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Part : 2N6293 Supplier : Harris Semiconductor Manufacturer : Rochester Electronics Stock : 155 Best Price : $0.74 Price Each : $0.74
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2N6293 Datasheet

Part Manufacturer Description PDF Type
2N6293 Boca Semiconductor EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Scan
2N6293 General Electric Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. Scan
2N6293 General Electric TRANSISTOR LEISTUNGS BIPOLAR Scan
2N6293 Micro Electronics Semiconductor Device Data Book Scan
2N6293 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2N6293 N/A Transistor Shortform Datasheet & Cross References Scan
2N6293 N/A Basic Transistor and Cross Reference Specification Scan
2N6293 N/A Basic Transistor and Cross Reference Specification Scan
2N6293 N/A Shortform Transistor PDF Datasheet Scan
2N6293 N/A Cross Reference Datasheet Scan
2N6293 N/A Transistor Replacements Scan
2N6293 N/A Transistor Replacements Scan
2N6293 N/A Semiconductor Master Cross Reference Guide Scan
2N6293 N/A Shortform Transistor Datasheet Guide Scan
2N6293 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N6293 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N6293 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2N6293 RCA Solid State Power Transistor Directory 1976 Scan

2N6293

Catalog Datasheet MFG & Type PDF Document Tags

2N6291

Abstract: 2N6293 Product Specification www.jmnic.com 2N6291 2N6293 Silicon NPN Power Transistors , PARAMETER CONDITIONS 2N6291 VCBO Collector-base voltage 50 Open base 2N6293 VEBO Emitter-base voltage V 80 2N6291 Collector-emitter voltage UNIT 60 Open emitter 2N6293 VCEO , www.jmnic.com 2N6291 2N6293 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise , Collector-emitter saturation voltage CONDITIONS 2N6291 2N6291 V IC=2.5A;IB=0.25A 2N6293 IC=2A;IB
JMnic
Original

2N6291

Abstract: 2N6293 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6291 2N6293 , emitter 2N6293 VCEO TOR UC V 80 50 Open base 2N6293 V 70 Open collector 5 , Transistors 2N6291 2N6293 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS , saturation voltage CONDITIONS 2N6291 TYP. MAX UNIT 50 IC=0.1A ;IB=0 V 70 2N6293 2N6291 IC=2.5A;IB=0.25A 2N6293 IC=2A;IB=0.2A 1.0 3.5 Collector cut-off current IC
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5A DRIVER ICS

2N6291

Abstract: 2N6293 SavantIC Semiconductor Product Specification 2N6291 2N6293 Silicon NPN Power Transistors , PARAMETER CONDITIONS 2N6291 VCBO Collector-base voltage 50 Open base 2N6293 VEBO Emitter-base voltage V 80 2N6291 Collector-emitter voltage UNIT 60 Open emitter 2N6293 VCEO , Specification 2N6291 2N6293 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise , =0.25A 2N6293 IC=2A;IB=0.2A 1.0 V 3.5 V 1.5 V 3.0 V 1.0 mA VCE=56V; VBE
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rca 17417

Abstract: TA8445 characteristics for 2N6288 - 2N6293. 422â'" 0961 Ãl DE |3ö7S0ai 001741'i fl 3875081 G E SOLID STATE 01E , for 2N6288 â'¢ 2N6293. Fig. 18 - Typical transfer characteristics for 2N6473 and 2N6474 , VOLTA« (Vccl- Fig. 21 - Typical putput characteristics for 2N6288 - 2N6293. Fig. 22 - Typical output , . 25 - Typical gain-bandwidth product for 2N6288 - 2N6293. i i ' 1 6 * I . I 4 C < a i â'¢ «9 - , . The 2N6289, 2N6291, and 2N6293 n-p-n types and 2N6106, 2N6108, and 2N6110 p-n-p devices fit into TO
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OCR Scan
2N6106-2N6111 2N6473-2N6476 2N6476 TA8232 TA8723 TA8210 rca 17417 TA8445 TA8722 2N6109 equivalent 2N6288-2N6293 RCA-2N6106-2N6111 2N6475

TA7741

Abstract: 2N6106-2N6111 -I9*M*I Fig. 6 - Typical dc beta characteristics fo r 2N6288 - 2N6293. 2-84 I HAS , characteristics for 2N6288 - 2N6293. 2-88 SECTOR 5bE D â  Fig. 17 â'¢ Typical transfer characteristics for 2N6288 â'" 2N6293. 43D2271 1 « * SEMICON]) 1 4 HARRIS X u or 5 , , and 2N6293 n-p-n types and 2N6106, 2N6108, and 2N6110 p-n-p devices fit into TO-213AA sockets. The , , respectively. MAXIMUM RATINGS, Absolute-Maximum Values: 2N6288 2N6289 2N6290 2N6291 2NS2A2 2N6293
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OCR Scan
TA7741 43D2571 4DS03 2N64732N6476 2N61062N6111 TA7784 TA8323

2N8107

Abstract: rca 17417 beta characteristics for 2N6288 - 2N6293. 422. 0961 F-04 Dl ~DE |3fl7SDäl 001741'ì fi 3875081 G , . 17 - Typical transfer characteristics for 2N6288 â'¢ 2N6293. Flg. 18 - Typical transfer , characteristics for 2N6288 - 2N6293. Fig. 22 - Typical output characteristics for 2N6473 and 2N6474. 426 . 0959 , 2N6293. i t 5 ' I 6 * 1 L, 9 s Ï . o A c < a z 4 3 «9 - - V , , and 2N6293 n-p-n types and 2N6106, 2N6108, and 2N6110 p-n-p devices fit into TO-213AA sockets. The
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OCR Scan
TA8211 TA7742 TA7743 2N8107 2N6476 rca 2N6474 equivalent transistors DG17417 2N6111 RCA 2N8288 DD1741S 2N647S T0-220AB TA7783 TA7782 TA8231

TA8210

Abstract: TA8232 high-fidelity amplifiers. T he 2N6289, 2N6291, and 2N6293 n-p-n types and 2N6106, 2N6108, and 2N6110 p-n-p , , Absolute-Maximum Values: N-P-N 2N6288 2N628» 2NS290 2N6291 2N62Ã2 2N6293 2N6473 2N6474 P-N-P 2N611Q* 2N6108 , . CHARACTERISTIC VOLTAGE Vdc CURRENT A dc 2N6292 2N6293 2N6106+ 2N6107* 2N6290 2N6291 2N6108+ 2N6109+ 2N6288
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OCR Scan
TA8444 TA8232 h 2N6108 RCA TA8212

RCA1C10

Abstract: RCA29 2N6293 BD239B BD241B BD243B 40871 BD239C BD241C BD243C AUDIO TYPES RCA1C10 RCA1C05 BD501 BD501A BD501B , 0.375 0.2 0.125 0.375 0.15 0.125 0.375 0.15 · " T O - 2 2 0 A A Package: 2N6289 2N6291 2N6293
RCA
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RCA31A RCA29 RCA TIP30 RCA-31 TIP29 TIP31 BD239 BD241 BD243 BD239A

300W TRANSISTOR AUDIO AMPLIFIER

Abstract: 40360 (SUSI = 400 V her - 40-160 @ 20 mA fT = 15 MHz min. 2N6292 2N6293" VCERISUSI -80 V hpE - 3^150 @2A 1j = , min. 2N6292 2N6293 VcerIsusi -8ov hFE - 30-150 @2A f j - 4 MHz min. 2N6106 2N6107 VCERISUSI -80 V hFE , Epitaxial-Base, T0-220AB 70 80 80 ± 30-150 2 4 0.1 2t 75 1 2 0.2 1.5 2 2N6293 Epitaxial-Base, TO-22QAA 70 80 80
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OCR Scan
2N5781 2N6372 2N5954 2N6472 2N6248 2N6488 300W TRANSISTOR AUDIO AMPLIFIER 40360 transistor 2N5321 40877 2N5840 150X150 IT039I ITO-31

BD243

Abstract: 2N5781 (SUSI = 400 V her - 40-160 @ 20 mA fT = 15 MHz min. 2N6292 2N6293" VCERISUSI -80 V hpE - 3^150 @2A 1j = , min. 2N6292 2N6293 VcerIsusi -8ov hFE - 30-150 @2A f j - 4 MHz min. 2N6106 2N6107 VCERISUSI -80 V hFE , 2N6292 Epitaxial-Base, T0-220AB 70 80 80 ± 30-150 2 4 0.1 2t 75 1 2 0.2 1.5 2 2N6293 Epitaxial-Base, TO
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OCR Scan
2N6491 2t751 2N5783 2N6374 2N59S6 SUSI-40 2N6111

2N6108

Abstract: 2N5781 (SUSI = 400 V her - 40-160 @ 20 mA fT = 15 MHz min. 2N6292 2N6293" VCERISUSI -80 V hpE - 3^150 @2A 1j = , min. 2N6292 2N6293 VcerIsusi -8ov hFE - 30-150 @2A f j - 4 MHz min. 2N6106 2N6107 VCERISUSI -80 V hFE
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OCR Scan
2N6470 2N6469 2N6486 2N6489 2N5782 2N6373

BD243

Abstract: 2N6374 min. 2N6292 2N6293 VcerIsusi -8ov hFE - 30-150 @2A f j - 4 MHz min. 2N6106 2N6107 VCERISUSI -80 V hFE , 2N6292 Epitaxial-Base, T0-220AB 70 80 80 ± 30-150 2 4 0.1 2t 75 1 2 0.2 1.5 2 2N6293 Epitaxial-Base, TO
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OCR Scan
2N5955 BD243A T0220
Abstract: » T pd 2N6292 2N6293 2N6294 2N6295 2N6297 2N6298 2N6299 2N6300 2N6301 2N6302 2N6303 2N6306 -
OCR Scan
000DD27 2N6307 2N6308 2N6312 2N6313 2N6314

2t751

Abstract: TO-220-AA Epitaxial-Base, T0-220AB 70 80 80 ± 30-150 2 4 0.1 2t 75 1 2 0.2 1.5 2 2N6293 Epitaxial-Base, TO-22QAA 70 80 80
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OCR Scan
TO-220-AA 2T75 to220aa SILICON GENERAL to 220 T0-220AA BD241A

2n6125

Abstract: 2.5 4 4 4 2N6133 2N6134 2N6111 2N6106 2N6109 2N6291 2N6292 2N6293 2N6473 2N6474 N
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OCR Scan
2n6125 MH8100 MH8106 MH8108 MH8700 MH0810 MH0816

TA8662

Abstract: 2N5954 min. 2N6292 2N6293 VcerIsusi -8ov hFE - 30-150 @2A f j - 4 MHz min. 2N6106 2N6107 VCERISUSI -80 V hFE
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OCR Scan
TA8662 2N6246 2N6487 2N6490 2NS954 FE-30-150 2N6247

2t751

Abstract: 40872 transistor 80 80 ± 30-150 2 4 0.1 2t 75 1 2 0.2 1.5 2 2N6293 Epitaxial-Base, TO-22QAA 70 80 80 * 30-150 2 4
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OCR Scan
2N5495 2N6269 2N4036 2N6386 TA8201 2N2102 40872 transistor 40871 transistor 40636 40872 2n6320 40594 Transistor

2SB512P

Abstract: tip318 -220 40 7 70 30 150 2 4 1 2 4 2N6107 2N6293 N TO-220 40 7 70 30 150 2 4 1 2 4 2N6110 2N6473 N TO-220 40
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OCR Scan
MH0870 MH0818 MH8500 2SD331 2SB512P tip318 TIP31N TIP308 2sb435 H8108 TIP30 TIP29A

2sc1061

Abstract: 2N6108 Power Transistors TYPE POLA CASE NO. RITY D45C12 MH0810 MH0816 MH0818 MH0870 MH8100 MH8106 MH8108 MH8500 MH8700 TIP29 TIP29A T1P29B TIP30 TIP30A TIP30B TIP31 TIP31A TIP31B TIP31C TIP32 TIP32A TIP32B T1P32C 2N6121 2N6122 2N6123 2N6124 2N6125 2N6126 2N6129 2N6130 2N6131 2N6288 2N6289 2N6290 2N6291 2N6292 2N6293 2N6473 2N6474 2SA473 2SA490 2SA670 2SA671 2SA816 2SB434 2SB435 2SB512 2SB512A P P P P P N N N N N N N N P P P N N N N P P P P N N N P P P N N N N N N N N N N N P P P P P P P P P TO-220 TO-220 TO
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OCR Scan
2SC1626 2sc1061 D44C12 TIP29B TIP32C 2N6132 2SC1173 2SC790

2n6a

Abstract: 2N6180 40-160 @ 20 mA fT = 15 MHz min. 2N6292 2N6293" VCERISUSI -80 V hpE - 3^150 @2A 1j = 4 MHz min. 2N6106
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OCR Scan
2N6178 2N6180 2N6177 2N5298 2N6478 2N6181 2n6a 130X130

TA8723

Abstract: 647s * 60 60 50 2N6292 2N6293 2N6106* 2N6107J 60 80 70 5 2N6473 2N6475Î 110 110 100 2N6474
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OCR Scan
647s TLE 6289 92CJ-IW7SAI 9ZCS-ZZ934 92C3-22540

2N6108

Abstract: 2N6180 min. 2N6292 2N6293 VcerIsusi -8ov hFE - 30-150 @2A f j - 4 MHz min. 2N6106 2N6107 VCERISUSI -80 V hFE , (SUSI = 400 V her - 40-160 @ 20 mA fT = 15 MHz min. 2N6292 2N6293" VCERISUSI -80 V hpE - 3^150 @2A 1j =
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OCR Scan
BD278 BD27SA 2N6078 2N6077 2N6079 220AB

2N6476 JAN

Abstract: 40817 min. 2N6292 2N6293 VcerIsusi -8ov hFE - 30-150 @2A f j - 4 MHz min. 2N6106 2N6107 VCERISUSI -80 V hFE , (SUSI = 400 V her - 40-160 @ 20 mA fT = 15 MHz min. 2N6292 2N6293" VCERISUSI -80 V hpE - 3^150 @2A 1j =
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OCR Scan
BD277 2N6476 JAN 40817 RCA 40250 transistor 2n3772 Transistor rca 40250 220AA

2N6108

Abstract: 2N6103 min. 2N6292 2N6293 VcerIsusi -8ov hFE - 30-150 @2A f j - 4 MHz min. 2N6106 2N6107 VCERISUSI -80 V hFE , (SUSI = 400 V her - 40-160 @ 20 mA fT = 15 MHz min. 2N6292 2N6293" VCERISUSI -80 V hpE - 3^150 @2A 1j =
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OCR Scan
2N6103 40594 Complementary Darlington Audio Power Amplifier
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