500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
2N5657G ON Semiconductor 0.5 A, 350 V NPN Bipolar Power Transistor, TO-225, 500-BLKBX visit Digikey Buy

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : 2N5657G Supplier : ON Semiconductor Manufacturer : Avnet Stock : 1,055 Best Price : $0.1740 Price Each : $0.57
Part : 2N5657G Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : €0.1758 Price Each : €0.3485
Part : 2N5657G Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : €0.1989 Price Each : €0.6837
Part : 2N5657G Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : 313 Best Price : $0.10 Price Each : $0.57
Part : 2N5657G Supplier : ON Semiconductor Manufacturer : Future Electronics Stock : 1,500 Best Price : $0.1780 Price Each : $0.19
Part : 2N5657 Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 1,589 Best Price : $0.25 Price Each : $0.31
Part : 2N5657G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 18,711 Best Price : $0.21 Price Each : $0.25
Part : 2N5657G Supplier : ON Semiconductor Manufacturer : America II Electronics Stock : 12,300 Best Price : - Price Each : -
Part : 2N5657 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 1,055 Best Price : $0.12 Price Each : $0.60
Part : 2N5657 Supplier : ON Semiconductor Manufacturer : Bristol Electronics Stock : 5 Best Price : - Price Each : -
Part : 2N5657 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 2,095 Best Price : - Price Each : -
Part : 2N5657 Supplier : Motorola Manufacturer : basicEparts Stock : 1,500 Best Price : - Price Each : -
Part : 2N5657 Supplier : STMicroelectronics Manufacturer : basicEparts Stock : 96 Best Price : - Price Each : -
Part : 2N5657G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 48 Best Price : $0.20 Price Each : $0.7130
Part : 2N5657G Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 48 Best Price : £0.21 Price Each : £0.5160
Shipping cost not included. Currency conversions are estimated. 

2N5657 Datasheet

Part Manufacturer Description PDF Type
2N5657 On Semiconductor POWER TRANSISTORS NPN SILICON Original
2N5657 On Semiconductor Bipolar Power C77 NPN 1A 350V; Package: TO-225; No of Pins: 3; Container: Bulk; Qty per Container: 500 Original
2N5657 On Semiconductor Plastic NPN Silicon High-Voltage Power Transistor Original
2N5657 STMicroelectronics Silicon NPN Transistor Original
2N5657 STMicroelectronics Silicon NPN Transistor Original
2N5657 STMicroelectronics TRANS GP BJT NPN 350V 0.5A 3SOT-32 Original
2N5657 Central Semiconductor NPN Silicon Power Transistors, TO-126 Case Scan
2N5657 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2N5657 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N5657 N/A Transistor Shortform Datasheet & Cross References Scan
2N5657 N/A Basic Transistor and Cross Reference Specification Scan
2N5657 N/A Shortform Transistor PDF Datasheet Scan
2N5657 N/A Shortform Transistor PDF Datasheet Scan
2N5657 N/A Transistor Replacements Scan
2N5657 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N5657 N/A Semiconductor Master Cross Reference Guide Scan
2N5657 N/A Shortform Transistor Datasheet Guide Scan
2N5657 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2N5657 National Semiconductor Shortform National Semiconductor Datasheet Scan
2N5657 National Semiconductor Transistors Scan
Showing first 20 results.

2N5657

Catalog Datasheet MFG & Type PDF Document Tags

2N5655

Abstract: 2N5657 ON Semiconductor ) 2N5655 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . , (1) Rating Symbol 2N5655 2N5657 Unit VCEO 250 350 Vdc Collector­Base , Order Number: 2N5655/D 2N5655 2N5657 Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î , 2N5657 VCEO(sus) 250 350 ­ ­ Vdc 2N5655 2N5657 V(BR)CEO 250 350 ­ ­ Vdc , ) Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 250 Vdc, IB = 0) ICEO 2N5655 2N5657
ON Semiconductor
Original

2n5657

Abstract: 2N5655, 2N5657 Plastic NPN Silicon High-Voltage Power Transistors These devices are designed , RATINGS (Note 1) Rating Symbol 2N5655 2N5657 Unit VCEO 250 350 Vdc , Device Package Shipping 2N5655G TOâ'225 (Pbâ'Free) 500 Units / Bulk 2N5657G TOâ , Publication Order Number: 2N5655/D 2N5655, 2N5657 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise , Collectorâ'Emitter Sustaining Voltage (IC = 100 mAdc (inductive), L = 50 mH) 2N5655 2N5657 VCEO(sus
ON Semiconductor
Original

2N5655

Abstract: 2N5657 Inchange Semiconductor Product Specification 2N5655 2N5656 2N5657 Silicon NPN Power , emitter GE S HAN C IN 2N5656 2N5657 2N5655 2N5656 Open base 2N5657 , Product Specification 2N5655 2N5656 2N5657 Silicon NPN Power Transistors CHARACTERISTICS Tj , sustaining voltage 2N5656 MIN TYP. MAX UNIT 250 IC=0.1A; IB=0;L=50mH 2N5657 V 300 , =250V; IB=0 2N5657 ICBO 2N5657 VCB=375V; IE=0 Collector cut-off current OND IC 10
-
Original
2N5655 equivalent 2N565

2N5655

Abstract: 2N5657 Product Specification www.jmnic.com 2N5655 2N5656 2N5657 Silicon NPN Power Transistors , voltage 2N5656 VALUE 250 Open emitter 300 2N5657 Collector-emitter voltage 275 2N5656 Open base 2N5657 VEBO V 350 2N5655 VCEO UNIT Emitter-base voltage 325 , case JMnic Product Specification www.jmnic.com 2N5655 2N5656 2N5657 Silicon NPN Power , =0.1A; IB=0;L=50mH V 300 350 2N5657 VCEsat-1 Collector-emitter saturation voltage IC
JMnic
Original

2N5657

Abstract: 2N5655 relays. 2N5655 2N5657 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 -350 VOLTS 20 WATTS · Excellent , IB 2N5655 250 275 2N5657 350 375 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base , (VCE = 150 Vdc, IB = 0) (VCE = 250 Vdc, IB = 0) 2N5655 2N5657 2N5655 2N5657 VCEO(sus) V(BR)CEO ICEO mAdc 2N5655 2N5657 0.1 0.1 0.1 0.1 1.0 1.0 10 10 10 Collector Cutoff Current (VCE = 250 Vdc, VEB(off) = , Vdc, IE = 0) ICEX mAdc 2N5655 2N5657 2N5655 2N5657 2N5655 2N5657 ICBO µAdc Emitter Cutoff Current (VEB
ON Semiconductor
Original

2N5655

Abstract: 2N5657 SavantIC Semiconductor Product Specification 2N5655 2N5656 2N5657 Silicon NPN Power , Collector-base voltage 2N5656 VALUE 275 Open emitter 325 2N5657 Collector-emitter voltage 250 2N5656 Open base 2N5657 VEBO V 375 2N5655 VCEO UNIT Emitter-base voltage , Semiconductor Product Specification 2N5655 2N5656 2N5657 Silicon NPN Power Transistors CHARACTERISTICS , ) Collector-emitter sustaining voltage 2N5656 MIN TYP. MAX UNIT 250 IC=0.1A; IB=0;L=50mH 2N5657
-
Original

2N5657

Abstract: 2N5657 SILICON NPN TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package. It is , -65 to 150 o C 150 o C 1/5 2N5657 THERMAL DATA R t hj-ca se Thermal , Curve MHz 25 pF 2N5657 DC Current Gain (NPN type) DC Current Gain (PNP type) Collector Emitter Saturation Voltage (NPN type) Collector Emitter Saturation Voltage (PNP type) 3/5 2N5657
STMicroelectronics
Original

2N5657

Abstract: 2N5657 ® SILICON NPN TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR s s DESCRIPTION The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic , o C 1/5 2N5657 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o , 30 15 5 250 MHz 25 pF 2N5657 DC Current Gain (NPN type) DC Current Gain (PNP type , 2N5657 SOT-32 (TO-126) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX
STMicroelectronics
Original

2N5655

Abstract: 2N5657 ON Semiconductort 2N5655 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . , (1) Rating Symbol 2N5655 2N5657 Unit VCEO 250 350 Vdc Collector­Base , May, 2001 ­ Rev. 6 1 Publication Order Number: 2N5655/D 2N5655 2N5657 Î Î Î Î Î , CHARACTERISTICS Collector­Emitter Sustaining Voltage (IC = 100 mAdc (inductive), L = 50 mH) 2N5655 2N5657 , ) 2N5655 2N5657 V(BR)CEO 250 350 ­ ­ Vdc Collector Cutoff Current (VCE = 150 Vdc, IB = 0
ON Semiconductor
Original

n5655

Abstract: N5657 250 275 2N5656 300 325 6.0 0.5 1.0 0.25 20 0.16 - 6 5 t o + 150 2N5657 350 375 Unit Vdc , otorola, Inc. 1995 ($J M O T O R O L A 2N5655 2N5656 2N5657 ` ELECTRICAL CHARACTERISTICS (T q = 25 , vdc) vdc) vdc) Vdc, T q = 100°C) Vdc, T q = 100°C) Vdc, T q = 100°C) 2N5655 2N5656 2N5657 2N5655 2N5656 2N5657 ICBO 2N5655 2N5656 2N5657 lEBO 2N5655 2N5656 2N5657 2N5655 2N5656 2N5657 2N5655 2N5656 2N5657 ICEX V cE O (su s) 250 300 350 250 300 350 - - - - - - Vdc Symbol Min Max Unit
-
OCR Scan
n5655 N5657

power transistor audio amplifier 500 watts

Abstract: 2N5655 ON Semiconductor ) 2N5655 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . , MAXIMUM RATINGS (1) Rating Collector-Emitter Voltage Symbol 2N5655 2N5657 Unit VCEO , Publication Order Number: 2N5655/D 2N5655 2N5657 Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î , Sustaining Voltage (IC = 100 mAdc (inductive), L = 50 mH) 2N5655 2N5657 VCEO(sus) 250 350 - - Vdc Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) 2N5655 2N5657 V(BR)CEO
ON Semiconductor
Original
power transistor audio amplifier 500 watts

ff 0401

Abstract: SGS-THOMSON iW 2N5657 SILICON NPN TRANSISTOR . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR D ESCRIP TIO N The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic , April 1997 1/6 2N5657 THERMAL Rihj-case DATA T h e rm a l R e s is ta n c e J u n c tio n , - SCS-THOMSON 2N5657 DC Current Gain (N P N type) 0-4033 DC Current Gain (PNPtype , Voltage (PNP type) Ö -402« ^ 7# raociamyieDTOmoes / r r sG S -m 0M S 0N 3/6 2N5657
-
OCR Scan
ff 0401

2N5655

Abstract: 2N5657 1.0 0.25 20 0.16 65 t o + 150 2N5657 350 375 Unit Vdc Vdc Vdc Ade IB Pd T j. Tstg Ade Watts W , Motorola Bipolar Power Transistor Device Data 3 -6 3 2N5655 2N5656 2N5657 'E LE C TR IC A L , 2N5657 2N5655 2N5656 2N5657 2N5655 2N5656 2N5657 'CEX 2N5655 2N5656 2N5657 2N5655 2N5656 2N5657 'CBO 2N5655 2N5656 2N5657 'EBO _ - Characteristic | Symbol | Min | Max | Unit , 2NS655 2N5656 2N5657 - V C E - 1 0 V - hFE, D C CURRENT GAIN lc. COLLECTOR CURRENT (mA
-
OCR Scan

2N5655

Abstract: 2N5656 Operating and Storage Junction Temperature Range Symbol 2N5655 2N5656 2N5657 Unit VCEO , Silicon High-Voltage Power Transistor 2N5655 2N5656 2N5657 SEMICONDUCTOR TECHNICAL DATA Order , °C Bonding Wire Limit Curves apply below rated VCEO 2N5655 2N5656 2N5657 0.02 0.05 There are two , (inductive), L = 50 mH) 2N5655 2N5656 2N5657 VCEO(sus) 250 300 350 - - - Vdc Collector­Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) 2N5655 2N5656 2N5657 V(BR)CEO 250 300 350
Motorola
Original

2N5657

Abstract: 2N5655 ORDERING INFORMATION Device 2N5655 2N5655G 2N5657 2N5657G Package Shipping TO-225 500 , 2N5655, 2N5657 Plastic NPN Silicon High-Voltage Power Transistor These devices are designed for , Emitter-Base Voltage 2N5657 Unit VCEO 250 350 Vdc VCB Collector-Emitter Voltage , : 2N5655/D 2N5655, 2N5657 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎ Î Î Î Î Î Î Î Î Î Î , Collector-Emitter Sustaining Voltage (IC = 100 mAdc (inductive), L = 50 mH) 2N5655 2N5657 VCEO(sus) 250
ON Semiconductor
Original
N565
Abstract: ORDERING INFORMATION Device 2N5655 2N5655G 2N5657 2N5657G Package Shipping TOâ'225 500 , 2N5655, 2N5657 Plastic NPN Silicon Highâ'Voltage Power Transistor These devices are designed , 2N5657 Unit VCEO 250 350 Vdc VCB Collectorâ'Emitter Voltage 2N5655 275 375 , Publication Order Number: 2N5655/D 2N5655, 2N5657 ÃÃÃ Ã Ã Ã Ã Ã , (inductive), L = 50 mH) 2N5655 2N5657 VCEO(sus) 250 350 â' â' Vdc Collectorâ'Emitter ON Semiconductor
Original

F25 transistor

Abstract: SGS-THOMSON RJflD©^@HLiOT©li®fl©i 2N5657 SILICON NPN TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N5657 is a silicon epitaxial-base NPN transistor in Jedee SOT-32 plastic package. It is intended for use output amplifiers, low current, high voltage converters , Tj June 1997 °C 1/3 97 2N5657 THERMAL DATA Rthj-case Therm al R esistance , 2N5657 DC Current Gain (NPNtype) DC Current Gain (PNP type) G -4 0 2 7 Collector Emitter
-
OCR Scan
F25 transistor 10OKH

2N5657

Abstract: 2N5657 ® SILICON NPN TRANSISTOR s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic , o C 1/5 2N5657 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o , 30 15 5 250 MHz 25 pF 2N5657 DC Current Gain (NPN type) DC Current Gain (PNP type , 2N5657 SOT-32 (TO-126) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX
STMicroelectronics
Original

2N5657

Abstract: transistor AC 307 2N5657 ® SILICON NPN TRANSISTOR s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic , o C 1/5 2N5657 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max o , V BE hf e Min. V CE = 375 V Derating Curve MHz 25 pF 2N5657 DC Current Gain , ) Collector Emitter Saturation Voltage (PNP type) 3/5 2N5657 SOT-32 (TO-126) MECHANICAL DATA mm
STMicroelectronics
Original
transistor AC 307

DK53

Abstract: dk52 2N5616 2N5618 2N5629 2N5632 2N5633 2N5634 2N5655 2N5656 2N5657 2N5671 2N5672 2N5679 2N5680 , BD707 MJE3055T BD709 BD243B BUV50 BDW51C BDW51C BDW51C MJ802 BDW51C BUV50 BUV50 2N5657 2N5657 2N5657 BUV50 BUV50 2N5680 2N5680 2N5681 2N5682 2N5339 BUX10 BDW52C BDW52C 2N5884 , TIP31A TIP31A BU208A BDW51C BU208A 2N5657 2N5657 MJE182 BD237 BU208A BU208A BU208A BU326A , MJE182 BU326A BU326A BUX80 BUX80 BUX80 BUX80 2N5657 BUX80 TIP48 TIP48 TIP48 2N5657 BD437
STMicroelectronics
Original
DK53 dk52 BU724AS mje2055 2n3055 replacement BUX98PI 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025

BIPOLAR TRANSISTOR 2n

Abstract: 250 275 2N5656 300 325 6.0 0 .5 1.0 2N5657 350 375 Unit Vdc Vdc Vdc Ade Ib pd 0 .2 , L A 2N5655 2N5656 2N5657 *ELECTRICAL CHARACTERISTICS OFF CHARACTERISTICS C o lle c to r-E m , Data 2N5655 2N5656 2N5657 Figure 4. Current Gain 10 20 30 50 100 200 300 , 2N5657 PACKAGE DIMENSIONS NOTES: 1 2. D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y
-
OCR Scan
BIPOLAR TRANSISTOR 2n

BUV48I

Abstract: BU808DXI PREFERRED INDUSTRY STANDARD , , 2N5632 2N5633 2N5634 2N5655 2N5656 2N5657 2N5671 2N5672 , 2N5657 2N5671 2N5672 2N5679 2N5680 2N5681 2N5682 2N5684 2N5686 2N5337 2N5339 BUV20 BUX10 , 2N5884 2N5885 2N5886 BUX10 BDW51C 2N5671 2N5671 2N5657 2N5657 2N5657 2N5671 2N5671 2N5680 , TIP31A BU208A BDW51C BU208 2N5657 2N5657 MJE182 2N4923 BU208 BU208 BU208 BU326A BD243B , MJE180 BU326A BU326A BUW34 BUW34 BUW34 BUW34 2N5657 BUW34 TIP48 TIP48 TIP48 2N5657 BD437
-
Original
BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173

B0411

Abstract: B0733 2N5494 2N5495 2N5496 2N5497 2N5559 2N5614 2N5616 2N5618 2N5629 2N5632 2N5633 2N5634 2N5655 2N5656 2N5657 2N5671 2N5672 2N5679 2N5680 2N5680 2N5657 BUV50 BUV50 2N5680 2N5415 2N5416 BUX48A BUX48A 2N5339 2N5339 , BDW51C BUV50 BUV50 2N5657 2N5657 2N5339 2N5339 2N5339 2N5339 2N5339 2N5038 2N6547 2N6547 2N6547 , BU208A TIP31A TIP31A BU208A BDW51C BU208A 2N5657 2N5657 MJE182 BD237 BU208A BU208A BU208A BU326A BD243B , BU326A BU326A BUX80 BUX80 BUX80 BUX80 2N5657 BUX80 TIP48 TIP48 TIP48 2N5657 BD437 BD439 BD441 MJE340
-
OCR Scan
B0411 B0733 2SC4977 THD200F1 2N5415 REPLACEMENT TIP 2n3055 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195
Showing first 20 results.