TO-92 80 500 10 5 0.2 1 10 80 50 5 0.25 1 50 "2N6427 40 40 12 0.625 0.5 0.05 30 10 100 10 5 1.2 50 5.4 7 1 2 10 TO-92 TO-92 20 200 100 5 1.5 2 500 14 140 500 5 2N6515 2N6515 250 250 6 0.625 ..  Tags:   datasheet abstract..	119.64 Kb	1 Pages	OCR Scan
	First line: BAT16-046 2N2907 SOT-23 SMD BC547 2n2222 smd BC547 smd Leaded Devices 1N4001 1N4002 1N4003 1N4004 1N4001 (2x) 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 SMD-Packages SOD-323 SCD-80 SOT-23 SOT-143 SOT-323 SOT-343 SOT-363 SCT-595 SOT-89 BAW78A BAW78B BAW78C BAW78M BAW78D BAW79A BAW79B BAW79C BAW79D BA Abstract: .. 2N6426 2N6426 BCV27 BCV27 BCV29 BCV29 BCP29 BCP29 2N6427 BCV49 BCV49 BCP49 BCP49 2N6428 2N6428 2N6429 2N6429 2N6515 2N6515 BFN24 BFN24 BFN16 BFN16 BFN36 BFN36 2N6516 2N6516 BFN26 BFN26 BFN18 BFN18 BFN38 BFN38 2N6518 2N6518 BFN25 BFN25 BFN17 BFN17 BFN37 BFN37 2N6519 2N6519 BFN27 BFN27 BFN19 BFN19 BFN39 BFN39 2N6718 2N6718 BCX41 BCX41 2N6724 2N6724 ..  Tags: BC547 smd 2n2222 smd 2N2907 SOT-23 BAT16-046 transistors BFW16A  TMS1050  SOT-343  sot-23 4X BAV70  SOT-23 2N2222  smd bc549  SMD BC547  smd 2n2907a  smd 2n2222  SMBTA92  SMBTA63   1N4001 1N4002 1N4003 1N4004 1N4148	40.13 Kb	7 Pages	Original
	First line: Abstract: .. 2N6427. 40. 40. 12. 0.05. 30. 7. 130. 10. 05. WPSA12 WPSA12 WPSA13 WPSA13 . 20 30. 10 10. 100 100. 15 30. 05 125 10 05. 1.5. 100. NOTE ..  Tags:   datasheet abstract..	52.48 Kb	1 Pages	OCR Scan
	First line: BCY87 BC337 equivalent 2n1613 replacement replacement for 2n2905 replacement transistor BC337 Small-signal Transistors Replacement list DISCONTINUED TYPE 2N1613 2N1711 2N1893 2N2219 2N2219A 2N2222/A 2N2369/A 2N2484 2N2905 2N2905A 2N2906 2N2906A 2N2907/A 2N3019/01 2N4031/4033 2N4036 2N4124 2N4126 2N5 Abstract: .. 2N6427 Replaced by MPSA14 MPSA14 . 2PA1015BL 2PA1015BL Replaced by 2PA1015GR 2PA1015GR equivalent type. 2PA733K 2PA733K Replaced by 2PA733P 2PA733P equivalent type. 2PA733Q 2PA733Q Replaced by 2PA733P 2PA733P equivalent type. 2PC945K 2PC945K Replaced by 2PA733P 2PA733P ..  Tags: 2n1613 replacement BC337 equivalent BCY87 Type 51  transistor equivalent type  transistor bcy70  transistor bc549  transistor bc160  transistor 2N5415  transistor 2N2905  Transistor 2N2219A  semiconductor bf591  replacement transistor BC337  replacement for 2n2905   2N1613 2N1711 2N1893 2N2219 2N2219A 2N2222 A 2N2369 A 2N2484 2N2905 2N2905A 2N2906 2N2906A 2N2907 A 2N3019 01 2N4031 4033 2N4036 2N4124 2N4126 2N5087 2N5400 2N5415 5416 2N6427	89.26 Kb	7 Pages	Original
	First line: Small Signal Darlington Products VCEO VCBO VEBO @VCE (mA) Saturation Voltage (sat) (mA) (mA) SOT-223 Configuration PZTA14 PZTA28 NZT7053 20000 10000 1000 20000 1000 Abstract: .. 2N6427 40 40 12 1.2 20000 200000 5 100 1.5 500 0.5. 2N6426 2N6426 40 40 12 1.2 30000 300000 5 100 1.5 500 0.5. BSR50 BSR50 45 60 5 - 1000 - 10 150 1.3 500 0.5. KSP26 KSP26 50 50 10 0.5 10000 - 5 100 1.5 100 0.1. MPSA27 MPSA27 60 60 - - 10000 - 5 100 ..  Tags: mpsa63  MPSA12  KSP13*  BC516 equivalent   NZT7053	37.34 Kb	2 Pages	Original
	First line: BB505 2n2222 smd BC547 smd 1N4148(SOD-123) BF963 Leaded Devices 1N4001 1N4002 1N4003 1N4004 1N4001 (2x) 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 SMD-Packages SOD-123 SOD-323 SCD-80 SOT-23 SOT143 SOT-323 SOT-343 SOT-363 SCT-595 SOT-89 BAW78A BAW78B BAW78C BAW78D BAW79A BAW79B BAW79C BAW79D SOT-223 Abstract: .. 2N6426 2N6426 BCV27 BCV27 BCV29 BCV29 BCP29 BCP29 2N6427 SMBT6427 SMBT6427 BCV49 BCV49 BCP49 BCP49 2N6428 2N6428 SMBT6428 SMBT6428 2N6429 2N6429 SMBT6429 SMBT6429 2N6515 2N6515 BFN24 BFN24 BFN16 BFN16 BFN36 BFN36 2N6516 2N6516 BFN26 BFN26 BFN18 BFN18 BFN38 BFN38 2N6518 2N6518 BFN25 BFN25 BFN17 BFN17 BFN37 BFN37 2N6519 2N6519 BFN27 BFN27 ..  Tags: BF963 1N4148(SOD-123) BC547 smd 2n2222 smd BB505 transistors sot-223  SOT-343  sot-323 bc  sot-23 4X BAV70  SOT-23 2N2222  smd diode T3  smd bc549  SMD BC547  smd 2n2907a  smd 2n2222  SMBTA93   1N4001 1N4002 1N4003 1N4004 1N4148	26.72 Kb	7 Pages	Original
	First line: MPS751 equivalent mps404a 2N5963 Small Signal Transistors TO-92 Case (Continued) TO-92 TYPE DESCRIPTION LEAD VCBO VCEO CODE *VCES VEBO ICBO (nA) *ICES *ICEV *hFE (1kHZ) 1,200 20,000 14,000 1,000 4,000 10,000 1,400 2,000 200,000 140,000 ---300 ----300 (mA) (SAT) (mA) TO-92-18R Abstract: .. 2N6427 NPN DARLINGTON EBC 40 40 12 50 30 14,000 140,000 5.0 500 1.50 500 7.0 130 10 - - 2N6515 2N6515 NPN HIGH VOLTAGE EBC 250 250 6.0 50 150 45 220 10 50 1.0 50 6.0 40 - - - - 2N6516 2N6516 NPN HIGH VOLTAGE EBC 300 300 6.0 ..  Tags: 2N5963 MPS751 equivalent MPS751  MPS750  MPS404A  MPS3704  2N5831  2N5823  2N5818  2N5816  2n5812   datasheet abstract..	20.02 Kb	1 Pages	Original
	First line: 2N5963 Small Signal Transistors TO-92 Case (Continued) TO-92 TYPE DESCRIPTION LEAD VCBO VCEO CODE *VCES VEBO ICBO (nA) *ICES *ICEV *hFE (1kHZ) 1,200 20,000 14,000 1,000 4,000 10,000 1,400 2,000 200,000 140,000 ---300 ----300 (mA) (SAT) (mA) TO-92-18R Abstract: .. 2N6427 NPN DARLINGTON EBC 40 40 12 50 30 14,000 140,000 5.0 500 1.50 500 7.0 130 10 - - 2N6515 2N6515 NPN HIGH VOLTAGE EBC 250 250 6.0 50 150 45 220 10 50 1.0 50 6.0 40 - - - - 2N6516 2N6516 NPN HIGH VOLTAGE EBC 300 300 6.0 ..  Tags: 2N5963   datasheet abstract..	31.23 Kb	1 Pages	Original
	First line: TO-92 Case (Continued) TO-92 TO-92-18R type family lead code vcbo vceo Vebo 'cbo (na) vcbo <ma) vce(s; HT)@ (mA) (PF) (MHz) (dB) toff 'to-92-18r *Vces *'ces **'cev *Crb *typ 2n5812 AMPL/SWITCH CBE* 0.75 2n5813 AMPL/SWITCH CBE* 0.75 2n5816 AMPL/SWITCH CBE* 0.75 Abstract: .. .. 2N6426 2N6426 NPN DARLINGTON EBC 40 40 12 50 30 20,000 200,000 5.0 500 1.50 500 7.0 150 10 — 2n6427 NPN DARLINGTON EBC 40 40 12 50 30 14,000 140,000 5.0 500 1.50 500 7.0 130 10 .. 2n6515 2n6515 NPN HIGH VOLTAGE ..  Tags:   datasheet abstract..	86.78 Kb	1 Pages	OCR Scan
	First line: bc548b cross reference 2n5401 2n3904 mpsa92 MPSa06 equivalent mps2222 equivalent Small-signal Transistors Diodes PHILIPS TRANSISTORS CROSS REFERENCE COMPETITOR TYPE NUMBER 2N2925 2N3903 2N3904 2N3904 2N3905 2N3906 2N3906 2N4123 2N4124 2N4125 2N4400 2N4401 2N4401 2N4402 2N4403 2N4403 2N4410 2N5087 2N Abstract: .. 2N6427 MPSA14 MPSA14 2N6517 2N6517 MPSA44 MPSA44 2N6519 2N6519 MPSA92 MPSA92 2SA1036K 2SA1036K BSR15 BSR15 2SA1037AK 2SA1037AK 2PB709AS 2PB709AS 2SA1576A 2SA1576A ..  Tags: mps2222 equivalent MPSa06 equivalent mpsa92 2n5401 2n3904 bc548b cross reference UMH3N  SSTA14  SSTA13  SSTA05*  SST6427*  SMBTA56  RXT2222A  PZT2222A  pxt2222a  PUMX1  PMBT4401   2SC1651S 2SC2062S 2SC2411K 2SC2412K 2SC2413K 2SC4081 2SC4097 2SC4098 2SC4102 2SC4132 2SC4505 2SC4617 2SC4618 2SC4672 2SC4997 2SC4998 2SC5053 2SA1036K 2SA1037AK 2SA1576A 2SA1579 2SA1759 2SA1774 2SA1797 2SA1900 2SB1132 2SB1189 2SB1260 2SB1424 2SB1561 2N2925	239.78 Kb	9 Pages	Original
	First line: bc5488* bc816 BC5488 BC5578 transistor smd 1FT Transistors SOT-23 Case U.S. Specification (Preferred Series) 350mW BVCN 'cto MARKING SNNLAR TYPE DESCRIPTION (VOUS) (VOLTS) (VOUS) (VOUS) (VOUS) (mA> (VOUS) (mA) <pF) (MHz) CODE LEADED DEVICE CMPT918 NPNRFOSC 2N918 CMPT2222A PL/SWITCH 2N2222A CMP Abstract: .. CMPT6427 CMPT6427 NPN DARLINGTON 40 40 12 50 30 20.000 200,000 5.0 100 15 500 7.0 130 10 _ C1V 2N6427 NEW! CMPT6428 CMPT6428 NPN LOW NOISE 60 50 6.0 10 30 250 650 5.0 01 06 100 3.0 100 _ C1K 2N6428 2N6428 NEW! CMPT6429 CMPT6429 NPN LOW NOISE ..  Tags: transistor smd 1FT BC5578 BC5488 bc816 bc5488*   datasheet abstract..	121.98 Kb	1 Pages	OCR Scan
	First line: MPS-A13 pnp GES5307 CENTRAL SEMICONDUCTOR ~|~L T"29"29 SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY) ^'^OOmA OPERATING STORAGE TEMPERATURE TYPE VCEO (Max) VCE(S) CASE Amps Volts Watts Amps Volts Amps 2N5305 2,000 20,000 .002 2N5306 7,000 70,000 .002 2N5306A 7,000 70,000 .002 2N5307 2,000 20, Abstract: .. I TO-92 TO-92 EBC 2N6427 0.5 40 .625 20,000-200,000 0.1 1.5 0.5 — MPS-A12 MPS-A12 MPS-A62 MPS-A62 0.5 20 .625 20,000- 0.01 1.0 0.01 - MPS-A13 MPS-A13 MPS-A63 MPS-A63 0.5 30 .500 10,000- 0.1 1.5 0.1 125 MPS-A14 MPS-A14 MPS-A64 MPS-A64 0.5 30 .500 ..  Tags: GES5307 MPS-A13 pnp   datasheet abstract..	393.06 Kb	4 Pages	OCR Scan
	First line: HLB120A* BF452* 2n2955 XL1225 pcr150 Transistors, COSS EFEENCE EQUIVALENT TABLE Cross eference Table Abstract: .. 2N6427 2N6427 TO-92 TO-92 . 2N6517 2N6517 2N6517 2N6517 TO-92 TO-92 . 2N6520 2N6520 2N6520 2N6520 TO-92 TO-92 . 2N6668 2N6668 2N6668 2N6668 TO-220AB TO-220AB . 2N6718L 2N6718L 2N6718L 2N6718L TO-92 TO-92 . 2N7000 2N7000 2N7000 2N7000 TO-92 TO-92 . 2N7002 2N7002 2N7002 2N7002 SOT-23 SOT-23 . 2SA1015 2SA1015 2SA1015 2SA1015 TO-92 TO-92 . 2SA1300 2SA1300 2SA1300 2SA1300 TO-92 TO-92 ..  Tags: pcr150 2n2955 BF452* HLB120A* XL1225 transistor  XL1225 equivalent  XL1225  transistor BF422  transistor BC184  transistor 2sc2482  transistor 2sc2120  TO-252  TO-220AB transistor package  to-126 transistor  to-126   datasheet abstract..	636.82 Kb	7 Pages	Original
	First line: sprague 2N3799 TPQ2907A TPQA05 TPQ6700 TPQ3724* SERIES QUAD TRANSISTOR ARRAYS SERIES QUAD TRANSISTOR ARRAYS PRAGUE SERIES quad transistor arrays general-purpose silicon transistor arrays consisting four independent devices. Shown types, types, NPN/PNP complementary pairs. these devices furnished 14- Abstract: .. .0 100 125 10 8.0 2N6426 2N6426 TPQ6427 TPQ6427 50 40 12 100 30 5k 10k 10 5.0 100 5.0 1.5 2.0 100 125 10 8.0 2N6427 NOTES: 1. Base-emitter voltage shown is \tm at indicated lc, VCE = 5.0 V. SERIES TPQ QUAD TRANSISTOR ARRAYS ..  Tags: TPQ3724* TPQ6700 TPQA05 TPQ2907A sprague 2N3799   datasheet abstract..	334.34 Kb	5 Pages	OCR Scan
	First line: Diode 1N4008 1N4008 1N4008 diode 1N4548 BAX15 Diode Cross-Reference Guide Recommended Fairchild Device Abstract: .. 2N5087 2N5087 2N4401 2N4401 2N4402 2N4402 2N4402 2N4402 2N5087 2N5087 2N4401 2N4401 2N4402 2N4402 D45C11 D45C11 2N6076 2N6076 2N6426 2N6426 2N6427 2N6548 2N6548 2N6549 2N6549 2N6551 2N6551 TN6705A TN6705A TN6705A TN6705A 2N6555 2N6555 TN3019A TN3019A TN6705A TN6705A TN6705A TN6705A TN6728A TN6728A TN6728A TN6728A TN6714A TN6714A TN6715A TN6715A TN6715A TN6715A TN6717A TN6717A ..  Tags: BAX15 1N4548 1N4008 diode 1N4008 Diode 1N4008 you by my side  U1899*  u1898 cross  U1898  U1897  tn6725  TN4037*  TN3725  TMPTA06  TMPT5401  TMPT4403   datasheet abstract..	77.65 Kb	23 Pages	Original
	First line: 2N5116* ultraviolet sensor photodiode amplifier OPT211 MONOLITHIC PHOTODIODE AMPLIFIER Abstract: .. 2N6427. �. OPT211 OPT211 9. Best signal-to-noise ratio is achieved by using the highest practical ..  Tags: photodiode amplifier ultraviolet sensor 2N5116* Burr Brown application bulletin transimpedance am   OPT211	134.15 Kb	9 Pages	Original
	First line: NSDU45 2N5306 NATIONAL SEMICONDUCTOR NATL SEMI DISRETE f.501130 D0370b0 Abstract: .. 2N6427. 40. 40. 12. 0.05. 30. 7. 130. 10. 05. � 2N6S4a. 50. 40. 12. 0.1. 30. 7. 1. 200. 05. � 2N6549 2N6549 . 50. 40. 12. 0.1. 30. 150,000. 7. 1 ..  Tags: 2N5306 NATIONAL SEMICONDUCTOR NSDU45   datasheet abstract..	139.38 Kb	4 Pages	OCR Scan
	First line: SE9300 NATL SENICOND {DISCRETE} bSD113D DOBS435 1130 NATL SEMICOND. (DISCRETE) 3543 Abstract: .. 2N6427. 40. 40. 12. 0.05. 30. 7. 130. 10. 05. /1. " 2. ::0 v. ~ 2N6548 2N6548 . 50. 40. 12. 0.1. 30. m -I m. 2N6549 2N6549 . 50. 40. 12. 0.1. 30. 150 ..  Tags: SE9300   datasheet abstract..	161.24 Kb	4 Pages	OCR Scan
	First line: 2N5116* OPT211 MONOLITHIC PHOTODIODE AMPLIFIER Abstract: .. 2N6427. �. OPT211 OPT211 9. Best signal-to-noise ratio is achieved by using the highest practical ..  Tags: 2N5116* Burr Brown application bulletin transimpedance am  AB-034   OPT211	118.54 Kb	9 Pages	Original
	First line: TN6* Saturated Switches Device Case Style VCES* VEBO VCBO VCE(SAT) VBE(SAT) t(off) (ns) Test Conditions Process (nA) Abstract: .. 2N6427 TO-92 TO-92 92 40 40 12 0.05 30 10,000. 20,000 14,000. 100,000 200,000 140,000. 10 100 500. 5 5 5. 1.2. 1.5 2. 50. 500. 7 130 10 05. MPSA12 MPSA12 TO-92 TO-92 92 20 10 100 15 20,000 10 5 1 10 05. MPSA13 MPSA13 TO-92 TO-92 92 30 10 100 30 10 ..  Tags: TN6* MPSH20  MPSA12  2N5830 National  2N5830  2N5089  2N3417  100-1a   datasheet abstract..	106.14 Kb	12 Pages	Original
	First line: 2N2926-2* 2N3404 NPN OSPRflGUE BIPOLAR TRANSISTORS BIPOLAR TRANSISTORS MARK RELIABILITY SERIES TRANSISTORS Small-signal TO-92 plastic transistors. JEDEC '2N' registered types. Catalog Number Case Style (mW) Polarity VcBO Min. VcEO Min. Vebo Min. IcBO InA) Max. Min. Max. (mA) VcE(SAT) Max. Min. Max. Abstract: .. 20000 200000 10 5 30000 300000 100 5 20000 200000 500 5 1.20 — — 50 1.50 — 2 500 7 150 — 10 — 10 16 2N6427 CT 625 NPN 40 40 12 50 30 10000 100000 10 5 20000 200000 100 5 14000 140000 500 5 1.20 — — 50 1.50 — 2 500 7 130 ..  Tags: 2N3404 NPN 2N2926-2*   datasheet abstract..	389.44 Kb	5 Pages	OCR Scan
	First line: 2N5550 EBC 2N3906 CBE MPS751 equivalent PNP 2N2923* 2N3906 EBC Small Signal Transistors TO-92 Case TYPE LEAD CODE Abstract: .. 2N6427 NPN DARLINGTON EBC 40 40 12 50 30 14,000 140,000 5.0 500 1.50 500 7.0 130 10 - - 2N6515 2N6515 NPN HIGH VOLTAGE EBC 250 250 6.0 50 150 45 220 10 50 1.0 50 6.0 40 - - - - 2N6516 2N6516 NPN HIGH VOLTAGE EBC 300 300 6.0 ..  Tags: 2N3906 EBC PNP 2N2923* MPS751 equivalent 2N3906 CBE 2N5550 EBC TA7368P*  PNP 2N3906  PN5910  PN5142*  PN3694  MPSD54  MPS8099*  MPS751  MPS750  MPS6563  MPS5308   datasheet abstract..	50.85 Kb	6 Pages	Original
	First line: BF244 BD345 CP588V 2N5133 equivalent BF244 datasheet Industry Part Number Central Process Page Industry Part Number Central Process Page 1N456 .CPD64 1N456A.CPD64 1N457 .CPD64 1N457A.CPD64 1N458 .CPD64 1N458A.CPD64 1N459A.CPD64 1N461A.CPD83V 1N462A.CPD83V 1N482 .CPD64 1N483B.CPD64 1N484B.CPD64 1N485 Abstract: .. 2N6427 ..CP307 CP307 ..88 2N6428 2N6428 ..CP188 CP188 ..40 2N6429 2N6429 ..CP188 CP188 ..  Tags: BF244 datasheet 2N5133 equivalent CP588V BD345 BF244 to 106 bc239  to 106 2n5133  TIP135  TA7368P*  SE9302  SE7055*  PN5910  PN4858  PN4391  PN3694  PN3692*   1N456 1N456A 1N457 1N457A 1N458 1N458A 1N459A 1N461A 1N462A 1N482 1N483B 1N484B 1N485B 1N486B 1N625 1N626 1N627 1N628 1N629 1N643 1N645 1N649 1N658 1N659 1N660 1N661 1N662 1N663 1N702A 1N703A 1N704A 1N705A 1N706A 1N746A 1N747A 1N748A 1N749A 1N750A 1N751A	49.99 Kb	18 Pages	Original
	First line: J13003* J127 mosfet sd965 transistor J13003 SD965 Mini size Discrete semiconductor elements Diode Rectifier Schottky SOD-723 SOD-523 SOD-323 TO-252 TO263 SOT-23-6 TSSOP-8 SOP-8 mini-MELF MELF Switching SOT-523 SOT-323 SOT-23 Bridge (Single phase Three phase) capacitance Varactor SOT-323 SOT-23 TO-25 Abstract: .. 2N6427 NPN 40 40 500 625 10K 100K 100K 10 5 1.2 50 0.5 EBC 2N6517 2N6517 NPN 350 350 500 625 30 200 30 10 0.3 10 1 40 EBC 2N6520 2N6520 PNP -350 -350 -500 625 30 200 -30 -10 -0.3 -10 -1 40 EBC 2N6718L 2N6718L NPN 100 100 1000 850 50 300 ..  Tags: SD965 J13003 sd965 transistor J127 mosfet J13003* TVS AE SMA  triac 600 bce  transistor j122  TRANSISTOR BC327  TO outline for 2N5088  TL195  TL194  tip41c tip42c  TIP* To-220 NPN EBC  Thyristor 6kV  sod-523 varactor diodes   TO263	494.29 Kb	15 Pages	Original
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	2N6427	N/A	Silicon NPN + Darlington	Specification
	2N6427	N/A	Darlington, Medium Power	Specification

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