2N5883 2N5884 2N5885 2N5886 2N5883/D 2N5984 2N5883G 2N5884G 2N5885G 2N5886G

2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High-Power Transistors Complementary silicon

2N5883 2N5883, 2N5884 2N5884 (PNP) 2N5885 2N5885, 2N5886 2N5886 (NPN) 2N5884 2N5884 and 2N5886 2N5886 are Preferred Devices Complementary Silicon High-Power Transistors Complementary silicon high-power transistors are designed for general-purpose power amplifier and switching applications. Features 25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 80 VOLTS, 200 WATTS · Low Collector-Emitter Saturation Voltage - · · · · http://onsemi.com VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage Excellent DC Current Gain - hFE = 20 (min) at IC = 10 Adc High Current Gain Bandwidth Product - ft = 4.0 MHz (min) at IC = 1.0 Adc Pb-Free Packages are Available* TO-204AA (TO-3) CASE 1-07 STYLE 1 ÎÎ Î Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎ Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (Note 1) Rating Symbol Collector-Emitter Voltage 2N5883 2N5883, 2N5885 2N5885 2N5884 2N5884, 2N5886 2N5886 VCEO Collector-Base Voltage Value Unit Vdc 60 80 VCB 2N5883 2N5883, 2N5885 2N5885 2N5884 2N5884, 2N5886 2N5886 Emitter-Base Voltage MARKING DIAGRAM Vdc 60 80 VEB 5.0 Vdc Collector Current - Continuous Peak IC Base Current IB 7.5 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 200 1.15 W W/°C TJ, Tstg 65 to + 200 °C 2N588xG AYYWW MEX Operating and Storage Junction Temperature Range Adc 25 50 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Case qJC 0.875 2N588x G A YY WW MEX = Device Code x = 3, 4, 5, or 6 = Pb-Free Package = Assembly Location = Year = Work Week = Country of Origin °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC registered data. Units and conditions differ on some parameters and re-registration reflecting these changes has been requested. All above values most or exceed present JEDEC registered data. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 March, 2006 - Rev. 11 1 Publication Order Number: 2N5883/D 2N5883/D 0 0 25 2 http://onsemi.com Figure 1. Power Derating 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 PD, POWER DISSIPATION (WATTS) 25 50 75 100 125 150 175 200 Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î ÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î Î Î Î Î ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎ ÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 2. Indicates JEDEC Registered Data. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 4. fT = |hfe| · ftest. fT 20 - - - 0.7 ms - 1.0 ms tf (VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc) pF ts Fall Time MHz 1000 500 tr Storage Time - - - hfe Rise Time 4.0 Cob - 0.8 ms SWITCHING CHARACTERISTICS Small-Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 kHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 2N5883 2N5883, 2N5884 2N5884 2N5885 2N5885, 2N5886 2N5886 Current-Gain - Bandwidth Product (Note 4) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz) DYNAMIC CHARACTERISTICS Collector-Emitter Saturation Voltage (Note 3) (IC = 15 Adc, IB = 1.5 Adc) (IC = 25 Adc, IB = 6.25 Adc) VCE(sat) Base-Emitter Saturation Voltage (Note 3) VBE(sat) - 2.5 Vdc (IC = 10 Adc, VCE = 4.0 Vdc) VBE(on) - 1.5 Vdc Base-Emitter On Voltage (Note 3) (IC = 25 Adc, IB = 6.25 Adc) Symbol Max Unit 60 80 - - Vdc - - 2.0 2.0 mAdc - - - - 1.0 1.0 10 10 mAdc - - 1.0 1.0 mAdc - 1.0 mAdc 35 20 4.0 - 100 - - - DC Current Gain (Note 3) (IC = 3.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) (IC = 25 Adc, VCE = 4.0 Vdc) Min VCEO(sus) 1.0 4.0 Vdc hFE ON CHARACTERISTICS Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO Collector-Emitter Sustaining Voltage (Note 3) (IC = 200 mAdc, IB = 0) 2N5883 2N5883, 2N5885 2N5885 2N5884 2N5884, 2N5886 2N5886 Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) 2N5883 2N5883, 2N5885 2N5885 2N5984 2N5984, 2N5886 2N5886 Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) 2N5883 2N5883, 2N5885 2N5885 2N5884 2N5884, 2N5886 2N5886 2N5883 2N5883, 2N5885 2N5885 2N5884 2N5884, 2N5886 2N5886 Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) 2N5883 2N5883, 2N5885 2N5885 2N5884 2N5884, 2N5886 2N5886 ICBO ICEX ICEO Characteristic ELECTRICAL CHARACTERISTICS (Note 2) (TC = 25°C unless otherwise noted) 2N5883 2N5883, 2N5884 2N5884 (PNP) 2N5885 2N5885, 2N5886 2N5886 (NPN) 2N5883 2N5883, 2N5884 2N5884 (PNP) 2N5885 2N5885, 2N5886 2N5886 (NPN) VCC -30 V TURN-ON TIME RL +2.0 V 3.0 10 0 TO SCOPE tr 20 ns RB tr 20 ns 2.0 -11 V 0.7 0.5 10 to 100 ms VCC TURN-OFF TIME RL +9.0 V 10 3.0 TO SCOPE tr 20 ns 0 RB tr 20 ns 10 to 100 ms -30 V t, TIME ( s) DUTY CYCLE 2.0% -11 V TJ = 25°C IC/IB = 10 VCC = 30 V VBE(off) = 2 V 1.0 0.3 tr 0.2 0.1 2N5883 2N5883, 2N5884 2N5884 (PNP) 2N5885 2N5885, 2N5886 2N5886 (NPN) td 0.07 0.05 0.03 VBB +7.0 V 0.02 0.3 DUTY CYCLE 2.0% 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN, REVERSE ALL POLARITIES. 20 30 Figure 3. Turn-On Time Figure 2. Switching Time Equivalent Test Circuits r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.5 D = 0.5 0.2 0.2 0.1 0.1 0.05 0.02 0.02 P(pk) qJC(t) = r(t) qJC qJC = 0.875°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) qJC(t) DUTY CYCLE, D = t1/t2 0.05 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) 20 50 100 200 500 1000 2000 Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMPERES) 100 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C - V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 200°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 200°C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 500 ms 50 1 ms 20 dc 10 5 ms TJ = 200°C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25°C (SINGLE PULSE) CURVES APPLY BELOW RATED VCEO 5.0 2.0 1.0 0.5 0.2 0.1 1.0 2N5883 2N5883, 2N5885 2N5885 2N5884 2N5884, 2N5886 2N5886 2.0 3.0 5.0 7.0 10 20 30 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 5. Active-Region Safe Operating Area http://onsemi.com 3 2N5883 2N5883, 2N5884 2N5884 (PNP) 2N5885 2N5885, 2N5886 2N5886 (NPN) 3000 2N5883 2N5883, 2N5884 2N5884 (PNP) 2N5885 2N5885, 2N5886 2N5886 (NPN) 3.0 ts 2.0 t, TIME ( s) TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 2000 C, CAPACITANCE (pF) 10 7.0 5.0 ts 1.0 0.7 0.5 tf 0.3 Cob Cib 1000 500 tf 0.2 0.1 0.3 0.5 0.7 Cib 700 2N5883 2N5883, 2N5884 2N5884 (PNP) 2N5885 2N5885, 2N5886 2N5886 (NPN) 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 20 300 0.1 30 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) PNP DEVICES 2N5883 2N5883 and 2N5884 2N5884 VCE = 4.0 V hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 1000 700 500 300 25°C -55 °C 100 70 50 30 VCE = 4.0 V TJ = 150°C 300 200 100 70 50 25°C 30 -55 °C 20 20 10 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 10 0.3 20 30 0.5 0.7 2.0 TJ = 25°C 1.6 IC = 2.0 A 5.0 A 10 A 20 A 1.2 0.8 0.4 0 0.01 0.02 0.05 0.1 0.5 0.2 1.0 IB, BASE CURRENT (AMPERES) 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 20 30 Figure 9. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 NPN DEVICES 2N5885 2N5885 and 2N5886 2N5886 TJ = 150°C 200 50 Figure 7. Capacitance Figure 6. Turn-Off Time 1000 700 500 Cob 2.0 5.0 10 2.0 TJ = 25°C 1.6 1.2 IC = 2.0 A 5.0 A 10 A 20 A 0.8 0.4 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 IB, COLLECTOR CURRENT (AMPERES) Figure 10. Collector Saturation Region Figure 11. Collector Saturation Region http://onsemi.com 4 10 2N5883 2N5883, 2N5884 2N5884 (PNP) 2N5885 2N5885, 2N5886 2N5886 (NPN) 2.0 2.0 TJ = 25°C TJ = 25°C 1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.6 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 4 V 0.4 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 4 V 0.4 VCE(sat) @ IC/IB = 10 0 0.3 0.5 0.7 1.0 2.0 3.0 VCE(sat) @ IC/IB = 10 5.0 7.0 10 20 0 30 0.3 IC, COLLECTOR CURRENT (AMPERES) 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) Figure 12. "On" Voltages Figure 13. "On" Voltages ORDERING INFORMATION Device 2N5883 2N5883 2N5883G 2N5883G 2N5884 2N5884 2N5884G 2N5884G Package Shipping TO-204 TO-204 (Pb-Free) TO-204 TO-204 (Pb-Free) 100 Units / Tray 2N5885 2N5885 2N5885G 2N5885G 2N5886 2N5886 2N5886G 2N5886G TO-204 TO-204 (Pb-Free) TO-204 TO-204 (Pb-Free) http://onsemi.com 5 20 30 2N5883 2N5883, 2N5884 2N5884 (PNP) 2N5885 2N5885, 2N5886 2N5886 (NPN) PACKAGE DIMENSIONS TO-204 (TO-3) CASE 1-07 ISSUE Z A N C -T- E D SEATING PLANE K 2 PL 0.13 (0.005) U T Q M M Y M -Y- L V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 2 H G B M T Y 1 -Q- 0.13 (0.005) DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF - 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC - 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF - 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC - 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR M ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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