NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2N5885 | Advanced Semiconductor, Inc. | Silicon Transistor Selection Guide |
5 pages, |
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| 2N5885 | API Electronics, Inc. | 25 Amp Transistors |
1 pages, |
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| 2N5885 | Boca Semiconductor | COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200 |
4 pages, |
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| 2N5885 | Central Semiconductor | Leaded Power Transistor General Purpose |
2 pages, |
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| 2N5885 | Diode Transistor Co., Inc. | Transistor Short Form Data |
1 pages, |
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| 2N5885 | Fairchild Semiconductor | Full Line Condensed Catalogue 1977 |
1 pages, |
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| 2N5885 | General Electric Solid State | High-current, high-power, high-speed power transistor. 60V, 200W. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200 |
4 pages, |
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| 2N5885 | General Transistor Corp. | Power Transistor Selection Guide |
5 pages, |
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| 2N5885 | Mospec Semiconductor | Complementary Silicon High-Power Transistor |
4 pages, |
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| 2N5885 | Mospec Semiconductor | POWER TRANSISTORS(25A,200W) - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200 |
4 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N5885 , 2N5885 80 Collector-Base Voltage V scs .i w 2N5885 VEBO Collector-Emitter Voltage , isc Silicon NPN Power Transistors 2N5885/5886 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) PARAMETER CONDITIONS MIN 2N5885 Collector-Emitter Sustaining , ICBO VCE= 30V; IB= 0 2.0 2N5886 2N5886 VCE= 40V; IB= 0 2.0 w ww 2N5886 2N5886 2N5885 ... | Original |
2 pages, |
2N5886 Vce (sat)40V 2n5885 2N5883/5884 2N5883/5884 abstract |
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| Abstract: SavantIC Semiconductor Product Specification 2N5885 2N5886 2N5886 Silicon NPN Power Transistors , voltage VEBO CONDITIONS 2N5885 Emitter-base voltage 2N5886 2N5886 2N5885 2N5886 2N5886 Open emitter , case VALUE 0.875 UNIT /W SavantIC Semiconductor Product Specification 2N5885 2N5886 2N5886 , (SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS 2N5885 MIN TYP. MAX , ; TC=150 10 mA 1 mA VBEsat ICEV Collector cut-off current (VBE(off)=1.5V) 2N5885 ... | Original |
3 pages, |
2N5884 2N5883 2N5885 2N5886 2N5885 abstract |
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| Abstract: Product Specification www.jmnic.com 2N5885 2N5886 2N5886 Silicon NPN Power Transistors , CONDITIONS 2N5885 VCBO Collector-base voltage VEBO Collector-emitter voltage V 80 2N5885 , case JMnic Product Specification www.jmnic.com 2N5885 2N5886 2N5886 Silicon NPN Power , Collector-emitter sustaining voltage CONDITIONS 2N5885 MIN TYP. MAX UNIT 60 IC=0.2A ;IB=0 , mA 2N5885 2N5886 2N5886 ICEV Collector cut-off current (VBE(off)=1.5V) VCE=30V; IB=0 VCE=40V ... | Original |
3 pages, |
2N5886 2N5884 2N5883 2N5885 2N5883 abstract |
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| Abstract: 2N5883/2N5885 2N5884/2N5886 2N5884/2N5886 COMPLEMENTARY SILICON HIGH POWER TRANSISTORS n 2N5884 2N5884, 2N5885 AND 2N5886 2N5886 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N5885 and 2N5886 2N5886 are silicon , 2N5883 2N5883 2N5884 2N5884 NPN 2N5885 2N5886 2N5886 V CBO Collector-Base Voltage (I E = 0) 60 80 V , For PNP types voltage and current values are negative. October 1995 1/4 2N5883/2N5884/2N5885 , Collector Cut-off Current (I E = 0) I CEO Collector Cut-off Current (I B = 0) for 2N5883/2N5885 ... | Original |
4 pages, |
transistor 2N5884 P003N 2N5886 2N5884 2N5883 2N5885 2N5883/2N5885 2N5884/2N5886 2N5883/2N5885 abstract |
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| Abstract: NPN 2N5883 2N5883 2N5885 2N5884 2N5884 2 N5886 N5886 Characteristic Symbol 2N5883 2N5883 2N5885 2N5884 2N5884 2N5886 2N5886 Unit , 30.40 1 16.64 17.30 J 3.88 4.36 K 10.67 11.18 2N5883 2N5883, 2N5884 2N5884 PNP I 2N5885, 2N5886 2N5886 NPN ELECTRICAL , Collector - Emitter Sustaining Voltage (1) (I- = 200 mA, L = 0 ) 2N5883 2N5883, 2N5885 2N5884 2N5884, 2N5886 2N5886 ^ceo(sus) 60 80 V Collector Cutoff Current ( VCE = 30 V, lB = 0 ) 2N5883 2N5883, 2N5885 ( VCE = 40 V, lB = 0 ) 2N5884 2N5884, 2N5886 2N5886 'ceo 2.0 2.0 mA Collector Cutoff Current (VCE = 60 V, VBS(ofn = 1.5 V ) 2N5883 2N5883, 2N5885 (VCE = 80 ... | OCR Scan |
4 pages, |
2N5886 2N5885 2N5884 2N5883 datasheet abstract |
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| Abstract: of World Class Discrete Semiconductors Datasheet 2N5883 2N5883, 2N5884 2N5884 PNP 2N5885, 2N5886 2N5886 NPN , , 2N5885, 2N5886 2N5886 types are Complementary Silicon Epitaxial Base Transistors designed for power amplifier and switching applications. MAXIMUM RATINGS (Tr = 25°C) 2N5883 2N5883 2N5884 2N5884 SYMBOL 2N5885 2N5886 2N5886 , (Tr = 25°C unless otherwise noted) 2N5883 2N5883 2N5884 2N5884 2N5885 2N5886 2N5886 SYMBOL TEST , ts VCC = 10V, IC = 10A, lB1=lB2 = 1.0A tf VCC = 10V, IC = 10A, lB1=lB2 = 1.0A 2N5883 2N5883 2N5884 2N5884 2N5885 ... | OCR Scan |
2 pages, |
2N5886 2N5885 2N5884 2N5883 117BB 435-1B24 117BB abstract |
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| Abstract: Power Transistors File Number 1041 2N5885, 2N5886 2N5886 High-Current, High Power, High-Speed N-P-N Power , TERMINAL DESIGNATIONS HCS-27S16 HCS-27S16 JEDEC TQ-204AA TQ-204AA The RCA-2N5885 and 2N5886 2N5886 are epitaxial-base, silicon , supplied in the JEDEC TQ-204AA TQ-204AA hermetic steel packages. MAXIMUM RATINGS, Absolute-Maximum Values: 2N5885 , 2N5885, 2N5886 2N5886 ELECTRICAL CHARACTERISTICS, At Case Temperature ITC)=25°C Unless Otherwise Specified TEST CONDITIONS LIMITS CHARACTERISTIC VOLTAGE Vdc CURRENT A dc 2N5885 2N5886 2N5886 UNITS VCE ... | OCR Scan |
4 pages, |
2N5886 2N5885 0D17407 0D17407 abstract |
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| Abstract: 2N5883 2N5883 2N5885 2N5884 2N5884 2N5886 2N5886 Unit Collector-Emitter Voltage VCEO 60 80 Vdc Collector-Base Voltage VCB 60 , Operating and Storage Junction Temperature Range Tj, Tstg -65 to +200 °C PNP 2N5883 2N5883 2N5884 2N5884* NPN 2N5885 , value. REV 7 © Motorola, Inc. 1995 ftf) MOTOROLA 2N5883 2N5883 2N5884 2N5884 2N5885 2N5886 2N5886 'ELECTRICAL , Sustaining Voltage (1) 2N5883 2N5883, 2N5885 (IC = 200 mAdc, lB = 0) 2N5884 2N5884, 2N5886 2N5886 VCEO(sus) 60 80 - Vdc Collector Cutoff Current (VCE = 30 Vdc, lB = 0) 2N5883 2N5883, 2N5885 (Vce = 40 Vdc, Ib = 0) 2N5984 2N5984, 2N5886 2N5886 'CEO - ... | OCR Scan |
6 pages, |
2N5886 2N5885 2N5884 2N5883 MOTOROLA 2N5883 2N5984 2N5885 MOTOROLA 2N5886 MOTOROLA 2N5883/D 2N5883/D abstract |
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| Abstract: , Duty Cycle i? 2.0% (2)V=| hj °ftest 2N5883 2N5883,5884 PNPI 2N5885.2N5886 NPN PNP 2N5883 2N5883.2N5884 2N5884 DC CURRENT , \ 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 I., BASE CURRENT (AMP) NPN 2N5885.2N5886 DC CURRENT GAIN , 2N5883 2N5883, 2N5884 2N5884 PNP I 2N5885, 2N5886 2N5886 NPN ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise , (1) (I- = 200 mA, L = 0 ) 2N5883 2N5883, 2N5885 2N5884 2N5884, 2N5886 2N5886 ^CEO(SUS) 60 80 V Collector Cutoff Current ( VCE = 30 V, lB = 0 ) 2N5883 2N5883, 2N5885 ( VCE = 40 V, lB = 0 ) 2N5884 2N5884, 2N5886 2N5886 'CEO 2.0 2.0 mA Collector ... | OCR Scan |
4 pages, |
S200 40 amp collector current 2N5886 2N5885 2N5884 2N5883 2N5883 abstract |
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| Abstract: TO-204 (Pb-Free) TO-204 TO-204 (Pb-Free) 100 Units / Tray 2N5885 2N5885G 2N5886 2N5886 2N5886G 2N5886G , 2N5883 2N5883, 2N5884 2N5884 (PNP) 2N5885, 2N5886 2N5886 (NPN) 2N5884 2N5884 and 2N5886 2N5886 are Preferred Devices , 2N5883 2N5883, 2N5885 2N5884 2N5884, 2N5886 2N5886 VCEO Collector-Base Voltage Value Unit Vdc 60 80 VCB 2N5883 2N5883, 2N5885 2N5884 2N5884, 2N5886 2N5886 Emitter-Base Voltage MARKING DIAGRAM Vdc 60 80 VEB 5.0 , = 0, f = 1.0 MHz) 2N5883 2N5883, 2N5884 2N5884 2N5885, 2N5886 2N5886 Current-Gain - Bandwidth Product (Note 4 ... | Original |
4 pages, |
to 204 2N5883G 2N5884G 2N5885 2N5885G 2N5886 2N5984 2N5883 2N5884 2N5886G 2N5883 abstract |
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| Abstract: Solidev Semiconductors Silicon Power Transistors Silicon NPN Power Transistors-20 Amp REFERENCE TABLE Code Stock No. 2N5885 2N5886 2N5886 35069B 35069B 3S470E 3S470E ABSOLUTE MAXIMUM RATINGS 2 N 5885 2 N 5886 BVC80 BVC80 (V) 60 80 BVceo(V) 60 80 BVebo (V) S 5 lc max (A) 20 20 Ptot (W) 200 200 PHYSICAL DIMENSIONS ELECTRICAL CHARACTERISTICS AT 25'C AMBIENT Symbol Conditions 2N5885 Min Typ Max 2N5886 2N5886 Min. Typ Max Units 1 c ex Vce=60V Veb=1.5V Vce=80V Veb=1.5V 1.0 1.0 mA mA 1 cbo Vcb-60V Vca=80V 1.0 1.0 mA. ... | OCR Scan |
1 pages, |
2N5886 2N5885 35069B 3S470E 2N5885 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| element component template q2n5885 c b e #* # Model Generated by MODPEX * #Copyright(c) Symmetry Design Systems* # All Rights Reserved .i-t.com * #* # MODPEX model for BJT transistor q2n5885 # Model generated on Jan 24, 2004 electrical c,b,e { # BODY_BEGIN # Model format: Saber spq.model qqq2n5885=(type=_n, is=2.13575e-10,bf=117.437,nf=0.85,vaf=21.6171, ikf ) spq.q c b e e=model=qqq2n5885 } www.datasheetarchive.com/files/on_semiconductor/simulation-models/2n5885.sin |
On Semiconductor | 30/03/2009 | 1.12 Kb | SIN | 2n5885.sin |
| No abstract text available www.datasheetarchive.com/download/19376678-672870ZC/2n5885.jpg |
User Photos | 23/05/2012 | 12.24 Kb | JPG | 2n5885.jpg |
| * * Model Generated by MODPEX * *Copyright(c) Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE * * Contains Proprietary Information * * Which is The Property of * * SYMMETRY OR ITS LICENSORS * * Modeling services provided by * * Interface Technologies www.i-t.com * * .MODEL Q2n5885 npn +IS=2.13575e-10 BF=117.437 NF=0.85 VAF=21.6171 +IKF=7.94924 ISE=3.96117e-12 NE=3 www.datasheetarchive.com/files/on_semiconductor/simulation-models/2n5885.sp2 |
On Semiconductor | 30/03/2009 | 0.96 Kb | SP2 | 2n5885.sp2 |
| * * Model Generated by MODPEX * *Copyright(c) Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE * * Contains Proprietary Information * * Which is The Property of * * SYMMETRY OR ITS LICENSORS * * Modeling services provided by * * Interface Technologies www.i-t.com * * .MODEL 2n5885 npn +IS=2.13575e-10 BF=117.437 NF=0.85 VAF=21.6171 +IKF=7.94924 ISE=3.96117e-12 NE=3 www.datasheetarchive.com/files/on_semiconductor/simulation-models/2n5885.sp3 |
On Semiconductor | 30/03/2009 | 0.95 Kb | SP3 | 2n5885.sp3 |
| * * Model Generated by MODPEX * *Copyright(c) Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE * * Contains Proprietary Information * * Which is The Property of * * SYMMETRY OR ITS LICENSORS * * Modeling services provided by * * Interface Technologies www.i-t.com * * .MODEL Q2n5885 npn +IS=2.13575e-10 BF=117.437 NF=0.85 VAF=21.6171 +IKF=7.94924 ISE=3.96117e-12 NE=3 www.datasheetarchive.com/files/on_semiconductor/simulation-models/2n5885.lib |
On Semiconductor | 30/03/2009 | 0.96 Kb | LIB | 2n5885.lib |
| 2N5885 (#23490) NPN Transistor Division PPC Inc. Datasheet (none) Mil-Spec (none) Prod-Class (none) Shipping (none) Qual Data (none) Absolute Maximum Ratings Symbol Max Unit Power Dissipation www.datasheetarchive.com/files/microsemi/products/23490-v1.htm |
Microsemi | 08/12/1999 | 8.46 Kb | HTM | 23490-v1.htm |
| Search Criteria: PartType = NPN Transistor, VCE(sat) @ IC = 25 mAmps Part No Type Package Power (Watts) IC (Amps) BVCBO (Volts) Vceo (Volts) Vebo (Volts) 2N5885 PPC NPN TO-3 STD 200 25 60 60 5 2N5886 2N5886 2N5886 2N5886 PPC NPN TO-3 STD 200 25 80 80 5 2N2779 2N2779 2N2779 2N2779 PPC NPN TO-63 STD 200 30 250 250 15 2N2780 2N2780 2N2780 2N2780 PPC NPN TO-63 STD 200 30 300 300 15 2N5685 2N5685 2N5685 2N5685 PPC NPN TO-3 STD 300 50 60 www.datasheetarchive.com/files/microsemi/products/npn/206_25.htm |
Microsemi | 04/01/1999 | 5.01 Kb | HTM | 206_25.htm |
| Search Criteria: PartType = NPN Transistor, HFE @ Ic Test = 25 mAmps Part No Type Package Power (Watts) IC (Amps) BVCBO (Volts) Vceo (Volts) Vebo (Volts) 2N5885 PPC NPN TO-3 STD 200 25 60 60 5 2N5886 2N5886 2N5886 2N5886 PPC NPN TO-3 STD 200 25 80 80 5 2N2779 2N2779 2N2779 2N2779 PPC NPN TO-63 STD 200 30 250 250 15 2N2780 2N2780 2N2780 2N2780 PPC NPN TO-63 STD 200 30 300 300 15 2N5685 2N5685 2N5685 2N5685 PPC NPN TO-3 STD 300 50 60 www.datasheetarchive.com/files/microsemi/products/npn/205_25.htm |
Microsemi | 04/01/1999 | 5.01 Kb | HTM | 205_25.htm |
| 2N5885 PartID: 23490 | Rev: 1/4/99 PPC Inc. Part Type: NPN Transistor Package: TO-3 (STD-Thru Hole) 200 Watts 25 Amps Maximum Ratings and Electrical www.datasheetarchive.com/files/microsemi/products/23490.htm |
Microsemi | 04/01/1999 | 5.71 Kb | HTM | 23490.htm |
| Search Criteria: PartType = NPN Transistor, VCE(sat) @ IC = 25 mAmps Part No Type Package Power (Watts) IC (Amps) BVCBO (Volts) Vceo (Volts) Vebo (Volts) 2N5885 PPC NPN TO-3 STD 200 25 60 60 5 2N5886 2N5886 2N5886 2N5886 PPC NPN TO-3 STD 200 25 80 80 5 2N2779 2N2779 2N2779 2N2779 PPC NPN TO-63 STD 200 30 250 250 15 2N2780 2N2780 2N2780 2N2780 PPC NPN TO-63 STD 200 30 300 300 15 2N5685 2N5685 2N5685 2N5685 PPC NPN TO-3 STD 300 50 60 www.datasheetarchive.com/files/microsemi/products/bat/npn/206_25.htm |
Microsemi | 04/01/1999 | 5.01 Kb | HTM | 206_25.htm |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 2N5885 | N/A | Silicon NPN | |
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| 2N5885 | N/A | RHG | |
| NTE Electronics Part | Industry Part |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| 2N5885 Buy | 2N5886 Buy | STMicroelectronics | Direct |
| 2N5885G Buy | 1561-0608 Buy | Boca Semiconductor | Close |
| 2N5885G Buy | 1561-0610 Buy | Boca Semiconductor | Close |
| 2N5885G Buy | 1561-0615 Buy | Boca Semiconductor | Close |
| 2N5885G Buy | 1561A608 Buy | Powerex | Close |
| 2N5885G Buy | 1561A615 Buy | Powerex | Close |
| 2N5885G Buy | 1582-0608 Buy | Powertech | Close |
| 2N5885G Buy | 1582-0615 Buy | Powertech | Close |
| 2N5885G Buy | 1743-0610 Buy | American Microsemiconductor | Close |
| 2N5885G Buy | 1743-0630 Buy | American Microsemiconductor | Close |
| STMicroelectronics Part | Industry Part | Manufacturer | Type | Description |
| 2N5886 Buy | 2N5885 Buy | On Semiconductor | Replacement | Power Bipolar - Low Voltage ( < 160 V) General Purpose |
| Part | Similar Part | Notes |
| 2N5885 Buy | 2N2109 Buy | |
| 2N5885 Buy | 2N5685 Buy | |
| 2N5885 Buy | 2N6274 Buy | |
| 2N5885 Buy | 2N6338 Buy | |
| 2N5885 Buy | 2N6339 Buy | |
| 2N5885 Buy | 2N6340 Buy | |
| 2N5885 Buy | 2N6341 Buy | |
| 2N5885 Buy | 3DK209B Buy | |
| 2N5885 Buy | BD317 Buy | |
| 2N5885 Buy | BD364 Buy |