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JANTXV2N6353 Microsemi Corporation Power Bipolar Transistor, 5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 3 Pin, TO-24, 3 PIN visit Digikey Buy
JAN2N6353 Microsemi Corporation Power Bipolar Transistor, 5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 3 Pin, TO-24, 3 PIN visit Digikey Buy
JANTX2N6353 Microsemi Corporation Power Bipolar Transistor, 5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 3 Pin, TO-24, 3 PIN visit Digikey Buy

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Part : JANTX2N6353 Supplier : Microsemi Manufacturer : Future Electronics Stock : - Best Price : $220.00 Price Each : $250.80
Part : JANTXV2N6353 Supplier : Microsemi Manufacturer : Future Electronics Stock : 4 Best Price : $350.00 Price Each : $350.00
Part : JAN2N6353 Supplier : Texas Instruments Manufacturer : Bristol Electronics Stock : 1 Best Price : - Price Each : -
Part : JANTX2N6353 Supplier : NES Manufacturer : Bristol Electronics Stock : 2 Best Price : $48.00 Price Each : $48.00
Part : JANTX2N6353 Supplier : Texas Instruments Manufacturer : Bristol Electronics Stock : 1 Best Price : - Price Each : -
Part : 2N6353 Supplier : Microsemi Manufacturer : NexGen Digital Stock : 1 Best Price : - Price Each : -
Part : JANTX2N6353MSC Supplier : Microsemi Manufacturer : NexGen Digital Stock : 156 Best Price : - Price Each : -
Part : JANTXV2N6353 Supplier : Microsemi Manufacturer : NexGen Digital Stock : 371 Best Price : - Price Each : -
Part : JANTXV2N6353MSC Supplier : Microsemi Manufacturer : NexGen Digital Stock : 46 Best Price : - Price Each : -
Part : JAN2N6353 Supplier : Microsemi Manufacturer : Chip1Stop Stock : 18 Best Price : $397.5400 Price Each : $397.5400
Part : JANTXV2N6353 Supplier : Microsemi Manufacturer : New Advantage Stock : 3 Best Price : $343.8000 Price Each : $343.8000
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2N6353 Datasheet

Part Manufacturer Description PDF Type
2N6353 Microsemi NPN Darlington Power Silicon Transistor Original
2N6353 API Electronics Short form transistor data Scan
2N6353 API Electronics Short form transistor data Scan
2N6353 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N6353 N/A Transistor Shortform Datasheet & Cross References Scan
2N6353 N/A Basic Transistor and Cross Reference Specification Scan
2N6353 N/A Shortform Transistor PDF Datasheet Scan
2N6353 N/A Shortform Transistor PDF Datasheet Scan
2N6353 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N6353 New England Semiconductor BIPOLAR DARLINGTON Scan
2N6353 PPC Products Transistor Short Form Data Scan
2N6353 PPC Products Transistor Selection Guide Scan
2N6353 PPC Products Transistor Selection Guide including JAN / JANTX / JANTXV Scan
2N6353 Semiconductor Technology NPN & PNP Silicon Darlington Transistors Scan
2N6353 Silicon Transistor JAN Qualified Power Transistors Scan
2N6353 Silicon Transistor Low Frequency Silicon Power Transistor Scan
2N6353JAN New England Semiconductor TRANS DARLINGTON NPN 150V 10A 2TO-33 Original
2N6353JAN Unitrode International Semiconductor Data Book 1981 Scan
2N6353JANTX New England Semiconductor NPN DARLINGTON POWER SILICON TRANSISTOR Original
2N6353JANTX Unitrode International Semiconductor Data Book 1981 Scan
Showing first 20 results.

2N6353

Catalog Datasheet MFG & Type PDF Document Tags

2N6350

Abstract: 2N6351 JAN & JANTX 2N6353 FEATURES â'¢ High Current Gain: up to 2000 min. @ lc = 5A â'¢ Low Saturation , TO-66 JAN & JANTX JAN & JANTX 2N6352 2N6353 . 80V. 150V Collectorâ'"Emitter , TO CASE TO-33 c "II*" JAN & JANTX 2N6352 JAN & JANTX 2N6353 COLLECTOR CONNECTED TO CASE 145 MAX , JANTX 2N 6350 JAN & JANTX 2N6351 JAN & JANTX 2N6352 JAN & JANTX 2N6353 MIL-STD-750 Test Symbol , °C Collector-Emitter Breakdown Voltage 2N6350, 2N6352 2N6351, 2N6353 BVceo 80 150 Vdc Vdc 3011 lc = 25mA, Reei = 2.2K
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OCR Scan
JANTX 2N6351 2N635 JANTX 2n JANTX 2N6352 r6e2 Cto25 MIL-S-19500/472

2N6350

Abstract: JANTXV JANTXV JANTXV JANTXV 2N6350 2N6351 2N6352 2N6353 FEATURES · H igh C u rre n t G ain: u p to , . JANTX I JANTXV I JANTXV 2N63S2 2N6353 C ollector- Em itter V o lta g e , SPECIFICATIONS JAN, JANTX & JANTXV 2N6352 JAN JANTX & JANTXV 2N6353 -ib- L - ·H M F -B A S E , M in . M ax. U n it s M e th o d JA N & JA N T X 2N6351 JA N & JA N T X 2N6353 T e s t C o n d , , 2N6352 2N6351, 2N6353 E m itter Base Breakdow n Voltage, B ase 1 E m itte r B ase Breakdown Voltage, B
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OCR Scan
2NS35I
Abstract: 2N6352 and 2N6353 NPN Darlington Power Silicon Transistor Available on commercial versions , '¢ JEDEC registered 2N6352 and 2N6353 â'¢ JAN, JANTX, and JANTXV qualifications are available per , 2N6353 2N6352 2N6353 Emitter-Base Voltage Total Power Dissipation o (1) @ TA = +25 C o (2 , : www.microsemi.com Page 1 of 7 2N6352 and 2N6353 MECHANICAL and PACKAGING â'¢ â'¢ â'¢ â'¢ â'¢ â , Page 2 of 7 2N6352 and 2N6353 ELECTRICAL CHARACTERISTICS @ T A = +25 oC unless otherwise noted Microsemi
Original
MIL-PRF-19500/472 T4-LDS-0315

2N6352

Abstract: 2N6350 TECHNICAL DATA 2N6350 JAN, JTX, JTXV 2N6351 JAN, JTX, JTXV 2N6352 JAN, JTX, JTXV 2N6353 JAN , RATINGS Ratings Symbol 2N6350 2N6352 2N6351 2N6353 Units VCER VCBO VEBO 80 80 , TJ, Tstg 2N6352 2N6353 1.0(2) 5.0(3) 2.0(4) 25(5) 2N6350, 2N6351 TO-66 (TO , TA > 250C Derate linearly 250 mW/0C for TC > 1000C 2N6350 2N6351 2N6352 2N6353 20 4.0 Unit 0 C/W 2N6352, 2N6353 TO-33 ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted
New England Semiconductor
Original
JAN 2N6351
Abstract: IUNIT 2N6350 2N6351 2N6352 2N6353 /FEATURES DESCRIPTION â'¢ â'¢ â'¢ â'¢ Unitrode , & JANTXV 2N6352 JAN, JANTX & JANTXV 2N6353 c - 11* - T rl B- - u COLLECTOR CONNECTED TO CASE 8-37 3 PIN TO-66 JAN, JANTX JAN. JANTX I. JANTXV I, JANTXV 2N6352 2N6353 . , JANTX 2N6350 JAN & JANTX 2N6351 JAN & JANTX 2N6352 JAN & JANTX 2N6353 ELECTRICAL , 2N6350, 2N6352 2N6351, 2N6353 Emitter Base Breakdown Voltage, Base 1 Emitter Base Breakdown Voltage -
OCR Scan
2N8331
Abstract: 2N6352 and 2N6353 NPN Darlington Power Silicon Transistor Available on commercial versions , ://www.microsemi.com. TO-213AA (TO-66) Package FEATURES â'¢ JEDEC registered 2N6352 and 2N6353 â'¢ JAN , Collector-Emitter Voltage Collector-Base Voltage 2N6352 2N6353 2N6352 2N6353 Emitter-Base Voltage Total , Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 7 2N6352 and 2N6353 , -0315, Rev. 1 (9/12/13) ©2013 Microsemi Corporation Page 2 of 7 2N6352 and 2N6353 ELECTRICAL Microsemi
Original

2N6352

Abstract: 2N6353 2N6350 2N6351 2N6352 2N6353 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings , VCBO VEBO IB IC 2N6350 2N6352 80 80 2N6351 2N6353 150 150 Units Vdc Vdc Vdc Vdc Adc Adc Adc , Storage Junction Temperature Range PT T J, T stg 1.0(2) 5.0(3) 2N6352 2N6353 2.0(4) 25(5) W W 0 , /0C for T C > 1000C Symbol RJC 2N6350 2N6351 20 2N6352 2N6353 4.0 Unit 0 C/W 2N6352, 2N6353 TO-24 (TO-213AA) 5) ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted
Microsemi
Original
rb1-e

2N6350 equivalent

Abstract: 2N6351 to minimize ringing. FIGURE 5. Pulse response test circuit for 2N6351 and 2N6353. 17 MIL-PRF , -19500/472E FIGURE 7. Maximum safe operating area graph for types 2N6352 and 2N6353. 19 MIL-PRF , , SILICON, POWER, TYPES 2N6350, 2N6351, 2N6352, AND 2N6353, JAN, JANTX, JANTXV, JANHC, AND JANKC Inactive , 2N6353, and figure 3 for JANHC and JANKC (die). 1.3 Maximum ratings. Unless otherwise specified, TA = , (2) 5 (3) 12 2N6351 20 2.0 (4) 25 (5) 12 2N6352 4.0 2.0 (4) 25 (5) 12 2N6353 4.0 (1
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Original
2N6350 equivalent MIL-PRF-19500/472E MIL-PRF-19500/472D MIL-PRF-19500 JANHCA2N6350 JANKCA2N6350

2N6350

Abstract: 1000C Qualified Level 2N6350 2N6351 2N6352 JAN JANTX JANTXV 2N6353 MAXIMUM RATINGS Symbol 2N6350 2N6352 2N6351 2N6353 Units Collector-Emitter Voltage Collector-Base Voltage VCER , TJ, Tstg 2N6352 2N6353 1.0(2) 2.0(4) (3) 5.0 25(5) -65 to +200 2N6350, 2N6351 TO-33* W W 0 C THERMAL CHARACTERISTICS Characteristics Symbol 2N6350 2N6351 2N6352 2N6353 , C/W 2N6352, 2N6353 TO-24* (TO-213AA) *See Appendix A for package outline ELECTRICAL
Microsemi
Original

2N6353

Abstract: RB1-E TELED YN E COMPONENTS SÖE D ö*il7bC15 üDQtiS42 t. T -3 3 -a 7 2N6350 thru 2N6353 NPN POWER DARLINGTON 5AMP SWITCHING TRANSISTORS · KD5A · LowVCE(Sat) · High Gain · Monolithic Construction , Operating & Storage Temp, Range Maximum Operating Conditions SYMBOL 2N6350 2N6351 2N6352 2N6353 UNIT 80 150 , See Safe Operating Area Diagrams 2N6353 2N6351/2N6353 MIN. MAX ELECTRICAL CHARACTERISTICS AT 25 , -2N6352 or 2N6353 + 30V + 30V
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OCR Scan
2N6351/2N6353 2N6350/2N6352 10MHZ JBI10

2N6350

Abstract: CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779 NPN POWER DARLINGTON 5 AMP SWITCHING TRANSISTORS · · · · IC5A Low VCE(Sat) High Gain Monolithic Construction 2N6350 thru 2N6353 , Factor O perating & Storage Temp. Range Maximum O perating Conditions SYMBOL 2N6350 2N6351 2N6352 2N6353 , See Safe Operating Area Diagrams 2N6353 ELECTRICAL CHARACTERISTICS AT 25°C CASE TEMPERATURE , < I 3 V C E , COUECTOR-EMfTTER VOLTAGE (VOLTS) Safe Operating Area-2N6352 or 2N6353 + 30V
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OCR Scan

POWER TRANSISTORS 10A 400v pnp

Abstract: NPN Transistor 10A 400V to3 X /472A 12-D 2N6351 YES YES X /472A 12-D 2N6352 YES YES X /472A 12-D 2N6353 YES YES X /472A 12 , 80V 2 N6350 2N6352 2N6301 2N6385 2N6283 2N6299 100V 2N6284 150V 2N6351 2N6353 hFEMIN. @lc 2000 @1 .OA (2N6350 & 2N6353) 1000 @ 1 .OA (2N6351 &2N6353) 750 @4.0A 1000 @5.0A 750 @10.0A 750
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OCR Scan
2N389 2N1479 2N1489 2N1716 POWER TRANSISTORS 10A 400v pnp NPN Transistor 10A 400V to3 pnp 400v 10a 2N1468 2NXXXX T-33- D0D07 19S00 2N424

2NXXXX

Abstract: NPN Transistor 10A 400V to3 6308 2N6338 2N6341 2N6350 2N6351 2N 6352 2N6353 2N 6383 2N6384 2N 6385 JAN YES YES YES YES YES YES , 2N6298 2N6299 F-24 2N6351 2N6353 < o o o o 1000 @5.0A 2V @5.0A 750 @10.0A 2V @10.0A hFEMIN. @lc VcEtSAT) © &.N) I T l 2000 @1,0A (2N6350 & 2N6353) 1000 @ 1,0A (2N6351 &2N6353
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OCR Scan
transistor 2n 523 transistor 2N 3440 2n3741 MIL c 3420 transistor TO-59 Package NPN Transistor 15A 400V to3 88DQ0787 2N1016B 2N1016C 2N1016D 2N1480 2N1481
Abstract: 2N6353+JAN Transistors NPN Darlington Transistor Military/High-RelY V(BR)CEO (V)150ã V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0u× @V(CBO) (V) (Test Condition)150 h(FE) Min. Current gain.1.0k h(FE) Max. Current gain.10k @I(C) (A) (Test Condition)5.0 @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq50M @I(C) (A) (Test Condition)1.0 @V(CE) (V) (Test Condition)10 V(CE)sat Max. (V)2.5 @I(C) (A) (Test American Microsemiconductor
Original

2N6522

Abstract: ir6062 2N6353 2N5390 2N6350 2N6351 2N6352 2N6353 15 5.0 5.0 25 25 80 80 150 80 150 80 80* 150* 80* 150* 60
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OCR Scan
2N997 2N998 2N999 2N2723 2N2785 2N6522 ir6062 IR5064 IR6060 IR6002 MM6427 0DD23S
Abstract: 2N6353+JANTXV Transistors NPN Darlington Transistor Military/High-RelY V(BR)CEO (V)150ã V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0u× @V(CBO) (V) (Test Condition)150 h(FE) Min. Current gain.1.0k h(FE) Max. Current gain.10k @I(C) (A) (Test Condition)5.0 @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq50M @I(C) (A) (Test Condition)1.0 @V(CE) (V) (Test Condition)10 V(CE)sat Max. (V)2.5 @I(C) (A American Microsemiconductor
Original
Abstract: 2N6353 Transistors NPN Darlington Transistor Military/High-RelN V(BR)CEO (V)150ã V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0u× @V(CBO) (V) (Test Condition)150 h(FE) Min. Current gain.1.0k h(FE) Max. Current gain.10k @I(C) (A) (Test Condition)5.0 @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq50M @I(C) (A) (Test Condition)1.0 @V(CE) (V) (Test Condition)10 V(CE)sat Max. (V)2.5 @I(C) (A) (Test American Microsemiconductor
Original
Abstract: 2N6353+JANTX Transistors NPN Darlington Transistor Military/High-RelY V(BR)CEO (V)150ã V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0u× @V(CBO) (V) (Test Condition)150 h(FE) Min. Current gain.1.0k h(FE) Max. Current gain.10k @I(C) (A) (Test Condition)5.0 @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq50M @I(C) (A) (Test Condition)1.0 @V(CE) (V) (Test Condition)10 V(CE)sat Max. (V)2.5 @I(C) (A American Microsemiconductor
Original

2N6352

Abstract: c* "1 i 2N6352 2N6353 ` 60 80 40 60 80 80 150 8.0 8.0 10.0 10.0 10.0 5.0 5.0 750/18000@6/3
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OCR Scan
2N6648 2N6649 2N6650 2N6300 2N6383
Abstract: 2N6301* / 2N6350* 2N6353* TO-33 80 10.0 1000 5.0/3.0 2.0 5.0/0.1 \|^ ^ S -
OCR Scan
2N6296 2N6297

TO61 package

Abstract: TO111 package 16 UULmJ ELECTRONICS, INC. COLLECTOR CURRENT = 10 AMPS NPN TYPESâ'"Continued Device No Case VCBO Volts VcEO (sus) Volts VEBO Volts 0JC °c/w Ft MHz, h FE VCE IC Min Max Vce (sat) Vbe (sat) @ IC @ IB 2N6262 TO-3 170 150 7 20 70 2 3 1.5 2.2 1.5 .15 1.2 20 2N6350 TO-33 80 80 12 2K 10K 5 5 1.5 2.5 5 .005 20 30 2N6351 TO-33 150 150 12 IK 10K 5 5 1.5 2.5 5 .005 20 30 2N6352 TO- 80 80 12 2K 10K 5 5 1.5 2.5 5 .005 4 30 66/3 2N6353 TO- 150 150 12 IK 10K 5 5
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OCR Scan
2N6354 2N6495 2N5007 2N5153 2N5627 2N6226 TO61 package TO111 package 2N5009 2N5151

1N6762

Abstract: JANKC2N2907A 2N4236 2N5660 2N5661 2N5684 2N5685 2N6277 2N6283 2N6353 2N6383 2N7371 2N1485
New England Semiconductor
Original
JANKC2N2907A 1N6762 NES 2n4405 2n3031 2N720A 2N1131 2N1132 2N1893 JANHC2N2222A JANKC2N2222A
Showing first 20 results.