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Part : 2N5882 Supplier : NTE Electronics Manufacturer : Newark element14 Stock : 59 Best Price : $3.00 Price Each : $3.73
Part : 2N5882 Supplier : Motorola Manufacturer : basicEparts Stock : 48 Best Price : - Price Each : -
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2N5882 Datasheet

Part Manufacturer Description PDF Type
2N5882 On Semiconductor Silicon NPN High Power Transistor Original
2N5882 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N5882 API Electronics 15 AMPS / 20 AMPS NPN Transistors Scan
2N5882 API Electronics Short form transistor data Scan
2N5882 API Electronics Short form transistor data Scan
2N5882 Boca Semiconductor COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS Scan
2N5882 Central Semiconductor Complementary Silicon Power Transistors, TO-3 Scan
2N5882 Diode Transistor Transistor Short Form Data Scan
2N5882 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N5882 General Transistor Power Transistor Selection Guide Scan
2N5882 Mospec POWER TRANSISTORS(15A,160W) Scan
2N5882 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2N5882 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N5882 N/A Basic Transistor and Cross Reference Specification Scan
2N5882 N/A Transistor Shortform Datasheet & Cross References Scan
2N5882 N/A Shortform Transistor PDF Datasheet Scan
2N5882 N/A Shortform Transistor PDF Datasheet Scan
2N5882 N/A Transistor Replacements Scan
2N5882 N/A Transistor Replacements Scan
2N5882 N/A Cross Reference Datasheet Scan
Showing first 20 results.

2N5882

Catalog Datasheet MFG & Type PDF Document Tags

2N5881

Abstract: 2N5882 Inchange Semiconductor Product Specification 2N5881 2N5882 Silicon NPN Power Transistors , 2N5882 ANG INCH 2N5881 VCEO Collector-emitter voltage Emitter-base voltage Open collector UNIT 60 V 80 60 Open base 2N5882 VEBO OND EMIC ES Collector-base , Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5881 2N5882 , Collector-emitter sustaining voltage MIN TYP. MAX UNIT 60 IC=0.2A ;IB=0 2N5882 V 80
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Original
2N5879 2N5880

2N5882

Abstract: 2N5881 SavantIC Semiconductor Product Specification 2N5881 2N5882 Silicon NPN Power Transistors , 60 V Open base 80 2N5882 VEBO V 80 2N5881 Collector-emitter voltage Emitter-base voltage UNIT 60 Open emitter 2N5882 VCEO VALUE Open collector 5 V IC , 2N5882 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL , . MAX UNIT 60 V IC=0.2A ;IB=0 80 2N5882 VCEsat-1 Collector-emitter saturation
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Original

2NS880

Abstract: 2N6878 Voltage - VCEO(sus) - 60 Vdc (Min) - 2N5879,2N5881 = 80 Vdc (Min) - 2N5880,2N5882 · DC Current Gain - , Bipolar Power Transistor Device Data 3-77 2N5879 2N5880 2N5881 2N5882 'ELECTRICAL CHARACTERISTICS , 2N5880,2N5882 2N5879,2N5881 2N5880,2N5882 v CEO(SUS) 'CEO 60 80 - - 1.0 1.0 Vdc mAdc _ , ,2N5882 2N5879,2N5881 2N5880, 2N5882 2N5879, 2N5881 2N5880,2N5882 'CBO _ _ _ - mAdc 0.5 0.5 5.0 , 2N5881, 2N5882 C0b hfe tr *s if - - 4.0 100 Vde 1.0 4.0 2.5 1.5 - 600 400 - 0.7 1.0 0.8 Vdc Vdc
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OCR Scan
2N6878 2NS880 2n5879 power amplifier circuit 2N5880 motorola 2N5B82 2N58B2

2N5882

Abstract: N5 npn transistor 80 Vdc (Min) - 2N5880, 2N5882 DC Current Gain - hpE = 20 (Min) @ Iq = 6.0 Adc Low Collector - , Temperature Range Symbol VCEO VCB Veb 2N5879 2N5881 60 60 5.0 15 30 5.0 160 0.915 2N5880 2N5882 80 , 2N5879 2N5880 2N5881 2N5882 ` ELECTRICAL CHARACTERISTICS (T q = 25°C unless otherwise noted , 2N5882 2N5881 2N5882 ICBO 2N5879, 2N5881 2N5880, 2N5882 lEBO 2N5879, 2N5881 2N5880, 2N5882 2N5879, 2N5881 2N5880, 2N5882 'CEX - - 0.5 0.5 5.0 5.0 mAdc v CEO(sus) 'CEO 60 80 - - Vdc mAdc Symbol Min
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OCR Scan
N5 npn transistor 2N5879/D

2N5881

Abstract: 2N5882 Product Specification www.jmnic.com 2N5881 2N5882 Silicon NPN Power Transistors , Collector-emitter voltage V 80 2N5881 60 Open base 2N5882 Emitter-base voltage UNIT 60 Open emitter 2N5882 VCEO VALUE V 80 Open collector 5 V IC Collector current 15 , resistance junction to case JMnic Product Specification www.jmnic.com 2N5881 2N5882 Silicon , IC=0.2A ;IB=0 2N5882 V 80 VCEsat-1 Collector-emitter saturation voltage IC=7A;IB
JMnic
Original

2N5879

Abstract: 2N5880 2N5880* Complementary Silicon High-Power Transistors NPN 2N5881 2N5882* . . . designed for , ) = 60 Vdc (Min) - 2N5879, 2N5881 VCEO(sus) = 80 Vdc (Min) - 2N5880, 2N5882 · DC Current Gain - , 60 VCEO VCB Collector­Base Voltage 2N5880 2N5882 60 Symbol Adc 5.0 Watts W , , 2N5880 (PNP) 2N5881, 2N5882 (NPN) 0.07 0.05 0.2 0.3 0.7 0.5 SCOPE 5.0 2.0 VCC ­ 30 V , 0, f = 100 kHz) 2N5881, 2N5882 Small­Signal Current Gain (IC = 2.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz
Motorola
Original
2n5879 pin out NPN bipolar junction transistors max hfe 2000 2N5879 MOTOROLA 2n5882 motorola 1N5825 MSD6100

NPN power transistor 15A amperes

Abstract: 2N5880 2N5880 & 2N5882 Complementary Power Transistors General-purpose power amplifier and switching , 4.36 K 10.67 PNP NPN 2N5880 2N5882 11.18 Pin 1. Base 2. Emitter Collector(Case , /05 V1.0 2N5880 & 2N5882 Complementary Power Transistors PD, Power Dissipation (Watts) Figure , ftest Page 2 31/05/05 V1.0 2N5880 & 2N5882 Complementary Power Transistors NPN 2N5882 DC , /05 V1.0 2N5880 & 2N5882 Complementary Power Transistors Active-Region Safe Operating Area (SOA
Multicomp
Original
NPN power transistor 15A amperes AMP UK 45 COMPLEMENTARY SILICON POWER TRANSISTORS

2N5880

Abstract: 2N5882 100 125 Tc, TEMPERATURE( °C) 150 175 200 PNP NPN 2N5879 2N5881 2N5880 2N5882 Characteristic Symbol 2N5879 2N5881 2N5880 2N5882 Unit Collector-Emitter Voltage VCEo 60 80 V Collector-Base Voltage , , 2N5880 PNP I 2N5881, 2N5882 NPN ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted , mA, L = 0 ) 2N5879, 2N5881 2N5880, 2N5882 ^CEO(SUS) 60 80 V Collector Cutoff Current (VCE = 30 V, lB = 0 ) 2N5879, 2N5881 (Vcs = 40 V, lB = 0 ) 2N5880, 2N5882 'ceo 1.0 1.0 mA Collector Cutoff
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OCR Scan
Scans-00155740 15AMPERE

2N5881

Abstract: 2NS882 2N5882 8368602 SOLITRON D EVICES t' « . v * INC UPU SILICON POWER TRANSISTORS HIGH POWER 15 , 2N5882 80V 80V 5.0V 15A 30A 5.0A - - COLLECTOR-EMITTER VOLTAGE COLLECTOR-BASE VOLTAGE j , ~ 3 '5 ~ l5 ^ 2N5881 2N5882 ELECTRICAL CHARACTERISTICS (T c= 2 5 °C UNLESS OTHERWISE NOTED) CHARACTERISTICS CoUecior-Emittw Sustaining Voltage (IC-200m A)*lB~ 0 2N5881 2N5882 SYMBOL VcEo(tU M ) MIN , ~0 2N5882 2N5881 2N5882 ¡CEO 1.0 1.0 > mA mA 1CEX 500 500 5.0 5.0 uA uA mA mA IcBO
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OCR Scan
2NS882 IC-200 2NS881 100KHZ

2N5880

Abstract: 2N5882 2N5879, 2N5880 PNP I 2N5881, 2N5882 NPN ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise , Voltage (1) (lc = 200 mA, L = 0 ) 2N5879, 2N5881 2N5880, 2N5882 ^CEO(SUS) 60 80 V Collector Cutoff Current (VCE = 30 V, lB = 0 ) 2N5879, 2N5881 (Vcs = 40 V, lB = 0 ) 2N5880, 2N5882 'ceo 1.0 1.0 mA , , 2N5882 (VCE = 60 V, VBB(oW = 1.5 V, Tc = 150°C ) 2N5879, 2N5881 (VCE = 80 V, VBE(0(n = 1.5 V, Tc = 150°C ) 2N5880, 2N5882 'cEX 0.5 0.5 5.0 5.0 mA Collector Cutoff Current (VCB = 60 V, lE = 0 ) 2N5879, 2N5881
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OCR Scan
S200 TRANSISTOR TC 100

2N5882

Abstract: 2N5882-D ON Semiconductort Silicon NPN High-Power Transistor 2N5882 ON Semiconductor Preferred , , 2001 ­ Rev. 2 1 Publication Order Number: 2N5882/D 2N5882 ÎÎÎ Î Î Î Î Î , TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N5882 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 D = 0.5 , ) hFE , DC CURRENT GAIN 1000 700 500 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2N5882 0.5 , ://onsemi.com 4 10 20 2N5882 PACKAGE DIMENSIONS CASE 1­07 TO­204AA (TO­3) ISSUE Z A N C ­T­
ON Semiconductor
Original
2N5882-D 2N5882/D

MJE34 equivalent

Abstract: BU108 Voltage - VCEO(sus) = 60 Vdc (Min) - 2N5879, 2N5881 VCEO(sus) = 80 Vdc (Min) - 2N5880, 2N5882 · DC , Adc MAXIMUM RATlNGS (1) Rating 2N5879 2N5880* 2N5881 2N5882* *Motorola Preferred Device PNP , ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ Symbol VCEO VCB VEB IC IB PD 2N5879 2N5881 60 60 2N5880 2N5882 80 80 Unit Vdc , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v v 2N5879 2N5880 2N5881 2N5882 , , 2N5881 2N5880, 2N5882 2N5879, 2N5881 2N5880, 2N5882 VCEO(sus) ICEO mAdc 1.0 1.0 0.5 0.5 5.0 5.0 0.5 0.5
Motorola
Original
MJE34 equivalent BU108 2SB56 BC 107 npn transistor pin configuration BDX54 BU100 MJ15012 MJE15030 2N6339 2N6341 2N6497 MJ15011
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5882/D Silicon NPN , ) Collector­Emitter Voltage Collector­Base Voltage Emitter­Base Voltage 2N5882 Motorola Preferred Device 15 , ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v v 2N5882 *ELECTRICAL , 2N5882 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 , Time Figure 7. Capacitance Motorola Bipolar Power Transistor Device Data 3 2N5882 VCE Motorola
Original

2NS882

Abstract: 2n5882 motorola Vdc Vdc Vdc Ade Ade Watts W/°C °C 2N5882 Motorola Preferred Device 15 AMPERE SILICON POWER , ) Motorola, Inc. 1998 2N5882 ` ELECTRICAL CHARACTERISTICS O c = 25°C unless otherwise noted , Motorola Bipolar Power Transistor Device Data 2N5882 6j c W = rW 9X 0jC = 1.1°C/WMAX D CURVES APPLY , Transistor Device Data 2N5882 PACKAGE DIMENSIONS t - N - j * u D 2PL I I i C ,i I_ 1 K , Transistor Device Data 5 2N5882 Motorola reserves the right to make changes without further notice
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OCR Scan
2M5882/D

2SA1046

Abstract: 2SC1030 /20k 80 90 120 2N5882 2N6577 (2) 2N5880 MJ15015 2N6578 (2) MJ15016 20/70 2k/20k
Motorola
Original
2SA1046 2SC1030 BD417 BD415 BD295 2SC2080 2N6057 2N6059 2N6050 2N6111 2N6288 2N6109

equivalent to tip162

Abstract: 2SA1046 (2) MJ2955 MJ2955A 15 60 2N5879 20/100 20/100 2k/20k 80 90 120 2N5882 2N6577 (2
Motorola
Original
equivalent to tip162 2N3055 2n6258 2sd314 bd876 buv23 2N6338 2N6340 2N6436 BU208A MJE16106 MJ16012

2SA1046

Abstract: BU108 /20k 80 90 120 2N5882 2N6577 (2) 2N5880 MJ15015 2N6578 (2) MJ15016 20/70 2k/20k
Motorola
Original
2sb688 y 2n5632 BU326 BD262 2N6498 MJ10009 TIP101 TIP102 TIP106 TIP107

mje15033 replacement

Abstract: BD262 DARLINGTON MJ2955A 15 60 2N5879 20/100 20/100 2k/20k 80 90 120 2N5882 2N6577 (2) 2N5880
Motorola
Original
mje15033 replacement BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 BD262A DARLINGTON 2N6576 TIP31C TIP32C TIP120 TIP121 TIP122

BU108

Abstract: MJ3055 to220 MJ2955A 15 60 2N5879 20/100 20/100 2k/20k 80 90 120 2N5882 2N6577 (2) 2N5880
Motorola
Original
MJ3055 to220 2N6277 2SC1943 transistor Bc 574 2n6107 MOTOROLA 2SC1419 BUV21 TIP125 TIP126 TIP127 TIP73B TIP74

D45H11 equivalent replacement

Abstract: 2N5036 equivalent (2) MJ2955 MJ2955A 15 60 2N5879 20/100 20/100 2k/20k 80 90 120 2N5882 2N6577 (2
Motorola
Original
D45H11 equivalent replacement 2N5036 equivalent BDW93C equivalent MJ10016 2SD218 equivalent BD140 circuits TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C

BU108

Abstract: 2N3055 /20k 80 90 120 2N5882 2N6577 (2) 2N5880 MJ15015 2N6578 (2) MJ15016 20/70 2k/20k
Motorola
Original
BDV64 AN415A MJE2955T ST 2n3055 audio amplifier application note mje13005 MJE2955T MJE3055T 220AB 2N6488 2N6490 2N6491

2N3055 plastic

Abstract: BUT11Af equivalent MJ2955A 15 60 2N5879 20/100 20/100 2k/20k 80 90 120 2N5882 2N6577 (2) 2N5880
Motorola
Original
2N3055 plastic BUT11Af equivalent bdx54d 2SC140 BUX98A NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 BUT11AF TIPL752 TIPL752A TIPL753 TIPL753A TIPL755

BU108

Abstract: ir411 /20k 80 90 120 2N5882 2N6577 (2) 2N5880 MJ15015 2N6578 (2) MJ15016 20/70 2k/20k
Motorola
Original
ir411 2SD675 transistor BC 247 2sc101 BUV22 equivalent MJE2482 BUV22 TIPL755A TIPL760 TIPL760A MJ16110 MJ16010

transistor mj11032 equivalent

Abstract: transistor mj11028 equivalent MJ2955A 15 60 2N5879 20/100 20/100 2k/20k 80 90 120 2N5882 2N6577 (2) 2N5880
Motorola
Original
transistor mj11032 equivalent transistor mj11028 equivalent MJ11032 equivalent transistor MJ11032 MJ11030 equivalent 2sd717 MJ11028 MJ11029 MJ11030 MJ11031 MJ11032 MJ11033

MJE340-MJE350

Abstract: 2SD71 /20k 80 90 120 2N5882 2N6577 (2) 2N5880 MJ15015 2N6578 (2) MJ15016 20/70 2k/20k
Motorola
Original
MJE340-MJE350 2SD71 2sc106 BD139.10 BD139.16 BD139.6 MC3419 MJE270 MJE271 225AA MJE16002

2SC1419

Abstract: sec tip41c MJ2955A 15 60 2N5879 20/100 20/100 2k/20k 80 90 120 2N5882 2N6577 (2) 2N5880
Motorola
Original
sec tip41c MJE493 BDW83 buv98a cross reference 2n3055 audio output circuit 2sc3281 MJL3281A MJL1302A

2N3055 TO220

Abstract: BD130 MJ2955A 15 60 2N5879 20/100 20/100 2k/20k 80 90 120 2N5882 2N6577 (2) 2N5880
Motorola
Original
2N3055 TO220 BD130 NPN Transistor BD241 3221 3900 MJE350 equivalent bipolar transistor td tr ts tf TIP29B TIP30B TIP29C TIP30C
Showing first 20 results.