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2N6055 Central Semiconductor Corp Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN visit Digikey Buy
2N6055 LEAD FREE Central Semiconductor Corp TRANS NPN 60V 8A TO-3 visit Digikey Buy
BYI-1T Microsemi Corporation Transistor visit Digikey Buy
BYI-1F Microsemi Corporation Transistor visit Digikey Buy
BYI-1 Microsemi Corporation Transistor visit Digikey Buy
SRF4427G Microsemi Corporation Transistor visit Digikey Buy

2N6055+transistor

Catalog Datasheet MFG & Type PDF Document Tags

2N6096

Abstract: 2N6055 overall value. REV 1 Motorola Bipolar Power Transistor Device Data 3-97 2N6055 2N6096 ` , . Switching Times 3-98 Motorola Bipolar Power Transistor Device Data 2N6055 2N6056 0.01 , There are two limitations on the power handling ability of a transistor: average ¡unction temperature and second break down. Safe operating area curves indicate lc - Vc e limits of the transistor that must be observed for reliable operation; I.e., the transistor must not be subjected to greater dissipa
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N6056 2N6055 MOTOROLA

2N6055 MOTOROLA

Abstract: Darlington Silicon Power Transistor . REV 1 © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 2 Figure 2 , 0.05 0.1 0.3 0.2 Motorola Bipolar Power Transistor Device Data Figure 3. Switching Times 0.2 , There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ­ VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater
Motorola
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Darlington Silicon Power Transistor 10 amp npn darlington power transistors 100 amp npn darlington power transistors power transistors 2N6056 MOTOROLA POWER BIPOLAR JUNCTION TRANSISTOR 2N6055/D

2N6055 MOTOROLA

Abstract: 2N6055 2 Motorola Bipolar Power Transistor Device Data 2N6055 2N6056 0.1 0.2 0.3 0.5 , limitations on the power handling ability of a transistor: average junction temperature and second break down. Safe operating area curves indicate Iq - V q e limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipa tion than the curves , Transistor Device Data 3 2N6055 2N6056 NPN 2N6055, 2N6056 hFE, D C CURRENT GAIN Figure 8. DC
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2N6055 transistor

2N6055

Abstract: 2N6053 COMPLEMENTARY POWER DARLINGTON The 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intended for use in power linear and switching applications. The complementary NPN type is the 2N6055 ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO #Collector-Emitter Voltage IB=0 VCBO Collector-Base Voltage IE=0 VEBO Value Emitter-Base Voltage Continuous IC Collector Current Peak IB Base
Comset Semiconductors
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2N6055 transistor

Abstract: 2N6055 2N6053 PNP 2N6055 NPN COMPLEMENTARY POWER DARLINGTON The 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intended for use in power linear and switching applications. The complementary NPN type is the 2N6055 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO #Collector-Emitter Voltage IB=0 2N6053 2N6055 60 V VCBO Collector-Base Voltage IE=0 2N6053 2N6055
Comset Semiconductors
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Darlington NPN Darlington transistor

2N6055

Abstract: 2N6055 Darlington complementary silicon power transistor 15.26 Transistors Darlington . Page 1 of 1 Enter Your Part # Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N6055 2N6055 Darlington complementary silicon power transistor Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to find! 2) Their price was very reasonable (unlike other vendors). 3) Their low free shipping threshold was much
American Microsemiconductor
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2n6053

Abstract: ductoi ^Pioducii, Unc. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6053/2N6055 COMPLEMENTARY POWER DARLINGTON The 2N6053 Is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intended for use in power linear and switching applications. The complementary NPN type is the 2N6055 ABSOLUTE MAXIMUM RA TINGS Symbol Ratings VCEO
New Jersey Semiconductor
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2N6301 MOTOROLA

Abstract: TP5AT ) VCE, COLLECTOR-EMITT~@Wdi;@$ (VOLTS) ,. There ! , I Of a transistor: average junction , transistor that must be observed for ~@~&~J~-~$Peration; i.e., the transistor must not be subjected
Motorola
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2N6298 2N6300 2N6054 2N6299 2N6301 2N6301 MOTOROLA TP5AT 2N6053 MOTOROLA 2n6299 motorola AN-415

2N6055

Abstract: 2N6053 Data Sheet Central Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 â'¢ Fax: (631) 435-1824 2N6053 2N6054 PNP 2N6055 2N6056 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTOR JEDEC TO-3 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6053, 6055 Series types are Complementary Silicon Darlington Power Transistors designed for amplifier and switching applications. MAXIMUM RATINGS (TC=25°C) Collector-Base
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2N6052

2N6053

Abstract: 2N6055 GENERAL TRANSISTOR CORP 24E D â  3^20001 000001,3 fa General Transistor Corporation 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 â'¢ Telex 65-3474 « FAX (213) 672-2905 NPN Power Transistors T-33-W -r-33-3) -r-33 '15 CASE TO-3 lc(MAX) = 2-50A :Vceo s 35-500V Type No. PNP complement DARLINGTON VCEO (sus) (v) IC (max) (A) hFE@IC/VCE (min-max @ A/V) PD@ TC = 25SC (Watts) fr (MHz) MJ1000 MJ900 yes 60 8 1000® 3 90 â'¢ MJ1001 MJ901 yes 80 8 1000@ 3 90 MJ3001 MJ2501 yes
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N6054

2N6055

Abstract: 2N6056 Bipolar Power Transistor Device Data 3­97 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , Motorola Bipolar Power Transistor Device Data 2N6055 2N6056 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 , , COLLECTOR­EMITTER VOLTAGE (VOLTS) There are two limitations on the power handling ability of a transistor , the transistor that must be observed for reliable operation; i.e., the transistor must not be , Motorola Bipolar Power Transistor Device Data 3­99 2N6055 2N6056 NPN 2N6055, 2N6056 20,000 10,000
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2N6055

Abstract: 2N6056 General Transistor Corporation CASE TO-3 le (MAX) = 2-50A V c e o (sus) = 35-500V NPN Power Transistors PNP complement MJ1000 yes yes yes MJ900 MJ1001 MJ3001 MJ13014 DARLINGTON MJ901 MJ2501 yes MJ10012 MJ13015 MJ 13330 VCEO (sus) IC (max) (v) Type No. (A) 60 80 8 PD@ 8 10 10 80 350 400 hFE@IC/VCE (min-max @ A/V) TC = 259C fr (MHz) (Watts) 1000 @ 3 1000@ 3 1000 @ 5 90 90 150 8-20 @ 5 150 400 200
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