Datasheet Search Results			1 - 50 of about 58 for 2N5550
	2N5550	Central Semiconductor	Small Signal Transistors TO-92 Case (Continued)	57.81 Kb,  1 Pages.
	2N5550	Continental Device India Limited	Semiconductor Device Data Book 1996	101.15 Kb,  1 Pages.
	2N5550	Crimson Semiconductor	Transistor Selection Guide	1453.37 Kb,  36 Pages.
	2N5550	Fairchild Semiconductor	NPN EPITAXIAL SILICON TRANSISTOR	27.4 Kb,  2 Pages.
	2N5550	Fairchild Semiconductor	NPN EPITAXIAL SILICON TRANSISTOR	29.54 Kb,  1 Pages.
	2N5550	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	45.62 Kb,  1 Pages.
	2N5550	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor	65.7 Kb,  3 Pages.
	2N5550	Honey Technology	140 V, NPN silicon expitaxial planar transistor	129.8 Kb,  2 Pages.
	2N5550	Korea Electronics	High Voltage Transistor	150.74 Kb,  2 Pages.
	2N5550	Korea Electronics	EPITAXIAL PLANAR NPN TRANSISTOR	142.75 Kb,  2 Pages.
	2N5550	Korea Electronics	TRANS GP BJT NPN 140V 0.6A 3TO-92	64.15 Kb,  2 Pages.
	2N5550	Micro Electronics	Semiconductor Devices	49.59 Kb,  1 Pages.
	2N5550	Micro Electronics	High Voltage Transistors	102.75 Kb,  1 Pages.
	2N5550	Micro Electronics	SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS	165.68 Kb,  2 Pages.
	2N5550	Micro Electronics	Semiconductor Device Data Book	55.26 Kb,  1 Pages.
	2N5550	Motorola	European Master Selection Guide 1986	51.87 Kb,  1 Pages.
	2N5550	Motorola	The European Selection Data Book 1976	67.84 Kb,  2 Pages.
	2N5550	National Semiconductor	General Purpose Amplifiers and Switches	523.11 Kb,  16 Pages.
	2N5550	National Semiconductor	NPN Transistors	666.62 Kb,  17 Pages.
	2N5550	National Semiconductor	High Voltage Amplifier	67.3 Kb,  1 Pages.
	2N5550	On Semiconductor	Amplifier Transistors NPN	68.39 Kb,  8 Pages.
	2N5550	On Semiconductor	Amplifier Transistor NPN	187.24 Kb,  6 Pages.
	2N5550	On Semiconductor	Amplifier Transistors NPN Silicon	85.07 Kb,  6 Pages.
	2N5550	Philips Semiconductors / NXP Semiconductors	NPN high-voltage transistors	44.26 Kb,  8 Pages.
	2N5550	Philips Semiconductors / NXP Semiconductors	Small-signal Transistors	4.29 Kb,  1 Pages.
	2N5550	Philips Semiconductors / NXP Semiconductors	NPN High-Voltage Transistor	56.51 Kb,  3 Pages.
	2N5550	Samsung Electronics	NPN EPITAXIAL SILICON TRANSISTOR	34.34 Kb,  1 Pages.
	2N5550	Samsung Electronics	NPN EPITAXIAL SILICON TRANSISTOR	34.88 Kb,  1 Pages.
	2N5550	Semiconductors, Inc.	High Voltage Transistors	282.75 Kb,  4 Pages.
	2N5550	Semtech	NPN Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications	129.81 Kb,  2 Pages.
	2N5550	Sprague	Small Signal TO-92 Plastic Transistors	370.91 Kb,  5 Pages.
	2N5550	Sprague	Semiconductor Data Book 1977	68.23 Kb,  1 Pages.
	2N5550	Thomson-CSF	Condensed Data Book 1977	38.05 Kb,  1 Pages.
	2N5550	Thomson-CSF	Shortform Semiconductor Catalogue 1982	229.32 Kb,  2 Pages.
	2N5550	Usha Ltd.	Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW.	33.98 Kb,  1 Pages.
	2N5550	Zetex Semiconductors	Quick Reference Guide (Discrete Semiconductors) 1991	51.98 Kb,  1 Pages.
	2N5550	N/A	Shortform Data and Cross References (Misc Datasheets)	38.13 Kb,  1 Pages.
	2N5550	N/A	Shortform Transistor Datasheet Guide	89.74 Kb,  1 Pages.
	2N5550	N/A	Shortform IC and Component Datasheets (Plus Cross Reference Data)	102.14 Kb,  1 Pages.
	2N5550	N/A	Semiconductor Master Cross Reference Guide	112.43 Kb,  1 Pages.
	2N5550BU	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor	65.72 Kb,  3 Pages.
	2N5550-D	On Semiconductor	Amplifier Transistors NPN Silicon	68.38 Kb,  8 Pages.
	2N5550_D26Z	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor	65.72 Kb,  3 Pages.
	2N5550G	On Semiconductor	High Voltage Transistor NPN	81.2 Kb,  6 Pages.
	2N5550_J24Z	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor	65.72 Kb,  3 Pages.
	2N5550RLRA	On Semiconductor	High Voltage Transistor NPN	71.6 Kb,  6 Pages.
	2N5550RLRAG	On Semiconductor	High Voltage Transistor NPN	81.2 Kb,  6 Pages.
	2N5550RLRP	On Semiconductor	High Voltage Transistor NPN	71.61 Kb,  6 Pages.
	2N5550RLRPG	On Semiconductor	High Voltage Transistor NPN	71.61 Kb,  6 Pages.
	2N5550S	Korea Electronics	TRANS GP BJT NPN 140V 0.6A 3SOT-23	65.68 Kb,  2 Pages.
	Datasheets per page:  50 | 250 | 500

Fulltext Datasheet Results		1 - 50 of about 149 for 2N5550
	First line: MARKING SPECIFICATION 2N5550 TO-92 PACKAGE Abstract: .. SEMICONDUCTOR 2N5550. 5550. 3 K 816. 2N 1. 2. 4. 1998. 6. 23 1/1. MARKING SPECIFICATION TO-92 TO-92 PACKAGE ..  Tags: 5550  2n series   2N5550	22.8 Kb	1 Pages	Original
	First line: 2N5551 equivalent 2N5551 transistor equivalent 2n5551 2N5550 2N5551 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5400 2N5401 recommended. special request, these transistors manufactured different configurations. Abstract: .. ST 2N5550 / 2N5551 2N5551 . NPN Silicon Epitaxial Planar Transistors. for general purpose, high voltage amplifier. applications. As complementary types the PNP transistors. ST 2N5400 2N5400 and ST 2N5401 2N5401 are ..  Tags: transistor equivalent 2n5551 2N5551 equivalent diode 2N5401  2N5551  2N5401   2N5550 2N5551 2N5400 2N5401	223.8 Kb	3 Pages	Original
	First line: 2N5551 transistor equivalent 2n5551 2N5550 2N5551 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5400 2N5401 recommended. special request, these transistors manufactured different configurations. Abstract: .. ST 2N5550 / 2N5551 2N5551 . NPN Silicon Epitaxial Planar Transistors. for general purpose, high voltage amplifier. applications. As complementary types the PNP transistors. ST 2N5400 2N5400 and ST 2N5401 2N5401 are ..  Tags: transistor equivalent 2n5551 diode 2N5401  2n5551   2N5550 2N5551 2N5400 2N5401	229.35 Kb	3 Pages	Original
	First line: 2N5550 2N5551 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5400 2N5401 recommended. special request, these transistors manufactured different configurations. Abstract: .. ST 2N5550 / 2N5551 2N5551 . NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 2N5400 and ST 2N5401 2N5401 are ..  Tags: diode 2N5401  2n5551   2N5550 2N5551 2N5400 2N5401	235.14 Kb	2 Pages	Original
	First line: ic CD4081 pin diagram datasheet 2N5550 2N5551 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5400 2N5401 recommended. special request, these transistors manufactured different configurations. Absolute Maximum Ratings 25oC) Abstract: .. ST 2N5550 / 2N5551 2N5551 . NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 2N5400 and ST 2N5401 2N5401 are ..  Tags: ic CD4081 pin diagram datasheet diode 2N5401  2N5551  2N5401   2N5550 2N5551 2N5400 2N5401	217.02 Kb	2 Pages	Original
	First line: 2N5550 2N5551 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5400 2N5401 recommended. special request, these transistors manufactured different configurations. Absolute Maximum Ratings 25oC) Symbol Collector Emitter Voltag Abstract: .. ST 2N5550 / 2N5551 2N5551 . NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 2N5400 and ST 2N5401 2N5401 are ..  Tags: diode 2N5401  2N5551   2N5550 2N5551 2N5400 2N5401	184.49 Kb	2 Pages	Original
	First line: 2N5551 circuit 2N5550 2N5551 2N5550 2N5551 Version 2006-06-17 Power dissipation Verlustleistung Abstract: .. 2N5550 / 2N5551 2N5551 NPN General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN Version 2006-06-17 Dimensions - Maße [mm] Power ..  Tags: 2N5551 circuit 2N5551  2N5401   2N5550 2N5551	102.38 Kb	2 Pages	Original
	First line: 2N5550 Amplifier Transistors 2N5550 2N5551* Abstract: .. Amplifier Transistors NPN Silicon. MAXIMUM RATINGS. Rating Symbol 2N5550 2N5551 2N5551 Unit. Collector‐Emitter Voltage VCEO 140 160 Vdc. Collector‐Base Voltage VCBO 160 180 Vdc. Emitter‐Base Voltage ..  Tags: 2N5550 2N5551   2N5550 2N5551	68.38 Kb	8 Pages	Original
	First line: transistor 2N 5551 2N5400 2N540 2N5550 2N555 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 2N5400, 2N540 (PNP) 2N5550, 2N555 (NPN) COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER SWITCHING APPLICATIONS. CASE TO-92A ABSOLUTE MAXIMUM Abstract: .. 2N5400 2N5400 2N5401 2N5401 2N5550 2N5551 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 1 THE 2N5400 2N5400 , 2N5401 2N5401 PNP AND 2N5550, 2N5551 2N5551 NPN ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL ..  Tags: transistor 2N 5551   datasheet abstract..	184.18 Kb	2 Pages	OCR Scan
	First line: I1ER PHILIPS/DISCRETE bb53cl31 0D2fll74 2N5550 2N5551 SILICON N-P-N HIGH-VOLTGE TRNSISTORS N-P-N high-voltage small-signal transistors general purposes especially telephony applications encapsulated TO-92 envelope. P-N-P complements 2N5400 2N5401. QUICK REFERENCE Abstract: .. N AI1ER PHILIPS/DISCRETE I 1 LTE D â– bb53cl31 bb53cl31 0D2fll74 0D2fll74 CHT I 2N5550 2N5551 2N5551 IAPX A SILICON N-P-N HIGH-VOLTAGE TRANSISTORS N-P-N high-voltage small-signal transistors for general purposes and ..  Tags:   datasheet abstract..	75.08 Kb	3 Pages	OCR Scan
	First line: book, halfpage M3D186 Abstract: .. 2N5550; 2N5551 2N5551 NPN high-voltage transistors book, halfpage M3D186 M3D186 2004 Oct 28 2 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 2N5551 FEATURES ..  Tags: 2N5551  13548   datasheet abstract..	47.42 Kb	7 Pages	Original
	First line: 2N5550, 2N5551 Amplifier Transistors Abstract: .. 2N5550/D. 2N5550, 2N5551 2N5551 Preferred Device. Amplifier Transistors NPN Silicon. Features. • Pb Free Packages are Available* MAXIMUM RATINGS. Rating Symbol Value Unit. Collector Emitter Voltage ..  Tags: 2N5551   2N5550 2N5551	81.19 Kb	6 Pages	Original
	First line: 2N5550, 2N5551 Amplifier Transistors Abstract: .. 2N5550/D. 2N5550, 2N5551 2N5551 Preferred Device. Amplifier Transistors NPN Silicon. Features. ∞ Pb-Free Packages are Available* ∞ Device Marking: Device Type, e.g., 2N5550, Date Code. MAXIMUM RATINGS ..  Tags: 2N5551   2N5550 2N5551	71.6 Kb	6 Pages	Original
	First line: diodes inc 2N5551 book, halfpage M3D186 Abstract: .. 2N5550; 2N5551 2N5551 NPN high-voltage transistors book, halfpage M3D186 M3D186 1999 Apr 23 2 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 2N5551 FEATURES ..  Tags: diodes inc 2N5551 2N5551   datasheet abstract..	47.04 Kb	8 Pages	Original
	First line: 2N5551G 2N5550, 2N5551 Amplifier Transistors Abstract: .. 2N5550/D. 2N5550, 2N5551 2N5551 Preferred Device. Amplifier Transistors NPN Silicon. Features. • These are Pb Free Devices* MAXIMUM RATINGS. Rating Symbol Value Unit. Collector Emitter Voltage 2N5550 ..  Tags: 2N5551G  2N5551   2N5550 2N5551	85.09 Kb	6 Pages	Original
	First line: MPSA92 datasheet 2N5401 Small-signal Transistors LEADED DEVICES (continued) HIGH-VOLTAGE LOW-POWER TRANSISTORS TYPE NUMBER 2N5550 2N5551 BF420L BF422L MPSA42 MPSA43 MPSA44 MPSA45 PN3439 PN3440 PACKAGE TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 VCEO max. max. (mA) Ptot max. (mW) min. Abstract: .. 2N5550 TO-92 TO-92 140 300 630 60 >60 100 2N5400 2N5400 184. 2N5551 2N5551 TO-92 TO-92 160 300 630 80 >80 100 2N5401 2N5401 184. BF420L BF420L TO-92 TO-92 300 50 625 50 >50 60 BF421L BF421L 536. BF422L BF422L TO-92 TO-92 250 50 625 50 >50 60 BF423L BF423L 536. MPSA42 MPSA42 TO-92 TO-92 300 100 ..  Tags: MPSA92 datasheet MPSA93  MPSA42  diode 2N5401  630-60  2N5551  2N5401   2N5550 2N5551	4.27 Kb	1 Pages	Original
	First line: TO-92 Plastic-Encapsulate Transistors 2N5550 TRANSISTOR (NPN) TO-92 Abstract: .. 2N5550 TRANSISTOR NPN FEATURES z Switching and amplification in high voltage z Applications such as telephony z Low current max. 600mA 600mA z High voltage max.160V 160V MAXIMUM RATINGS TA ..  Tags:   2N5550	124.76 Kb	2 Pages	Original
	First line: Order this document 2N5550/D Amplifier Transistors Abstract: .. Rating Symbol 2N5550 2N5551 2N5551 Unit. Collector ‐ Emitter Voltage VCEO 140 160 Vdc. Collector ‐ Base Voltage VCBO 160 180 Vdc. Emitter ‐ Base Voltage VEBO 6.0 Vdc. Collector Current — Continuous IC 600 mAdc ..  Tags: 2N5551 MOTOROLA  2N5551   2N5550	187.24 Kb	6 Pages	Original
	First line: str 6707 datasheet diodes inc 2N5551 transistor equivalent 2n5551 book, halfpage M3D186 Abstract: .. 2N5550; 2N5551 2N5551 NPN high-voltage transistors book, halfpage M3D186 M3D186 1997 Apr 09 2 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 2N5551 FEATURES ..  Tags: transistor equivalent 2n5551 diodes inc 2N5551 str 6707 datasheet 2N5551   datasheet abstract..	66.35 Kb	8 Pages	Original
	First line: GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. Abstract: .. 2N5550. * Pulse Test : Pulse Width# 300 Ã S, Duty Cycle# 2%. CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT. Collector Cut-off Current ICBO. VCB=100V 100V , IE=0 - - 100 nA. VCB=100V 100V , IE=0, Ta ..  Tags:   datasheet abstract..	64.15 Kb	2 Pages	Original
	First line: GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. Abstract: .. 2N5550. * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT. Collector Cut-off Current ICBO. VCB=100V 100V , IE=0 - - 100 nA. VCB=100V 100V , IE=0, Ta=100 ..  Tags:   2N5550	30.16 Kb	2 Pages	Original
	First line: 2N5550 RoHS Compliant Product suffix "-C" specifies halogen lead-free Plastic Encapsulated Transistor Abstract: .. Elektronische Bauelemente. 2N5550 0.6 A, 160 V. NPN Plastic Encapsulated Transistor. 8-Mar-2010 8-Mar-2010 Rev. A Page 1 of 2. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed ..  Tags:   2N5550	122.17 Kb	2 Pages	Original
	First line: SEMICONDUCTOR 2N5550 TECHNICAL DATA EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. High Collector Breakdwon Voltage Vcbo=160V Vceo=140V Leakage Current. Icbo=100nA(Max.), Vcb=100V Saturation Voltage Abstract: .. KEC SEMICONDUCTOR 2N5550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES †� High Collector Breakdwon Voltage : Vcbo=160V 160V ..  Tags:   datasheet abstract..	169.69 Kb	2 Pages	OCR Scan
	First line: SEMICONDUCTOR KOREA ELECTRONICS CO.,LTD. TECHNICAL DATA 2N5550 EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. High Collector Breakdwon Voltage Vcbo=160V, VCeo=140V Leakage Current. Abstract: .. _ SEMICONDUCTOR KOREA ELECTRONICS CO.,LTD. TECHNICAL DATA 2N5550 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES * High Collector Breakdwon ..  Tags:   datasheet abstract..	161.87 Kb	2 Pages	OCR Scan
	First line: 2N5550 AMPLIFIER TRANSISTOR Collector-Emitter Voltage: VCEo= 140V Collector Dissipation: Pc(max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage Vobo Collector-Emitter Voltage Vceo Abstract: .. 2N5550 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR †� Collector-Emitter Voltage: VCEo= 140V 140V †� Collector Dissipation: Pc max =625mW 625mW ABSOLUTE MAXIMUM RATINGS TA=25 �C Characteristic ..  Tags:   datasheet abstract..	48.03 Kb	1 Pages	OCR Scan
	First line: 2N6719 High VoltageAmplifiers bSQ1130 OOBiSaE bfll NSCS NATL SEHICOND (DISCRETE VCEO<sust) (Volts) Device (mA) hFE@lc VcEfsat) (MHz) Package (Amb) (mW) (mA) (Volts) (mA) (mA) 2N6719 TO-237(91 MMBTA42 TO-236* MPSA42 TO-92(92) MMBTA92 TO-236* Abstract: .. 10 0.5 50 5.0 100 TO-92 TO-92 92 625 MMBT5401 MMBT5401 600 60 10 0.5 50 5.0 100 TO-236 TO-236 * 350 140 2N5550 600 60 10 0.25 50 5.0 100 TO-92 TO-92 92 350 MMBT5550 MMBT5550 600 60 10 0.25 50 5.0 100 TO-236 TO-236 * 350 120 2N5400 2N5400 600 40 10 0.5 50 5.0 ..  Tags: 2N6719   datasheet abstract..	85.8 Kb	1 Pages	OCR Scan
	First line: 2N5550 AMPLIFIER TRANSISTOR Collector-Emitter Voltage: Veto =140V Collector Dissipation: (max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Vbltage VcBO Collector-Emitter Voltage Vceo Abstract: .. 2N5550 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR * Collector-Emitter Voltage: Veto =140V 140V †� Collector Dissipation: Pc max =625mW 625mW ABSOLUTE MAXIMUM RATINGS Ta =25 �C Characteristic ..  Tags:   datasheet abstract..	53.38 Kb	1 Pages	OCR Scan
	First line: 2n5551 samsung SAMSUNG SEMICONDUCTOR 7^4142 0007ia? 2N5550 EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Collector-Emitter Voltage: Vceo=140V Collector Dissipation: (max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Vbltage VcBO Collector-Emitter \fcltage VcEO Abstract: .. SAMSUNG SEMICONDUCTOR INC 14E D | 7^4142 0007ia 0007ia 0 | 2N5550 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR †� Collector-Emitter Voltage: Vceo=140V 140V †� Collector Dissipation: Pc max ..  Tags: 2n5551 samsung   datasheet abstract..	52.82 Kb	1 Pages	OCR Scan
	First line: 2N5550 USHA (INDIA) AMPLIFIER TRANSISTOR Collector-Emitter Voltage: V&t>= 140V Collector Dissipation; (max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage Veso Abstract: .. Transistors 2N5550 USHA INDIA LTD AMPLIFIER TRANSISTOR †� Collector-Emitter Voltage: V&t>= 140V 140V  � Collector Dissipation; Pc max =625mW 625mW ABSOLUTE MAXIMUM RATINGS Ta =25ÖC Characteristic ..  Tags:   datasheet abstract..	52.49 Kb	1 Pages	OCR Scan
	First line: EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5550 TO-92 Plastic Package Abstract: .. NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5550. TO-92 TO-92 Plastic Package. High Voltage NPN Transistor For General Purpose and Telephony Applications. ABSOLUTE MAXIMUM RATINGS Ta ..  Tags:   2N5550	145.42 Kb	4 Pages	Original
	First line: EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5550 TO-92 Plastic Package Abstract: .. NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5550. TO-92 TO-92 Plastic Package. High Voltage NPN Transistor For General Purpose and Telephony Applications. ABSOLUTE MAXIMUM RATINGS Ta ..  Tags:   2N5550	153.77 Kb	4 Pages	Original
	First line: TABLE NPN/PNP HIGH VOLTAGE TRANSISTORS transistors shown this table designed driving numerical indicator tubes, neon lamps other applications requiring high voltage capability. Type VCBO Vceo VCE(sat) Pto. "l"amb Complement ZTX658 1000 ZTX758 ZTX458 1000 ZTX558 ZTX6575 1000 ZTX757 MPSA425 Abstract: .. .1 125 1000 ZTX755 ZTX755 ZTX4555 ZTX4555 160 140 1000 0.7 150 15 100 300 150 0.1 140 1000 ZTX555 ZTX555 2N5550 160 140 600 0.25 50 5 60 250 10 0.1 100 350 2N5400 2N5400 ZTX654 ZTX654 125 125 1000 0.5 1000 200 50 500 0.1 100 1000 ZTX754 ZTX754 ZTX454 ZTX454 ..  Tags:   datasheet abstract..	70.47 Kb	1 Pages	OCR Scan
	First line: MPSA25 HIGH VOLTAGE TRANSISTORS TYPE bvceq (mA) rnlir (mA) VCE(sat) (mA) min' (MHz) (mA) 2N3439 TO-39 1000 0.50 2N344Q TO-39 1000 0.50 2N5550 TO-92 0.25 2N5551 TO-92 0.20 MPSA42 TO-92 0.50 Abstract: .. -39 350 1000 30 20 0.50 50 70 10 2N344Q 2N344Q TO-39 TO-39 250 1000 40 20 0.50 50 70 1Q 2N5550 TO-92 TO-92 140 600 60 10 0.25 50 100 10 2N5551 2N5551 TO-92 TO-92 160 600 80 10 0.20 50 100 10 MPSA42 MPSA42 TO-92 TO-92 300 500 40 10 0.50 20 50 10 MPSA43 MPSA43 TO-92 TO-92 ..  Tags: MPSA25   datasheet abstract..	65.94 Kb	1 Pages	OCR Scan
	First line: 2N3114 BC520 SE4020* SE4020 FAIRCHILD TRANSISTORS SMALL SIGNAL LEVEL, NOISE AMPLIFIER TRANSISTORS ASCENDING VCEO) (Cont'd) DEVICE VCEO @'C Polarity Package Item Min/Max Min/Max PN4249 100/300 0.10 100/- TO-92 2N3965 180/- 0.001 250/500 0.01 TO-18 BFX37 70/300 0.01 100/- TO-18 Abstract: .. 30/150 30 40 12 800 5.0 TO-39 TO-39 20 BC532 BC532 140 60/250 10 100 6.0 814 1.79 TO-92 TO-92 21 2N5550 140 60/250 10 100 6.0 814 1.79 TO-92 TO-92 22 2N3114 2N3114 150 30/120 30 40 9.0 800 5.0 TO-39 TO-39 23 BC531 BC531 150 60/240 10 100 6.0 625 1.0 ..  Tags: SE4020 SE4020* BC520 2N3114   datasheet abstract..	64.1 Kb	1 Pages	OCR Scan
	First line: 2N5400 2N5401 2N5400 2N5401 Version 2006-06-17 Power dissipation Verlustleistung Abstract: .. 2N5550 / 2N5551 2N5551 2 Tested with pulses tp = 300 μs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 μs, Schaltverhältnis ≤ 2% 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from ..  Tags: 2N5401   2N5400 2N5401	102.95 Kb	2 Pages	Original
	First line: 2N5550 AMPLIFIER TRANSISTOR Collector-Emitter Voltage: VCEO= 140V Collector Dissipation: (max)=625mW Abstract: .. 2N5550 NPN EPITAXIAL SILICON TRANSISTOR. AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO= 140V 140V • Collector Dissipation: PC max =625mW 625mW . ABSOLUTE MAXIMUM RATINGS TA=25 � �C • Refer ..  Tags:   2N5550	27.13 Kb	2 Pages	Original
	First line: ^70570 DGDb^M2 HZETB TABLE NPN/PNP HIGH VOLTAGE TRANSISTORS transistors shown this table designed driving numerical indicator tubes, neon lamps other applications requiring high voltage capability. Type VcBO Vceo vCE(sat) P,o. 1"amb Complement ZTX658 1000 ZTX758 ZTX458 1000 ZTX558 ZTX6575 1000 Abstract: .. .1 125 1000 ZTX755 ZTX755 ZTX4555 ZTX4555 160 140 1000 0.7 150 15 100 300 150 0.1 140 1000 ZTX555 ZTX555 2N5550 160 140 600 0.25 50 5 60 250 10 0.1 100 350 2 N 5400 ZTX654 ZTX654 125 125 1000 0.5 1000 200 50 500 0.1 100 1000 ZTX754 ZTX754 ZTX454 ZTX454 ..  Tags:   datasheet abstract..	254.93 Kb	3 Pages	OCR Scan
	First line: PMBS3904, PMSS3904 PMBT5551, PMST5551 2n3906 sot23 PMBT2222 Date release: February 2005 Switching transistors portfolio Package Configuration Ptot max. 1250 1300 SOT223 (SC-73) SOT89 (SC-62) SOT23 Single SOT323 (SC-70) SOT54 (TO-92) SOT457 (SC-74) Double Abstract: .. 140 60 100 PMBT5550 PMBT5550 PMST5550 PMST5550 2N5550. 160 80 100 PMBT5551 PMBT5551 PMST5551 PMST5551 2N5551 2N5551 . 250 50 60 BF722 BF722 BF622 BF622 BF822 BF822 BF422 BF422 . 300 50 60 BF720 BF720 BF620 BF620 BF820 BF820 BF420 BF420 . 200 300 40 50 MMBTA42 MMBTA42 . 300. 300 40 50 PZTA42 PZTA42 PXTA42 PXTA42 PMBTA42 PMBTA42 PMSTA42 PMSTA42 ..  Tags: PMBT2222 2n3906 sot23 PMBT5551, PMST5551 PMBS3904, PMSS3904   datasheet abstract..	188.72 Kb	2 Pages	Original
	First line: AUER PHLPS/DSCRETE bbS3T31 DaSfilb7 2N5401 SLCON P-N-P HGH-VOLTAGE TRANSSTORS P-N-P high-voltage small-signal transistors general purposes especially telephony applications encapsulated TO-92 envelope. N-P-N complements 2N5550 2N5551. QUCK REFERENCE DATA 2N5400 2N5401 Abstract: .. N-P-N complements are 2N5550 and 2N5551 2N5551 . QUICK REFERENCE DATA 2N5400 2N5400 2N5401 2N5401 Collector-base voltage open emitter -VCBO max. 130 160 V Collector-emitter voltage open base -VCEO max. 120 ..  Tags:   datasheet abstract..	74.14 Kb	3 Pages	OCR Scan
	First line: BF845* 2N6520 MOTOROLA MPS2307 SMALL-SIGNAL TRANSISTORS PLASTIC (continued) High Voltage Amplifier Transistors (TO-92 EBC)* These high-voltage transistors designed driving neon bulbs Nixie@ indicator tubes, direct line operation, other applications requiring high-voltage capability relatively collec Abstract: .. 0.5 40 10 0.2 20 2 50 10 MPS-A43 MPS-A43 200 0.5 40 10 0.4 20 2 50 10 2N5551 2N5551 160 0.6 80 10 0.15 10 1 100 10 2N5550 140 0.6 60 10 0.15 10 1 100 10 M PS-L01 PS-L01 100 0.15 20 30 0.2 10 1 40 10 PNP BF493S BF493S 350 0.5 40 10 2.0 20 2 50 10 2N6520 2N6520 ..  Tags: MPS2307 2N6520 MOTOROLA BF845*   datasheet abstract..	70.35 Kb	1 Pages	OCR Scan
	First line: 5400/5401 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5550 2N5551 recommended. special request, these transistors manufactured different configurations. Please refer "TO-92 TRANSISTOR PACKAGE OUTLINE" page ava Abstract: .. As complementary types the NPN transistors 2N5550 and 2N5551 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations. Please refer to the ..  Tags:   datasheet abstract..	141.56 Kb	2 Pages	OCR Scan
	First line: 5551 transistor 2N 5551 HN/2N 5550/5551 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5400 2N5401 recommended. special request, these transistors manufactured different configurations. Please refer "TO-92 TRANSISTOR Abstract: .. mA HN / 2N 5550 HN / 2N 5551 at VCE = 5V, lc = 10 mA HN / 2N 5550 HN/2N 5551 at VCE = 5V, lc = 50 mA HN/2N5550 HN/2N 5551 hFE hFE hfe hpe hpe hpe 60 80 60 80 20 30 - 250 250 _ Collector Emitter Breakdown Voltage at I ..  Tags: transistor 2N 5551 5551 transistor 2N5401   datasheet abstract..	148.18 Kb	2 Pages	OCR Scan
	First line: MPSa06 equivalent dtc114* BC517 "cross reference" pmbt2369 2n5401 2n3904 Small-signal Transistors Diodes PHILIPS TRANSISTORS CROSS REFERENCE COMPETITOR TYPE NUMBER 2N2925 2N3903 2N3904 2N3904 2N3905 2N3906 2N3906 2N4123 2N4124 2N4125 2N4400 2N4401 2N4401 2N4402 2N4403 2N4403 2N4410 2N5087 2N5087 2N5 Abstract: .. 2N5550 2N5550 2N5551 2N5551 2N5551 2N5551 2N5551 2N5551 2N5551 2N5551 2N6426 2N6426 MPSA14 MPSA14 2N6426 2N6426 MPSA14 MPSA14 2N6427 2N6427 MPSA14 MPSA14 ..  Tags: 2n5401 2n3904 pmbt2369 BC517 "cross reference" dtc114* MPSa06 equivalent UMH3N  SSTA14  SSTA13  SSTA05*  SST6427*  SMBTA56  RXT2222A  PZT2222A  pxt2222a  PUMX1  PMBT4401   2SC1651S 2SC2062S 2SC2411K 2SC2412K 2SC2413K 2SC4081 2SC4097 2SC4098 2SC4102 2SC4132 2SC4505 2SC4617 2SC4618 2SC4672 2SC4997 2SC4998 2SC5053 2SA1036K 2SA1037AK 2SA1576A 2SA1579 2SA1759 2SA1774 2SA1797 2SA1900 2SB1132 2SB1189 2SB1260 2SB1424 2SB1561 2N2925	239.78 Kb	9 Pages	Original
	First line: 2N5769 T092 Plastic Package Transistors (NPN) Maxin atings Electrical Characteristics Unless Otherwise Specified) Type ^CBO ^CEO ^ebo 'cBO <MA) 'ces (CA) ^beisat) (rnA (PF) (MHz) (nsj Freq (dB) (MHz) CDIL Case Style 2N5172 0.25 TO-92-1 2N5209 0.625 0.0. 0.05 TO-92 2N5210 0.625 o.o: 0.05 TO-92 2N5 Abstract: .. 500 2 5 0.125 10 4 5 TO-92-1 TO-92-1 2N5449 2N5449 50 30 5 0.1 20 100 300 100 2 0.6 100 5 50 TO-92-4 TO-92-4 2N5550 160 140 6 0.5 0.6 0.1 100 20 60 60 250 50 10 1 5 5 5 0.15 0.25 1 10 1.2 50 6 100 300 10 10 TO-92 TO-92 2N5S51 2N5S51 180 160 6 0.5 0.6 0.05 120 ..  Tags: 2N5769   datasheet abstract..	104.87 Kb	1 Pages	OCR Scan
	First line: TO*92 Plastic Package Transistors (NPN) Maximum Ratings Electrical Characteristics Unless Otherwise Specified) Type ^CBO Vceo 'cBO 'ces ^ceisatl beisatl '(oil) Freq CDIL (MA) (ma) (mA) (mA) (pF) (MHz) (mA) (nsi (dB) (MHz) Case Style 2N5172 0.15 0.25 TO-92-1 2N5209 0.625 0.05 0.05 TO-92 Abstract: .. 500 2 5 0.125 10 4 5 TO-92-1 TO-92-1 2N5449 2N5449 50 30 5 0.1 20 100 300 100 2 0.6 100 5 50, TO-92-4 TO-92-4 2N5550 160 140 6 0.5 0.6 0.1 100 20 50 5 0.15 1 10 6 100 300 10 10 TO-92 TO-92 60 250 10 5 0.25 1.2 50 60 1 5 2NS551 2NS551 180 160 6 0.5 0.6 0.05 ..  Tags:   datasheet abstract..	119.64 Kb	1 Pages	OCR Scan
	First line: Econoline Plastic-Molded Silicon SEPTR Transistors HIGH-FREQUENCY AMPLIFIERS/OSCILLATORS Type (mW) v(br) Volts v(br) Volts v(br) Volts 'cbo Max. CURRENT GAIN (hFE) Min. (MHz) Max. (PF) toff Max. (nsec) N.F. Max. (dB) Conditions Limits (sat) (mA) Volts Min. Max. (mA) Max. Volts MPS-H32 .050 0.22 MPS- Abstract: .. 10 0.95 - 5 - - 2N5550 NPN 350 160 140 6 0.10 10 5 60 250 50 0.25 300 6 _ 10 2N5551 2N5551 NPN 350 180 160 6 0.05 10 5 80 250 50 0.20 300 6 - 8 âTM �Typical Value SMALL-SIGNAL VIDEO l-F TRANSISTORS 1 TO-92 TO-92 BEC Package ..  Tags:   datasheet abstract..	86.7 Kb	1 Pages	OCR Scan
	First line: MPSD02 MPSD52 High Voltage Transistors TYPE POLARITY CASE MAXIMUM RATINGS VCE(SAT) (MHz) (pF) (mW) 'cm (mAI VCEO VCER ImAI (mA) BFS89 TO-39 BFS90 TO-39 BFS91 TO-39 BFT47 TO-39 5000 BFT48 TO-39 5000 Abstract: .. TO-92A TO-92A 350 600 120 40 180 10 5 0.5 50 100 6 2N5401 2N5401 P TO-92A TO-92A 350 600 150 60 240 10 5 0.5 50 100 6 2N5550 N TO-92A TO-92A 350 600 140 60 250 10 5 0.25 50 100 6 2N5551 2N5551 N TO-92A TO-92A 350 600 160 80 250 10 5 0.2 50 100 6 2N6733 2N6733 P TO-237A TO-237A ..  Tags: MPSD52 MPSD02   datasheet abstract..	73.74 Kb	1 Pages	OCR Scan
	First line: High Voltage Transistors TYPE POLA- MAXIMUM RATINGS VCE(sat) RITY CASE VCEO ICM* VCER* (mW) (mA) (mA) (mA) (MHz) (MHz) BFR59 TO-39 4.2+* BFS89 TO-39 BFS90 TO-39 BFS91 TO-39 Abstract: .. TO-92A TO-92A 350 600 120 40 180 10 5 0.5 50 100 6 2N5401 2N5401 P TO-92A TO-92A 350 600 150 60 240 10 5 0.5 50 100 6 2N5550 N TO-92A TO-92A 350 600 140 60 250 10 5 0.25 50 100 6 2N5J51 2N5J51 N TO-92A TO-92A 350 600 160 80 250 10 5 0.2 50 100 6 2N6733 2N6733 P TO-237A TO-237A ..  Tags:   datasheet abstract..	121.26 Kb	1 Pages	OCR Scan
	First line: transistor 2N5401 2N5400 2N5401 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5550 2N5551 recommended. special request, these transistors manufactured different configurations. Absolute Maximum Ratings 25oC) Symbol Collec Abstract: .. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 TO-92 Plastic ..  Tags: transistor 2N5401  diode 2N5401  2N5401   2N5400 2N5401 2N5550 2N5551	240.31 Kb	3 Pages	Original
	First line: transistor 2N5401 2N5400 2N5401 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5550 2N5551 recommended. special request, these transistors manufactured different configurations. Absolute Maximum Ratings 25oC) Symbol Collec Abstract: .. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 TO-92 Plastic ..  Tags: transistor 2N5401  diode 2N5401  2N5401   2N5400 2N5401 2N5550 2N5551	272.72 Kb	3 Pages	Original
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