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2N6253 Datasheet

Part Manufacturer Description PDF Type
2N6253 Central Semiconductor Leaded Power Transistor General Purpose - Pol=NPN / Pkg=TO3 / Vceo=45 / Ic=15 / Hfe=20-150 / fT(Hz)=- / Pwr(W)=150 Original
2N6253 Comset Semiconductors HIGH POWER SILICON NPN TRANSISTOR Original
2N6253 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=45 / Ic=15 / Hfe=20-150 / fT(Hz)=- / Pwr(W)=150 Original
2N6253 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N6253 API Electronics 15 AMPS / 20 AMPS NPN Transistors Scan
2N6253 API Electronics Short form transistor data Scan
2N6253 API Electronics Short form transistor data Scan
2N6253 Continental Device India TO-3 Power Package Transistors Scan
2N6253 Continental Device India TO-3 Power Package Transistors (NPN) Scan
2N6253 Continental Device India Semiconductor Device Data Book 1996 Scan
2N6253 Continental Device India TO-3 Power Package Transistors (NPN) Scan
2N6253 General Electric High-power silicon N-P-N transistor. 55V, 115W. - Pol=NPN / Pkg=TO3 / Vceo=45 / Ic=15 / Hfe=20-150 / fT(Hz)=- / Pwr(W)=150 Scan
2N6253 Lucas Semiconductors Semiconductor Products Scan
2N6253 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2N6253 N/A Basic Transistor and Cross Reference Specification Scan
2N6253 N/A Transistor Shortform Datasheet & Cross References Scan
2N6253 N/A Shortform Transistor PDF Datasheet Scan
2N6253 N/A Transistor Replacements Scan
2N6253 N/A Transistor Replacements Scan
2N6253 N/A Transistor Replacements Scan
Showing first 20 results.

2N6253

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2N6253 - 2N6254 - 2N6371 HIGH POWER SILICON NPN TRANSISTORS The 2N6253, 2N6254, and 2N6371 are , Current IB Base Current Value 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 , V V 15 A 7 A 1/4 2N6253 - 2N6254 - 2N6371 Symbol Ratings < 25°C PTOT Power Dissipation > 25°C TJ Junction Temperature TS Storage Temperature Value 2N6253 Comset Semiconductors
Original
IC16 Packages 1
Abstract: IKWU rrcics (KI-IMM Fig. 1 - Thermal-cycling rating chart for 2N3055H, 2N6253. 2N6371. i 1 4 â'¢ â , all types a 4-H+- Fig 5 - Typical dc beta characteristics for 2N6253. COLLCCTO* CUWKfWT *IC>â'"A , Typical input characteristics for 2N6253. 0' io 20 SO «0 90 60 Fig. 15 - Typical output characteristics for 2N6253. 0 9 I 19 BASC'TO* EMITTER VOLTAGE IVee)-V »icj-it«3» Fig. 17-Typical input , UMT Sbi -0^5 POWER TRANSISTORS 2N3055H, 2N6253, 2N6254, 2N6371, 40251 Hometaxial-Base -
OCR Scan
RCA 40251 2N3055H RCA 40251 2N637 2N6371 RCA RCA 2N3055H RDF-10
Abstract: 2N6253 - 2N6254 - 2N6371 HIGH POWER SILICON NPN TRANSISTORS The 2N6253, 2N6254, and 2N6371 are , Current IB Base Current Value 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 , V V 15 A 7 A 1/4 2N6253 - 2N6254 - 2N6371 Symbol Ratings < 25°C PTOT Power Dissipation > 25°C TJ Junction Temperature TS Storage Temperature Value 2N6253 Comset Semiconductors
Original
e978
Abstract: 2N6253. Features: â'¢ 2N6254: premium type from 2N3055H family â  Maximum safe-area-of-operation , 2N6253. 100 collector-to-emitter voltage tv^hv 92CS-I9435RI BA5£ -TOâ'"t MTTTI n VOLTAOCIVjf)â'"V , BASE-TO-EMITTER VOLTAGE (Vgg )â'"v Fig. 14- Typical input characteristics for 2N6253. 0' 10 20 30 40 30 to COLLECTOR-TO-EMITTER VOLTAGE IVcE) â'" V 9ÌCS-I»««! Fig. 15 â'¢ Typical output characteristics for 2N6253. I ! , -6 RDF-2: 2N6253. 2N6254. 2N6371 < uiicu. rune uurauon s JOUduty tactor « 1 .Ã*». -
OCR Scan
rca 2n6254 2n6254 rca S 40251 um S b 1 -QqJo 2n3055 transistor 40251
Abstract: COLLECTOR-TO-EMITTER VOLTAOE CVCEtâ'" V *1II-)H4II4 Flg. 1 - Maximum operating areas for 2N6253. , transfer characteristics tor 2N6253. 442 Ãl DF|307S001 â¡â¡1?M3c1 3 3875081 G E SOLID STATE â'¢0 0.5 , Typical output characteristics lor 2N6253. 92CS-I9439 Fig. 15- Typical Input characteristics lor 2N6253. , Transistors _ 2N6253, 2N6254, 2N6371 File Number 1077 High-Power Silicon N-P-N 4For Industrial and ,   Power-switching circuits Transistors TERMINAL DESIGNATIONS 92CS-27S16 JEDEC T0-204AA The RCA-2N6253, 2N6254 -
OCR Scan
2N625 92CS-20C74 N6253 0D17434 RCA-2N6253 92CS-I9442 92M-U32 I2CI-I944J 2C5-I9440
Abstract: 2N6253. 2-201 Power Transistors. 3 *HAS 7 " '3 3 - / 3 2N6253, 2N6254, 2N6371 M302271 , h a ra c te ris tic s fo r 2N6253. HARRIS 09 ( 19 8 A S 6 -T 0 -E M IT T E R VOLTAGE ( V b e , P ow er Transistors File N um b er 1077 SECTOR 27E D H 2N6253, 2N6254, 2N6371 4302571 , plifiers P ow er-sw itching circuits TERMINAL DESIGNATIONS JEDEC TQ-204AA The RCA-2N6253, 2N6254 , axim um Values: 2N6253 V coo -
OCR Scan
i944 ITT 2201 2N62S3 92C5-I9442 92C3-I23 ZCS-19443 92CSH2306RI CSH2J07RJ
Abstract: Inchange Semiconductor Product Specification 2N6253 Silicon NPN Power Transistors DESCRIPTION With TO-3 package Low collector saturation voltage Wide safe operating area High dissipation capability APPLICATIONS Series and shunt regulators High fidelity amplifiers Power switching circuits , resistance junction to case Inchange Semiconductor Product Specification 2N6253 Silicon NPN , 3 Inchange Semiconductor Product Specification 2N6253 Silicon NPN Power Transistors -
Original
Abstract: Product Specification www.jmnic.com 2N6253 Silicon NPN Power Transistors DESCRIPTION With TO-3 package Low saturation voltage Wide safe operating area High dissipation capability APPLICATIONS Series and shunt regulators High fidelity amplifiers Power switching circuits PINNING PIN , www.jmnic.com 2N6253 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified , Specification www.jmnic.com 2N6253 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline JMnic
Original
Abstract: SavantIC Semiconductor Product Specification 2N6253 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Wide safe operating area ·High dissipation capability APPLICATIONS ·Series and shunt regulators ·High fidelity amplifiers ·Power , SavantIC Semiconductor Product Specification 2N6253 Silicon NPN Power Transistors CHARACTERISTICS , 2N6253 - -
Original
25V 3A NPN
Abstract: CDÎL 2N6253, 6254, 6371 2N6253, 2N6254, 2N6371 NPN POWER TRANSISTORS High-fidelity Amplifier and Power Switching Circuit Applications DIM A B C D E F G H J K L M MIN - - 6.35 0,96 - 29,90 10,69 5,20 16,64 11.15 - 3,84 MAX 39,37 22,22 8,50 1.09 1.77 30,4 11,18 5,72 17,15 , 2N6253, 2N6254, 2N6371 6253 6254 6371 max. max. max. max. max. max. max. max. max. 100 50 80 40 45 85 , 2N6253, 2N6254, 2N6371 6253 6254 6371 1c = 5 A; V ce = 2 V I c = 8 A; V ce = 4 V hf'E* hFE* min. max -
OCR Scan
Abstract: V V A A ma 2N3055 117 100 60 7 15 20 70 ~4~ 4 1.1 1.8 4 .4 5.0 2N6253 115 55 45 5 15 20 70 3 4 1.0 , TYPICAL INPUT CHARACTERISTICS FOR TYPE 2N6253 â'¢< I 3 z lu S S i 8 CASE TEMPERATURE , COLLECTOR- TO-EMITTER VOLTAGE , COLLECTOR-TO-EMITTER VOLTAGE - V MAXIMUM OPERATING AREAS FOR TYPES 2N3055 AND 2N6253 100 < I S s io I -
OCR Scan
2n3055 curve 2N30ss 2N3055 TO-3 2n3055 collector characteristic curve J 2N3055 power transistor 2n3055 AND2N6371 00435T5 TWX-510-224-6582 H151-
Abstract: CHARACTERISTICS FOR TYPE 2N6253 COLIECTOR-TO-EMITTER VOLTAGE (V«) - 4V TYPICAL OUTPUT CHARACTERISTICS FOR TYPE , VOLTAGE (Veti - V MAXIMUM OPERATING AREAS FOR TYPES 2N3055 AND 2N6253 1 COLIECTOR-TO-EMITTER VOLTAGE (V -
OCR Scan
2N 6254
Abstract: POWER TRANSISTORS V Sat Test I Voltages Conditions | Ic VCE Iebo V be V A V A ma FT [ MAXIMUM RATINGS-1 â  Â« 25â'C 1:iv r?n 1: « r a i i : V A V V Watts > _ « ä hFE @ MIN MAX le A VCE 2N3055 117 100 60 7 15 20 70 ~4~ 4 1.1 1.8 4 .4 Ul à TYPE NO. 2N6253 115 55 45 5 15 20 70 3 , ,) - V TYPIC AL INPUT CHARACTERISTICS FOR TYPE 2N6253 COLLECTOR-TO-EMITTER VOLTAGE (VCI) = 4V 0 -
OCR Scan
2N3035 2N4253 Q0435T5
Abstract: 2N6253 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)45 V(BR)CBO (V)55 I(C) Max. (A)15 Absolute Max. Power Diss. (W)115# Maximum Operating Temp (øC)200Ãu I(CBO) Max. (A)1.5m° @V(CBO) (V) (Test Condition)25 V(CE)sat Max. (V)4.0 @I(C) (A) (Test Condition)15 @I(B) (A) (Test Condition)5.0 h(FE) Min. Current gain.20 h(FE) Max. Current gain.150 @I(C) (A) (Test Condition)3.0 @V(CE) (V) (Test Condition)4.0 f(T) Min. (Hz) Transition Freq800k @I(C) (A) (Test Condition)1.0 @V(CE) (V American Microsemiconductor
Original
Abstract: 50 10 1.5 10 2.5 2N6253 15 115 55 45 20 70 3.0 4.0 15 Central Semiconductor
Original
2N6249 2N6251 2N6282 2N6306 2N6307 2N6308 2n6545 datasheet 2N6673 2N6248 2N6285 2N6286
Abstract: 10 1.5 10 2.5 2N6253 15 115 55 45 20 70 3.0 4.0 15 4.0 Central Semiconductor
Original
2n6472 2N6287 2N6383 2N6648 2N6384 2N6649 2N6470
Abstract: 2N6253 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. Bipolar NPN Device. VCEO = 45V 3 (case) 3.84 (0.151) 4.09 (0.161) IC = 15A 7.92 (0.312) 12.70 (0.50) All Semelab Semelab
Original
Abstract: 2N6253 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 45V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 15A All Semelab hermetically sealed products can Semelab
Original
Abstract: 2N6253 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 45V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 15A All Semelab hermetically sealed products can Semelab
Original
Abstract: Power Transistors TO-3 Case (Continued) e» â'"y\) a typi E no. â c Pd bvcbo bvceo hfe *TYP @ lC vce(sat) ®"c *TYP (a) (w) (v) (v) (a) (v) (a) (MHZ) NPN PNP MAX MIN MIN MIN MAX MAX MIN 2N6248 10 125 110 100 20 100 5.0 3.5 10 4.0 2N6249 10 175 300 200 10 50 10 1.5 10 2.5 2N6250 10 175 375 275 8.0 50 10 1.5 10 2.5 2N6251 10 175 450 350 6.0 50 10 1.5 10 2.5 2N6253 15 115 55 45 20 70 3.0 4.0 15 4.0 2N6254 15 150 100 80 20 70 5.0 4.0 15 . 2N6282 2N6285 20 160 60 60 750 -
OCR Scan
2N6385 2N6650 2N6469 2N6471 2N6542 2N6543
Abstract: A fy = 0.8 MHz min. 2N6253 VCER(susl-55V hFE â  20-70 ®3A f T = 0.8 MHz min. PT= 115 W 2 N6038 , 2N6253 115-W Hometaxial-Base, General Purpose 45 55 55 20-70 3 4 2 10 55 1 3 0.3 1.7 3 2N3055* 115 -
OCR Scan
ITO-220 2N1482 2N5786 2N3054 2N5298 2N344 40412 40327 BDY71 2N6478 ITO-391- ITO-2201 ITO-31
Abstract: POWER TRANSISTORS TYPE NO 2N3055 2N6253 2N6254 2N6371 PT MAXIMUM RATINGS @ k 25°C B V c b o B V c eo B V ebo A V V V Watts 117 115 150 117 100 55 100 50 60 45 80 40 7 5 5 15 15 15 16 hfe Ic C» VcE MIN MAX 20 20 20 15 70 70 70 60 A 4 3 5 8 V 4 4 2 4 Sat Test Voltages Conditions Vet V be Ic I b I ebo V A A V ma 1.1 1.0 .5 1.5 1.8 1.7 1.5 4.0 4 3 5 8 .4 .3 .5 .8 5.0 10.0 .5 10.0 C Q llE C T O R T O fM IT T E R VOLTAGE -
OCR Scan
2n3055 IC
Abstract: A fy = 0.8 MHz min. 2N6253 VCER(susl-55V hFE â  20-70 ®3A f T = 0.8 MHz min. PT= 115 W 2 N6038 , 'c >B 'c V V V A V 25 150 V A A A 2N6253 115-W Hometaxial-Base, General Purpose 45 55 55 -
OCR Scan
40363 40346 pt 35c 2N5496 2N6103 2N3442 2N3771 2N3773 2N5578
Showing first 20 results.