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Part : 2N5550 Supplier : Central Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.1446 Price Each : $0.1579
Part : 2N5550TA Supplier : ON Semiconductor Manufacturer : Avnet Stock : 22,000 Best Price : $0.0202 Price Each : $0.0258
Part : 2N5550TAR Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.0172 Price Each : $0.0182
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Part : 2N5550TFR Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.0180 Price Each : $0.0191
Part : 2N5550 Supplier : NTE Electronics Manufacturer : Newark element14 Stock : 806 Best Price : $0.1710 Price Each : $0.2220
Part : 2N5550G. Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
Part : 2N5550TA Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : - Best Price : $0.0220 Price Each : $0.2370
Part : 2N5550 Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 15,023 Best Price : $0.04 Price Each : $0.05
Part : 2N5550/D26Z Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 34,000 Best Price : $0.02 Price Each : $0.02
Part : 2N5550BU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 13,454 Best Price : $0.03 Price Each : $0.04
Part : 2N5550G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 67,183 Best Price : $0.09 Price Each : $0.11
Part : 2N5550RLRA Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 18,000 Best Price : $0.04 Price Each : $0.05
Part : 2N5550RLRAG Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 12,000 Best Price : $0.04 Price Each : $0.05
Part : 2N5550RLRP Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 204,000 Best Price : $0.04 Price Each : $0.05
Part : 2N5550RLRPG Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 44,000 Best Price : $0.09 Price Each : $0.11
Part : 2N5550TA Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 88,815 Best Price : $0.03 Price Each : $0.04
Part : 2N5550 Supplier : ON Semiconductor Manufacturer : America II Electronics Stock : 4,000 Best Price : - Price Each : -
Part : 2N5550RLRA Supplier : ON Semiconductor Manufacturer : America II Electronics Stock : 31,399 Best Price : - Price Each : -
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Part : 2N5550 Supplier : - Manufacturer : Bristol Electronics Stock : 370 Best Price : $0.0375 Price Each : $0.0563
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Part : 2N5550 (D023) Supplier : Fairchild Semiconductor Manufacturer : Bristol Electronics Stock : 253 Best Price : - Price Each : -
Part : 2N5550RA Supplier : Fairchild Semiconductor Manufacturer : Bristol Electronics Stock : 2,000 Best Price : $0.0094 Price Each : $0.0563
Part : 2N5550TAR Supplier : Fairchild Semiconductor Manufacturer : Bristol Electronics Stock : 1,223 Best Price : - Price Each : -
Part : 2N5550TF Supplier : Fairchild Semiconductor Manufacturer : Bristol Electronics Stock : 1,000 Best Price : - Price Each : -
Part : 2N5550TFR Supplier : Fairchild Semiconductor Manufacturer : RS Components Stock : 2,200 Best Price : £0.0190 Price Each : £0.03
Part : 2N5550 Supplier : - Manufacturer : basicEparts Stock : 83 Best Price : - Price Each : -
Part : 2N5550 Supplier : Motorola Manufacturer : ComSIT Stock : 4,520 Best Price : - Price Each : -
Part : 2N5550G Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 111,911 Best Price : $0.5320 Price Each : $0.7030
Part : 2N5550RLRPG Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 30,000 Best Price : $0.2010 Price Each : $0.2010
Part : 2N5550TA Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 6,386 Best Price : $0.0322 Price Each : $0.0325
Part : 2N5550G. Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 647 Best Price : $0.05 Price Each : $0.4910
Part : 2N5550G. Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : - Best Price : £0.0561 Price Each : £0.1950
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2N5550 Datasheet

Part Manufacturer Description PDF Type
2N5550 Central Semiconductor Small Signal Transistors TO-92 Case (Continued) Original
2N5550 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original
2N5550 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
2N5550 Korea Electronics TRANS GP BJT NPN 140V 0.6A 3TO-92 Original
2N5550 On Semiconductor Amplifier Transistors NPN Silicon Original
2N5550 On Semiconductor Amplifier Transistor NPN Original
2N5550 On Semiconductor Amplifier Transistors NPN Original
2N5550 Philips Semiconductors NPN high-voltage transistors Original
2N5550 Philips Semiconductors Small-signal Transistors Original
2N5550 Continental Device India Semiconductor Device Data Book 1996 Scan
2N5550 Crimson Semiconductor Transistor Selection Guide Scan
2N5550 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan
2N5550 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N5550 Honey Technology 140 V, NPN silicon expitaxial planar transistor Scan
2N5550 Korea Electronics EPITAXIAL PLANAR NPN TRANSISTOR Scan
2N5550 Korea Electronics High Voltage Transistor Scan
2N5550 Micro Electronics High Voltage Transistors Scan
2N5550 Micro Electronics SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS Scan
2N5550 Micro Electronics Semiconductor Device Data Book Scan
2N5550 Micro Electronics Semiconductor Devices Scan
Showing first 20 results.

2N5550

Catalog Datasheet MFG & Type PDF Document Tags

2n5551

Abstract: 2N55551 2N5550, 2N5551 ORDERING INFORMATION Device 2N5550 2N5550RLRA 2N5550RLRP 2N5550RLRPG 2N5551 2N5551G , 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features · Pb-Free Packages are Available* · Device Marking: Device Type, e.g., 2N5550, Date Code http://onsemi.com , Symbol VCEO VCBO VEBO IC PD 2N5550 2N5551 140 160 6.0 600 625 5.0 1.5 12 - 55 to +150 160 180 Unit Vdc , June, 2004 - Rev. 3 109 Publication Order Number: 2N5550/D 2N5550, 2N5551 ELECTRICAL
ON Semiconductor
Original
2N55551 2N5551 circuit 1N914

2N5551

Abstract: 2N55551 ORDERING INFORMATION Device 2N5550 2N5550RLRA 2N5550RLRP 2N5550RLRPG 2N5551 2N5551RL1 2N5551RLRA , 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features · Pb-Free , Watts mW/°C °C 12 3 mW mW/°C TO-92 CASE 29 STYLE 1 2N5550 2N5551 140 160 6.0 600 160 180 Unit Vdc Vdc , May, 2004 - Rev. 2 Publication Order Number: 2N5550/D 2N5550, 2N5551 ELECTRICAL , 5.0 Vdc) hFE 2N5550 2N5551 2N5550 2N5551 2N5550 2N5551 VCE(sat) Both Types 2N5550 2N5551 VBE(sat) Both
ON Semiconductor
Original
ALL 2N5551 2N555 2N5550/D

2N5551

Abstract: 2N5550 2N5550, 2N5551 ORDERING INFORMATION Package Shipping 2N5550G TO-92 (Pb-Free) 5000 Units , 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features · These are , Value VCEO Vdc 140 160 2N5550 2N5551 Collector - Base Voltage VCBO 1 EMITTER Vdc 160 180 2N5550 2N5551 Emitter - Base Voltage 2 BASE Unit VEBO 6.0 Vdc , future use and best overall value. 2N5550, 2N5551 ELECTRICAL CHARACTERISTICS (TA = 25°C unless
ON Semiconductor
Original
2N55551ZL1G 2N5551 TO92 to-92 marking 2n5550 2N5551RL1G 2N5551RLRAG 2N5551RLRPG BRD8011/D

2N5551 circuit

Abstract: 2N5550 ON Semiconductort 2N5550 2N5551* Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector­Emitter , , IE = 0 ) V(BR)CEO 2N5550 2N5551 V(BR)CBO 2N5550 2N5551 Emitter­Base Breakdown Voltage (IE , ICBO 2N5550 2N5551 2N5550 2N5551 Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO µAdc , Industries, LLC, 2001 June, 2001 ­ Rev. 1 1 Publication Order Number: 2N5550/D 2N5550 2N5551
ON Semiconductor
Original
226AA

2N5551

Abstract: 2N5550 ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage , ST 2N5550 VCEO 140 V ST 2N5551 VCEO 160 V ST 2N5550 VCBO 160 V ST , Hong Kong Stock Exchange, Stock Code: 724) R Dated : 29/04/2004 ST 2N5550 / 2N5551 , - - V V V(BR)EBO at VCE=5V, IC=50mA Max. ST 2N5550 at VCE=5V, IC=10mA Typ. ST 2N5550 ST 2N5551 DC Current Gain at VCE=5V, IC=1mA Min. 6 - - V ST 2N5550
Semtech Electronics
Original
2N5400 2N5401 100MH

2n5551

Abstract: 2N5550 ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage , Unit ST 2N5550 VCEO 140 V ST 2N5551 VCEO 160 V ST 2N5550 VCBO 160 V , /04/2004 ST 2N5550 / 2N5551 Characteristics at Tamb=25 oC Symbol Unit hFE hFE hFE hFE , =50mA Max. ST 2N5550 at VCE=5V, IC=10mA Typ. ST 2N5550 ST 2N5551 DC Current Gain at VCE=5V, IC=1mA Min. 6 - - V ST 2N5550 ST 2N5551 ST 2N5550 ST 2N5551 ST 2N5550 ST
Semtech Electronics
Original
transistor equivalent 2n5551

2N55551

Abstract: 2N5551 ,000 Unit / Bulk 2N5550RLRA TO-92 2,000 Tape & Reel 2N5550RLRP TO-92 2,000 Tape & , 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features · Pb-Free Packages are Available* · Device Marking: Device Type, e.g., 2N5550, Date Code http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector - Emitter , . © Semiconductor Components Industries, LLC, 2004 June, 2004 - Rev. 3 1 Publication Order Number: 2N5550
ON Semiconductor
Original
2N55551ZL1 2N5551RLRM 2N5551 DATA ALL+2N5551

2N55551ZL1

Abstract: 2N5550G 2N5550, 2N5551 ORDERING INFORMATION Package Shipping 2N5550G TO-92 (Pb-Free) 5000 Units , 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features · These are , Emitter Voltage Value VCEO 2N5550 2N5551 Collector - Base Voltage Vdc 140 160 VCBO 2N5550 2N5551 Emitter - Base Voltage 2 BASE Unit 1 EMITTER Vdc 160 180 VEBO 6.0 , overall value. Publication Order Number: 2N5550/D 2N5550, 2N5551 ELECTRICAL CHARACTERISTICS (TA =
ON Semiconductor
Original
C2N5550

C2N5550

Abstract: 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage , ST 2N5550 VCEO 140 V ST 2N5551 VCEO 160 V ST 2N5550 VCBO 160 V ST , A IS AVAILABLE mW C C 2N5550 / 2N5551 Characteristics at Tamb=25 oC Symbol DC Current , hFE hFE hFE hFE hFE 60 80 60 80 20 30 - 250 250 - - ST 2N5550 ST 2N5551 V(BR)CEO V(BR)CEO 140 160 - - V V ST 2N5550 V(BR)CBO V(BR)CBO 160 180 -
Bytes
Original

2n5551

Abstract: 2n5550 package. PNP complements: 2N5400 and 2N5401. PINNING PIN 1 2 3 collector base emitter 2N5550; 2N5551 , REFERENCE DATA SYMBOL VcBO PARAMETER collector-base voltage 2N5550 2N5551 VCEO CONDITIONS open emitter , collector-emitter voltage 2N5550 2N5551 peak collector current total power dissipation DC current gain ·c m mA mW Ptc hFE 60 80 lc = 10 mA; VC E= 5 V 2N5550 2N5551 Co collector capacitance , 2N5550; 2N5551 PARAMETER collector-base voltage 2N5550 2N5551 collector-emitter voltage 2N5550 2N5551
-
OCR Scan
transistor 2n5551 AM279

2N555

Abstract: 5401 2N5400 2N5401 2N5550 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 1 THE 2N5400, 2N5401 (PNP) AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL , ) 2N5401 (NPN) 2N5550 (NPN) 2N5551 Collector-Base Voltage vCB0 150 V 160V 160V 180V Collector-Emitter , , Emitter Cutoff Current IEBO 2N5400, 5401 50 nA VEB=3V IC-O 2N5550, 5551 50 nA VEB=4V IC , =50mA lB=5aA i IC=50mA lB=5mA IC=50mA lB=5mA Base-Emitter Saturation Voltage All types 2N5400, 5401 2N5550
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OCR Scan
1000C 5401 transistor 2N 5551 555-1 5551 transistor 2N5401 2N5401 MICRO ELECTRONICS VCB-120V IC-10 2F5550 VCB-10V
Abstract: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 1 CASE TO-92A THE 2N5400, 2N5401 (PNP) AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON , t » a l u « »r« n e q a l.v e ««» (PNP) 2N5401 (NPN) 2N5550 (NPN) 2N5551 , . UNIT i 2N5401, 5551 Emitter Cutoff Current 2N5400, 5401 2N5550, 5551 MAX TEST CONDITIONS , dB dB Ra=lKA f=10Hz-15KHz TEST CONDITIONS VCE(sat) 2N5400, 5401 2N-5550 2N5551 -
OCR Scan
0710B 7100B

2N5551

Abstract: 100 200 2N5550, 2N5551 ORDERING INFORMATION Package Shippingâ'  2N5550G TOâ , 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features â'¢ These are , ' Emitter Voltage Value VCEO 2N5550 2N5551 Collector â' Base Voltage Vdc 140 160 1 EMITTER VCBO Vdc 160 180 2N5550 2N5551 Emitter â' Base Voltage 2 BASE Unit VEBO , : 2N5550/D 2N5550, 2N5551 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted
ON Semiconductor
Original

2N5551

Abstract: 2N5550 ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage , Symbol Value Unit Collector Emitter Voltage ST 2N5550 ST 2N5551 VCEO VCEO 140 160 V V Collector Base Voltage ST 2N5550 ST 2N5551 VCBO VCBO 160 180 V V VEBO , company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 10/05/2006 ST 2N5550 , ST 2N5550 V(BR)CBO ST 2N5551 V(BR)CBO at VCE = 5 V, IC = 10 mA Symbol ST 2N5550 V(BR)CEO
Semtech Electronics
Original
st 2n5551 st2n5551 transistor 2n5550 2n5551 datasheet equivalent 2n5551 st2n5401

2n5551

Abstract: 2N5550 issipation Derate above 2 5 X (a 2N5550 2N5551* Sym bol VCEO v CBO v EBO 'c Pd Pd TJ ' T stg 2N5550 140 , a = 100D Cl 0. T a = 100X1 2N5550 2N5551 2N5550 2N5551 lEBO v (BRICEO 2N5550 2N5551 v IBR|CBO 2N5550 , Adc, V çg = 5.0 Vdc) h FE 2N5550 2N5551 2N5550 2N5551 2N5550 2N5551 v CE(sat) Both Types 2N5550 2N5551 v BE(sat) Both Types 2N5550 2N5551 - 1.0 1.2 1.0 - _ - 0.15 0.25 0.20 60 80 60 80 20 30 - - , SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 2N5550, 2N5551 ELECTRICAL CHARACTERISTICS (continued) (Ta = 25
-
OCR Scan

2N5551 circuit

Abstract: transistor equivalent 2n5551 2N5550G 2N5550RLRA 2N5550RLRAG 2N5550RLRP 2N5550RLRPG 2N5551 2N5551G 2N5551RL1 Package , 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features · Pb-Free , Collector - Emitter Voltage Value Unit VCEO 2N5550 2N5551 Collector - Base Voltage 140 160 VCBO 2N5550 2N5551 Emitter - Base Voltage 2 BASE Vdc 1 EMITTER Vdc 160 180 VEBO , . © Semiconductor Components Industries, LLC, 2006 March, 2006 - Rev. 4 1 Publication Order Number: 2N5550
ON Semiconductor
Original

2N5551

Abstract: 2N5551 circuit MOTOROLA Order this document by 2N5550/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N5551* NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector ­ Emitter Voltage , ) Collector ­ Base Breakdown Voltage (IC = 100 µAdc, IE = 0 ) V(BR)CEO 2N5550 2N5551 V(BR)CBO 2N5550 , = 100°C) Vdc V(BR)EBO Vdc ICBO 2N5550 2N5551 2N5550 2N5551 Emitter Cutoff Current
Motorola
Original
motorola 1N914 diode datasheet 2N5551 motorola 2N5551 diodes inc

TRANSISTOR 2N5550

Abstract: 2N5551 DATA DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage , Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES PINNING · Low , .1 Simplified outline (TO-92; SOT54) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME 2N5550 , - 160 V - 180 V 2N5550 - 140 V 2N5551 - 160 V 2N5550 , Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551
Philips Semiconductors
Original
SC-43A MAM279 SCA76 R75/04/

2N5551

Abstract: 2N5550 ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage , Symbol Value Unit Collector Emitter Voltage ST 2N5550 ST 2N5551 VCEO VCEO 140 160 V V Collector Base Voltage ST 2N5550 ST 2N5551 VCBO VCBO 160 180 V V VEBO , company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 10/05/2006 ST 2N5550 , ST 2N5550 V(BR)CBO ST 2N5551 V(BR)CBO at VCE = 5 V, IC = 10 mA Symbol ST 2N5550 V(BR)CEO
Semtech Electronics
Original
OF 2n5550 hz15 st 25 a

2N5551

Abstract: 2N5550 ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage , ST 2N5550 VCEO 140 V ST 2N5551 VCEO 160 V ST 2N5550 VCBO 160 V ST , ST 2N5550 / 2N5551 Characteristics at Tamb=25 oC Symbol Unit hFE hFE hFE hFE hFE hFE , 2N5550 at VCE=5V, IC=10mA Typ. ST 2N5550 ST 2N5551 DC Current Gain at VCE=5V, IC=1mA Min. 6 - - V ST 2N5550 ST 2N5551 ST 2N5550 ST 2N5551 ST 2N5550 ST 2N5551 Collector
Semtech Electronics
Original
ic CD4081 pin diagram datasheet

transistor 2N 5551

Abstract: 5551 transistor , lc = 10 mA HN / 2N 5550 HN/2N 5551 at VCE = 5V, lc = 50 mA HN/2N5550 HN/2N 5551 hFE hFE hfe hpe hpe , /2N5550 HN/2N5551 ^(br)cbo (br)cbo 160 180 - V V Emitter Base Breakdown Voltage at lE = 10 ^A ^(br)ebo 6
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OCR Scan
5551 transistor BR 5551 transistor 5551 BR 5550 2n 5551 transistor 5551 npn HN/2N5550

2N5550

Abstract: 5551 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon COLLECTOR 3 2N5550 , Symbol VCEO V C BO vebo 2N5550 140 160 6.0 2N5551 160 180 Unit Vdc Vdc V dc m A dc mW m W , 2N5550 2N5551 ELECTRICAL CHARACTERISTICS (TA = 2 5 °C unless oth e rw is e noted) (C ontinued , Device Data 2N5550 2NS551 hFE, D C CURRENT GAIN IC, COLLECTOR CURRENT (mA) Figure 1. DC , Saturation Region Motorola Small-Signal Transistors, FETs and Diodes Device Data 2-61 2N5550 2NSS51
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OCR Scan
2n 5551 2NS851

2N5551 diodes inc

Abstract: 2n5551 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5550/D Amplifier Transistors NPN Silicon 2N5550 2N 5551* COLLECTOR 3 MAXIMUM RATINGS Rating C o lle c to r-E m itte r , 2N5550 140 160 2N5551 160 180 Unit Vdc Vdc Vdc mAdc mW m W /°C W atts m W /°C °C 6.0 600 625 , -© M otorola, Inc. 1996 fM ) M O T O R O L A x_- 2N5550 2N5551 ELECTRICAL CHARACTERISTICS , Transistors, FETs and Diodes Device Data 2N5550 2N5551 h FE, D C CURRENT GAIN lC, COLLECTOR CURRENT
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OCR Scan
Abstract: DISCRETE SEMICONDUCTORS 2N5550; 2N5551 NPN high-voltage transistors Product specification , High voltage (max. 160 V). 2N5550; 2N5551 PINNING PIN 1 2 co lle cto r base em itter , SYMBOL Rth j-a 2N5550; 2N5551 PARAMETER therm al resistance from ju nction to am bient VALUE , transistors 2N5550; 2N5551 1999 A pr 23 4 Philips S em iconductors Product specification , leads 2N5550; 2N5551 SOT54 1 I - 0 2.5 I I I I 5 mm I I I I 1 I -
OCR Scan

BT 812

Abstract: 2N5401. QUICK REFERENCE DATA 2N5550 Collector-base voltage (open emitter) v CB0 max , bT E D â  bbSB'm 0DEfll75 TE b 2N5550 2N5551 _ y , 134) 2N5550 Collector-base voltage (open emitter) 2N5551 v CBO max. Collector-emitter , 2N5550 2N5551 100 50 100 nA nA mA 50 juA 50 50 nA min. min. min. 140
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OCR Scan
BT 812 S3T31 DD2A17M MBB01S NECC-C-002 53T31 N5550
Showing first 20 results.