MIL-PRF-19500/488E MIL-PRF-19500/488D 2N5671 2N5672 MIL-PRF-19500 MIL-STD-750 - Datasheet Archive

 

The documentation and process conversion measures necessary to comply with this revision shall be completed by 9 March 2009.

 

INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 9 March 2009. MIL-PRF-19500/488E MIL-PRF-19500/488E 9 December 2008 SUPERSEDING MIL-PRF-19500/488D MIL-PRF-19500/488D 1 May 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER, TYPES 2N5671 2N5671 AND 2N5672 2N5672, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500 MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, high-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500 MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-3). 1.3 Maximum ratings. Unless otherwise specified, TC = +25C. PT (1) TA = +25C PT (2) TC = +25C RJC VCBO VCEO VEBO IC IB TSTG and TJ W W C/W V dc V dc V dc A dc A dc C 6.0 6.0 140 140 1.25 1.25 (1) Derate linearly 34.2 mW/C for TA > +25C. (2) Derate linearly 800 mW/C for TC > +25C. 120 150 90 120 7.0 7.0 30 30 10 10 -65 to +200 Types 2N5671 2N5671 2N5672 2N5672 1.4 Primary electrical characteristics at TA = +25C. hFE1 VCE = 2.0 V dc IC = 15 A dc IC = 15 A dc IB = 1.2 A dc Cobo 100 kHz < f < 1 MHz VCB = 10 V dc IE = 0 V dc Limits VCE(sat)1 pF 0.75 900 Min Max 20 100 |hfe| f = 5 MHz IC = 2 A dc VCE = 10 V dc Pulse response toff s 10 40 ton s 0.5 1.5 Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http://assist.daps.dla.mil/. AMSC N/A FSC 5961 MIL-PRF-19500/488E MIL-PRF-19500/488E Dimensions Symbol Notes Inches Min CD Max Millimeters Min .875 Max 22.23 CH .250 .450 6.35 11.43 HT .050 .135 1.27 3.43 HR .495 .525 12.57 13.34 HR1 .131 .188 3.33 4.78 LD .038 .043 0.97 1.09 LL .312 7.92 .050 L1 7 1.27 MHD .151 .161 3.84 4.09 MHS 1.177 1.197 29.90 30.40 PS .420 .440 10.67 11.18 4 PS1 .205 .225 5.21 5.72 4 .655 .675 16.64 17.15 s1 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Terminal 1, emitter; terminal 2,base; case, collector. 4. These dimensions should be measured at points .050-.055 inch (1.27-1.40 mm) below seating plane. When gauge is not used, measurement will be made at the seating plane. 5. The seating plane of the header shall be flat within .004 inch (0.10 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .006 inch (0.15 mm) concave to .006 inch (0.15 mm) convex overall. 6. Collector shall be electrically connected to the case. 7. LD applies between L1 and LL. Lead diameter shall not exceed twice LD within L1. 8. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions (similar to TO-3). 2 MIL-PRF-19500/488E MIL-PRF-19500/488E 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or http://assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500 MIL-PRF-19500, and on figure 1. * 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500 MIL-PRF-19500, MIL-STD-750 MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500 MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in paragraph 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 3 MIL-PRF-19500/488E MIL-PRF-19500/488E 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). * c. Conformance inspection (see 4.4 and tables I). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 MIL-PRF-19500 and as specified herein. * 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. * 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500 MIL-PRF-19500) Measurement JANS level (1) 3c JANTX and JANTXV levels Thermal impedance (see 4.3.2) 9 ICEX1 and hFE1 ICEX1 11 ICEX1 and h FE1; ICEX1 = 100 percent of initial value or 20 A dc, whichever is greater. hFE1 = 15 percent of initial value. ICEX1 and hFE1; ICEX1 = 100 percent of initial value or 20 A dc, whichever is greater. 12 See 4.3.1 See 4.3.1 13 (1) Thermal impedance (see 4.3.2) Subgroups 2 and 3 of table I herein. ICEX1 = 100 percent of initial value or 20 A dc, whichever is greater. hFE1 = 15 percent of initial value. Subgroup 2 of table I herein. ICEX1 = 100 percent of initial value or 20 A dc , whichever is greater. hFE1 = 25 percent of initial value. Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are TJ = +187.5 12.5C, VCB 30 V dc, TA = +35C max. TJ measurement shall be in accordance with method 3100 of MIL-STD-750 MIL-STD-750. * 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VH where appropriate). Measurement delay time (tMD) = 70 s max. See table II, group E, subgroup 4 herein. 4 MIL-PRF-19500/488E MIL-PRF-19500/488E 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table V of MIL-PRF-19500 MIL-PRF-19500 and table I herein. * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 MIL-PRF-19500 and 4.4.2.1 and 4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2.1 Group B inspection, (JANS) table E-VIA of MIL-PRF-19500 MIL-PRF-19500. Method Conditions B4 1037 VCB 30 V dc, for 2,000 cycles. B5 1027 VCB 30 V dc, TA = +125C 25C for 96 hours; PT = 6 W at TA = +112C or adjusted as required by the chosen TA to give an average lot TJ = +275C. Marking legibility requirement shall not apply. Subgroup 4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV) table E-VIB of MIL-PRF-19500 MIL-PRF-19500. Subgroup Method Conditions B3 1027 For eutectic die attach: TA +35C; adjust PT to achieve TJ = +187.5C 5C, VCB 30 V dc B3 1037 For solder die attach: VCB 30 V dc, 2,000 cycles. B6 1032 TA = +200C. B7 3053 Load condition C; (unclamped inductive lead, see figure 2); TC = +25C; duty cycle 10 percent; RS = 0.1 ohm; Test 1: Test 2: B7 tp 150 s; RBB1 = 1; VBB1 = 10 V dc max; RBB2 = 20; VBB2 = 4 V dc; IC = 30 A dc; VCC = 10 V dc, L = 50H, 0.1 tp 325 s; RBB1 = 40; VBB1 = 10 V dc max; RBB2 = 20; VBB2 = 4 V dc; IC = 6.5 A dc; VCC = 10 V dc, L = 500H, 0.1 Electrical measurements: See table I, subgroup 2 herein. 5 MIL-PRF-19500/488E MIL-PRF-19500/488E * 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500 MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Conditions C2 Test condition B. C2 2036 Test condition A, weight = 10 lbs, application time = 15 seconds. C5 3131 See 4.5.2, RJC = 1.25°C/W. C6 1026 For eutectic die attach: TA +35C; adjust PT to achieve TJ = +187.5C 5C, VCB 30 V dc C6 * 1056 1037 For solder die attach: VCB 30 V dc, 6,000 cycles. * 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 MIL-PRF-19500 and as specified in table II herein. Electrical measurements (endpoints) shall be in accordance with table I, subgroup 2 herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750 MIL-STD-750. * 4.5.2 Thermal resistance. Thermal resistance measurement shall be performed in accordance with method 3131 of MIL-STD-750 MIL-STD-750 using the guidelines in that method for determining IM, IH, and tH. Measurement delay time tMD = 300 ms max. See table E-IX of MIL-PRF-19500 MIL-PRF-19500. Forced moving air or draft shall not be permitted across the devices during test. 6 MIL-PRF-19500/488E MIL-PRF-19500/488E * TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 1 Visual and mechanical inspection 2071 Subgroup 2 Thermal impedance 2/ 3131 See 4.3.2 Breakdown voltage, collector to emitter 2N5671 2N5671 2N5672 2N5672 3011 IC = 200 mA dc; L = 15 mH; 30 Hz f 60 Hz, (see figure 3) V(BR)CEO Breakdown voltage, collector to emitter 3011 IC = 200 mA dc; L = 15 mH; RBE = 50 ohms; 30 Hz f 60 Hz (see figure 3) V(BR)CER IC = 200 mA dc; L = 2 mH; VBE = -1.5 V dc; 30 Hz f 60 Hz (see figure 3) V(BR)CEX 3011 90 120 110 140 2N5671 2N5671 2N5672 2N5672 V dc V dc V dc V dc 120 150 2N5671 2N5671 2N5672 2N5672 Breakdown voltage, collector to emitter °C/W ZJC V dc V dc Emitter to base cutoff current 3061 Bias condition D; VEB = 7.0 V dc IEBO 10 mA dc Collector to emitter cutoff current 3041 Bias condition D; VCE = 80 V dc ICEO 10 mA dc Collector to emitter cutoff current * 2N5671 2N5671 2N5672 2N5672 * 3041 Bias condition A; VBE = 1.5 V dc VCE = 110 V dc VCE = 135 V dc ICEX1 250 250 A dc A dc Collector to base cutoff current 2N5671 2N5671 2N5672 2N5672 3036 Bias condition D ICBO 25 mA dc Forward-current transfer ratio 3076 VCE = 120 V dc VCE = 150 V dc hFE1 VCE = 2.0 V dc; IC = 15 A dc; pulsed (see 4.5.1) See footnotes at end of table. 7 20 100 MIL-PRF-19500/488E MIL-PRF-19500/488E * TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 2 - Continued Forward-current transfer ratio 3076 VCE = 5.0 V dc; IB = 20 A dc; pulsed (see 4.5.1) Collector to emitter voltage (saturated) 3071 IC = 15 A dc; IB = 1.2 A dc; pulsed (see 4.5.1) VCE (sat)1 0.75 V dc Base emitter voltage (saturated) 3066 Test condition A; IB = 1.2 A dc; IC = 15 A dc; pulsed (see 4.5.1) VBE(sat) 1.5 V dc Collector to emitter voltage (saturated) 3071 IC = 30 A dc; IB = 6 A dc; pulsed (see 4.5.1) VCE(sat)2 5.0 V dc 15 10 mA dc mA dc hFE2 20 Subgroup 3 High temperature operation: Collector to emitter cutoff current TA = +150C 3041 ICEX2 VCE = 100 V dc VCE = 100 V dc 2N5671 2N5671 2N5672 2N5672 Low temperature operation: Forward-current transfer ratio Bias condition A; VBE = -1.5 V dc; TA = -65C 3076 hFE3 Subgroup 4 Magnitude of smallsignal short-circuit forward-current transfer ratio 3306 3236 VCB = 10 V dc; IE = 0; 100 kHz f 1 MHz 10 40 VCE = 10 V dc; IC = 2.0 A dc; f = 5.0 MHz Open circuit output capacitance 10 |hfe| VCE = 2.0 V dc; IC = 15 A dc; pulsed (see 4.5.1) See footnotes at end of table. 8 Cobo 900 pF MIL-PRF-19500/488E MIL-PRF-19500/488E * TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 4 - Continued Pulse response: 3251 Test condition A; except test circuit and pulse requirements in accordance with figure 4 Turn-on time VCC = 30 V dc 2 V dc; IC = 15 A dc; IB1 = 1.2 A dc ton 0.5 s Turn-off time VCC = 30 V dc 2 V dc; IC = 15 A dc; IB1 = 1.2 A dc; IB2 = 1.2 A dc toff 1.5 s Subgroup 5 Safe operating area (continuous dc) 3051 TC = +25C; t 1 s; 1 cycle; (see figure 5) Test 1 IC = 5.8 A dc; VCE = 24 V dc Test 2 IC = 0.9 A dc; VCE = 45 V dc Test 3 IC = 30 A dc; VCE = 4.67 V dc Test 4 2N5671 2N5671 only IC = 0.19 A dc; VCE = 90 V dc Test 5 2N5672 2N5672 only IC = 0.11 A dc; VCE = 120 V dc See footnotes at end of table. 9 MIL-PRF-19500/488E MIL-PRF-19500/488E * TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 MIL-STD-750 Method * Safe operating area (switching) Electrical measurements 3053 Conditions Load condition B; (clamped inductive load) (see figure 6); TC = +25C; Duty cycle 10 percent; tp > 10 s; RS = 0.1 ohm; RBB1 = 1; VBB1 = 10 V dc max; RBB2 = 20; VBB2 = 4 V dc; IC = 30 A dc; VCC = 90 V dc (2N5671 2N5671) and 120 V dc (2N5672 2N5672); RL 3.0 (2N5671 2N5671), 4.0 (2N5672 2N5672); L = 50 H, 0.1 ; CR = 1N1186A 1N1186A; Clamp voltage = 90 V dc +0, -5 (2N5671 2N5671); 120 V dc +0, -5 (2N5672 2N5672). Device fails if clamp voltage is not reached. See table I, subgroup 2 herein Subgroups 6 and 7 Not applicable 1/ 2/ For sampling plan, see MIL-PRF-19500 MIL-PRF-19500. This test required for the following end-point measurements only: Group B, subgroups 3, 4, and 5 (JANS). Group B, subgroups 2 and 3 (JAN, JANTX, and JANTXV). Group C, subgroup 2 and 6. Group E, subgroup 1. 10 Symbol Limits Min Unit Max MIL-PRF-19500/488E MIL-PRF-19500/488E * TABLE II. Group E inspection (all quality levels) ­ for qualification or re-qualification only. Inspection MIL-STD-750 MIL-STD-750 Method Sample plan Conditions Subgroup 1 45 devices c=0 Temperature cycling (air to air) 1051 Hermetic seal Fine leak Gross leak Test condition C, 500 cycles. 1071 Test conditions G or H. Test conditions C or D. Electrical measurements See table I, subgroup 2. Subgroup 2 Blocking life 45 devices c=0 1048 Electrical measurements Test temperature = +125C; VCB = 80 percent of rated; T = 1,000 hours. See table I, subgroup 2. Subgroup 4 Sample size N/A See MIL-PRF-19500 MIL-PRF-19500. Thermal impedance curves Subgroup 8 Reverse stability 45 devices c=0 1033 Condition B. 11 MIL-PRF-19500/488E MIL-PRF-19500/488E FIGURE 2. Safe operating area for switching between saturation and cutoff (unclamped inductive load). 12 MIL-PRF-19500/488E MIL-PRF-19500/488E NOTE: V(BR)CEQ , V(BR)CER , V(BR)CEX , is acceptable when the trace falls to the right and above point "A" for type 2N5671 2N5671. The trace shall fall to the right and above point "B" for type 2N5672 2N5672. FIGURE 3. V(BR)CEO , V(BR)CER , V(BR)CEX, measurement circuit. 13 MIL-PRF-19500/488E MIL-PRF-19500/488E NOTES: 1. The rise time (tr ) and fall time (tf) of the applied pulse shall be each 20 ns; duty cycle 2 percent; 2. generator source impedance shall be 50 ohms; pulse width = 20 s. Output sampling oscilloscope: Zin 100 k; Cin 50 pF; rise time 20 ns. FIGURE 4. Pulse response test circuit. 14 MIL-PRF-19500/488E MIL-PRF-19500/488E FIGURE 5. Maximum safe operating area graph (continuous dc). 15 MIL-PRF-19500/488E MIL-PRF-19500/488E FIGURE 6. Safe operating area for switching between saturation and cutoff (clamped inductive load). 16 MIL-PRF-19500/488E MIL-PRF-19500/488E 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or within the Military Service's system commands. Packaging data retrieval is available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory. The notes specified in MIL-PRF-19500 MIL-PRF-19500 are applicable to this specification.) 6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Title, number, and date of this specification. b. Packaging requirements (see 5.1). c. Lead finish (see 3.4.1). d. Product assurance level and type designator. * 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail vqe.chief@dla.mil. An online listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at http://assist.daps.dla.mil . 6.4 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue. 17 MIL-PRF-19500/488E MIL-PRF-19500/488E Custodians: Army - CR Navy - EC Air Force - 85 NASA - NA DLA - CC Preparing activity: DLA - CC (Project 5961- 2008-030) Review activities: Army - AR, MI, SM Navy - SH Air Force - 13, 19, 99 NOTE: The activities listed above were interested in this document as of the date of this document. Since organizations and responsibilities can change, you should verify the currency of the information above using the ASSIST Online database at http://assist.daps.dla.mil/ . 18