Shortform IC and Component Datasheets (Plus Cross Reference Data)
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First line: 2N6093 SILICON POWER TRANSISTOR PACKAGE STYLE TO-217 DESCRIPTION: 2N6093 High Gain Linear Power Amplifier Used Class Class Applications With Individual Ballast Emitter Resistor Built Temperature Sensing Diode.Abstract: .. The 2N6093 is a High Gain Linear RF Power Amplifier Used in Class A or Class B Applications With Individual Ballast Emitter Resistor and Built in Temperature Sensing Diode. MAXIMUM RATINGS. IC .. Tags: "RF Power Amplifier"2N6093
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First line: transistor R1Z .File QQGBZ/D Power Transistors Solid State Division 2N6093 75-W (PEP) Emitter-Ballasted Overlay Transistor with Temperature-Sensing Diode Silicon N-P-N Device High-Gain Linear Amplifiers Single-Sideband Equipment 30-MHz Single-Sideband Communications Watts Output (min.) with Gain: (mAbstract: .. .File No. 484 QQGBZ/D Power Transistors Solid State Division 2N609375-W 75-W PEP Emitter-Ballasted Overlay Transistor with Temperature-Sensing Diode Silicon N-P-N Device for High-Gain Linear .. Tags: transistor R1Zdatasheet abstract..