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2N5629 MOTOROLA

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Abstract: MOTOROLA TECHNICAL DATA PNP SEMICONDUCTOR 2N5629 2N5630 2N5631 2N6029 2N6030 2N6031 , V EB 2N5629 2 N 56 3 0 2N6029 2 N 6 0 3 0 100 100 120 120 2N5631 2N 6031 140 140 U n it , 2 | 7 "" 3 3 ~ ~ f~ - 2N5629, 2N5630, 2N5631 NPN 2N6029, 2N6030, 2N6031 PNP ` E L E C T R IC A , For PNP test circuit, reverse all polarities and 01. 3-106 A. MOTOROLA SC XSTRS/R F 12E D | b3b7254 0084552 4 I 2N5629, 2N5630, 2N5631 IMPN 2N6029, 2N6030, 2N6031 PNP -
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2NS629
Abstract: MOTOROLA SC -CDI0DES/0PT03- Im ]>F§ b3t,72S5 Q37T3Ô 3 | ,6 3 6 7 2 5 5 MOTOROLA SC (D IO D E S /O P T O ) 34C 37938 D SILICON POW ER TR A N SISTO R DICE (continued) T-3Z-0! DIE NO. - PNP LINE SOURCE - PL500.3 DIE NO. - NPN LINE SOURCE - PL500.4 K jB | NPN PNP , than that of the following device types: NPN 2N3771 2N3772 2N5301 2N5302 2N5303 2N5629 2N5885 , . Detailed device characteristics are available from your Motorola sales representative. 3-14 -
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2N6331 2N5885 MOTOROLA MJ802 MOTOROLA 2N5886 MOTOROLA 2n4399 2C5886 2C5884 2N5886 2N6257 2N6326
Abstract: Index Motorola ThmsnCSFEFC ThmsnCSFEFC See Index See Index Semelab NthAmerSemi Motorola Motorola See Index See Index See Index Motorola SemiconTech See Index Mallory See Index See Index Motorola , Motorola CrimsonSemi Semicoa NthAmerSemi See Index Indust Mexi NthAmerSemi IntlPwrSemi TRW Optron See Index Motorola SemiconTech See Index Motorola SemiconTech Sid St Dvcs GE Solid St See Index GE Solid St TR Optron , PTC173 2N5629 2N6302 ~~ ~g 80 80 100 100 100 100 100 120 120 120 120 120 120 120 140 140 140 140 Short Form Catalog
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MRF435 30G140 2SC2922 SANKEN LS2025 2SC3241 MRF454 motorola BUS48A BUV48A S01459 TH560 2N6102
Abstract: NthAmerSemi TexslnstLtd See Index ThmsnCSFEFC Motorola ThmsnCSFEFC See Index See Index See Index Motorola Motorola See Index See Index See Index Motorola SemiconTech Motorola SemiconTech See Index CrimsonSemi Motorola NthAmerSemi Mallory See Index See Index Motorola SemiconTech Motorola SemiconTech NthAmerSemi See Index NthAmerSemi Semelab See Index See Index Motorola SemiconTech Motorola SemiconTech See Index See , BD318 BD318 BD318 PTC173 2N5629 2N6029 MJE4341 MJE4341 MJE4351 MJE4351 EFT069S NPN 15 15 15 15 International Diode
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BT061S BDX50 GENTRON STH16018 BDY77 BT061 BT061R BT061RS BT062 BT062R
Abstract: 2N5629 MJ4035 BD317 2N6029 MJ4032 BD318 25/100 1 k/ 25 min 8 10 5 1.2 typ 1.2 typ 8 1 1 200 150 200 120 , /h(e/ («> 1 MHz (continued) MOTOROLA EUROPEAN MASTER SELECTION GUIDE 3-19 -
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2N3055H 2N3055 MJ15022 MJ16016 BUT15 MJ15024 MJ15025 2n3055 MJ15003 2N3055H MOTOROLA MJ15003 Motorola MJ15024-MJ15025 MJ15003 MJ15004 2N3055A MJ2955 MJ2955A MJ15015
Abstract: MOTOROLA Order this document by 2N5630/D SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 , . All Limits are applicable and must be observed. REV 7 © Motorola, Inc. 1995 Motorola Bipolar , ( us) tr, tf 10 ns DUTY CYCLE = 1.0% 51 ­ 9.0 V RB 0 +11 V RC 25 us Motorola , 7.0 IC, COLLECTOR CURRENT (AMP) 10 20 2N5629, 30, 31 2N6029, 30, 31 0.07 0.05 0.1 , 5.0 7.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 10 20 Figure 6. Turn­Off Time Motorola Motorola
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2N6031 MOTOROLA MOTOROLA 2N6031 MOTOROLA 2N5631 2N6031 amplifier 1N5825 2N5631 MOTOROLA
Abstract: Blick fällt natürlich auf den 2N3055, Datenblatt 2 Motorola, dessen PNP-Komplementärtyp MJ2955 heißt , Stromverstärkung (Hfe) auf als der 2N3055, liegen aber mit der Transitfequenz deutlich Motorola ist der BD317 identisch mit dem 2N5629 / 2N5630 / 2N5631. Als nächste Variante wird oft über den 2N3772 nachgedacht , . Interessant ist die MJ150xx-Serie von Onsemi (ehem. Motorola). Hier gibt es Exemplare mit hoh -
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CV120 TJ2499 SJ1499 transistor tj2499 stk 200W sfc2709 A709 transistor CV121
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Voltage High Power Transistors . . . designed , Motorola Bipolar Power Transistor Device Data 3­59 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , 0.3 0.2 td @ VBE(off) = 5.0 V 0.1 0.07 0.05 0.03 0.2 0.3 2N5629, 30, 31 2N6029, 30, 31 0.5 0.7 1.0 2.0 , . Switching Times Test Circuit 3­60 Figure 3. Turn­On Time Motorola Bipolar Power Transistor Device Data , Figure 6. Turn­Off Time Motorola Bipolar Power Transistor Device Data 3­61 2N5630 2N5631 2N6030 Motorola
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2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 2sd313 equivalent MJ15012 MJE15030 2N6339 2N6341 2N6497 MJ15011
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors , , Tstg ­ 65 to + 150 TIP110 TIP111* TIP112* PNP TIP115 TIP116* TIP117* *Motorola Preferred Device , Motorola recommended choices for future use and best overall value. REV 1 Motorola Bipolar Power , Motorola Bipolar Power Transistor Device Data TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 r(t , Motorola Bipolar Power Transistor Device Data 3­897 TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 NPN Motorola
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C 3883 2N6254 REPLACEMENT TIP116 TEXAS MOTOROLA TIP115 transistor BU326 bu180 220AB MJ15016 BU208A MJE16106 MJ16012 MJ10009
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE1320 NPN Silicon Power Transistor Switchmode Series , are given to facilitate "worst case" design. 3­620 Motorola Bipolar Power Transistor Device Data , Time TC = 100_C (1) Pulse Test: Pulse Width = 300 us. Duty Cycle 2%. Motorola Bipolar Power , 3­622 Motorola Bipolar Power Transistor Device Data MJE1320 TYPICAL DYNAMIC CHARACTERISTICS IC , VBE(off) at Point A. Motorola Bipolar Power Transistor Device Data 3­623 MJE1320 Table 2 Motorola
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2N3055 equivalent transistor NUMBER MJE350 equivalent bd139 equivalent transistor 2n6284 equivalent TIP152 equivalent MJE371 equivalent TIP101 TIP102 TIP106 TIP107 TIP31C TIP32C
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Transistors . . . designed , Operating Area 2N3055 * PNP MJ2955* *Motorola Preferred Device NPN ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ , TEMPERATURE (°C) 175 200 Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. 3­2 Motorola Bipolar Power Transistor Device Data , Area Motorola Bipolar Power Transistor Device Data 3­3 2N3055 MJ2955 NPN 2N3055 500 300 200 Motorola
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texas 2n3055 MJ2955 replacement BU100 BDX54 2SD424 2N5655 equivalent 204AA TIP120 TIP121 TIP122 TIP125 TIP126
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Plastic Silicon Power Transistors . . . , 3­194 Motorola Bipolar Power Transistor Device Data ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , 0.04 0.06 Figure 2. Switching Time Test Circuit Figure 3. Turn­On Time Motorola Bipolar Power , . Capacitance 3­196 Motorola Bipolar Power Transistor Device Data BD787 BD788 NPN BD787 400 300 hFE , . Temperature Coefficients Motorola Bipolar Power Transistor Device Data 3­197 CASE 221D Isolated TO Motorola
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IR642 IR3001 2N6410 2SD375 2SC931 BD411-8 225AA TIP127 TIP73B TIP74 TIP74A TIP74B
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Plastic Power Darlingtons . . . , Derating REV 7 3­208 Motorola Bipolar Power Transistor Device Data , Vdc Vdc Motorola Bipolar Power Transistor Device Data 3­209 BDV65B BDV64B NPN 10K VCE = 4 , Figure 6. Active Region Safe Operating Area 3­210 Motorola Bipolar Power Transistor Device Data , Motorola Bipolar Power Transistor Device Data 3­211 CASE 221D Isolated TO­220 Type UL Recognized Motorola
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BDV65B equivalent buv48 equivalent tip127 pin details mje340 TIP75 TIP75A TIP75B TIP75C 2N6488 2N6490
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bipolar Power PNP Low Dropout Regulator Transistor The , Vdc uAdc Symbol Min Typ Max Unit 3­616 Motorola Bipolar Power Transistor Device Data MJE1123 , . Base­Emitter Saturation Voltage versus Temperature 3­617 Motorola Bipolar Power Transistor Device Data , and LT1123 Circuit Figure 8. Maximum Forward Bias Safe Operating Area 3­618 Motorola Bipolar , 0.01 0.01 Figure 9. Typical Thermal Response Motorola Bipolar Power Transistor Device Data Motorola
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TIP42C as regulator 2SC103 NSP2100 MOTOROLA MJ15024 MJE340 REGULATOR MJE2482 2N6491 MJE13005 TIPL752 TIPL752A TIPL753 TIPL753A
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic NPN Silicon High-Voltage Power Transistor . . , must be observed. REV 3 Motorola Bipolar Power Transistor Device Data 3­63 , Area 3­64 Motorola Bipolar Power Transistor Device Data 2N5655 2N5656 2N5657 300 200 hFE , DC , 0.2 0.1 1.0 500 Figure 7. Turn­On Time Figure 8. Turn­Off Time Motorola Bipolar Power , simulator circuit. See data sheet for details. Devices listed in bold, italic are Motorola preferred Motorola
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2N5657 equivalent 2N3792 application notes 2SC2331 Y tip47 419 TIPL755 TIPL755A TIPL760 TIPL760A MJ16110 MJ16010
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . , Motorola Bipolar Power Transistor Device Data ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , Motorola Bipolar Power Transistor Device Data 3­161 CASE 221D Isolated TO­220 Type UL Recognized , , italic are Motorola preferred devices. Motorola Bipolar Power Transistor Device Data Selector Guide , voltages are given, the format is V CEO(sus)/VCES. Devices listed in bold, italic are Motorola preferred Motorola
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pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 BD250C EQUIVALENT BD136 BD138 BD140 BD140-10 MJE16002
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic High Power Silicon PNP Transistor . . . , MHz * Pulse Test: Pulse Width 300 us, Duty Cycle 2.0. REV 7 3­204 Motorola Bipolar , 1000 D = 0 (SINGLE PULSE) Figure 5. Thermal Response Motorola Bipolar Power Transistor Device Data , . See data sheet for details. Devices listed in bold, italic are Motorola preferred devices. Motorola Bipolar Power Transistor Device Data Selector Guide 2­3 STYLE 1: PIN 1. 2. 3. 4. BASE Motorola
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transistor MJ15024 tip3055 equivalent RCA1C13 IC 3526 2N6277 applications RCA1B09 BD802
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage NPN Silicon Transistors . . . designed , Bandwidth Product (IC = 200 mAdc, VCE = 10 Vdc, f = 1.0 MHz) fT 2.5 - MHz Motorola Bipolar , Load Line Figure 5. Sustaining Voltage Test Circuit 3­418 Motorola Bipolar Power Transistor , . See data sheet for details. Devices listed in bold, italic are Motorola preferred devices. Motorola Bipolar Power Transistor Device Data Selector Guide 2­3 STYLE 1: PIN 1. 2. 3. 4. BASE Motorola
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TIP36 BD413 2SC331 BD139.6 BD139.16 BD139.10 MJ410
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE3439 NPN Silicon High-Voltage Power Transistors . . , TEMPERATURE (°C) 140 160 Figure 1. Power­Temperature Derating Curve REV 7 3­630 Motorola Bipolar , 1000 VCE, COLLECTOR­EMITTER VOLTAGE (VOLTS) Figure 2. Active­Region Safe Operating Area Motorola , Motorola preferred devices. Motorola Bipolar Power Transistor Device Data Selector Guide 2­3 , voltages are given, the format is V CEO(sus)/VCES. Devices listed in bold, italic are Motorola preferred Motorola
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Mje350 TRANSISTOR BC 208 2SB527
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TM Data Sheet SWITCHMODETM NPN Designer's Bipolar , Turn­Off (No Current Tail) · Full Characterization at 125_C · Motorola "6 SIGMA" Philosophy Provides Tight , boundaries on device characteristics - are given to facilitate "worst case" design. Motorola Bipolar , °C @ TC = 25°C @ TC = 25°C VCE(dsat) 7.5 4.5 V 14.5 6 MJE18206 MJF18206 3­770 Motorola Bipolar , us ns Crossover Time 600 1100 800 MJE18206 MJF18206 Motorola Bipolar Power Transistor Device Motorola
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BD127 transistor 2SA1046 electronic ballast MJE13005 2SD630 BD388 transistor bd4202 MJE/MJF18206
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