2N6076 Datasheet, Circuit, PDF, Cross Reference, & Application Note Results |
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1 - 20 of about 20 for 2N6076 |
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2N6076 |
Central Semiconductor |
PNP Epoxy - Switchin and General Purpose Transistors / Saturated Switch |
313.54 Kb, 3 Pages. |
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2N6076 |
Central Semiconductor |
PNP EPOXY - SWITCHING AND GENERAL PURPOSE / SATURATED SWITCH |
313.54 Kb, 3 Pages. |
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2N6076 |
Central Semiconductor |
Leaded Small Signal Transistor General Purpose |
20.02 Kb, 1 Pages. |
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2N6076 |
Continental Device India Limited |
Semiconductor Device Data Book 1996 |
103.54 Kb, 1 Pages. |
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2N6076 |
Fairchild Semiconductor |
Silicon PNP Small Signal Transistor |
286.69 Kb, 7 Pages. |
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2N6076 |
Fairchild Semiconductor |
SILICON PNP SMALL SIGNAL TRANSISTOR |
17.1 Kb, 2 Pages. |
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2N6076 |
Fairchild Semiconductor |
Silicon PNP Small Signal Transistor |
24.95 Kb, 3 Pages. |
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2N6076 |
General Electric |
Semiconductor Data Handbook 1977 |
640.56 Kb, 3 Pages. |
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2N6076 |
General Electric |
Semiconductor Data Book 1971 |
302.61 Kb, 2 Pages. |
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2N6076 |
General Electric Solid State |
PNP Silicon Transistor. 25V, 100mA. |
47.66 Kb, 2 Pages. |
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2N6076 |
National Semiconductor |
General Purpose Amplifiers and Switches |
320.12 Kb, 10 Pages. |
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2N6076 |
National Semiconductor |
PNP General Purpose Transistors |
47.78 Kb, 1 Pages. |
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2N6076 |
National Semiconductor |
PNP Transistor |
416.99 Kb, 11 Pages. |
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2N6076 |
Sprague |
Small Signal TO-92 Plastic Transistors |
370.91 Kb, 5 Pages. |
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2N6076 |
Sprague |
Semiconductor Data Book 1977 |
85.62 Kb, 1 Pages. |
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2N6076 |
N/A |
Shortform Transistor Datasheet Guide |
87.32 Kb, 1 Pages. |
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2N6076 |
N/A |
Shortform IC and Component Datasheets (Plus Cross Reference Data) |
100.24 Kb, 1 Pages. |
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2N6076_D26Z |
Fairchild Semiconductor |
Silicon PNP Small Signal Transistor |
24.95 Kb, 3 Pages. |
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2N6076_D27Z |
Fairchild Semiconductor |
Silicon PNP Small Signal Transistor |
24.95 Kb, 3 Pages. |
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2N6076_D75Z |
Fairchild Semiconductor |
Silicon PNP Small Signal Transistor |
24.95 Kb, 3 Pages. |
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| Fulltext Datasheet Results |
1 - 50 of about 70 for 2N6076 |
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First line: 0017^ STATE _Signal Transistors 2N5172, MPS5172, PN5172, 2N6076 Silicon Transistors TO-92 TO-SS GE/RCA MPS, PN5172 2N6076 silicon transistors designed general purpose applications. planar, passivated construction assures excellent device stability life. This high performance high value made possible Abstract: .. ^ 1 G E SOLIÂ STATE T* _Signal Transistors 2N5172 2N5172 , MPS5172 MPS5172 , PN5172 PN5172 , 2N6076 Silicon Transistors TO-92 TO-92 TO-SS The GE/RCA 2N, MPS, PN5172 PN5172 are NPN and 2N6076 is a PNP silicon transistors designed for .. Tags: datasheet abstract.. |
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First line: Semiconductor Corp. Adams Avenue Hauppauge, 11788 Tel: (631) 435-1110 Fax: (631) 435-1824 Abstract: .. 2N5172 2N5172 NPN TO-92 TO-92 ECB 2N6076 PNP TO-92 TO-92 ECB MPS5172 MPS5172 NPN TO-92 TO-92 EBC MPs6076 MPs6076 PNP TO-92 TO-92 EBC COMPLEMENTARY SILICON TRANSISTOR JEDEC TO-92 TO-92 CASE. DESCR IPTI ON The CENTRAL SEMICONDUCTOR 2N/MPS5172 MPS5172 .. Tags: datasheet abstract.. |
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First line: 2N6076 SILICON SMALL SIGNAL TRANSISTOR BVCEO (Min) (Min) Abstract: .. 2N6076. SILICON PNP SMALL SIGNAL TRANSISTOR BVCEO . . . . 25 V Min hFE . . . . 100 Min @ VCE = 10 V, IC = 10 mA. ABSOLUTE MAXIMUM RATINGS NOTE 1 TEMPERATURES Storage Temperature -55 Degrees C to 150 Degrees .. Tags: 2N6076 |
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First line: 2N6076 Small Signal Transistor 2N6076 Small Signal Transistor Features Abstract: .. 2N6076 — PNP Small Signal Transistor. 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com. 2N6076 Rev. 1.0.0 1. July 2008. 2N6076 PNP Small Signal Transistor. Features • BVceo .. .. Tags: 2N6076 |
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First line: 2N6076 Small Signal Transistor 2N6076 Small Signal Transistor Features Abstract: .. 2N6076 — PNP Small Signal Transistor. 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com. 2N6076 Rev. 1.0.0 1. July 2008. 2N6076 PNP Small Signal Transistor. Features • BVceo .. .. Tags: 2N6076 |
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First line: FAIRCHILD MICONDUCTOR 2N6076 SILICON SMALL SIGNAL TRANSISTOR BVceo (Min) (Min) ABSOLUTE MAXIMUM RATINGS (NOTE TEMPERATURES Storage Temperature Operating Junction Temperature Abstract: .. FAIRCHILD MICONDUCTOR i DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR BVceo .. 25 V Min l 2 3 hFE . . . 100 Min @ Vce = 10 V, Ic = 10 mA b c E 1 ABSOLUTE MAXIMUM RATINGS .. Tags: datasheet abstract.. |
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First line: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVceo 10mA VCE(SAT) Typical (MHz) Ccb@10V Typical (Pf) (mW) Min.-Max. IC,VCE(V> Max. 2N4256 100-500 2mA, 0.125 10mA, 2N4424 180-540 2mA, 50mA, 2N4425 130-b40 2mA, 50mA, 2IM5172 100-5110 10mA, 0.25 10mA, 2N5174 40-600 Abstract: .. 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N5420 2N5420 NPN 25 250 500 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N6076 PNP 25 100-5P0 100-5P0 10mA 10mA , 10 0.25 10mA 10mA , 1.0mA 300 5 360 D16G6 D16G6 NPN 12 20 8mA, 10 0.6 10mA 10mA , 1.0mA 1000 .9 200 D29E1 D29E1 .. Tags: datasheet abstract.. |
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First line: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVceo 10mA VCE(SAT) Typical (MHz) Ccb@10V Typical (Pf) (mW) Min.-Max. IC,VCE(V> Max. 2N4256 100-500 2mA, 0.125 10mA, 2N4424 180-540 2mA, 50mA, 2N4425 130-b40 2mA, 50mA, 2IM5172 100-5110 10mA, 0.25 10mA, 2N5174 40-600 Abstract: .. 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N5420 2N5420 NPN 25 250 500 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N6076 PNP 25 100-5P0 100-5P0 10mA 10mA , 10 0.25 10mA 10mA , 1.0mA 300 5 360 D16G6 D16G6 NPN 12 20 8mA, 10 0.6 10mA 10mA , 1.0mA 1000 .9 200 D29E1 D29E1 .. Tags: datasheet abstract.. |
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First line: 2N6076 SILICON SMALL SIGNAL TRANSISTOR BVCEO (Min) (Min) Abstract: .. 2N6076. SILICON PNP SMALL SIGNAL TRANSISTOR BVCEO . . . . 25 V Min hFE . . . . 100 Min @ VCE = 10 V, IC = 10 mA. ABSOLUTE MAXIMUM RATINGS NOTE 1 TEMPERATURES Storage Temperature -55 Degrees C to 150 Degrees .. Tags: 2N6076 |
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First line: SILICON SIGNAL MEDIUM CURRENT GENERAL PURPOSE AMPLIFIERS SWITCHES Type VcEO Min. (ffl Max. (mW) 1MHz Typical (pF) Typical (MHz) Comments Package Outline Specification Sheet D29F1 60-120 D29F2 100-200 D29F3 150-300 These devices feature capacitance, high voltage, noise. Ideal video drivers, decoder, Abstract: .. 1 40.77 2N6009 2N6009 250-5004 2N6076 100-500  —25 -0.25 360 '5 350 Full line distribution type featuring high performance and low cost. Complement to 2N5172 2N5172 . 1 40.13 1 h fà at Vce——IV, lc=â .. Tags: datasheet abstract.. |
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First line: 2N6076 SILICON SMALL SIGNAL TRANSISTOR BVCEO (Min) (Min) Abstract: .. 2N6076. SILICON PNP SMALL SIGNAL TRANSISTOR BVCEO . . . . 25 V Min hFE . . . . 100 Min @ VCE = 10 V, IC = 10 mA. ABSOLUTE MAXIMUM RATINGS NOTE 1 TEMPERATURES Storage Temperature -55 Degrees C to 150 Degrees .. Tags: 2N6076 |
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First line: SILICON SIGNAL SWITCHING AMPLIFIER COMPLEMENTARY PNP-NPN PAIRS Type VcEO lc' lllFE 50mA |SAT| 50mA, 2.5mA Max. 10V, 1MHz Typical (Pf) Typical (MHz) Package Outline Specification Sheet (mW) (niA) Min. Max. 2N5354 0.250 40.98 2N5418 0.250 41.11 2N5355 0.250 40.98 2N5419 0.250 41.11 2N5356 0.250 40.98 Abstract: .. 1 40.77 2N6009 2N6009 250-5004 2N6076 100-500  —25 -0.25 360 '5 350 Full line distribution type featuring high performance and low cost. Complement to 2N5172 2N5172 . 1 40.13 1 h fà at Vce——IV, lc=â .. Tags: datasheet abstract.. |
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First line: pn917 2N4291 NATL SEMICOND (DISCRETE) bSQUBO 0D3777t General Purpose Transistors Ascending Part Type Vcep(V) VcboOO lc/Vce (MHz) Package (mA/V) MPS6562 500/1.0 TO-92 MPS6563 350/1.0 TO-92 2N5221 50/10 TO-92 MMBT5771 10/1.0 TO-236 2N4290 100/10 TO-92 Abstract: .. 0 100 TO-92 TO-92 2N6076 25 25 100 500 10/10 TO-92 TO-92 MMBT3638 MMBT3638 25 25 30 50/1.0 100 TO-236 TO-236 MMBT3638A MMBT3638A 25 25 100 50/1.0 150 TO-236 TO-236 MMBT3702 MMBT3702 25 40 60 300 50/5.0 100 TO-236 TO-236 MMBT4126 MMBT4126 25 25 120 360 2/1.0 250 TO-236 TO-236 MMBT5226 MMBT5226 .. Tags: 2N4291 pn917 datasheet abstract.. |
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First line: D33D30 SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVceo 10mA VCE(SAT) Typical (MHz) Ccb@10V Typical (Pf) (mW) Min.-Max. IC,VCE(V> Max. 2N4256 100-500 2mA, 0.125 10mA, 2N4424 180-540 2mA, 50mA, 2N4425 130-b40 2mA, 50mA, 2IM5172 100-5110 10mA, 0.25 10mA, 2N5174 Abstract: .. 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N5420 2N5420 NPN 25 250 500 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N6076 PNP 25 100-5P0 100-5P0 10mA 10mA , 10 0.25 10mA 10mA , 1.0mA 300 5 360 D16G6 D16G6 NPN 12 20 8mA, 10 0.6 10mA 10mA , 1.0mA 1000 .9 200 D29E1 D29E1 .. Tags: D33D30 datasheet abstract.. |
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First line: 2N5305 SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVceo 10mA VCE(SAT) Typical (MHz) Ccb@10V Typical (Pf) (mW) Min.-Max. IC,VCE(V> Max. 2N4256 100-500 2mA, 0.125 10mA, 2N4424 180-540 2mA, 50mA, 2N4425 130-b40 2mA, 50mA, 2IM5172 100-5110 10mA, 0.25 10mA, 2N5174 Abstract: .. 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N5420 2N5420 NPN 25 250 500 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N6076 PNP 25 100-5P0 100-5P0 10mA 10mA , 10 0.25 10mA 10mA , 1.0mA 300 5 360 D16G6 D16G6 NPN 12 20 8mA, 10 0.6 10mA 10mA , 1.0mA 1000 .9 200 D29E1 D29E1 .. Tags: 2N5305 datasheet abstract.. |
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First line: 2N5305 SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVceo 10mA VCE(SAT) Typical (MHz) Ccb@10V Typical (Pf) (mW) Min.-Max. IC,VCE(V> Max. 2N4256 100-500 2mA, 0.125 10mA, 2N4424 180-540 2mA, 50mA, 2N4425 130-b40 2mA, 50mA, 2IM5172 100-5110 10mA, 0.25 10mA, 2N5174 Abstract: .. 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N5420 2N5420 NPN 25 250 500 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N6076 PNP 25 100-5P0 100-5P0 10mA 10mA , 10 0.25 10mA 10mA , 1.0mA 300 5 360 D16G6 D16G6 NPN 12 20 8mA, 10 0.6 10mA 10mA , 1.0mA 1000 .9 200 D29E1 D29E1 .. Tags: 2N5305 datasheet abstract.. |
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First line: SELECTOR GUIDE SILICON SIGNAL TRANSISTORS Current Vceo^^ 50/iA 25mA 25mA Voltage 75mA 75mA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 GET914 GET3013 GET3*46 2N6000 2N6002 GET3014 GET3638 GET3638A 2N6001 2N6000 216003 2N6002 GET3014 GET3638 GET3638A 2N6001 2NSOOO 2N6003 2N6Q02 2NS001 2N Abstract: .. 1 40.77 2N6009 2N6009 250-5004 2N6076 100-500  —25 -0.25 360 '5 350 Full line distribution type featuring high performance and low cost. Complement to 2N5172 2N5172 . 1 40.13 1 h fà at Vce——IV, lc=â .. Tags: datasheet abstract.. |
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First line: 2N5143* 2N5087 TO-92 Plastic Package Transistors (PNP) Maximum Ratings Electrical Characteristics Unless Otherwise Specified) Type ^CBO VCE0 VEBO 'c80 'ces vCEISAT) 3E(SAT) '(off) Freq CDIL (|m) (ma) (mA) (mA) (PF) (MHz) (mA) (nsj (dB) (MHz) (PF) Case Style 2N4972 0.625 0.02 TO-92 Abstract: .. TO-92-4 TO-92-4 2N5817 2N5817 50 40 5 0.625 0.6 0.1 25 0.5 20 25 500 2 0.75 1.2 500 15 100 50 TO-92-4 TO-92-4 100 200 2 2 2N6076 25 25 5 0.625 0.1 0.1 25 100 500 10 10 0.25 0.8 10 TO-92-1 TO-92-1 2N6519 2N6519 300 300 5 0.625 0.5 0.05 250 30 10 10 0.3 .. Tags: 2N5087 2N5143* datasheet abstract.. |
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First line: 2N5356* 2N3901 SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVceo 10mA VCE(SAT) Typical (MHz) Ccb@10V Typical (Pf) (mW) Min.-Max. IC,VCE(V> Max. 2N4256 100-500 2mA, 0.125 10mA, 2N4424 180-540 2mA, 50mA, 2N4425 130-b40 2mA, 50mA, 2IM5172 100-5110 10mA, 0.25 10mA, Abstract: .. 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N5420 2N5420 NPN 25 250 500 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N6076 PNP 25 100-5P0 100-5P0 10mA 10mA , 10 0.25 10mA 10mA , 1.0mA 300 5 360 D16G6 D16G6 NPN 12 20 8mA, 10 0.6 10mA 10mA , 1.0mA 1000 .9 200 D29E1 D29E1 .. Tags: 2N3901 2N5356* datasheet abstract.. |
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First line: 2N5143* 2N5087 TO-92 Plastic Package Transistors (PNP) Maximum Ratings Electrical Characteristics (Ta=25"C, Unless Otherwise Specified) Type ^C80 ^ceo Vebo 'cBO (MA) 'ces (MA) 0(V) (mA) ce(sat) 3eisat) (mA) (PF) (MHz) (mA) (dB) Freq (MHz) (PFJ CDIL Case Style 2N4972 0.625 0.02 300- TO-92 2N5086 Abstract: .. TO-92-4 TO-92-4 2N5817 2N5817 50 40 5 0.625 0.6 0.1 25 0.5 20 25 100 200 500 2 2 2 0.75 1.2 500 15 100 50 TO-92-4 TO-92-4 2N6076 25 25 5 0.625 0.1 0.1 25 100 500 10 10 0.25 0.8 10 TO-92-1 TO-92-1 2N6519 2N6519 300 300 5 0.625 0.5 0.05 250 30 45 45 40 20 .. Tags: 2N5087 2N5143* datasheet abstract.. |
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First line: BC pnp 200mA 2N5356* SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVceo 10mA VCE(SAT) Typical (MHz) Ccb@10V Typical (Pf) (mW) Min.-Max. IC,VCE(V> Max. 2N4256 100-500 2mA, 0.125 10mA, 2N4424 180-540 2mA, 50mA, 2N4425 130-b40 2mA, 50mA, 2IM5172 100-5110 10mA, 0.25 Abstract: .. 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N5420 2N5420 NPN 25 250 500 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N6076 PNP 25 100-5P0 100-5P0 10mA 10mA , 10 0.25 10mA 10mA , 1.0mA 300 5 360 D16G6 D16G6 NPN 12 20 8mA, 10 0.6 10mA 10mA , 1.0mA 1000 .9 200 D29E1 D29E1 .. Tags: 2N5356* BC pnp 200mA datasheet abstract.. |
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First line: MPS751 equivalent mps404a 2N5963 Small Signal Transistors TO-92 Case (Continued) TO-92 TYPE DESCRIPTION LEAD VCBO VCEO CODE *VCES VEBO ICBO (nA) *ICES *ICEV *hFE (1kHZ) 1,200 20,000 14,000 1,000 4,000 10,000 1,400 2,000 200,000 140,000 ---300 ----300 (mA) (SAT) (mA) TO-92-18R Abstract: .. 2N6076 PNP LOW NOISE ECB 25 25 5.0 100 25 100 500 10 10 0.25 10 13 200* - - - - 2N6426 2N6426 NPN DARLINGTON EBC 40 40 12 50 30 20,000 200,000 5.0 500 1.50 500 7.0 150 10 - - 2N6427 2N6427 NPN DARLINGTON EBC 40 40 12 50 30 14 .. Tags: 2N5963 MPS751 equivalent MPS751 MPS750 MPS404A MPS3704 2N5831 2N5823 2N5818 2N5816 2n5812 datasheet abstract.. |
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First line: 2N2925* SILICON SIGNAL GENERAL PURPOSE AMPLIFIERS SWITCHES Type VcEO 10mA Min. VCE(iat) 10mA TYPICAL (mW) Typical CP*) Typical (MHz) Comments Package Outline Specification Sheet 2N2711 30-90 beta spread, general purpose amplifier, 40.60 2N2712 75-225 non-epitaxial 2N2713 30-90 General purpose epitax Abstract: .. for general purpose applications; low cost; complement to 2N6076. 1 40.13 2N5232 2N5232 250-500 High voltage, high gain, low noise type suited for consumer or industrial usage. Typical 1.9dB wideband .. Tags: 2N2925* datasheet abstract.. |
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First line: SILICON SIGNAL SWITCHING AMPLIFIER COMPLEMENTARY PNP-NPN PAIRS Type VcEO lc' lllFE 50mA |SAT| 50mA, 2.5mA Max. 10V, 1MHz Typical (Pf) Typical (MHz) Package Outline Specification Sheet (mW) (niA) Min. Max. 2N5354 0.250 40.98 2N5418 0.250 41.11 2N5355 0.250 40.98 2N5419 0.250 41.11 2N5356 0.250 40.98 Abstract: .. PNP 2N6076. VeED V Pr @ 250C 250C mW Ie' mA @ HIV, 10mA 10mA . ~~~. I :::. @ 10mA 10mA , Max. V Im~, @ 10V, 1HMz .. Tags: datasheet abstract.. |
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First line: 2N5963 Small Signal Transistors TO-92 Case (Continued) TO-92 TYPE DESCRIPTION LEAD VCBO VCEO CODE *VCES VEBO ICBO (nA) *ICES *ICEV *hFE (1kHZ) 1,200 20,000 14,000 1,000 4,000 10,000 1,400 2,000 200,000 140,000 ---300 ----300 (mA) (SAT) (mA) TO-92-18R Abstract: .. 2N6076 PNP LOW NOISE ECB 25 25 5.0 100 25 100 500 10 10 0.25 10 13 200* - - - - 2N6426 2N6426 NPN DARLINGTON EBC 40 40 12 50 30 20,000 200,000 5.0 500 1.50 500 7.0 150 10 - - 2N6427 2N6427 NPN DARLINGTON EBC 40 40 12 50 30 14 .. Tags: 2N5963 datasheet abstract.. |
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First line: TO-92 Case (Continued) TO-92 TO-92-18R type family lead code vcbo vceo Vebo 'cbo (na) vcbo <ma) vce(s; HT)@ (mA) (PF) (MHz) (dB) toff 'to-92-18r *Vces *'ces **'cev *Crb *typ 2n5812 AMPL/SWITCH CBE* 0.75 2n5813 AMPL/SWITCH CBE* 0.75 2n5816 AMPL/SWITCH CBE* 0.75 Abstract: .. 2n6076 PNP LOW NOISE ECB 25 25 5.0 100 25 100 500 10 10 0.25 10 13 200* .. .. 2N6426 2N6426 NPN DARLINGTON EBC 40 40 12 50 30 20,000 200,000 5.0 500 1.50 500 7.0 150 10 — 2n6427 2n6427 NPN DARLINGTON EBC 40 40 12 50 30 .. Tags: datasheet abstract.. |
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First line: 2b0-b* SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVceo 10mA VCE(SAT) Typical (MHz) Ccb@10V Typical (Pf) (mW) Min.-Max. IC,VCE(V> Max. 2N4256 100-500 2mA, 0.125 10mA, 2N4424 180-540 2mA, 50mA, 2N4425 130-b40 2mA, 50mA, 2IM5172 100-5110 10mA, 0.25 10mA, 2N5174 Abstract: .. 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N5420 2N5420 NPN 25 250 500 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N6076 PNP 25 100-5P0 100-5P0 10mA 10mA , 10 0.25 10mA 10mA , 1.0mA 300 5 360 D16G6 D16G6 NPN 12 20 8mA, 10 0.6 10mA 10mA , 1.0mA 1000 .9 200 D29E1 D29E1 .. Tags: 2b0-b* datasheet abstract.. |
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First line: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVceo 10mA VCE(SAT) Typical (MHz) Ccb@10V Typical (Pf) (mW) Min.-Max. IC,VCE(V> Max. 2N4256 100-500 2mA, 0.125 10mA, 2N4424 180-540 2mA, 50mA, 2N4425 130-b40 2mA, 50mA, 2IM5172 100-5110 10mA, 0.25 10mA, 2N5174 40-600 Abstract: .. 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N5420 2N5420 NPN 25 250 500 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N6076 PNP 25 100-5P0 100-5P0 10mA 10mA , 10 0.25 10mA 10mA , 1.0mA 300 5 360 D16G6 D16G6 NPN 12 20 8mA, 10 0.6 10mA 10mA , 1.0mA 1000 .9 200 D29E1 D29E1 .. Tags: datasheet abstract.. |
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First line: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVceo 10mA VCE(SAT) Typical (MHz) Ccb@10V Typical (Pf) (mW) Min.-Max. IC,VCE(V> Max. 2N4256 100-500 2mA, 0.125 10mA, 2N4424 180-540 2mA, 50mA, 2N4425 130-b40 2mA, 50mA, 2IM5172 100-5110 10mA, 0.25 10mA, 2N5174 40-600 Abstract: .. 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N5420 2N5420 NPN 25 250 500 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N6076 PNP 25 100-5P0 100-5P0 10mA 10mA , 10 0.25 10mA 10mA , 1.0mA 300 5 360 D16G6 D16G6 NPN 12 20 8mA, 10 0.6 10mA 10mA , 1.0mA 1000 .9 200 D29E1 D29E1 .. Tags: datasheet abstract.. |
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First line: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVceo 10mA VCE(SAT) Typical (MHz) Ccb@10V Typical (Pf) (mW) Min.-Max. IC,VCE(V> Max. 2N4256 100-500 2mA, 0.125 10mA, 2N4424 180-540 2mA, 50mA, 2N4425 130-b40 2mA, 50mA, 2IM5172 100-5110 10mA, 0.25 10mA, 2N5174 40-600 Abstract: .. 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N5420 2N5420 NPN 25 250 500 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N6076 PNP 25 100-5P0 100-5P0 10mA 10mA , 10 0.25 10mA 10mA , 1.0mA 300 5 360 D16G6 D16G6 NPN 12 20 8mA, 10 0.6 10mA 10mA , 1.0mA 1000 .9 200 D29E1 D29E1 .. Tags: datasheet abstract.. |
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First line: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVceo 10mA VCE(SAT) Typical (MHz) Ccb@10V Typical (Pf) (mW) Min.-Max. IC,VCE(V> Max. 2N4256 100-500 2mA, 0.125 10mA, 2N4424 180-540 2mA, 50mA, 2N4425 130-b40 2mA, 50mA, 2IM5172 100-5110 10mA, 0.25 10mA, 2N5174 40-600 Abstract: .. 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N5420 2N5420 NPN 25 250 500 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N6076 PNP 25 100-5P0 100-5P0 10mA 10mA , 10 0.25 10mA 10mA , 1.0mA 300 5 360 D16G6 D16G6 NPN 12 20 8mA, 10 0.6 10mA 10mA , 1.0mA 1000 .9 200 D29E1 D29E1 .. Tags: datasheet abstract.. |
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First line: SPRflGUE Econoline Plastic-Molded Silicon SEPTR Transistors GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS Type POLARITY (mW) V(BR) Volts V(BR) Volts V(BR) Volts CURRENT GAIN (hFE) VCEISATI Min. (MHz) Max. (PF) toff Max. (nsec) N.F. Max. (dB) 'CBO Conditions Limits Max. (mA) Volts Min. Max. (mA) Max. Volts Abstract: .. 50 0.25 140 6.0 — 1.5 2N6009 2N6009 PNP 400 35 25 5 0.03 10 2 250 500 50 0.25 140 8.0 — 1.5 2N6076 PNP 360 25 25 3 0.10 10 10 100 500 10 0.25 200 13.0 - - D29E1 D29E1 PNP 500 35 25 5 0.10 500 2 45 500 0.75 100 15.0 — - D29E2 D29E2 .. Tags: datasheet abstract.. |
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First line: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVceo 10mA VCE(SAT) Typical (MHz) Ccb@10V Typical (Pf) (mW) Min.-Max. IC,VCE(V> Max. 2N4256 100-500 2mA, 0.125 10mA, 2N4424 180-540 2mA, 50mA, 2N4425 130-b40 2mA, 50mA, 2IM5172 100-5110 10mA, 0.25 10mA, 2N5174 40-600 Abstract: .. 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N5420 2N5420 NPN 25 250 500 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N6076 PNP 25 100-5P0 100-5P0 10mA 10mA , 10 0.25 10mA 10mA , 1.0mA 300 5 360 D16G6 D16G6 NPN 12 20 8mA, 10 0.6 10mA 10mA , 1.0mA 1000 .9 200 D29E1 D29E1 .. Tags: datasheet abstract.. |
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First line: 2N5998 2N6015 SELECTOR GUIDE SILICON SIGNAL TRANSISTORS Current Vceo^^ 50/iA 25mA 25mA Voltage 75mA 75mA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 GET914 GET3013 GET3*46 2N6000 2N6002 GET3014 GET3638 GET3638A 2N6001 2N6000 216003 2N6002 GET3014 GET3638 GET3638A 2N6001 2NSOOO 2N6003 2N Abstract: .. 1 40.77 2N6009 2N6009 250-5004 2N6076 100-500  —25 -0.25 360 '5 350 Full line distribution type featuring high performance and low cost. Complement to 2N5172 2N5172 . 1 40.13 1 h fà at Vce——IV, lc=â .. Tags: 2N6015 2N5998 datasheet abstract.. |
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First line: SELECTOR GUIDE SILICON SIGNAL TRANSISTORS Current Vceo^^ 50/iA 25mA 25mA Voltage 75mA 75mA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 GET914 GET3013 GET3*46 2N6000 2N6002 GET3014 GET3638 GET3638A 2N6001 2N6000 216003 2N6002 GET3014 GET3638 GET3638A 2N6001 2NSOOO 2N6003 2N6Q02 2NS001 2N Abstract: .. for general purpose applications; low cost; complement to 2N6076. 1 40.13 2N5232 2N5232 250-500 High voltage, high gain, low noise type suited for consumer or industrial usage. Typical 1.9dB wideband .. Tags: datasheet abstract.. |
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First line: BTB 600 BR tp5372 BTB 600 BR 00035U 8514019 SPRAGUE. SEMICONDS/ICS 03596 PLASTIC-CASE BIPOLAR TRANSISTORS Transistors '2N' 'TP' Device Types ELECTRICAL CHARACTERISTICS 'cBO Current Gain VcE(sat) Device Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. @VCB <aVCE Max. Min. Cob1 Type (mA) (nA) Min. Max. (mA) ( Abstract: .. 140 10 — — 1.5 JFA 2N6009 2N6009 500 35 25 5.0 30 25 250 500 10 2.0 0.25 50 140 10 — — 1.5 JFA 2N6076 500 25 25 5.0 100 25 100 500 10 10 0.25 10 — — 13 — — JFA NOTES: 3 V BR CES/ICES, as applicable. 1 .. Tags: BTB 600 BR tp5372 BTB 600 BR datasheet abstract.. |
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First line: 2N5998 SELECTOR GUIDE SILICON SIGNAL TRANSISTORS Current Vceo^^ 50/iA 25mA 25mA Voltage 75mA 75mA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 GET914 GET3013 GET3*46 2N6000 2N6002 GET3014 GET3638 GET3638A 2N6001 2N6000 216003 2N6002 GET3014 GET3638 GET3638A 2N6001 2NSOOO 2N6003 2N6Q02 2N Abstract: .. for general purpose applications; low cost; complement to 2N6076. 1 40.13 2N5232 2N5232 250-500 High voltage, high gain, low noise type suited for consumer or industrial usage. Typical 1.9dB wideband .. Tags: 2N5998 datasheet abstract.. |
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First line: 2n524* SELECTOR GUIDE SILICON SIGNAL TRANSISTORS Current Vceo^^ 50/iA 25mA 25mA Voltage 75mA 75mA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 GET914 GET3013 GET3*46 2N6000 2N6002 GET3014 GET3638 GET3638A 2N6001 2N6000 216003 2N6002 GET3014 GET3638 GET3638A 2N6001 2NSOOO 2N6003 2N6Q02 2N Abstract: .. PNP 2N6076. VeED V Pr @ 250C 250C mW Ie' mA @ HIV, 10mA 10mA . ~~~. I :::. @ 10mA 10mA , Max. V Im~, @ 10V, 1HMz .. Tags: 2n524* datasheet abstract.. |
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First line: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVceo 10mA VCE(SAT) Typical (MHz) Ccb@10V Typical (Pf) (mW) Min.-Max. IC,VCE(V> Max. 2N4256 100-500 2mA, 0.125 10mA, 2N4424 180-540 2mA, 50mA, 2N4425 130-b40 2mA, 50mA, 2IM5172 100-5110 10mA, 0.25 10mA, 2N5174 40-600 Abstract: .. 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N5420 2N5420 NPN 25 250 500 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N6076 PNP 25 100-5P0 100-5P0 10mA 10mA , 10 0.25 10mA 10mA , 1.0mA 300 5 360 D16G6 D16G6 NPN 12 20 8mA, 10 0.6 10mA 10mA , 1.0mA 1000 .9 200 D29E1 D29E1 .. Tags: datasheet abstract.. |
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First line: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVceo 10mA VCE(SAT) Typical (MHz) Ccb@10V Typical (Pf) (mW) Min.-Max. IC,VCE(V> Max. 2N4256 100-500 2mA, 0.125 10mA, 2N4424 180-540 2mA, 50mA, 2N4425 130-b40 2mA, 50mA, 2IM5172 100-5110 10mA, 0.25 10mA, 2N5174 40-600 Abstract: .. 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N5420 2N5420 NPN 25 250 500 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N6076 PNP 25 100-5P0 100-5P0 10mA 10mA , 10 0.25 10mA 10mA , 1.0mA 300 5 360 D16G6 D16G6 NPN 12 20 8mA, 10 0.6 10mA 10mA , 1.0mA 1000 .9 200 D29E1 D29E1 .. Tags: datasheet abstract.. |
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First line: SILICON SIGNAL SWITCHING AMPLIFIER COMPLEMENTARY PNP-NPN PAIRS Type VcEO lc' lllFE 50mA |SAT| 50mA, 2.5mA Max. 10V, 1MHz Typical (Pf) Typical (MHz) Package Outline Specification Sheet (mW) (niA) Min. Max. 2N5354 0.250 40.98 2N5418 0.250 41.11 2N5355 0.250 40.98 2N5419 0.250 41.11 2N5356 0.250 40.98 Abstract: .. 1 40.77 2N6009 2N6009 250-5004 2N6076 100-500 —25 -0.25 360 '5 350 Full line distribution type featuring high performance and low cost. Complement to 2N5172 2N5172 . 1 40.13 1 h fé at Vce——IV, lc=—50mA 50mA 2 VcE .. Tags: datasheet abstract.. |
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First line: 1N9148 SILICON SIGNAL GENERAL PURPOSE AMPLIFIERS SWITCHES Type VcEO 10mA Min. VCE(iat) 10mA TYPICAL (mW) Typical CP*) Typical (MHz) Comments Package Outline Specification Sheet 2N2711 30-90 beta spread, general purpose amplifier, 40.60 2N2712 75-225 non-epitaxial 2N2713 30-90 General purpose epitaxi Abstract: .. for general purpose applications; low cost; complement to 2N6076. 1 40.13 2N5232 2N5232 250-500 High voltage, high gain, low noise type suited for consumer or industrial usage. Typical 1.9dB wideband .. Tags: 1N9148 datasheet abstract.. |
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First line: 0133107 DDDOMMS MSULB BEI\/IELSEHELAB Ti7-o\ POLAR TRANSISTORS (CECC HIGH REL) HIGH ENERGY Type Number Code Package Vceo (cont) Vce/Ic 2N6033 CECC 2.6/40 2N6047 T063 -100 4/20 2N6049 T066 -100 4/0.5 2N6049E T066 -100 4/0.5 2N6050 750-12k 2N6051 750-12k Abstract: .. 2N6050 2N6050 2N6051 2N6051 2N6052 2N6052 2N6053 2N6053 2N6054 2N6054 2N6055 2N6055 2N6056 2N6056 2N6057 2N6057 2N6058 2N6058 2N6059 2N6059 2N6077 2N6077 2N6076 2N6079 2N6079 2N6190 2N6190 2N6192 2N6192 2N6193 2N6193 2N6211 2N6211 2N6212 2N6212 2N6213 2N6213 2N6214 2N6214 2N6216 2N6216 2N6226 2N6226 2N6227 2N6227 2N6228 2N6228 2N6229 2N6229 2N6230 2N6230 2N6231 2N6231 .. Tags: 2N6256 2N6220 PNP 2N60 datasheet abstract.. |
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First line: 2N5243 2N4355 2N5139 2N5139* 2N4121 CENTRAL SEMICONDUCTOR ---1989963 CENTRAL SEMICONDUCTOR DDDDS13 00213 T-n-o/ EPOXY SWITCHING GENERAL PURPOSE (Cont'd.) TYPE vCE(s)atlB 'CBO CASE 2N4060 TO-98 2N4061 TO-98 Abstract: .. 150 15 — — — T0-105 T0-105 2N5857 2N5857 80 80 5 50 300 150 10 0.4 15 150 15 — — — T0-105 T0-105 2N6076 25 25 5 100 500 10 10 .25 1 10 — 10 — — TO-98 TO-98 PNP EPOXY - SATURATED SWITCH TYPE VCB VCE Veb hFE at "e VCE VCE s .. Tags: 2N4121 2N5139* 2N5139 2N4355 2N5243 datasheet abstract.. |
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First line: 2N5143* 2N4355 CENTRAL SEMICONDUCTOR ---1989963 CENTRAL SEMICONDUCTOR DDDDS13 00213 T-n-o/ EPOXY SWITCHING GENERAL PURPOSE (Cont'd.) TYPE vCE(s)atlB 'CBO CASE 2N4060 TO-98 2N4061 TO-98 Abstract: .. 150 15 — — — T0-105 T0-105 2N5857 2N5857 80 80 5 50 300 150 10 0.4 15 150 15 — — — T0-105 T0-105 2N6076 25 25 5 100 500 10 10 .25 1 10 — 10 — — TO-98 TO-98 PNP EPOXY - SATURATED SWITCH TYPE VCB VCE Veb hFE at "e VCE VCE s .. Tags: 2N4355 2N5143* datasheet abstract.. |
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First line: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVceo 10mA VCE(SAT) Typical (MHz) Ccb@10V Typical (Pf) (mW) Min.-Max. IC,VCE(V> Max. 2N4256 100-500 2mA, 0.125 10mA, 2N4424 180-540 2mA, 50mA, 2N4425 130-b40 2mA, 50mA, 2IM5172 100-5110 10mA, 0.25 10mA, 2N5174 40-600 Abstract: .. 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N5420 2N5420 NPN 25 250 500 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N6076 PNP 25 100-5P0 100-5P0 10mA 10mA , 10 0.25 10mA 10mA , 1.0mA 300 5 360 D16G6 D16G6 NPN 12 20 8mA, 10 0.6 10mA 10mA , 1.0mA 1000 .9 200 D29E1 D29E1 .. Tags: datasheet abstract.. |
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First line: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVceo 10mA VCE(SAT) Typical (MHz) Ccb@10V Typical (Pf) (mW) Min.-Max. IC,VCE(V> Max. 2N4256 100-500 2mA, 0.125 10mA, 2N4424 180-540 2mA, 50mA, 2N4425 130-b40 2mA, 50mA, 2IM5172 100-5110 10mA, 0.25 10mA, 2N5174 40-600 Abstract: .. 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N5420 2N5420 NPN 25 250 500 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N6076 PNP 25 100-5P0 100-5P0 10mA 10mA , 10 0.25 10mA 10mA , 1.0mA 300 5 360 D16G6 D16G6 NPN 12 20 8mA, 10 0.6 10mA 10mA , 1.0mA 1000 .9 200 D29E1 D29E1 .. Tags: datasheet abstract.. |
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First line: 2N4425 SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVceo 10mA VCE(SAT) Typical (MHz) Ccb@10V Typical (Pf) (mW) Min.-Max. IC,VCE(V> Max. 2N4256 100-500 2mA, 0.125 10mA, 2N4424 180-540 2mA, 50mA, 2N4425 130-b40 2mA, 50mA, 2IM5172 100-5110 10mA, 0.25 10mA, 2N5174 Abstract: .. 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N5420 2N5420 NPN 25 250 500 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N6076 PNP 25 100-5P0 100-5P0 10mA 10mA , 10 0.25 10mA 10mA , 1.0mA 300 5 360 D16G6 D16G6 NPN 12 20 8mA, 10 0.6 10mA 10mA , 1.0mA 1000 .9 200 D29E1 D29E1 .. Tags: 2N4425 datasheet abstract.. |
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First line: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVceo 10mA VCE(SAT) Typical (MHz) Ccb@10V Typical (Pf) (mW) Min.-Max. IC,VCE(V> Max. 2N4256 100-500 2mA, 0.125 10mA, 2N4424 180-540 2mA, 50mA, 2N4425 130-b40 2mA, 50mA, 2IM5172 100-5110 10mA, 0.25 10mA, 2N5174 40-600 Abstract: .. 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N5420 2N5420 NPN 25 250 500 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N6076 PNP 25 100-5P0 100-5P0 10mA 10mA , 10 0.25 10mA 10mA , 1.0mA 300 5 360 D16G6 D16G6 NPN 12 20 8mA, 10 0.6 10mA 10mA , 1.0mA 1000 .9 200 D29E1 D29E1 .. Tags: datasheet abstract.. |
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First line: 2N5306 equivalent SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVceo 10mA VCE(SAT) Typical (MHz) Ccb@10V Typical (Pf) (mW) Min.-Max. IC,VCE(V> Max. 2N4256 100-500 2mA, 0.125 10mA, 2N4424 180-540 2mA, 50mA, 2N4425 130-b40 2mA, 50mA, 2IM5172 100-5110 10mA, 0.25 10 Abstract: .. 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N5420 2N5420 NPN 25 250 500 50mA 50mA , 1 0.25 50mA 50mA , 2.5mA 250 4 400 2N6076 PNP 25 100-5P0 100-5P0 10mA 10mA , 10 0.25 10mA 10mA , 1.0mA 300 5 360 D16G6 D16G6 NPN 12 20 8mA, 10 0.6 10mA 10mA , 1.0mA 1000 .9 200 D29E1 D29E1 .. Tags: 2N5306 equivalent datasheet abstract.. |
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