2N6387 2N6388 2N6387/2N6388 P011C

2N6388 SILICO NPN POWER DARLINGTON TRANSISTORS s s s s 2N6388 IS SGS-THOMSON PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT

2N6387 2N6387 2N6388 2N6388 SILICO NPN POWER DARLINGTON TRANSISTORS s s s s 2N6388 2N6388 IS SGS-THOMSON PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The 2N6387 2N6387 and 2N6388 2N6388 are silicon epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are inteded for use in low and medium frequency power applications. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 K R2 Typ. = 160 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N6387 2N6387 2N6388 2N6388 V CBO Collector-Base Voltage (I B = 0) 60 80 V V V CEV Collector-Emitter Voltage (V BE = -1.5V) 60 80 V CER Collector-Emitter Voltage (R BE 100) 60 80 V V CEO Collector-Emitter Voltage (I B = 0) 60 80 V V EBO Emitter-Base Voltage (I C = 0) IC I CM IB 5 V Collector Current 10 A Collector Peak Current 15 A Base Current P tot Total Dissipation at T c 25 o C T stg Storage Temperature Tj June 1997 Max. Operating Junction Temperature 0.25 A 65 W -65 to 150 o C 150 o C 1/4 2N6387/2N6388 2N6387/2N6388 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 1.92 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV Parameter Test Conditions V CE = rated V CEO V CE = rated V CEO I CEO Collector Cut-off Current (I B = 0) for 2N6387 2N6387 for 2N6388 2N6388 I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V V CEO(sus) Collector-Emitter Sustaining Voltage I C = 200 mA for 2N6387 2N6387 for 2N6388 2N6388 V CER(sus) Collector-Emitter Sustaining Voltage I C = 200 mA for 2N6387 2N6387 for 2N6388 2N6388 I C = 200 mA for 2N6387 2N6387 for 2N6388 2N6388 IC = 5 A I C = 10 A I B = 10 mA I B = 100 mA V BE Base-Emitter Voltage IC = 5 A I C = 10 A V CE = 3 V V CE = 3 V h FE DC Current Gain IC = 5 A I C = 10 A V CE = 3 V V CE = 3 V hfe Small Signal Current Gain IC = 1 A IC = 1 A VF Parallel-diode Forward Voltage I F = 10 A C CBO Collector Base Capacitance IE = 0 I s/b Second Breakdown Collector Current V CE = 25 V E s/b Second Breakdown Energy L = 12 mH V BE = -1.5 V mA V BE = -1.5V Collector-Emitter Saturation Voltage mA mA R BE = 100 V CEV(sus) Collector-Emitter Sustaining Voltage mA mA 1 1 V CE = 60 V V CE = 80 V Unit 0.3 3 o T c = 125 C Typ. Max. 5 Collector Cut-off Current (V BE = -1.5V) Min. V CE(sat) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Pulsed: 1s non repetitive pulse. 2/4 60 80 60 80 V V 60 80 V CE = 10 V V CE = 10 V V V V V 2 3 2.8 4.5 1000 100 f = 1MHz f = 1KHz V V V V 20000 20 1000 4 V CB = 10 V 200 f = 1MHz V pF 2.6 R BE = 100 I C = 4.5 A A 120 mJ 2N6387/2N6388 2N6387/2N6388 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 0.409 16.4 L4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L7 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C P011C 3/4 2N6387/2N6388 2N6387/2N6388 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4