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JANTXV2N5686 Microsemi Corporation Power Bipolar Transistor, 50A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, SIMILAR TO TO-3, 2 PIN visit Digikey Buy
JANTX2N5686 Microsemi Corporation Power Bipolar Transistor, 50A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, TO-3, 2 PIN visit Digikey Buy

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2N5686 Datasheet

Part Manufacturer Description PDF Type
2N5686 Microsemi NPN Transistor Original
2N5686 Motorola 50A NPN SILICON POWER TRANSISTOR 80V 300W Original
2N5686 On Semiconductor Bipolar Power TO3 NPN 50A 80V; Package: TO-204 (TO-3); No of Pins: 2; Container: Tray; Qty per Container: 100 Original
2N5686 On Semiconductor High-Current Complementary Silicon Power Transistors Original
2N5686 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=50 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=300 Original
2N5686 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N5686 API Electronics Short form transistor data Scan
2N5686 Digitron 50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 300 WATTS Scan
2N5686 Diode Transistor Transistor Short Form Data Scan
2N5686 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N5686 General Transistor Power Transistor Selection Guide Scan
2N5686 Mospec POWER TRANSISTORS(50A,300W) - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=50 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=300 Scan
2N5686 Mospec High-Current Complementary Silicon Power Transistor Scan
2N5686 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2N5686 Motorola The European Selection Data Book 1976 Scan
2N5686 Motorola European Master Selection Guide 1986 Scan
2N5686 Motorola Power Transistor Selection Guide Scan
2N5686 N/A Transistor Shortform Datasheet & Cross References Scan
2N5686 N/A Basic Transistor and Cross Reference Specification Scan
2N5686 N/A Shortform Transistor PDF Datasheet Scan
Showing first 20 results.

2N5686

Catalog Datasheet MFG & Type PDF Document Tags

bsc 68e

Abstract: 2N5684 motorola 25 Ade MAXIMUM RATINGS (1) Rating Symbol 2N5685 2N5684 2N5686 Unit Collector-Emitter Voltage VCEO , . 1995 ftf) MOTOROLA 2N5684 2N5685 2N5686 'ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise , Voltage (Note 1) 2N5685 (lC = 0.2 Adc, Ib = 0) 2N5684, 2N5686 vCEO(sus) 60 80 â'" Vdc Collector Cutoff Current (Vce = 30 Vdc, Ib = 0) 2N5685 (VqE = 40 Vdc, Ib = 0) 2N5684, 2N5686 'ceo â'" 1.0 1.0 mAdc , , 2N5686 (VqE = 60 Vdc, VEB(0ff) = 1-5 Vdc, Tq = 150°C) 2N5685 (VqE = 80 Vdc, VEB(0ff) = 1-5 Vdc, Tq =
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OCR Scan
N5685 bsc 68e 2N5684 motorola 2N5685 MOTOROLA 3015 hj Bipolar HJ 2N5684/D N5684 N5686

2N5684

Abstract: 2N5686 2N5686 . . . designed for use in high-power amplifier and switching circuit applications. · High , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (1) Symbol 2N5684 2N5686 Unit VCEO 80 Vdc Collector-Base , Publication Order Number: 2N5684/D 2N5684 2N5686 ÎÎÎ Î Î Î Î Î ÎÎÎ Î Î Î , Width v 300 s, Duty Cycle v 2.0%. 2.0 Cob 2N5684 2N5686 15 - -30 V RL +2.0 V TO , 0.01 0.5 0.7 1.0 +4.0 V 2N5684 (PNP) 2N5686 (NPN) DUTY CYCLE 2.0% 2.0 3.0 5.0 7.0 10
ON Semiconductor
Original
PNP 2N5684

2N5683

Abstract: 2N5684 MAXIMUM RATINGS Characteristic Symbol 2N5683 2NS685 2N5684 2N5686 Unit Collector-Emitter Voltage VCEO 60 , 75 100 125 150 175 200 Tc, TEMPERATURE^ C) PNP NPN 2N5683 2N5685 2N5684 2N5686 50 AMPERE , Emitter Sustaining Voltage (1) (lc = 200 mA, L = 0 ) 2N5683, 2N5685 2N5684, 2N5686 VCEO(SUS) 60 80 V Collector Cutoff Current (Vce = 30 V, lB = 0 ) 2N5683, 2N5685 (VCE = 40 V, lB = 0 ) 2N5684, 2N5686 'ceo 1.0 , 1.5 V ) 2N5684, 2N5686 (VCE = 60 V, VBE J = 1.5 V, Tc = 150°C ) 2N5683, 2N5685 (VCE = 80 V, VBE(ofl
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OCR Scan
amplifier 2N5686 2n5686 gain

2N5685

Abstract: 2N5686 TECHNICAL DATA 2N5685 JAN, JTX, JTXV 2N5686 JAN, JTX, JTXV MIL-PRF QPL DEVICES , 2N5685 2N5686 Units VCEO VCBO VEBO IB IC 60 60 80 80 5.0 15 50 Vdc Vdc Vdc , 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit 2N5685 2N5686 V(BR)CEO 60 80 2N5685 2N5686 ICEO 500 500 µAdc 2N5685 2N5686 ICEX 500 500 µAdc 2N5685 2N5686 ICBO 2.0 2.0 mAdc OFF CHARACTERISTICS Collector-Emitter Breakdown
New England Semiconductor
Original
1000C 2000C MIL-PRF-19500/464

2n5684

Abstract: use in high-power amplifier and switching circuit applications. 2N5684 NPN 2N5686 50 AMPERE , ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS (1) Rating Symbol VCEO VCB VEB IC IB 2N5684 2N5686 , 2N5684 2N5686 - - - - - 1.0 2.0 10 2.0 5.0 Collector Cutoff Current (VCE = 80 Vdc, VEB(off) = , MHz) 2N5686 Small-Signal Current Gain (IC = 10 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) *Indicates JEDEC , 0.07 0.05 0.03 0.02 TJ = 25°C IC/IB = 10 VCC = 30 V 2N5684 (PNP) 2N5686 (NPN) VBB +4.0 V
ON Semiconductor
Original

2n5686

Abstract: PNP 2N5684 amplifier and switching circuit applications. 2N5684 2N5685 2N5686 * *ON Semiconductor Preferred Device , ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS (1) Rating Symbol VCEO VCB VEB IC IB 2N5685 60 60 2N5684 2N5686 80 80 , Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) 2N5685 2N5684, 2N5686 2N5685 2N5684, 2N5686 , Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) ICEX mAdc 2N5685 2N5684, 2N5686 2N5685 2N5684, 2N5686 ICBO mAdc 2N5685 2N5684, 2N5686 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) DC Current Gain
ON Semiconductor
Original
204AE

2N5686

Abstract: 2N5685 Level 2N5685 JAN JANTX JANTXV 2N5686 MAXIMUM RATINGS Ratings Symbol , Power Dissipation 2N5685 2N5686 Units VCEO VCBO VEBO IB IC @ TC = +250C (1) @ TC = +1000C , . Max. Unit 2N5685 2N5686 V(BR)CEO 60 80 2N5685 2N5686 ICEO 500 500 µAdc 2N5685 2N5686 ICEX 500 500 µAdc 2N5685 2N5686 ICBO 2.0 2.0 mAdc OFF , , 2N5686 JAN SERIES ELECTRICAL CHARACTERISTICS (con't) Characteristics Emitter-Base Cutoff Current
Microsemi
Original

2n5686 gain

Abstract: 2N5686 80V High-current complementary silicon power transistor 5.28 T. http://store.americanmicrosemiconductor.com/2n5686.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N5686 2N5686 8 0 V High- c urrent co m plem ent ary s ilico n po w er t ransis t o r Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very , 2N5686 $ 8.25 $ 5.28 $ 2.97 Total Price $ 5.28 Company Testimonials Store Policies Contact Us
American Microsemiconductor
Original

2N5686 motorola

Abstract: PNP 2N5684 High-Current Complementary Silicon Power Transistors NPN 2N5685 2N5686* . . . designed for use in , 300 WATTS MAXIMUM RATINGS (1) Symbol Rating 2N5685 2N5684 2N5686 Unit , 0.1 0.07 0.05 td 0.2 2N5684 (PNP) 2N5685, 2N5686 (NPN) 0.3 ­12 V RB tr 1.0 0.7 , - 2.0 Vdc Output Capacitance 2N5684 (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N5685, 2N5686 , , 2N5686 2N5685 2N5684, 2N5686 Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0
Motorola
Original
2N5686 motorola 2N5683 equivalent MOTOROLA 2N5686

2N5685

Abstract: 2N5685 MOTOROLA 50 15 300 1.715 - 6 5 t o +200 2N5684 2N5686 Unit Vdc Vdc Vdc Adc Adc Watts W/*C 80 eo SO , Device Data 2N5684 2N5685 2N5686 ` ELECTRICAL CHARACTERISTICS O c - 25°C unless otherwise noted , Data. Note 1: Pulse Test: Pulse Width s 300 us, Duty Cycle s 2.0%. 2N5684 2N5685,2N5686 fT 2.0 - 2000 , Vdc) 1-5 Vdc, T c - 150°C) 1-5 Vdc, Tc - 150" C) 2N5685 2N5684,2N5686 2N5685 2N5684, 2N5686 ICEX 2N5685 2N5684,2N5686 2N5685 2N5684, 2N5686 'CBO 2N5685 2N5684, 2N5686 lEBO _ _ _ _ _ _ _ _ Symbol
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OCR Scan

2N5684

Abstract: 2N5684G 2N5684 (PNP), 2N5686 (NPN) High-Current Complementary Silicon Power Transistors These packages , G A YY WW MEX ORDERING INFORMATION Device 2N5684G 250 2N5686 200 = Device Code x = 4 or 6 = Pb-Free Package = Location Code = Year = Work Week = Country of Orgin 2N5686G , Publication Order Number: 2N5684/D 2N5684 (PNP), 2N5686 (NPN) ÎÎÎ Î Î Î Î Î , ) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N5684 2N5686 Cob - 2000 1200
ON Semiconductor
Original
2N568

2N5685

Abstract: 464c TYPES 2N5685 AND 2N5686, JAN, JANTX AND JANTXV This specification is approved for use by all , +100°C VCBO VCE VEB O IB IC TJ and TSTG RJC O W 2N5685 2N5686 W V , IC = 25 A dc Min 2N5685 2N5686 15 15 Max hFE3 1/ VBE(sat) 1/ VCE(sat)1 1/ VCE , ,200 1,200 Max toff ton Min 15 15 pF 2N5685 2N5686 1/ Pulsed (see 4.5.1). 5.0 , ) V(BR)CEO 2N5685 2N5686 Collector to emitter cutoff current V dc V dc 60 80 2N5685
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Original
464c 3041 v MIL-PRF-19500/464C MIL-S-19500/464B MIL-PRF-19500
Abstract: MIL-PRF-19500/464 DEVICES LEVELS 2N5685 2N5686 JAN JANTX JANTV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol 2N5685 2N5686 , 5.0Vdc T4-LDS-0162 Rev. 1 (100546) 2N5685 2N5686 V(BR)CEO 2N5685 2N5686 ICEO 500 500 μAdc 2N5685 2N5686 ICEX 10 10 μAdc 2N5685 2N5686 ICBO 2.0 2.0 mAdc IEBO , 2N5686 (2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0% T4-LDS-0162 Rev. 1 (100546 Microsemi
Original

2N5686

Abstract: 2N5685 MIL-PRF-19500/464 DEVICES LEVELS 2N5685 2N5686 JAN JANTX JANTV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol 2N5685 2N5686 , (100546) 2N5685 2N5686 V(BR)CEO 2N5685 2N5686 ICEO 500 500 2N5685 2N5686 ICEX 10 10 Adc 2N5685 2N5686 ICBO 2.0 2.0 mAdc IEBO 1.0 mAdc Vdc 60 80 , Test 3 VCE = 50Vdc, IC = 560mAdc VCE = 60Vdc, IC = 640mAdc 2N5685 2N5686 (2) Pulse Test: Pulse
Microsemi
Original
2N5685 equivalent

2N5686

Abstract: PNP 2N5684 2N5686 . . . designed for use in high­power amplifier and switching circuit applications. · High , Voltage 2N5684 2N5686 Unit VCEO 80 Vdc Collector­Base Voltage VCB 80 Vdc , May, 2001 ­ Rev. 10 1 Publication Order Number: 2N5684/D 2N5684 2N5686 ÎÎÎ Î Î Î Î , Gain (IC = 10 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) 2.0 Cob 2N5684 2N5686 15 ­ *Indicates , . 2N5684 (PNP) 2N5686 (NPN) 20 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) Figure 3. Turn­On
ON Semiconductor
Original

2N5683

Abstract: 2N5686 WEST BOUND BROOK, NEW JERSEY 08805 2N5683,2N5684 PNP 2N5685,2N5686 NPN HIGH CURRENT COMPLEMENTARY , RATINGS Rating Symbol 2N5683 2N5685 2N5684 2N5686 Unit Collector Emitter Voltage VCEO 60 80 Vdc , 08805 2N5683, 2N5684 PNP, 2N5685, 2N5686 NPN â'¢ELECTRICAL CHARACTERISTICS (Tq = 25°C unless , 11 (lr â  0 2 Ado, lB - O) 2N5683. 2N56B5 2N5684, 2N5686 vCEO(susl 60 80 - Vdc Collector CutoM , (olf| â'¢ 1 5 Vdc) 2N5684, 2N5686 (VCE - 60 Vdc. VE8(â'ž|(| - 1 5 Vdc. Tc = 150°CI 2N5683. 2N5685 IVCE
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OCR Scan
digitron bound brook saia 063T1 5-J04 TM-35 digitron pulse M2L07

2N5684G

Abstract: 2N5686G 2N5684 (PNP), 2N5686 (NPN) High-Current Complementary Silicon Power Transistors These packages , ORDERING INFORMATION Device 2N5684G 250 2N5686 200 = Device Code x = 4 or 6 = Pb-Free Package = Location Code = Year = Work Week = Country of Orgin 2N5686G 150 Package Shipping , ), 2N5686 (NPN) ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎ Î Î Î Î Î , ) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N5684 2N5686 Cob - 2000 1200
ON Semiconductor
Original

2N5683

Abstract: 419AR / ^ TECHNICAL DATA SEMICONDUCTOR 2N5683, 2N56S4 NPN 2N5685, 2N5686 HIGH-CURRENT , 0084558 S | 2N5683, 2N5684 PNP, 2N5685, 2N5686 NPN T -3 3 -« a 3 r- 3 3 - J S · E L E C T R , ) V d c* T C 8 5 150°C) 2N 5683,2N 5685 V dc, T C = 150°CJ 2N5684, 2N5686 ICBO 2N5633, 2N5685 2N 5684, 2N5686 'e b o - 2N5683, 2N5685 2N5684, 2N5686 2N 5683, 2N5685 2N5684, 2N5686 V cE O isu s) 60 80 , MOTOROLA SC XSTRS/R F 12E D | b3b7254 GOflMSSI 7 | 2N5683, 2N5684 PNP, 2N5685, 2N5686 NPN T ' 3 3 - 5 3
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OCR Scan
419AR TQ-204M 2N5683 motorola 56852N5684
Abstract: 2N5684 (PNP), 2N5686 (NPN) High-Current Complementary Silicon Power Transistors These packages , 2N5686 200 = Device Code x = 4 or 6 = Pb-Free Package = Location Code = Year = Work Week = Country of Orgin 2N5686G 150 Package Shipping TO-3 (Pb-Free) 100 Units/Tray TO , October, 2007 - Rev. 12 1 Publication Order Number: 2N5684/D 2N5684 (PNP), 2N5686 (NPN , 2N5686 Cob - 2000 1200 (IC = 10 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) hfe 15 - ON Semiconductor
Original

2N5685

Abstract: 2N5686 , POWER, TYPES 2N5685 AND 2N5686, JAN, JANTX, AND JANTXV This specification is approved for use by all , 2N5686 PT (1) TC = +25°C PT (1) TC = +100°C VCBO VCEO VEBO IB IC TJ and TSTG , V dc Min Max Type Min 2N5685 2N5686 Max Min 15 15 60 60 Max 5 5 , Min Max 2 2 15 15 2N5685 2N5686 1,200 1,200 20 20 5.0 5.0 Switching (see , impedance 2/ 3131 See 4.3.2 Breakdown voltage collector to emitter 2N5685 2N5686 3011 Bias
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Original
Transformer Inspection Testing ck50 MIL-PRF-19500/464G MIL-PRF-19500/464F

2n5686

Abstract: 2N5685 TYPES 2N5685, 2N5686 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR PO W ER -AM PLIFIER A N D HIGH-SPEED-SW ITCHING APPLICATIO N S DESIG N ED FOR C O M P LE M E N TA R Y USE W ITH 2N 5683, 2N 5684 · · · , . 60 V 60 V 5V « - 50 A «- 15 A 2N5686 80 V 80 V 5V W - "C ontinuous C ollector , P O S T O F F IC E B O X 5 0 1 2 TYPES 2N5685, 2N5686 N-P-N SINGLE-DIFFUSED SILICON POWER , Common-Base Open-Circuit C0 bo NOTES: 2N5685 MIN M AX Iß = Iß » o C D ii 2N5686 MIN M A X SO 1 1 2
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OCR Scan
Showing first 20 results.