2N5632 2N5633 2N5634 - Datasheet Archive

 

Product Specification 2N5632 2N5633 2N5634 Silicon NPN Power Transistors DESCRIPTION With TO-3 package Low collector saturation

 

Inchange Semiconductor Product Specification 2N5632 2N5632 2N5633 2N5633 2N5634 2N5634 Silicon NPN Power Transistors DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol TOR UC Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO OND IC PARAMETER Collector-base voltage SEM GE HAN INC Collector-emitter voltage CONDITIONS 2N5632 2N5632 2N5633 2N5633 Open emitter UNIT 100 120 2N5634 2N5634 2N5632 2N5632 V 140 100 2N5633 2N5633 Open base 2N5634 2N5634 VEBO VALUE Emitter-base voltage 120 V 140 Open collector 7 V 10 A 150 W IC Collector current PD Total Power Dissipation Tj Junction temperature 150 Tstg Storage temperature -65~200 VALUE UNIT 1.1 /W TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N5632 2N5632 2N5633 2N5633 2N5634 2N5634 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2N5632 2N5632 VCEO(SUS) Collector-emitter sustaining voltage 2N5633 2N5633 TYP. MAX UNIT 100 IC=0.2A ;IB=0 V 120 140 2N5634 2N5634 VCEsat-1 Collector-emitter saturation voltage IC=7A; IB=0.7A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=10A ;IB=2A 3.0 V Base-emitter saturation voltage IC=10A ;IB=2A 2.5 V Base-emitter on voltage IC=5A ; VCE=5V 1.5 V 1.0 mA VBEsat VBE 2N5632 2N5632 ICEO ICEV IEBO hFE fT 2N5633 2N5633 VCE=60V; IB=0 2N5634 2N5634 Collector cut-off current VCE=50V; IB=0 VCE=70V; IB=0 Collector cut-off current INCH DC current gain Transition frequency VEB=7V; IC=0 2N5632 2N5632 2N5633 2N5633 OND EMIC GE S AN Emitter cut-off current TOR UC VCE=ratedVCB; VBE(off)=1.5V TC=150 1.0 5.0 mA 1.0 mA 2N5634 2N5634 IC=1A ; VCE=20V 2 100 20 80 15 IC=5A ; VCE=5V 25 60 1.0 MHz Inchange Semiconductor Product Specification 2N5632 2N5632 2N5633 2N5633 2N5634 2N5634 Silicon NPN Power Transistors PACKAGE OUTLINE TOR UC OND IC SEM GE HAN INC Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3