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Part : 2N5745JANTX Supplier : COBHAM Manufacturer : Avnet Stock : - Best Price : $72.6747 Price Each : $79.3684
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Part : RG2012N-5761-D-T5 Supplier : Susumu Manufacturer : Future Electronics Stock : - Best Price : $0.0920 Price Each : $0.0920
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Part : 2N5770 Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 1,942 Best Price : $0.06 Price Each : $0.07
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Part : 2N575 Supplier : Solitron Devices Manufacturer : Bristol Electronics Stock : 13 Best Price : $5.60 Price Each : $11.20
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Part : JANTX2N5794 Supplier : Microsemi Manufacturer : Chip1Stop Stock : 6 Best Price : $241.25 Price Each : $241.25
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Part : JANTXV2N5794U Supplier : Microsemi Manufacturer : Chip1Stop Stock : 34 Best Price : $434.8300 Price Each : $434.8300
Part : JANTXV2N5796U Supplier : Microsemi Manufacturer : Chip1Stop Stock : 23 Best Price : $287.9600 Price Each : $287.9600
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2N5777 Datasheet

Part Manufacturer Description PDF Type
2N5777 Advanced Semiconductor Silicon NPN photo detector for general purpose industrial photo detector applications Scan
2N5777 General Electric Semiconductor Data Handbook 1977 Scan
2N5777 Motorola The European Selection Data Book 1976 Scan
2N5777 N/A Basic Transistor and Cross Reference Specification Scan
2N5777 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N5777 N/A Semiconductor Master Cross Reference Guide Scan
2N5777MOD Advanced Semiconductor SILICON NPN PHOTO DETECTOR Scan

2N5777

Catalog Datasheet MFG & Type PDF Document Tags

photo transistor 2n5777

Abstract: L14F1 npn photo transistor Planar Silicon Photo-Darlington Amplifier 2N5777-80 This General Electric Light Sensor Series is an , . 2N5777-80 Typ. Max. Switching Speeds (Vce = 10V, II = 10mA, Rl = 100 ohms, GaAs LED source) Delay Time , DIMENSIONS IN INCHES B C E PELLET LOCATION TYPICAL ELECTRICAL CHARACTERISTICS 2N5777.80 mw , V IK ' - y i 46 1 f \ m 2N5777-80 1° 1 L t , .4 l14h4 1339 .05 - 30 30 100 5 5 .4 PHOTO DARLINGTONS 2n5777 50* .25 _ 25 25 100 75 50
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OCR Scan
photo transistor 2n5777 L14F1 npn photo transistor 2n5777 l14f1 h11 bulb 2 leads photo transistor 2n5777 2N5778 LED55C LED55B LED56 LED55CF LED55BF LED56F

2N5777

Abstract: 2N5777-80 Light Detector Planar Silicon Photo-Darlington Amplifier 2N5777-80 This General Electric , . 2N5777-80 Typ. Max. Switching Speeds (Vce = 10V, II = 10mA, Rl = 100 ohms, GaAs LED source) Delay Time , DIMENSIONS IN INCHES B C E PELLET LOCATION TYPICAL ELECTRICAL CHARACTERISTICS 2N5777.80 mw , V IK ' - y i 46 1 f \ m 2N5777-80 1° 1 L t , ) (unless otherwise specified) Voltagesâ'"Dark Characteristics 2N5777, 79 (L14D1.3) 2N5778. 80 (L14D2
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OCR Scan
2N 5777 ft 5777 I461 2N577 L14D2 and 2n5777 T0-92

2N5777

Abstract: CM2150 2N5777(MOD.) SILICON NPN PHOTO DETECTOR DESCRIPTION: The 2N5777(MOD.) is Designed for General Purpose Industrial Photo Detector Applications. FEATURES: â'¢ High Sensitivity â'¢ Economical TO-92 compatible package MAXIMUM RATINGS II 250 mA VceO 40 V Pdiss 250 mW @ Tc = 25 °C Tj -40 to+100 °C Tst -40 to+100 °C PACKAGE STYLE TO-92(V1) c - -«m m râ'"H DM MLUMETERS m KS um IMI MAX UHI RH1 MAX A 3.43 4.60 0.135 0.185 B 2.79 3.30 0.110 0.130 C 2.03 3.18 0.080 0.125 D 0.43 0.60 0.017
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OCR Scan
CM2150

2N5777

Abstract: 2N5777(MOD.) SILICON NPN PHOTO DETECTOR DESCRIPTION: The 2N5777(MOD.) is Designed for General Purpose Industrial Photo Detector Applications. PACKAGE STYLE TO-92{V1) MILLIMETERS m il M AX mm 3.43 2.79 2.03 0.43 4.60 3.30 3.18 INCHES mu M AX Min 0.135 0.110 0.080 0.017 0.185 0.130 0.125 0.024 FEATURES: · High Sensitivity · Economical TO-92 compatible package DIM A B C D F G H J K N Q R 0.60 1.40 1.14 2.54 BSC 1.52 BSC 0.56 19.05 3.30 1.52 4.60 MAXIMUM RATINGS Il V CEO "5O mA 'O V "5O
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OCR Scan

2N5779

Abstract: 2N5780 Ì4 D E ¡| k 3 L,7 2 5 5 DD3Û 171 7 ;|~ 6367255 MOTOROLA SC ( D I O D E S / OPTO) 34C 38 17.1 SILICON OPTOELECTRONIC DICE (continued) T-41-47 DIE NO. LINE SOURCE - DOL145 MRDC8 T h is d ie provides p erfo rm a n c e e q u a l to o r b etter than that o f th e follow ing d ev ic e types: 2N5777 2N5778 2N5779 2N5780 MRD360 MRD370 MRD1413 D e s ig n e d for Photo darlin gton D e te c to r app lication s. METALLIZATION - Top
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OCR Scan
2n5779 motorola

2N5779

Abstract: L14H4 .4 l14h4 1339 .05 - 30 30 100 5 5 .4 photo darlingtons 2n5777 50* .25 _ 25 25 100 75 50
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OCR Scan
L14H4 L14f1 photo transistor H15A1 opto 4n25 photo transistor L14F1 4n35 1327 H74A1 500VDC

MRD14B

Abstract: 2N5779 2N5778 2N5777 MRD14B 8.0 8.0 4.0 4.0 2.0 2.0 2.0 2.0 2.0 2.0 40 25 40 25 12 100 100 100 100 100
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OCR Scan
MRD3054 MRD3056 MBD3055 MRD3051 MLED930 photodarlingtons D3050

photo transistor L14F

Abstract: photo transistor 2n5777 L14B4 2.0 â'" 6.0 â'" 75 45 40 Plastic TO-98 262 55.46 L14D1 2N5777 0.5 â'" 1.5 â'" 75 45 25 Plastic
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OCR Scan
L14B1 L14B2 L14B3 L14D3 L14E2 L14A502 photo transistor L14F L1402 L14F L14f photo transistor L14D4 L14E1

MRD14B

Abstract: 2N5777 OPERATION FIGURE 3 - MRA363B (BRIDGE CIRCUIT) CASE 157 MRD14B (silicon) For Specifications, See 2N5777
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OCR Scan
MRA363 rectifier diode assembly rectifier diode common anode MRA363R MRA36

PHOTO DIODE LED55C

Abstract: ssl55c .4 l14h4 1339 .05 - 30 30 100 5 5 .4 photo darlingtons 2n5777 50* .25 _ 25 25 100 75 50
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OCR Scan
PHOTO DIODE LED55C ssl55c ssl55b SSL55CF SSL56 OF LED 55B LED55B-LED55BF LED55C-LED55CF

L14F1 phototransistor

Abstract: L14F1 npn photo transistor .4 l14h4 1339 .05 - 30 30 100 5 5 .4 photo darlingtons 2n5777 50* .25 _ 25 25 100 75 50
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OCR Scan
H11A3 H11A4 L14F1 phototransistor T1 L14F1 TRANSISTOR 2n5777 phototransistor 340 opto isolator H11A2

ssl55c

Abstract: photo transistor 2n5777 .4 l14h4 1339 .05 - 30 30 100 5 5 .4 photo darlingtons 2n5777 50* .25 _ 25 25 100 75 50
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OCR Scan
L14F1 H11A5 H11A520 transistor l14f1

L14F1 PHOTOTRANSISTOR

Abstract: 2n5777 phototransistor .4 l14h4 1339 .05 - 30 30 100 5 5 .4 photo darlingtons 2n5777 50* .25 _ 25 25 100 75 50
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OCR Scan
Phototransistor L14F1 H11A1-H11A2 4n26 opto isolator L14H2 L14G3 phototransistor opto isolator IC H11A1

L14H2

Abstract: L14H1 .4 l14h4 1339 .05 - 30 30 100 5 5 .4 PHOTO DARLINGTONS 2n5777 50* .25 _ 25 25 100 75 50
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OCR Scan
L14H1 AA 4N35 HA 1329

H15A1

Abstract: H15A1 opto .4 l14h4 1339 .05 - 30 30 100 5 5 .4 photo darlingtons 2n5777 50* .25 _ 25 25 100 75 50
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OCR Scan
H15A1 opto h15a2 ge H15A1 opto h15a2 L14F2 H15A2 500VD H15A1-H15A2

Phototransistor L14G3 application

Abstract: L14F1 npn photo transistor .4 l14h4 1339 .05 - 30 30 100 5 5 .4 photo darlingtons 2n5777 50* .25 _ 25 25 100 75 50
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OCR Scan
Phototransistor L14G3 application L14G2 application note circuit using l14f1 H11A51 H11A550 H11A5100

L14F1 npn photo transistor

Abstract: transistor l14f1 .4 l14h4 1339 .05 - 30 30 100 5 5 .4 PHOTO DARLINGTONS 2n5777 50* .25 _ 25 25 100 75 50
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OCR Scan
L14F1-L14F2 2N5777 equivalent ge L14F1 of transistor L14F1 OF PHOTO TRANSISTOR L14F1 L14F2 photo transistor

2n5777 phototransistor

Abstract: L14F1 PHOTOTRANSISTOR .4 l14h4 1339 .05 - 30 30 100 5 5 .4 photo darlingtons 2n5777 50* .25 _ 25 25 100 75 50
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OCR Scan
Phototransistor L14G2

opto isolator 4n35

Abstract: GE 4N35 .4 l14h4 1339 .05 - 30 30 100 5 5 .4 photo darlingtons 2n5777 50* .25 _ 25 25 100 75 50
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OCR Scan
opto isolator 4n35 GE 4N35 l14f1 ir phototransistor 537 opto isolator L14G1 phototransistor 4N35-37

2N5777 equivalent

Abstract: transistor l14g2 .4 l14h4 1339 .05 - 30 30 100 5 5 .4 PHOTO DARLINGTONS 2n5777 50* .25 _ 25 25 100 75 50
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OCR Scan
transistor l14g2 L14G3 L14G1-L14G2-L14G3 l14g1 equivalent L14G3 equivalent L14G2

L14F1 npn photo transistor

Abstract: 4n26 opto isolator .4 l14h4 1339 .05 - 30 30 100 5 5 .4 PHOTO DARLINGTONS 2n5777 50* .25 _ 25 25 100 75 50
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OCR Scan
4n27 opto isolator 4N25-4N26-4N27 4N25-4N26-4N27-4N28 79H08 4N26-4N27-4N28 LED55CF LED56F
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