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Part : 2N6111G Supplier : ON Semiconductor Manufacturer : Avnet Stock : 1,016 Best Price : $0.3559 Price Each : $0.7799
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Part : 2N6111G Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : 597 Best Price : $0.3070 Price Each : $0.88
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2N6111 Datasheet

Part Manufacturer Description PDF Type
2N6111 Central Semiconductor NPN SILICON TRANSISTOR Original
2N6111 On Semiconductor POWER TRANSISTORS COMPLEMENTARY SILICON Original
2N6111 On Semiconductor Complementary Silicon Plastic Power Transistor Original
2N6111 On Semiconductor Bipolar Power TO220 PNP 7A 30V; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 Original
2N6111 STMicroelectronics SILICON PNP SWITCHING TRANSISTORS Original
2N6111 STMicroelectronics SILICON PNP SWITCHING TRANSISTORS Original
2N6111 STMicroelectronics TRANS GP BJT PNP 30V 7A 3TO-220 Original
2N6111 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N6111 Boca Semiconductor EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Scan
2N6111 Central Semiconductor Power Transistors Scan
2N6111 Continental Device India PNP Plastic Power Transistor Scan
2N6111 Continental Device India Semiconductor Device Data Book 1996 Scan
2N6111 Continental Device India POWER PACKAGE TRANSISTORS (PNP) Scan
2N6111 Continental Device India TO-220 PNP Power Package Transistors Scan
2N6111 Crimson Semiconductor EPITAXIAL BASE Transistor Scan
2N6111 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N6111 Ferranti Semiconductors Quick Reference Guide 1985 Scan
2N6111 Ferranti Semiconductors Power Transistors 1977 Scan
2N6111 General Electric Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. Scan
2N6111 General Electric TRANSISTOR LEISTUNGS BIPOLAR Scan
Showing first 20 results.

2N6111

Catalog Datasheet MFG & Type PDF Document Tags

2n5292

Abstract: 2N6109 2N6107/09/11 2N6288/90/92 GENERAL PURPOSE COMPLEMENTARY PAIRS DESCRIPTION The 2N6107, 2N6109, 2N6111 , the 2N6107, 2N6109, 2N6111 and their complementary NPN types are the 2N6292, 2N6290 and 2N6288 respectively. TO-220 INTERNAL SCHEMATIC DIAGRAMS ABSOLUTE MAXIMUM RATINGS Symbol PNP 2N6107 2N6109 2N6111 , Collector Cutoff Vce = 40V for 2N6111 /2N6288 0.1 mA Current Vc£= 60V for 2N6109/2N6290 0.1 mA (Vae =-1-5 V) Vc£= 80V for 2N6107/2NS292 0.1 mA Tc* 150°C Vce= 30V for 2N6111/2N6288 2 mA
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OCR Scan
BS5750 B0533 2n5292 2M6292 1-12-N LE17 2N6107/09/11-2N 2N6109/2NS290 2N6107/2N6292 2N6111/2N6288 09/2N6290

2N6107

Abstract: 2N6109 SavantIC Semiconductor Product Specification 2N6107 2N6109 2N6111 Silicon PNP Power , voltage 2N6109 VALUE -40 Open emitter -60 2N6111 Collector-emitter voltage -30 2N6109 Open base 2N6111 VEBO Emitter-base voltage V -80 2N6107 VCEO UNIT -50 , SavantIC Semiconductor Product Specification 2N6107 2N6109 2N6111 Silicon PNP Power Transistors , =-50V; BE=-1.5V,TC=125 -0.1 -2.0 2N6111 ICEX 2N6109 2N6107 Collector cut-off current
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Original
2N-6107 2N6109 pin
Abstract: r Z 7 SGS-THOMSON Ã" 7 # RaoeifäoiiLiÃra©«! 2N6107 2N6111 SILICON PNP SWITCHING , INDUSTRIAL EQUIPMENT DESCRIPTION The 2N6107 and 2N6111 are epitaxial-base PNP silicon transistors in , 80 = 0) = 100 Q .) = 0) 2N6111 40 V 80 40 V 70 30 V 5 V , devices voltage and current values are negative June 1997 1/4 2N6107/2N6111 THERMAL DATA , 00 V V Ci fo r 2N 6107 fo r 2N6111 1 1 3.5 V V V V ce = 4 V V ce = 4 V V ce -
OCR Scan
2N6107/2N6111

2N6107

Abstract: 2N6111 2N6107 2N6111 ® SILICON PNP SWITCHING TRANSISTORS s s STMicroelectronics PREFERRED , DESCRIPTION The 2N6107 and 2N6111 are epitaxial-base PNP silicon transistors in Jedec TO-220 plastic , Unit 2N6107 2N6111 40 V CBO Collector-Base Voltage (I E = 0) 80 V CEX , PNP devices voltage and current values are negative February 2001 1/4 2N6107/2N6111 THERMAL , for 2N6107 for 2N6111 Unit 0.1 0.1 1 1 mA mA 1 I CEO Max. V CE = 80 V V
STMicroelectronics
Original
2N6107 datasheets P011C

2n6107

Abstract: 2N6111 2N6107 2N6111 SILICON PNP SWITCHING TRANSISTORS s s SGS-THOMSON PREFERRED SALESTYPES PNP , The 2N6107 and 2N6111 are epitaxial-base PNP silicon transistors in Jedec TO-220 plastic package , SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t 2N6107 2N6111 , voltage and current values are negative June 1997 1/4 2N6107/2N6111 THERMAL DATA R t hj-ca se , 2N6107 for 2N6111 o T C = 150 C for 2N6107 for 2N6111 Test Cond ition s V CE = 80 V V CE = 40 V
STMicroelectronics
Original
BD534

1N5825

Abstract: 2N6107 2N6109 * . . . designed for use in general-purpose amplifier and switching applications. 2N6111 , 3.0 Adc - 2N6111, 2N6288 = 2.3 (Min) @ IC = 7.0 Adc - All Devices Collector-Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) - 2N6111, 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107 , Collector-Emitter Voltage Symbol 2N6111 2N6288 2N6109 2N6107 2N6292 4 Unit VCEO 30 50 , March, 2006 - Rev. 6 1 Publication Order Number: 2N6107/D 2N6107 2N6109 2N6111 2N6288 2N6292
ON Semiconductor
Original
1N5825 MSD6100

N629

Abstract: 2N6107 '" Bondrçi Wire Limit -Second Breakdown Limit â'"Thermely Limited - Tc-^CtSr^ePUse) I dc 2N6111.2N6288 . , > = 30 v (Min) ' 2N6111 â'¢ 2N6288 = 50 V (Min) -2N6109, 2N6290 = 70 V (Min) -2N6107, 2N6292 * DC Current Gain Specified to 7.0 Ampers hFE = 30-150 @ lc =3.0 A - 2N6111,2N6292 =2.3(Min) @ lc=7.0A - All Devices MAXIMUM RATINGS THERMAL CHARACTERISTICS PNP NPN 2N6107 2N6288 2N6109 2 N6290 2N6111 2N6292 Characteristic Symbol 2N6111 2N6288 2N6109 2N6290 2N6107 2N6292 Unit Collector-Emitter Voltage VCEO 30 50 70 V
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OCR Scan
2N6290-2N61072N6292 N629 bi 370 transistor e Scans-0063468 500US- VCC-30V

2n6111

Abstract: 2n6288 ORDERING INFORMATION Device 2N6107 2N6107G 2N6109 2N6109G 2N6111 2N6111G 2N6288 2N6288G 2N6292 2N6292G , PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 Complementary Silicon Plastic Power Transistors , 3.0 Adc - 2N6111, 2N6288 = 2.3 (Min) @ IC = 7.0 Adc - All Devices Collector-Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) - 2N6111, 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107, 2N6292 , Symbol 2N6111, 2N6288 2N6109 2N6107, 2N6292 2N6111, 2N6288 2N6109 2N6107, 2N6292 VCEO Value 30 50 70 40
ON Semiconductor
Original

2N6107

Abstract: 2N6109 designed for use in general­purpose amplifier and switching applications. 2N6111 2N6109 * NPN · , 2N6111, 2N6288 = 2.3 (Min) @ IC = 7.0 Adc - All Devices Collector­Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) - 2N6111, 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107, 2N6292 , 50 70 Vdc 40 VCEO VCB 2N6111 2N6288 30 Symbol 60 80 Vdc VEB IC , 2N6107 2N6109 2N6111 2N6288 2N6292 PD, POWER DISSIPATION (WATTS) 40 30 20 10 0 0
ON Semiconductor
Original
220AB
Abstract: Symbol Collector-Emitter Voltage 2N6111.2N6288 2N6109 2N6107, 2N6292 Collector-Base Voltage 2N6111, 2N6288 2N6109 2N6107, 2N6292 Value Unit Vdc VCEO 30 50 70 VCB Vdc 40 60 , )227-6005 FAX: (973) 376-8960 PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 2N6109 and 2N6292 , Specified to 7.0 Amperes hFE = 30-150 @ Ic = 3.0 Adc - 2N6111, 2N6288 = 2.3 (Min) @ Ic = 7.0 Adc - All Devices â'¢ Collector-Emitter Sustaining Voltage VCEO(SUS) = 30 Vdc (Min) - 2N6111, 2N6288 = 50 Vdc (Min New Jersey Semiconductor
Original

2N6288

Abstract: 2N6111 designed for use in general­purpose amplifier and switching applications. 2N6111 2N6109 * NPN · , 2N6111, 2N6288 = 2.3 (Min) @ IC = 7.0 Adc - All Devices Collector­Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) - 2N6111, 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107, 2N6292 , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS Symbol 2N6111 2N6288 2N6109 2N6107 2N6292 Unit VCEO 30 , Order Number: 2N6107/D 2N6107 2N6109 2N6111 2N6288 2N6292 PD, POWER DISSIPATION (WATTS) 40
ON Semiconductor
Original

2N6107

Abstract: 2N6111/2n6288 designed for use in general­purpose amplifier and switching applications. 2N6111 2N6109 * NPN · , 2N6111, 2N6288 = 2.3 (Min) @ IC = 7.0 Adc - All Devices Collector­Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) - 2N6111, 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107, 2N6292 , Temperature Range 2N6109 2N6107 2N6292 Unit 50 70 Vdc 40 VCEO VCB 2N6111 2N6288 , . 5 1 Publication Order Number: 2N6107/D 2N6107 2N6109 2N6111 2N6288 2N6292 PD, POWER
ON Semiconductor
Original
equivalents transistor 2n6109

2N6107

Abstract: 2N6111 2N6107 2N6111 SILICON PNP SWITCHING TRANSISTORS s s SGS-THOMSON PREFERRED SALESTYPES PNP , -220 DESCRIPTION The 2N6107 and 2N6111 are epitaxial-base PNP silicon transistors in Jedec TO-220 plastic , CBO Collector-Base Voltage (I E = 0) 2N6111 80 40 V V CEX Collector-Emitter , devices voltage and current values are negative June 1997 1/4 2N6107/2N6111 THERMAL DATA R , for 2N6111 Unit 0.1 0.1 1 1 mA mA 1 I CEO Max. V CE = 80 V V CE = 40 V
STMicroelectronics
Original

2N6292

Abstract: 2N6109 2N6111 2N6111G Shipping 50 Units / Rail TO-220AB 2N6292 TO-220AB (Pb-Free) http , PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 2N6109 and 2N6292 are Preferred Devices , = 30-150 @ IC = 3.0 Adc - 2N6111, 2N6288 = 2.3 (Min) @ IC = 7.0 Adc - All Devices ·Collector-Emitter Sustaining Voltage VCEO(sus) = 30 Vdc (Min) - 2N6111, 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc , Symbol Collector-Emitter Voltage Value Unit VCEO Collector-Base Voltage VCB 2N6111
ON Semiconductor
Original
Abstract: , 2N6109, 2N6111, 2N6288, 2N6290 and 2N6292 are epitaxial-base silicon transistors In Jedec TO , applications. The PNP types are the 2N6107, 2N6109, 2N6111 and their complementary NPN types are the 2N6292 , 2N6109 2N6111 NPN Symbol 2N6292 2N6290 2N6288 Unit VcBO Collector-base Voltage (lE = 0 , 2N6111/2N6288 for 2N6109/2N6290 for 2N6107/2N6292 Min. Max. Unit 0.1 0.1 0.1 mA mA mA for 2N6111/2N6288 for 2N6109/2N6290 for 2N6107/2N6292 2 2 2 mA mA mA Typ. I -
OCR Scan
7TBT537 2N6107/09/11-2N6288/90/92 6111/2N 2N6109/2N 6107/2N 2N6111/2N

2N6109

Abstract: 2N6292 2N6111 2N6111G Shipping 50 Units / Rail TO-220AB 2N6292 TO-220AB (Pb-Free) 4 50 , PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 2N6109 and 2N6292 are Preferred Devices , @ IC = 3.0 Adc - 2N6111, 2N6288 = 2.3 (Min) @ IC = 7.0 Adc - All Devices ·Collector-Emitter Sustaining Voltage VCEO(sus) = 30 Vdc (Min) - 2N6111, 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - , 40 60 80 2N6111, 2N6288 2N6109 2N6107, 2N6292 2 3 Vdc 30 50 70 2N6111, 2N6288
ON Semiconductor
Original
TO-220AB transistor package 70ADC

2N6109

Abstract: 2n6107 2N6107 2N6109 2N6111 2N6288 2N6290 2N6292 PNP NPN w w w. c e n t r a l s e m i . c o m , Storage Junction Temperature Thermal Resistance 2N6111 2N6109 2N6107 SYMBOL 2N6288 2N6290 2N6292 VCBO 40 , =20V (2N6111, 2N6288) ICEO VCE=40V (2N6109, 2N6290) ICEO VCE=60V (2N6107, 2N6292) IEBO VEB=5.0V BVCEO IC=100mA (2N6111, 2N6288) 30 BVCEO IC=100mA (2N6109, 2N6290) 50 BVCEO IC=100mA (2N6107, 2N6292) 70 VCE(SAT) VBE(ON , =4.0V, IC=2.5A (2N6109, 2N6290) VCE=4.0V, IC=3.0A (2N6111, 2N6288) VCE=4.0V, IC=7.0A VCE=4.0V, IC=0.5A, f
Central Semiconductor
Original
Abstract: * DC Current Gain Specified to 7.0 Amperes hpE = 3 0 -1 5 0 @ Iq = 3.0 Ade â'" 2N6111, 2N6288 = 2.3 , 30 Vdc (Min) â'" 2N6111, 2N6288 = 50 Vdc (Min) â'" 2N6109 = 70 Vdc (Min) â'" 2N6107, 2N6292 High , ) @ I q = 500 mAdc â'" 2N6107, 09, 11 T O -220A B Compact Package 2N6111 NPN 2 N 62 88 2N 62 , Symbol 2N6111 2N6288 2N6109 2N6107 2N6292 Unit v CEO 30 50 70 Vdc C o , , Inc. 1995 (W) MOTOROLA 2N6107 2N6109 2N6111 2N6288 2N6292 â'˜ ELECTRICAL CHARACTERISTICS (T -
OCR Scan
2N6057 2N6059 2N6050
Abstract: Device 2N6107G 2N6109G 2N6111G 2N6288G 2N6292G Device Marking 2N6107 2N6109 2N6111 2N6288 2N6292 Package , 2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors , Collector-Emitter Voltage 2N6111, 2N6288 2N6109 2N6107, 2N6292 Collector-Base Voltage 2N6111, 2N6288 2N6109 2N6107 , , 2013 - Rev. 10 Publication Order Number: 2N6107/D 2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 , CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 3) (IC = 100 mAdc, IB = 0) 2N6111, 2N6288 2N6109 2N6107 ON Semiconductor
Original

2N6292G

Abstract: 2N6292 2N6111 2N6111G Shipping 50 Units / Rail TO-220AB 2N6292 TO-220AB (Pb-Free) http , PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 2N6109 and 2N6292 are Preferred Devices , · · · · hFE = 30-150 @ IC = 3.0 Adc - 2N6111, 2N6288 = 2.3 (Min) @ IC = 7.0 Adc - All Devices Collector-Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) - 2N6111, 2N6288 = 50 Vdc (Min , Vdc 30 50 70 2N6111, 2N6288 2N6109 2N6107, 2N6292 Collector-Base Voltage VCB 2N6111
ON Semiconductor
Original
300 watts amplifier circuit diagram pnp power 2N6107-D marking code SUs 15

2N6109

Abstract: 2N6107 ©metteur VCE=-40V 'b =o 'cEO 2N 6109 -1 mA VCE=-20V "B =0 2N6111 i -1 mA VCE = -75 V Vbe = 1,5V , .5V tcase=150°C 'CEX 2N6109 -2 mA VCE =-37,5 V VBE = 1-5V 2N6111 -0,1 mA VCE = -30 V VBE = 1,5 V , saturation collecteur-émetteur 'c =-2A lB =-0,2 A 2N6111 -1 V lc = -6,5 A lB = -1,63 A -2 V VCE , 6109 -1,5 V VCE = -4V lc =-2 A 2N6111 -1,5 V * Pulsed t =300jus S
-
OCR Scan
PNP 2n series 2N 6107 an 6107 ZA2N CB-117

2N6292

Abstract: motorola 2N6109 transistor 7.0 Amperes hFE = 30­150 @ IC = 3.0 Adc - 2N6111, 2N6288 hFE = 2.3 (Min) @ IC = 7.0 Adc - All Devices · Collector­Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) - 2N6111, 2N6288 VCEO(sus , - 2N6107, 09, 11 · TO­220AB Compact Package 2N6111 NPN 2N6288 * 2N6292 , WATTS *MAXIMUM RATINGS Rating 2N6111 2N6288 Collector­Emitter Voltage Emitter­Base Voltage , 1.0 30 30 30 2.3 2N6107, 2N6292 2N6109 2N6111, 2N6288 All Devices Min 150 150 150
Motorola
Original
motorola 2N6109 transistor 2n6107 MOTOROLA 2N6057 MOTOROLA 2n6292r

transistor 40409

Abstract: 40409 Transistor P-N-P N-P-N P-N-P KJ-_ DJ, KJ D_KJ_P 6.5 18 12W IC Driving True Comp. 40979 (2N6292) 40980 (2N6111) - - - - - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - 40815 (2N4036) - - - 16 45 25W Comp , ) 40876 (2N6111) 40635 (2N2102) 40634'' (2N4036) - 40360 (2N2102) - Quasi-Comp. - - 40360 (2N2102 , (2N6292 ) 40872 (2N6111) - 40594 (2N6320) 40595 (2N5322) 40 Quasi-Comp. 40636 (2N3055) - 40594 (2N5320 , ) - 40871 (2N6292) 40872 (2N6111) - 40987 (2N5416) 130W 300W 200W Quasi-Comp. Paral. out. (6) 40988
-
OCR Scan
transistor 40409 40409 Transistor 40408 transistor 40409 TRANSISTOR 40389 40409 silicon 2N6386 TA8201 2N5492 TA8323 2N6103 TA8326
Showing first 20 results.