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Part : STF2N62K3 Supplier : STMicroelectronics Manufacturer : Wuhan P&S Stock : 1,400 Best Price : $0.32 Price Each : $0.40
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2N6248 Datasheet

Part Manufacturer Description PDF Type
2N6248 Central Semiconductor Leaded Power Transistor General Purpose - Pol=PNP / Pkg=TO3 / Vceo=110 / Ic=10 / Hfe=20-100 / fT(Hz)=10M / Pwr(W)=125 Original
2N6248 Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=110 / Ic=10 / Hfe=20-100 / fT(Hz)=10M / Pwr(W)=125 Original
2N6248 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N6248 API Electronics Short form transistor data Scan
2N6248 Diode Transistor Transistor Short Form Data Scan
2N6248 Diode Transistor Silicon Transistors / TO-63 Transistors Scan
2N6248 General Electric Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. - Pol=PNP / Pkg=TO3 / Vceo=110 / Ic=10 / Hfe=20-100 / fT(Hz)=10M / Pwr(W)=125 Scan
2N6248 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2N6248 N/A Basic Transistor and Cross Reference Specification Scan
2N6248 N/A Transistor Shortform Datasheet & Cross References Scan
2N6248 N/A Shortform Transistor PDF Datasheet Scan
2N6248 N/A Transistor Replacements Scan
2N6248 N/A Transistor Replacements Scan
2N6248 N/A Cross Reference Datasheet Scan
2N6248 N/A Transistor Replacements Scan
2N6248 N/A Transistor Replacements Scan
2N6248 N/A Transistor Replacements Scan
2N6248 N/A Transistor Replacements Scan
2N6248 N/A Transistor Replacements Scan
2N6248 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
Showing first 20 results.

2N6248

Catalog Datasheet MFG & Type PDF Document Tags

2N6246

Abstract: 2N6247 Inchange Semiconductor Product Specification 2N6246 2N6247 2N6248 Silicon PNP Power , Collector-emitter voltage 2N6248 SEM Open emitter 2N6246 2N6247 Emitter-base voltage UNIT -70 -90 V -110 -60 Open base 2N6248 VEBO TOR DUC VALUE -80 V -100 Open , 2N6247 2N6248 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL , =-2A 2N6246 IC=-7A ; VCE=-4V -2.0 2N6247 IC=-6A ; VCE=-4V -1.8 2N6248 IC=-5A ; VCE
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Original
PNP 100V 2A

TA8724

Abstract: transistor 2n6246 , 2N6247, and 2N6469. Fig. 6 - Typical dc beta characteristics for 2N6248. 2-102 HARRIS SEMICOND , - Typical input characteristics for 2N6248. Fig. 10 - Typical output characteristics for 2N6246 , output characteristics for 2N6248. Fig. 12- Typical gain-bandwidth product vs. collector current for , 2N6246, 2N6247, 2N6248, 2N6469 H A RR IS S E M I C O N D S E C T O R SbE D File N u m b e r , curves High gain at high current 92C S -27516 JEDEC TO-204AA T h e 2N6246,\ 2N6247, |2N6248, and
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OCR Scan
TA8724 transistor 2n6246 TA7281 TA7280 TA7279 N6469 P-6019

2N6247

Abstract: 2n6246 SavantIC Semiconductor Product Specification 2N6246 2N6247 2N6248 Silicon PNP Power , 2N6246 VCBO Collector-base voltage 2N6247 VALUE -70 Open emitter -90 2N6248 Collector-emitter voltage -60 2N6247 Open base 2N6248 VEBO V -110 2N6246 VCEO UNIT , Semiconductor Product Specification 2N6246 2N6247 2N6248 Silicon PNP Power Transistors CHARACTERISTICS , =-5A; IB=-0.5A 2N6246 Collector-emitter saturation voltage UNIT IC=-7A; IB=-0.7A 2N6248
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Original

2N6246

Abstract: 2N6247 Product Specification www.jmnic.com 2N6246 2N6247 2N6248 Silicon PNP Power Transistors , Collector-base voltage 2N6247 VALUE 70 Open emitter 90 2N6248 Collector-emitter voltage 60 2N6247 Open base 2N6248 VEBO V 110 2N6246 VCEO UNIT Emitter-base voltage 80 , www.jmnic.com 2N6246 2N6247 2N6248 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise , Collector-emitter saturation voltage UNIT IC=7A; IB=0.7A 2N6248 VCEsat-2 MAX 100 2N6246
JMnic
Original
2N6247/6248

TA8724

Abstract: RCA-2N6246 characteristics tor 2N6246, 2N6247, 2N624B, and 2N6469. Fig. 9 â'" Typical input characteristics for 2N6248. 9ICS-ZIS4eRI Fig. 11 â'" Typical output characteristics lor 2N6248. 436 0 1E 17432 D T^BB'ZS Fig. 8 , _General-Purpose Power Transistors 2N6246, 2N6247, 2N6248, 2N6469 TERMINAL DESIGNATIONS JEDEC TO-2Q4AA RCA-2N6246, 2N6247, 2N6248, and 2N6469 are epitaxial-base silicon p-n-p transistors featuring high gain at high , registration data format (JS-6 RDF-21. 2N6469 2N6246 2N6247 2N6248 VCBO -50 -70 -90 -110 V VCER -50 -70
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OCR Scan
clare mercury RC 4565 RCA 2N6246 i30b 2N6248 transistor clare mercury relay 307S0 0D174E7 I93BS 0017M33 92CS-24702BI

TA8724

Abstract: 2N6247 T y p ic a l d c beta c h a ra c te ris tic s fo r 2N6248. 2-102 2N6246, 2N6247, 2N6248 , p u t c h a ra c te ris tic s fo r 2N6248. Fig. 1 0 - T y p ic a l o u tp u t c h a ra c te ris , &I COLLECTOR-TO-EMITTER VOLTAGE (VCE) - V Fig. 11 - T y p ic a l o u tp u t c h a ra c te ris tic s fo r 2N6248. , 2N6246, 2N6247, 2N6248, 2N6469 File Number 677 Silicon P-N-P Epitaxial-Base, High-Power , safe-area-of-operation curves m High gain at high current JEDEC TO-204AA T h e 2N 6246, | 2N 6247, [2N6248, and 2N 6
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OCR Scan
92CS-2IMB 92CS-2 92CS-24702RI 92CS-I9586R3

2N6292

Abstract: 2N3055 -66) 675 â'¢ Or higher voltage type 2N6248. High-Voltage lc = N-P-N 0.2 A P-N-P 'c = N-P-N 2 A P-N-P , 2N6107 [P-N-P] mily Designation 2N6472 [N-P-N] 2N6248 [P-N-P] 2N6488 [N-P-N] 2N6491 [P-N-P] 2N5783 , »5 MHz typ. 676 2N6475 vCEB(«-i=nov h,.»30-150 -1.5A fj=5 MHz typ. 676 2N6248 VcerISUSI - -105 V hFE = , -31 526 2N6248 VCER(SUS) - -110\ lc - â'"14 A (TO-3) 677 2N3441 VCEB(SUSI - 150 V lc = 2 A ITO-661 529 , 2N3442 2N3879 2N5293A 2N5954* 2N3265 2N3773 2N5039 2N5672 2N6248* 41012 41013 2N5671 2N6032 150 to 450V
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OCR Scan
2N5781 2N6372 2N3055 ta8662 2N6178 IT039I ITO-31 2N6374 2N59S6

audio ampli 3w

Abstract: 2N3772 APPLICATIONS -66) 675 â'¢ Or higher voltage type 2N6248. High-Voltage lc = N-P-N 0.2 A P-N-P 'c = N-P-N 2 A P-N-P , 2N6107 [P-N-P] mily Designation 2N6472 [N-P-N] 2N6248 [P-N-P] 2N6488 [N-P-N] 2N6491 [P-N-P] 2N5783 , »5 MHz typ. 676 2N6475 vCEB(«-i=nov h,.»30-150 -1.5A fj=5 MHz typ. 676 2N6248 VcerISUSI - -105 V hFE = , -31 526 2N6248 VCER(SUS) - -110\ lc - â'"14 A (TO-3) 677 2N3441 VCEB(SUSI - 150 V lc = 2 A ITO-661 529 , 2N3442 2N3879 2N5293A 2N5954* 2N3265 2N3773 2N5039 2N5672 2N6248* 41012 41013 2N5671 2N6032 150 to 450V
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OCR Scan
2N5956 audio ampli 3w 2N3772 APPLICATIONS 2N3440 2N5416 REPLACEMENT 2N5415 REPLACEMENT 40852 2N6289 SUSI-40 2N6110 2N6111 2N6470 2N6486

2N6491 SWITCH

Abstract: 2N6489 SWITCH 2N6107 [P-N-P] mily Designation 2N6472 [N-P-N] 2N6248 [P-N-P] 2N6488 [N-P-N] 2N6491 [P-N-P] 2N5783 , »5 MHz typ. 676 2N6475 vCEB(«-i=nov h,.»30-150 -1.5A fj=5 MHz typ. 676 2N6248 VcerISUSI - -105 V hFE = , * -120 I - I-I - I 2N6248 FAMILY lp-n-p] (silicon) fj = 10 MHz min; PT = 125 W max avcex(sus) â'¢lCEV , -6 2N6248 Epitaxial-Base, General Purpose -100 -105 -110* 20-100 -5 -4 -0.2* -5t -100 -1.3 -5 -0.5
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OCR Scan
2N6491 SWITCH 2N6489 SWITCH 4-0992 2N6488 SWITCH 2n6476 2N6489 2N5782 2N6373 2N5955 2N6251 BUX17

2N5954

Abstract: 2N5956 -66) 675 â'¢ Or higher voltage type 2N6248. High-Voltage lc = N-P-N 0.2 A P-N-P 'c = N-P-N 2 A P-N-P , 2N6107 [P-N-P] mily Designation 2N6472 [N-P-N] 2N6248 [P-N-P] 2N6488 [N-P-N] 2N6491 [P-N-P] 2N5783 , »5 MHz typ. 676 2N6475 vCEB(«-i=nov h,.»30-150 -1.5A fj=5 MHz typ. 676 2N6248 VcerISUSI - -105 V hFE = , -31 526 2N6248 VCER(SUS) - -110\ lc - â'"14 A (TO-3) 677 2N3441 VCEB(SUSI - 150 V lc = 2 A ITO-661 529
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OCR Scan
2N5838 2N5839 2N5840

4-0992

Abstract: 2N6180 * -120 I - I-I - I 2N6248 FAMILY lp-n-p] (silicon) fj = 10 MHz min; PT = 125 W max avcex(sus) â'¢lCEV , -6 2N6248 Epitaxial-Base, General Purpose -100 -105 -110* 20-100 -5 -4 -0.2* -5t -100 -1.3 -5 -0.5
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OCR Scan
2N6181 2N6179 2N6180 BUX66 BUX66A BUX66C BDX18 2N6180PLASTIC

RCA TO-5

Abstract: 2N2016 -66) 675 â'¢ Or higher voltage type 2N6248. High-Voltage lc = N-P-N 0.2 A P-N-P 'c = N-P-N 2 A P-N-P , 2N6107 [P-N-P] mily Designation 2N6472 [N-P-N] 2N6248 [P-N-P] 2N6488 [N-P-N] 2N6491 [P-N-P] 2N5783 , »5 MHz typ. 676 2N6475 vCEB(«-i=nov h,.»30-150 -1.5A fj=5 MHz typ. 676 2N6248 VcerISUSI - -105 V hFE = , -31 526 2N6248 VCER(SUS) - -110\ lc - â'"14 A (TO-3) 677 2N3441 VCEB(SUSI - 150 V lc = 2 A ITO-661 529 , * -120 I - I-I - I 2N6248 FAMILY lp-n-p] (silicon) fj = 10 MHz min; PT = 125 W max avcex(sus) â'¢lCEV
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OCR Scan
RCA TO-5 2N2016 2n3772 2N6474 JAN TRANSISTOR 2n3055 JAN 2N5039 BUX17A BUX17B BUX17C 2N6249 2N62S1

2N3440 2N5416 REPLACEMENT

Abstract: 2N5416 REPLACEMENT -66) 675 â'¢ Or higher voltage type 2N6248. High-Voltage lc = N-P-N 0.2 A P-N-P 'c = N-P-N 2 A P-N-P , 2N6107 [P-N-P] mily Designation 2N6472 [N-P-N] 2N6248 [P-N-P] 2N6488 [N-P-N] 2N6491 [P-N-P] 2N5783 , »5 MHz typ. 676 2N6475 vCEB(«-i=nov h,.»30-150 -1.5A fj=5 MHz typ. 676 2N6248 VcerISUSI - -105 V hFE = , -31 526 2N6248 VCER(SUS) - -110\ lc - â'"14 A (TO-3) 677 2N3441 VCEB(SUSI - 150 V lc = 2 A ITO-661 529
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OCR Scan
2N5416 REPLACEMENT 2N5294 replacement 2N5296 RCA 2N6108 RCA 2N6490 RCA 2N6474

2N6214

Abstract: 2N5239 2N5298 2N5781 2N5784 2N3442 2N3879 2N5293A 2N5954* 2N3265 2N3773 2N5039 2N5672 2N6248* 41012 41013 2N5671 , * -120 I - I-I - I 2N6248 FAMILY lp-n-p] (silicon) fj = 10 MHz min; PT = 125 W max avcex(sus) â'¢lCEV , -6 2N6248 Epitaxial-Base, General Purpose -100 -105 -110* 20-100 -5 -4 -0.2* -5t -100 -1.3 -5 -0.5
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OCR Scan
BU106 2N5240 2N6510 2N6308 2N5805 2N5239

2N3055 TO-220

Abstract: 2n5783 -66) 675 â'¢ Or higher voltage type 2N6248. High-Voltage lc = N-P-N 0.2 A P-N-P 'c = N-P-N 2 A P-N-P , 2N6107 [P-N-P] mily Designation 2N6472 [N-P-N] 2N6248 [P-N-P] 2N6488 [N-P-N] 2N6491 [P-N-P] 2N5783 , »5 MHz typ. 676 2N6475 vCEB(«-i=nov h,.»30-150 -1.5A fj=5 MHz typ. 676 2N6248 VcerISUSI - -105 V hFE = , -31 526 2N6248 VCER(SUS) - -110\ lc - â'"14 A (TO-3) 677 2N3441 VCEB(SUSI - 150 V lc = 2 A ITO-661 529
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OCR Scan
2N3055 TO-220 5A pnp to 220 t-amp 2n3055 2N5786 2N5785 2N5578 2N5575
Abstract: search for devices beginning "2N6248" Semelab Home Datasheets are downloaded as Acrobat PDF files. Bipolar Products PRODUCT 2N6248 2N6248-JQR-B Polarity PNP PNP Package TO3 TO3 VCEO 110V 110V IC(cont) 10A Semelab
Original
2N5933 2N5934 2N5936 2N6249-JQR-B 2N6260

2n3055 complement

Abstract: 2N3055 -66) 675 â'¢ Or higher voltage type 2N6248. High-Voltage lc = N-P-N 0.2 A P-N-P 'c = N-P-N 2 A P-N-P , 2N6248 VCER(SUS) - -110\ lc - â'"14 A (TO-3) 677 2N3441 VCEB(SUSI - 150 V lc = 2 A ITO-661 529 (2N6468)t , 2N3442 2N3879 2N5293A 2N5954* 2N3265 2N3773 2N5039 2N5672 2N6248* 41012 41013 2N5671 2N6032 150 to 450V
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OCR Scan
2N5293 2N5294 2N6106 2N3054 2N5495 2n3055 complement ITO-2201

TA8662

Abstract: 2N5954 2N6107 [P-N-P] mily Designation 2N6472 [N-P-N] 2N6248 [P-N-P] 2N6488 [N-P-N] 2N6491 [P-N-P] 2N5783 , »5 MHz typ. 676 2N6475 vCEB(«-i=nov h,.»30-150 -1.5A fj=5 MHz typ. 676 2N6248 VcerISUSI - -105 V hFE =
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OCR Scan
2N6108 2N6487 2N6490 2NS954 2N6293 FE-30-150 2N6473

2N6180

Abstract: npn darlington 400v 15a voltage type 2N6248. High-Voltage lc = N-P-N 0.2 A P-N-P 'c = N-P-N 2 A P-N-P 2N3440 VCE0(SUS) - 250 V , - -85 V lc " -4 A (TO-66) 675 2N4348 VCEV(SUS) - 140 V lc = 14 A (TO-31 526 2N6248 VCER(SUS) - -110\ lc , 2N5298 2N5781 2N5784 2N3442 2N3879 2N5293A 2N5954* 2N3265 2N3773 2N5039 2N5672 2N6248* 41012 41013 2N5671 , * -120 I - I-I - I 2N6248 FAMILY lp-n-p] (silicon) fj = 10 MHz min; PT = 125 W max avcex(sus) â'¢lCEV , -6 2N6248 Epitaxial-Base, General Purpose -100 -105 -110* 20-100 -5 -4 -0.2* -5t -100 -1.3 -5 -0.5
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OCR Scan
2N2102 2N4036 2N5320 2N5322 npn darlington 400v 15a 2N3283 ITO-391 80-12SW

2N3055 TO-220

Abstract: 2N3055, TO5 -66) 675 â'¢ Or higher voltage type 2N6248. High-Voltage lc = N-P-N 0.2 A P-N-P 'c = N-P-N 2 A P-N-P , 2N6248 VCER(SUS) - -110\ lc - â'"14 A (TO-3) 677 2N3441 VCEB(SUSI - 150 V lc = 2 A ITO-661 529 (2N6468)t
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OCR Scan
BFT19B 2N3055, TO5 complementary-pair to31 2N3055 TO220 2N3055 TO-3 40250 2N5494 SUSI--40 2N5295 2N5296 2N5297

RCA 2N3054 transistor

Abstract: 2N3055 -31 526 2N6248 VCER(SUS) - -110\ lc - â'"14 A (TO-3) 677 2N3441 VCEB(SUSI - 150 V lc = 2 A ITO-661 529 , -66) 675 â'¢ Or higher voltage type 2N6248. High-Voltage lc = N-P-N 0.2 A P-N-P 'c = N-P-N 2 A P-N-P , * -120 I - I-I - I 2N6248 FAMILY lp-n-p] (silicon) fj = 10 MHz min; PT = 125 W max avcex(sus) â'¢lCEV , -6 2N6248 Epitaxial-Base, General Purpose -100 -105 -110* 20-100 -5 -4 -0.2* -5t -100 -1.3 -5 -0.5
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OCR Scan
2N6177 2N3439 2N5415 2N6079 2N6175 BUX67 RCA 2N3054 transistor rca 2n3055 RCA 40250 TQ-66 2N358S

2N6179

Abstract: POWER TRANSISTORS 10A 400v pnp 2N5298 2N5781 2N5784 2N3442 2N3879 2N5293A 2N5954* 2N3265 2N3773 2N5039 2N5672 2N6248* 41012 41013 2N5671 , * -120 I - I-I - I 2N6248 FAMILY lp-n-p] (silicon) fj = 10 MHz min; PT = 125 W max avcex(sus) â'¢lCEV , -6 2N6248 Epitaxial-Base, General Purpose -100 -105 -110* 20-100 -5 -4 -0.2* -5t -100 -1.3 -5 -0.5
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OCR Scan
BUX18 POWER TRANSISTORS 10A 400v pnp 2N3055 RCA transistor BDX 65 TRANSISTOR 450V 5A NPN 100W RCA 2N3055 transistor 2N6306 2N5804 VCER-175V BU120 BUX18A

2N6108

Abstract: 2N6180 2N6107 [P-N-P] mily Designation 2N6472 [N-P-N] 2N6248 [P-N-P] 2N6488 [N-P-N] 2N6491 [P-N-P] 2N5783 , »5 MHz typ. 676 2N6475 vCEB(«-i=nov h,.»30-150 -1.5A fj=5 MHz typ. 676 2N6248 VcerISUSI - -105 V hFE = , -31 526 2N6248 VCER(SUS) - -110\ lc - â'"14 A (TO-3) 677 2N3441 VCEB(SUSI - 150 V lc = 2 A ITO-661 529 , -66) 675 â'¢ Or higher voltage type 2N6248. High-Voltage lc = N-P-N 0.2 A P-N-P 'c = N-P-N 2 A P-N-P
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OCR Scan
BD278 BD27SA 2N6078 2N6077 T0-220AA T0-220AB

2N6476 JAN

Abstract: 40817 2N6107 [P-N-P] mily Designation 2N6472 [N-P-N] 2N6248 [P-N-P] 2N6488 [N-P-N] 2N6491 [P-N-P] 2N5783 , »5 MHz typ. 676 2N6475 vCEB(«-i=nov h,.»30-150 -1.5A fj=5 MHz typ. 676 2N6248 VcerISUSI - -105 V hFE = , -31 526 2N6248 VCER(SUS) - -110\ lc - â'"14 A (TO-3) 677 2N3441 VCEB(SUSI - 150 V lc = 2 A ITO-661 529 , -66) 675 â'¢ Or higher voltage type 2N6248. High-Voltage lc = N-P-N 0.2 A P-N-P 'c = N-P-N 2 A P-N-P
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OCR Scan
BD277 2N6476 JAN 40817 RCA 40250 transistor Transistor rca 40250 TO220I 2N6109 220AB 220AA
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