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2N6055 transistor

Catalog Datasheet MFG & Type PDF Document Tags

2N6096

Abstract: 2N6055 MOTOROLA overall value. REV 1 Motorola Bipolar Power Transistor Device Data 3-97 2N6055 2N6096 ` , . Switching Times 3-98 Motorola Bipolar Power Transistor Device Data 2N6055 2N6056 0.01 , Figure 7. Capacitance Motorola Bipolar Power Transistor Device Data 3-99 2N6055 2N6056 NPN 2N , C E O (s u s ) = 60 vdc (Min) - 2N6055 = 80 Vdc (Min) - 2N6056 Low Collector-Emitter Saturation , (1) Rating Symbol 2N6055 2N6056 Unit Collector-Emitter Voltage Collector-Base Voltage
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N6056 2N6055 MOTOROLA

2N6055 MOTOROLA

Abstract: Darlington Silicon Power Transistor Power Transistor Device Data 5 2N6055 2N6056 Motorola reserves the right to make changes , Motorola Bipolar Power Transistor Device Data *2N6055/D* 2N6055/D Motorola , MOTOROLA Order this document by 2N6055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6055 , 2N6055 VCEO(sus) = 80 Vdc (Min) - 2N6056 · Low Collector­Emitter Saturation Voltage - VCE(sat) = 2.0 , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (1) Rating Symbol 2N6055 2N6056 Unit
Motorola
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Darlington Silicon Power Transistor 10 amp npn darlington power transistors 100 amp npn darlington power transistors 2N6056 MOTOROLA POWER BIPOLAR JUNCTION TRANSISTOR power transistors 2N6055/D

2N6055 MOTOROLA

Abstract: 2N6055 2 Motorola Bipolar Power Transistor Device Data 2N6055 2N6056 0.1 0.2 0.3 0.5 , Transistor Device Data 3 2N6055 2N6056 NPN 2N6055, 2N6056 hFE, D C CURRENT GAIN Figure 8. DC , Power Transistor Device Data 2N6055 2N6056 PACKAGE DIMENSIONS x r- M J U - D 2 PL l£ t K , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6055/D NPN D arlington C , itter Sustaining Voltage - @ 1 0 0 mA V c E O ( s u s ) = 60 Vdc (Min) - 2N6055 = 80 Vdc (Min) -
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2N6055 transistor

2N6055

Abstract: 2N6053 COMPLEMENTARY POWER DARLINGTON The 2N6053 is a silicon epitaxial base PNP transistor in monolithic , linear and switching applications. The complementary NPN type is the 2N6055 ABSOLUTE MAXIMUM RATINGS , Temperature 2N6053 2N6055 2N6053 2N6055 2N6053 2N6055 2N6053 2N6055 2N6053 2N6055 2N6053 2N6055 2N6053 2N6055 2N6053 2N6055 2N6053 2N6055 Unit 60 V 60 V 5.0 V 8 A 16 120 , Thermal Resistance, Junction to Case Value 2N6053 2N6055 Unit 1.75 °C/W 1 ELECTRICAL
Comset Semiconductors
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2N6055 transistor

Abstract: 2N6055 2N6053 PNP 2N6055 NPN COMPLEMENTARY POWER DARLINGTON The 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They , 2N6055 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO #Collector-Emitter Voltage IB=0 2N6053 2N6055 60 V VCBO Collector-Base Voltage IE=0 2N6053 2N6055 60 V VEBO Emitter-Base Voltage 2N6053 2N6055 5.0 V Continuous 2N6053 2N6055
Comset Semiconductors
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Darlington NPN Darlington transistor

2N6055

Abstract: 2N6055 Darlington complementary silicon power transistor 15.26 Transistors Darlington . Page 1 of 1 Enter Your Part # Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N6055 2N6055 Darlington complementary silicon power transistor Enter code , Price: You Save: 2N6055 $ 19.08 Information Spec Sheets Tutorials Shipping FAQs $ 15.26 $ 3.82 , /2n6055.html 4/12/2010 American Microsemiconductor
American Microsemiconductor
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2n6053

Abstract: AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6053/2N6055 COMPLEMENTARY POWER DARLINGTON The 2N6053 Is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and are mounted , complementary NPN type is the 2N6055 ABSOLUTE MAXIMUM RA TINGS Symbol Ratings VCEO , i IB=0 i 2N6053 ; 2N6055 2N6053 IE=0 2NDUOD t â'ž ,. :C°"'â"¢ 2N6053 2N6055 2N6053 2N6055 Unit 60 V 60 V 5.0 V 8 1C â'¢Â£Â£ e-c* IB PTOT
New Jersey Semiconductor
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2N6053/2N6055

2N6301 MOTOROLA

Abstract: TP5AT ~(~~~I = 60 Vdc IMinI - 2N6053. 2N6055, 2N6298. 2N6300 = 80 Vdc (Min) 2N6054. 2N6056. 2N6299. 2N6301 l , Collector-Emitter Sustaining Voltage (1) OOmAdc, Collector Cutoff lB=O) 2N6055, 2N6298 , ) 2N6053, 2N6055, 2N6298, 2N6300 - (vcE=40vdC, lB=O) 2N6054, 2N6056, 2N6299 , 7.0 10 PNP N PN 2N6053, 2N6054, 2N6298, 2N6299 2N6055, 2N6056, 2N6300, 2N6301 , LTS) SCHEMATIC NPN 2N6055 2N6056 2N6300 2N6301 Collector ~- ­- 1 I
Motorola
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2N6301 MOTOROLA TP5AT 2N6053 MOTOROLA 2n6299 motorola SILICON COMPLEMENTARY transistors darlington AN-415 DS3231

2N6055

Abstract: 2N6053 ) 435-1110 â'¢ Fax: (631) 435-1824 2N6053 2N6054 PNP 2N6055 2N6056 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTOR JEDEC TO-3 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION , 'C â'¢cm «B PD TJ> â  0JC 1 stg 2N6053 2N6054 2N6055 2N6056 UNIT 60 80 V 60 80 V 5.0 5.0 , 5.0V 00mA (2N6053, 2N6055) 00mA (2N6054, 2N6056) .OA, IB=16mA â'¢OA, IB=80mA â'¢OA, IB=80mA 3.0V , =0.1MHz (2N6053, 2N6052») 10V, 1E=0, f=0.1 MHz (2N6055, 2N6056) MIN MAX UNIT 0.5 mA 5.0 mA 0.5 mA 2.0
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250A darlington transistor

Abstract: npn darlington transistor 150 watts GENERAL TRANSISTOR CORP 24E D â  3^20001 000001,3 fa General Transistor Corporation 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 â'¢ Telex 65-3474 « FAX (213) 672-2905 NPN Power Transistors T-33-W -r-33-3) -r-33 '15 CASE TO-3 lc(MAX) = 2-50A :Vceo s 35-500V Type No. PNP complement DARLINGTON VCEO (sus) (v) IC (max) (A) hFE@IC/VCE (min-max @ A/V) PD@ TC = 25SC (Watts , DARLINGTON VCEO (sus) (V) IC (max) (A) hFE@IC/VCE (min-max @ bN) PD@ TC = 25SC (Watts) fr (MHz) 2N6055
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MJ1000 MJ900 MJ1001 MJ901 MJ10012 250A darlington transistor npn darlington transistor 150 watts Darlington 40A npn darlington transistor 200 watts MJ13330 transistor 1060 MJ3001 MJ2501

BU108

Abstract: BD139 Motorola Bipolar Power Transistor Device Data 2N6055 2N6056 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 , Motorola Bipolar Power Transistor Device Data 3­99 2N6055 2N6056 NPN 2N6055, 2N6056 20,000 10,000 , 60 Vdc (Min) - 2N6055 VCEO(sus) = 80 Vdc (Min) - 2N6056 · Low Collector­Emitter Saturation Voltage , Collector­Base Voltage Emitter­Base Voltage Symbol VCEO VCB VEB IC IB 2N6055 60 60 2N6055 2N6056* *Motorola , Vdc Adc 5.0 8.0 16 Collector Current - Continuous Peak Base Current 120 mAdc 2N6055 2N6056 100 0.571
Motorola
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BU108 BD139 BU326 BU100 MJ15012 MJE15030 2N6339 2N6341 2N6497 MJ15011
Abstract: General Transistor Corporation CASE TO-3 le (MAX) = 2-50A V c e o (sus) = 35-500V NPN Power Transistors PNP complement MJ1000 yes yes yes MJ900 MJ1001 MJ3001 MJ13014 DARLINGTON MJ901 MJ2501 yes MJ10012 MJ13015 MJ 13330 VCEO (sus) IC (max) (v) Type No. (A) 60 80 8 PD@ 8 10 10 80 350 400 hFE@IC/VCE (min-max @ A/V) TC = , Power Darlington Transistors PNP (SUS) = 6 0-120V DARLINGTON PD@ complement 2N6055 -
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MJ13331 2N6057 2N6058 2N6059 2N6383 2N6384

RCA 40872

Abstract: rca 40872 transistor - 80 V hpE = 1000 min. @ 3 A ton 1 1 MS typ. tf = 3 ms typ. ts = 1 ms typ. 2N6385 [N-P-N) 2N6055 , = 0.5 ps typ tf = 1.2 ps typ ts - 1 ps typ POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR , 2 5 0.01 2.8 5 2N6385 Darlington 80 80 80 1000 min. 5 3 0.3 3 80 2 5 0.01 2.8 5 2N6055 Darlington
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2N6534 RCA 40872 rca 40872 transistor RCA 40595 transistor RCA 40594 transistor rca 40871 transistor rca 40636 ITO-66 2N6337 2N6535 2N6536 2N6537
Abstract: 8254022 SILICON TRANSISTOR CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS (Continued) Type 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 2N5745 , 2N6046 2N6047 2N6048 2N6049 2N6050 2N6051 2N6052 2N6053 2N6054 2N6055 2N6056 2N6057 2N6058 , SILICON TRANSISTOR CORF SILICON TRANSISTOR CORP 88D 00800 D 7 r v J i? 3 * / 3 â , 2 2 S ILIC O N TRANSISTOR CORP _ 88D 0 0 8 0 1 SILICON TRANSISTOR CORP äfl 7 â -
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2N5758 2N5759 2N5760 2N5784 2N5785 2N5786

BUV48I

Abstract: BU808DXI BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following , Development please contact your nearest Sales Office 7 BIPOLAR TRANSISTOR INDUSTRY STANDARD , 2N3716 2N5629 BIPOLAR TRANSISTOR INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST , 2N6051 2N6052 2N6053 2N6055 2N6057 2N6058 2N6059 2N6098 2N6099 BUX10 BUX10 BUX10 BUX10
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BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025

2N5979

Abstract: 2n5978 - 5 - FOR USE BY ELECTRICIANS OVERSEAS : HBrhSliSIXSIftlSK (New Transistor Manual) lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English translation key given below. m m m m (Ta~25'o â'¢ « / Vf  , 60 5 8 A 100 w (Te «25'C) 200 500 60 3000 3 4 A JEDEC 2N6055*8£ Y 102 2SB585 ii^T'l » 503
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2N5979 2N5984 2N5985 2SB587 2SB588 2n5978 2N3055 2N5977 2SB579 2N5978 2SB580

transistor buv18a

Abstract: motorola transistor cross reference evice N um bers in Bold type are preferred BIPOLAR POWER TRANSISTOR SELECTOR GUIDE & CROSS REFERENCE , (sus) Volts Min 800 700* 750* 6 8 100 60 Device Type NPN MJ8503 BU208A MJ12004 2N5758 MJ1000## 2N6055 , ' ` ' * M f MOTOROLA 52 BIPOLAR POWER TRANSISTOR SELECTOR GUIDE & CROSS REFERENCE , POWER TRANSISTOR SELECTOR GUIDE & CROSS REFERENCE MOTOROLA 53 TABLE 11 - METAL TO-204, TO , preferred ' ' , ^ . · - V -V MOTOROLA 54 BIPOLAR POWER TRANSISTOR SELECTOR
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MPSU51 transistor buv18a motorola transistor cross reference BUX98A motorola N6030 BUT13 transistor buv10 MPSU10 MPSU02 MPSU03 MPSU04 MPSU01 MPSU01A

mpsu57 cross

Abstract: Device Numbers in Bold type are preferred â frti 'â'¢ ?. BIPOLAR POWER TRANSISTOR SELECTOR GUIDE , 150 8 60 MJ1000## MJ900## 1k min 3 2N6055## 2N6053## 750/18k 4 MJ1001 , * * r ' , BIPOLAR POWER TRANSISTOR SELECTOR GUIDE & CROSS REFERENCE TABLE 11 - METAL TO , preferred BIPOLAR POWER TRANSISTOR SELECTOR GUIDE & CROSS REFERENCE MOTOROLA 53 TABLE 11 - METAL , * " - A 1 â'¢ 5 - S p BIPOLAR POWER TRANSISTOR SELECTOR GUIDE & CROSS REFERENCE
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mpsu57 cross MPSU60 MPSU52 MPSU51A MPSU45 MPSU95 MPSU05

transistor tip601

Abstract: TIP601 V at lc = 10 A â'¢ Similar to 2N6055, 2N6056, 2N6383, 2N6384, 2N6385 T T-33-29 device schematic , transistor parameters. functional tests at 25 °C free-air temperature PARAMETER TEST CONDITIONS'' MIN TYP
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TIP600 TIP601 TIP602 TIP605 TIP606 TIP607 transistor tip601 BA 5205 L

RCA 40872

Abstract: RCA 40636 transistor - 80 V hpE = 1000 min. @ 3 A ton 1 1 MS typ. tf = 3 ms typ. ts = 1 ms typ. 2N6385 [N-P-N) 2N6055 , = 0.5 ps typ tf = 1.2 ps typ ts - 1 ps typ POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR
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RCA 40636 transistor NPN Transistor 2N3055 darlington 40872 transistor 40872 rca rca8203a RCA8203 RCA8350 BDX33 BDX34 T0-220 BDX34A BDX34B
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