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2N5606 Datasheet

Part Manufacturer Description PDF Type
2N5606 Semelab Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=60 / Ic=5 / Hfe=70-200 / fT(Hz)=70M / Pwr(W)=25 Original
2N5606 API Electronics Short form transistor data Scan
2N5606 API Electronics TRANSISTOR,BJT,NPN,100V V(BR)CEO,5A I(C),TO-39 Scan
2N5606 General Semiconductor Low Frequency Transistors Scan
2N5606 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2N5606 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N5606 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N5606 N/A Semiconductor Master Cross Reference Guide Scan
2N5606 N/A Shortform Transistor Datasheet Guide Scan
2N5606 N/A Transistor Shortform Datasheet & Cross References Scan
2N5606 N/A Basic Transistor and Cross Reference Specification Scan
2N5606 N/A Catalog Scans - Shortform Datasheet Scan
2N5606 N/A Shortform Transistor PDF Datasheet Scan
2N5606 N/A Transistor Replacements Scan
2N5606 PPC Products Transistor Short Form Data Scan
2N5606 Silicon Transistor Low Frequency Silicon Power Transistor Scan
2N5606 Solidev Semiconductors Solid State Products (Transistor Guide) Scan
2N5606 Solitron Devices Planar Power Transistor Scan

2N5606

Catalog Datasheet MFG & Type PDF Document Tags

2N5606

Abstract: 2N5608 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5606 2N5608 , 2N5606 Collector-base voltage Collector-emitter voltage SEM 2N5608/5610 ANG H INC 2N5612 Open emitter 2N5606 2N5608/5610 Emitter-base voltage VALUE UNIT 80 100 V , Semiconductor Product Specification Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2N5606 VCEO(SUS
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Original
2N5606/5610 2N5608/5612

2N5606

Abstract: 2N5608 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5606 2N5608 , (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS 2N5606 , Collector-emitter voltage 60 2N5608/5610 Open base 2N5612 VEBO V 120 2N5606 VCEO UNIT , NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5606 VCEO(SUS) Collector-emitter sustaining voltage
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Original
5610

2N5606

Abstract: 2N5610 Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5606 2N5608 2N5610 , (TO-66) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS 2N5606 VCBO , 80 2N5608/5610 Open base 2N5612 VEBO V 100 2N5606 VCEO UNIT Emitter-base , Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5606 VCEO Collector-emitter sustaining voltage
JMnic
Original
5610 npn 5612
Abstract: BIPOLAR NPN PLANAR POWER TRANSISTORS DEVICE TYPE PEAK bvceo PACKAGE VOLTS AMPS hFE min/max < < o m > © 'c V CE (sat) max VOLTS c @ 'b A A o TO-213 (TO-66) 2N4864 2N5598 120 60 2.0 2.0 50-150 70-200 0.5/5.0 1.0/5.0 0.2 0.85 0.5/0.05 2.0/0.2 2N5600 80 2.0 30- 90 1.0/5.0 0.85 2.0/0.2 2N5602 80 2.0 70-200 1.0/5.0 0.85 2.0/0.2 2N5604 100 2.0 30- 90 1.0/5.0 0.85 2.0/0.2 *2N5606 60 5.0 -
OCR Scan
2N5660 2N5661 2N5664 2N5665 2N5427 2N5428

SILICON TRANSISTOR CORP

Abstract: STP515 N5663 ^ 2N5333 STP3501 STP3502 STP3503 STP3504 2N4387 2N4388 2N2657 2N2658 2N5237* 2N5238* 2N5606
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OCR Scan
2N5541 2N4114 2N5626 2N5627 STP6003 2N4211 SILICON TRANSISTOR CORP STP515 2n5609 transistor 8E54022 FE20-120 2N4863 2N5662 N5664 STP2880

2N5606

Abstract: 2N5606 Dimensions in mm (inches). 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. VCEO = 60V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX
Semelab
Original
Abstract: 2N5606 Dimensions in mm (inches). 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. VCEO = 60V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX Semelab
Original

2n5430

Abstract: 2.0/0.2 2.0/0.2 2.0/0.2 lSÈài 2N5600 2N5602 2N5604 *2N5606 *2N5608 *2N5610 ` 2N5612 2N5660
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OCR Scan
2n5430 2N5429 2N5430

2N5626

Abstract: 2N4071 BIPOLAR < O PACKAGE P EA K DEVICE TYPE 2N4864 2N5598 2N5600 2N5602 2N5604 2N5606 2N5608 2N5610 2N5612 2N5661T 2N566J*' 2N5664*' 2H5665*' 2N5427 2N5428 2N5429 2N5430 bvceo TO-213 ( 10- 66 ) ·c VOLTS 120 60 80 80 100 60 80 80 100 200 300 200 300 80 80 100 100 AM PS 2.0 2.0 2.0 2.0 2.0 5.0 5.0 5.0 5.0 5.0 5.0 10.0 10.0 7.0 7.0 7.0 7.0 PEA K h FE m in / m a x 50-150 70-200 30-90 70-200 30-90 70-200 30-90 70-200 30-90 40-120 25-75 40-120 25-075 30-120 60-240 30-120 60-240 *C @ VCE A V 0.5/5.0
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OCR Scan
2N4071 2N6277 JANTXV T0-204 2N4070 2N5622 2N5624 2N5628

TO111

Abstract: 2N43 high-rei power transistors 84 SILICON NPN TRANSISTORS (5 Amp) BREAKDOWN VOLTAGE TYPE NUMBER 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232 2N4233 2N4300 2N4913 2N4914 2N4915 2N4998 2N5000 2N5148 2N5150 2N5427 2N5428 2N5429 2N5430 2N5598 2N5600 2N5602 2N5604 2N5606 2N5608 2N5610 2N5612 h FE CUTOFF CURRENT @ CASE SIZE TO-111 TO-111 TO-111 TO-111 TO-66 TO-66 TO-5 TO-111 TO-111 TO-111 TO-111 TO-111 TO-66 TO-66 TO-66 TO-5 TO-3 TO-3 TO-3 TO-111 TO-111 TO
Solitron Devices
Original
TO111 2N43 TO-111

2N5532

Abstract: 2N5076 200 2N5604 TO-66 120 100 6.0 30 90 5.0 1.0 .85 1.50 2.0 200 2N5606 TO-66 80 60 6.0 70 200 5.0 2.5 , 91 2N5604 5.00 60.0 84 2N5606 5.00 60.0 84 2N5608 5.00
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OCR Scan
2N5527 2N5531 SDR2710 SDR2712 2N5528 2N5529 2N5532 2N5076 2N5530 weight TO66 MT-27

2N3021

Abstract: 2N3025 -66 100 80 6 70 200 5 1 .85 1.5 2 .2 5 60 2N5604 TO-66 120 100 6 30 90 5 1 .85 1.5 2 .2 6 60 2N5606 TO
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OCR Scan
2N5002 2N5004 2N5074 2N5075 2N5077 2N5284 2N3021 2N3025 2N3026 TO111 package
Abstract: 20 20 2N5604 2N5605 2N5606 2N5607 2N5608 HI-REL HI-REL HI-REL HI-REL HI-REL NPN -
OCR Scan
A133167 Q00Q02S 2N5480 2N5490 2N5491 2N5492

2N5610

Abstract: PPC Products TO-3 CIP PPC PRODUCTS CORPORATION II SEMICONDUCTOR SPECIALIST NPN DEVICE CA5E BRE V VCB :AKDOV OLTAGE VCE VN S VEB VCE (V) hF >C (A) E Min. Max. SAT 'c (A) VOLTA >B (A) GES (Mi VCE (V) 3X.) VBE (V) 2N5606 TO-66 80 60 6 5 2.5 70 200 2.5 0.5 1.5 2 2N5610 TO-66 100 80 6 5 2.5 70 200 2.5 0.5 1.5 2 2N5612 TO-66 120 100 6 5 2.5 30 90 2.5 0.5 1.5 2 2N5614 TO-3 80 60 6 5 2.5 70 200 2.5 0.5 1.5 2 2N5616 TO-3 100 80 6 5 2.5 30 90 2.5 0.5 1.5 2 2N5618 TO-3 100 80 6 5 2.5 70 200 2.5 0.5 1.5 2 2 N 5620 TO-3 120
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OCR Scan
2N5629 2N5672 PPC Products TO-3 PPC Products TO-66 2N5630 2N5633 2N5658 2N5659 2N5663
Abstract: r DEVICE TYPE PACKAGE b v ceo le = 5.0 AMPS CONTINUED DATA < § > JZ VOLTS BV cbo VOLTS BVeb0 VOLTS P D@ 100°C WATTS lc Max. AMPS VcE VOLTS VcE(sat) @ lc VOLTS AMPS u AMPS Min. fr MHz IcBO @ Vcb /xAMP SHEET UJ LL VOLTS PG. NO. 2N4150 2N4240 2N4395 2N4396 2N4913 2N4914 2N4915 2N5152 2N5154 2N5237 2N5239 2N5336 2N5337 2N5338 2N5339 2N5487 2N5487-1 2N5488 2N5488-1 2N554Î 2N5606 2N5608 2N5610 2N5612 2N5729 2N6233 2N6234 2N6235 GSTU4030 GSTU4035 GSTU4040 XGSA3030 -
OCR Scan
XGSA3035 XGSA3040 XGSQ3030 XGSQ3035 XGSQ3040 XGSR3030

2N3025

Abstract: 2N3026 60 2N5604 TO-66 120 100 6 30 90 5 1 .85 1.5 2 .2 6 60 2N5606 TO-66 80 60 6 70 200 5 2.5 1.5 2.2 5 .5
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OCR Scan
2N5285 2N3023 2N5667 2N5804 2N5805 2N5838 2N5839

2N3025

Abstract: 2N3026 -66 100 80 6 70 200 5 1 .85 1.5 2 .2 5 60 2N5604 TO-66 120 100 6 30 90 5 1 .85 1.5 2 .2 6 60 2N5606 TO
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OCR Scan
2N3022 2N3024 2n316 2N5840 2N5970 2N3163 2N3164

2N3025

Abstract: 2N5339 2N5427 2N5428 2N5429 2N5430 2N5541 2N5598 2N5600 2N5602 2N5604 2N5606 2N5608 2N5610 2N5612 2N5614
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OCR Scan
2N5620 2N3165 2N3166
Abstract: SPACE POWER ELECTRONICS ST ]>E|fl4M03SS 0DDD105 fl | 7 3 3-« / s Hi-Rel PLANAR POWER - 5 AMP NPN TO-3 60W@T =100°C C 30W@T =100°C r C Breakdown Voltages TYPE 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232 2N4233 2N4300 2N4913 2N4914 2N4915 2N4998 2N5000 2N5083 2N5084 2N5085 2N5148 2N5150 2N5152 2N5154 2N5284 2N5285 2N5427 2N5428 2N5429 2N5430 2N5 5 98 2N5600 2N5602 2N5604 2N5606 2N5608 2N5610 2N5612 IPN= 8440355 0000103 0T5 h p E Space Power Electronics
Original
4M03SS 2N3171 2N3172 2N3173 2N3174 2N3175

2N5385

Abstract: 2NXXXX 2.0 100 TO-66 2N5604 NPN. 2.0 100 TO-66 2N5605 PNP 5.0 60 TO-66 2N5606 NPN 5.0 60 TO-66 2N5607 PNP
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OCR Scan
2N5348 2N5349 2N5384 2N5385 2N5386 2N5388 2NXXXX S5402

SPHV402

Abstract: 2N3853 SPACE POWER ELECTRONICS ST ]>E|fl4M03SS 0DDD105 fl | 7 3 3-« / s Hi-Rel PLANAR POWER - 5 AMP NPN TO-3 60W@T =100°C C 30W@T =100°C r C Breakdown Voltages TYPE 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232 2N4233 2N4300 2N4913 2N4914 2N4915 2N4998 2N5000 2N5083 2N5084 2N5085 2N5148 2N5150 2N5152 2N5154 2N5284 2N5285 2N5427 2N5428 2N5429 2N5430 2N5 5 98 2N5600 2N5602 2N5604 2N5606 2N5608 2N5610 2N5612 IPN= 8440355 0000103 0T5 h p E
Space Power Electronics
Original
SPHV402 SPHV400 SPHV401 SPHV403 SPHV404 SPHV415
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